1460960692-9552ec12-0f3d-4a60-935e-3cdea5fa9730

1. A mobile communication system, comprising:
a first assignment unit configured to assign radio resources to a user in a W-CDMA system;
a second assignment unit configured to assign radio resources to a user in a LTE system;
a dual mode terminal capable of communicating in the W-CDMA system and the LTE system; and
a selection unit configured to select the first assignment unit or the second assignment unit based on a data type of user traffic data in communication with the dual mode terminal and congestion degrees of the W-CDMA system and the LTE system, wherein:
i) in a case where the congestion degrees of the W-CDMA system and the LTE system differ from each other by less than a predefined value, if the user traffic data corresponds to periodically arising small-sized data, the selection unit causes the first assignment unit to assign a radio resource in the W-CDMA system for the user traffic data, and if the user traffic data does not correspond to periodically arising small-sized data, the selection unit causes the second assignment unit to assign a radio resource in the LTE system for the user traffic data, and
ii) in a case where the congestion degrees of the W-CDMA system and the LTE system differ from each other by greater than or equal to the predefined value, the selection unit selects a less congested one of the W-CDMA system and the LTE system, and

wherein the assignment unit selected by the selection unit assigns the radio resources for the dual mode terminal and signals the assigned radio resources to the dual mode terminal.
2. The mobile communication system as claimed in claim 1, wherein the first assignment unit is installed in a base station in the W-CDMA system.
3. The mobile communication system as claimed in claim 1, wherein the first assignment unit is installed in a radio network controller for controlling a base station in the W-CDMA system.
4. The mobile communication system as claimed in claim 1, wherein the second assignment unit is installed in a base station in the LTE system.
5. A controller for use in a composite communication system including a first assignment unit for assigning radio resources to a user in a W-CDMA system, a second assignment unit for assigning radio resources to a user in a LTE system and a dual mode terminal in communication with the W-CDMA system and the LTE system, comprising:
a selection unit configured to select the first assignment unit or the second assignment unit based on a data type of user traffic data in communication with the dual mode terminal and congestion degrees of the W-CDMA system and the LTE system, wherein:
i) in a case where the congestion degrees of the W-CDMA system and the LTE system differ from each other by less than a predefined value, if the user traffic data corresponds to periodically arising small-sized data, the selection unit causes the first assignment unit to assign a radio resource in the W-CDMA system for the user traffic data, and if the user traffic data does not correspond to periodically arising small-sized data, the selection unit causes the second assignment unit to assign a radio resource in the LTE system for the user traffic data, and
ii) in a case where the congestion degrees of the W-CDMA system and the LTE system differ from each than or equal to the predefined value, the selection unit selects a less congested one of the W-CDMA system and the LTE system; and

a signaling unit configured to signal the first or the second assignment unit that the selection has been made so that the selected assignment unit assigns the radio resources for the dual mode terminal and signals the assigned radio resources to the dual mode terminal.
6. The controller as claimed in claim 5, wherein the controller is installed in a base station in the LTE system.
7. A control method implemented by a controller in a composite communication system including a first assignment unit for assigning radio resources to a user in a W-CDMA system, a second assignment unit for assigning radio resources to a user in a LTE system, a dual mode terminal in communication with the W-CDMA system and the LTE system and a selection unit for selecting the first assignment unit or the second assignment unit, the method comprising:
selecting the first assignment unit or the second assignment unit based on a data type of user traffic data in communication with the dual mode terminal and congestion degrees of the W-CDMA system and the LTE system, wherein:
i) in a case where the congestion degrees of the W-CDMA system and the LTE system differ from each other by less than a predefined value, if the user traffic data corresponds to periodically arising small-sized data, the selecting comprises causing the first assignment unit to assign a radio resource in the W-CDMA system for the user traffic data, and if the user traffic data does not correspond to periodically arising small-sized data, the selecting comprises causing the second assignment unit to assign a radio resource in the LTE system for the user traffic data, and
ii) in a case where the congestion degrees of the W-CDMA system and the LTE system differ from each other by greater than or equal to the predefined value, the selection unit selects a less congested one of the W-CDMA system and the LTE system;

signaling the first or the second assignment unit that the selection has been made; and
the first assignment unit or the second assignment unit assigning the radio resources for the dual mode terminal and signaling the assigned radio resources to the dual mode terminal.
8. The method as claimed in claim 7, wherein the dual mode terminal determines a type of the user traffic data in communication with the dual mode terminal and signals the determined type to the selection unit in a predefined manner.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A plasma processing method for use in a processing chamber of a plasma processing apparatus having a mounting table and a shower head, there being formed a plasma processing space between the mounting table and the shower head, the method comprising the steps of:
mounting a target object on the mounting table, the target object including an opening pattern having openings, opening sizes of at least parts of the openings being equal to or greater than about 500 \u03bcm;
setting a gap between the shower head and the mounting table to be greater than about 25 mm and less than about 65 mm; and
performing a plasma processing on the target object by generating a plasma in the processing space,
wherein the plasma processing is a silicon etching processing, and
wherein the plasma processing is performed at an etching rate equal to or greater than about 5 \u03bcmmin such that the etching rate at a peripheral portion of the target object is substantially uniform with the etching rate at a central portion.
2. The plasma processing method of claim 1, wherein an opening ratio of the openings of the target object is equal to or greater than about 2%.
3. The plasma processing method of claim 1, wherein the gap is to be equal to or greater than about 40 mm and equal to or less than about 55 mm.
4. The plasma processing method of claim 3, wherein a high frequency power for generating the plasma is applied to the mounting table and the opening sizes are equal to or greater than about 1500 \u03bcm.
5. The plasma processing method of claim 3, wherein an opening ratio of the openings of the target object is equal to or greater than about 25%.
6. The plasma processing method of claim 1, wherein a mixture gas of SF6 and O2 is used as an etching gas.
7. The plasma processing method of claim 6, the plasma processing is performed under a pressure in the range from about 6.7 Pa to 133.3 Pa.
8. The plasma processing method of claim 1, wherein the plasma processing apparatus is of a parallel-plate type.
9. A plasma processing method for use in a processing chamber of a plasma processing apparatus having a mounting table and a shower head, there being formed a plasma processing space between the mounting table and the shower head, the method comprising the steps of:
mounting a target object on the mounting table, the target object including an opening pattern having openings, opening sizes of at least parts of the openings being equal to or greater than about 500 \u03bcm;
setting a gap between the shower head and the mounting table to be greater than about 25 mm and less than about 65 mm; and
performing a plasma processing on the target object by generating a plasma in the processing space,
wherein the plasma processing is performed at an etching rate equal to or greater than about 5 \u03bcmmin such that the etching rate at a peripheral portion of the target object is substantially uniform with the etching rate at a central portion.
10. The plasma processing method of claim 9, wherein an opening ratio of the openings of the target object is equal to or greater than about 2%.
11. The plasma processing method of claim 9, wherein the gap is to be equal to or greater than about 40 mm and equal to or less than about 55 mm.
12. The plasma processing method of claim 11, wherein a high frequency power for generating the plasma is applied to the mounting table and the opening sizes are equal to or greater than about 1500 \u03bcm.
13. The plasma processing method of claim 11, wherein an opening ratio of the openings of the target object is equal to or greater than about 25%.
14. The plasma processing method of claim 9, wherein a mixture gas of SF6 and O2 is used as an etching gas.
15. The plasma processing method of claim 14, the plasma processing is performed under a pressure in the range from about 6.7 Pa to 133.3 Pa.