1. A method of eliminating beg bugs (Cimex lectularius) from an infected area, the method consisting of:
(a) formulating a composition consisting of mustard powder and water in a ratio of 1:40;
(b) applying said composition in an infected area where bed bugs are found, and thereby eliminating the bed bugs.
2. A method of eliminating beg bugs (Cimex lectularius) from an infected area, the method consisting of:
(a) formulating a composition consisting of mustard powder, cornstarch and water;
(b) applying said composition in an infected area where bed bugs are found, and thereby eliminating the bed bugs; wherein the ratio of mustard powder to water is 1:40, and wherein the cornstarch is added to the composition in an effective amount depending upon the desired consistency of the composition.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device, comprising:
a flexible substrate;
a crystalline semiconductor layer bonded to the flexible substrate, the crystalline semiconductor layer being cracked to form parallel structures along at least one direction; and
a two-dimensional material formed on the crystalline semiconductor layer being separated at cracks in the crystalline semiconductor layer to form nanostructures.
2. The device as recited in claim 1, wherein the cracks are spaced by an intercrack distance which is proportional to an applied strain during crack propagation.
3. The device as recited in claim 1, wherein the two-dimensional material includes graphene.
4. The device as recited in claim 1, wherein the crystalline semiconductor layer includes SiC.
5. The device as recited in claim 1, further comprising second cracks formed transversely to the cracks along the at least one direction.
6. The device as recited in claim 5, wherein the second cracks are formed through the crystalline semiconductor layer and through the two-dimensional material.
7. The device as recited in claim 6, wherein the second cracks in combination with first cracks provide dot structures including the two-dimensional material on the crystalline semiconductor layer.
8. The device as recited in claim 1, further comprising: an electronic or photonic device formed by incorporating the parallel structures.