1. An interconnected cell porous body, comprising a resin composition containing a polylactic acid resin as a principal component, wherein:
the micropore walls formed by mutual bonding of powdery fragments obtained by pulverization of a foam of the resin composition form an interconnected cell structure of the porous body;
the apparent density of the interconnected cell porous body is 0.01 gcm3 or more and 0.2 gcm3 or less;
the 10% compressive stress of the interconnected cell porous body is 0.02 MPa or more and 0.3 MPa or less; and
the compression recovery rate of the interconnected cell porous body is 95% or less.
2. The interconnected cell porous body according to claim 1, wherein the powdery fragments are bonded to each other by thermal bonding.
3. The interconnected cell porous body according to claim 1, wherein the powder has a bulk density of 0.001 gcm3 or more and 0.1 gcm3 or less.
4. The interconnected cell porous body according to claim 1, wherein the powder has an average diameter of 100 \u03bcm or more and 2,000 \u03bcm or less.
5. The interconnected cell porous body according to claim 1, wherein the foam of the resin composition is hydrolyzed.
6. The interconnected cell porous body according to claim 1, comprising a surfactant.
7. A method of producing an interconnected cell porous body comprising a resin composition containing a polylactic acid resin as a principal component, wherein
the porous body has an apparent density of 0.01 gcm3 or more and 0.2 gcm3 or less, a 10% compressive stress of 0.02 MPa or more and 0.3 MPa or less, and a compression recovery rate of 95% or less,
comprising steps (1) to (3):
(1) a foam-preparing step of preparing a foam by expanding a resin composition containing a polylactic acid resin as a principal component,
(2) a powder-preparing step of preparing a powder by pulverization of the foam, and
(3) a porous body-preparing step of preparing a porous body having an interconnected cell structure by molding the powder into a particular shape, bonding powdery fragments of the foam to each other and thus forming micropore walls.
8. The method of producing an interconnected cell porous body according to claim 7, wherein the powdery fragments are bonded to each other by thermal bonding.
9. The method of producing an interconnected cell porous body according to claim 7, wherein the thermal bonding is performed by heating.
10. The method of producing an interconnected cell porous body according to claim 7, wherein the heating is performed under an atmosphere containing steam at a temperature of 60 to 140\xb0 C. and a relative humidity of 20% or more.
11. The method of producing an interconnected cell porous body according to claim 7, wherein the heating is performed under an atmosphere at a relative humidity of 60 to 100%.
12. The method of producing an interconnected cell porous body according to claim 7, wherein the powder has a bulk density of 0.001 gcm3 or more and 0.1 gcm3 or less.
13. The method of producing an interconnected cell porous body according to claim 7, wherein the powder has an average diameter of 100 \u03bcm or more and 2,000 \u03bcm or less.
14. The method of producing an interconnected cell porous body according to claim 7, wherein the foam is hydrolyzed after the foam-preparing step and before the powder-preparing step.
15. The method of producing an interconnected cell porous body according to claim 7, wherein the interconnected cell porous body contains a surfactant that is added in the foam-preparing step or in the porous body-preparing step.
16. A water-absorbing material, comprising the interconnected cell porous body according to claim 1.
17. A water-absorbing material, comprising an interconnected cell porous body produced by the method according to claim 7.
18. The interconnected cell porous body according to claim 2, wherein the powder has a bulk density of 0.001 gcm3 or more and 0.1 gcm3 or less.
19. The interconnected cell porous body according to claim 2, wherein the powder has an average diameter of 100 \u03bcm or more and 2,000 \u03bcm or less.
20. The interconnected cell porous body according to claim 3, wherein the powder has an average diameter of 100 \u03bcm or more and 2,000 \u03bcm or less.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A random access memory (RAM) comprising:
a plurality of memory banks, each bank including a sub-array of selectable memory cells; at least one complementary global data line pair connected to said plurality of memory banks, each pair selectively developing a difference signal responsive to a selected cell in one of said plurality of memory banks; a global signal monitor line mirroring discharge of one line of a corresponding said global data line pair; and a global sense and control sensing said difference signal responsive to said discharge and restoring said corresponding global data line pair.
2. A RAM as in claim 1, wherein each of said memory banks includes at least one pair of global data drivers driving a corresponding said complementary global data line pair, and said RAM further comprises a discharge monitor driver driving said global signal monitor line.
3. A RAM as in claim 2, wherein each one of said discharge monitor driver and said pair of global data drivers comprises: a delay receiving a read select signal; a first device of a first conduction type gated by said read select signal and connected at a conduction terminal to an output; and a second device of a second conduction type receiving a delayed read select from said delay and connected at a conduction terminal to said output.
4. A RAM as in claim 3, wherein said output of each of said global data drivers is combined with said read select signal in said delay.
5. A RAM as in claim 3, wherein said RAM is a CMOS dynamic RAM (DRAM), said first device is a P-type Field Effect Transistor (PFET) and said second device is an N-type FET (NFET) and said delay comprises a NAND gate driving a plurality of series connected inverters.
6. A RAM as in claim 3, wherein said global sense and control comprises:
a global sense amplifier providing a read data output; a first pulse generator selectively coupling said difference signal from one said corresponding global data line pair to said global sense amplifier; and a second pulse generator selectively-setting said sense amp.
7. A RAM as in claim 6, wherein said first pulse generator initiates a read pulse responsive to a read select signal, said read pulse coupling said difference signal to said global sense amplifier, a set pulse from said second pulse generator terminating said read pulse and initiating resetting said corresponding global data line pair.
8. A RAM as in claim 6, wherein said RAM is a CMOS dynamic RAM (DRAM) and said global sense and control further comprises a pair of Field Effect Transistor (FET) pass gates selectively coupling said difference signal to said global sense amplifier responsive to said read pulse from said first pulse generator.
9. A CMOS DRAM as in claim 8, wherein said FET pass gates are NFETs and said global sense and control further comprises a pair of PFETs restoring said corresponding pair gated by said read pulse.
10. A CMOS integrated circuit (IC) chip including a dynamic random access memory (DRAM), said DRAM comprising: a plurality of memory banks, each bank including a sub-array of selectable DRAM cells; a plurality of global data line pairs connected to said plurality of memory banks, each of said plurality of memory banks selectively developing a difference signal on connected said global data line pairs responsive to selected cells; a plurality of global data sense amplifiers; a plurality of pairs of Field Effect Transistor (FET) pass gates, each pair of FET pass gates being connected source to drain between one global data line pair and a corresponding global data sense amplifier; at least one global signal monitor line mirroring discharge of one line of a coupled global data line pair; and at least one global sense control connected to a corresponding global monitor line and having a read select input, a read pulse output and a set pulse output, the gates of each pair of FET pass gates being connected to a corresponding said read pulse output, a set input on each data sense amplifier being connected to a corresponding set pulse output, said global sense control providing a read pulse responsive to a read select input signal and a set pulse responsive to monitored said discharge.
11. A CMOS IC chip as in claim 10, wherein each of said memory banks includes a corresponding pair of global data drivers connected to each of said connected global data line pairs.
12. A CMOS IC chip as in claim 11, further comprising a discharge monitor driver driving each said at least one global signal monitor line.
13. A CMOS IC chip as in claim 12, wherein each one of said discharge monitor driver and said pair of global data drivers comprises: a delay receiving a read select signal; a P-type FET (PFET) gated by a read select and the drain of said PFET connected to an output; and an N-type FET (NFET), the drain of said NFET connected to said output and a delayed read select from said delay gating said NFET.
14. A CMOS IC chip as in claim 13, wherein said output of each of said global data drivers is combined with said read select signal in said delay.
15. A CMOS IC chip as in claim 12, wherein, said pairs of FET pass gates are N-type FET (NFET) pass gates, each of said global data line pairs includes a pair of P-type FET (PFET) restore devices, the gates of each pair of PFET restore devices being connected to the gates of a corresponding pair of NFET pass gates and said global sense control comprises: a first pulse generator connected to the gates of one said pair of PFET restore devices and selectively providing said read pulse; and a second pulse generator selective providing said set pulse.
16. A CMOS IC chip as in claim 15, wherein said first pulse generator initiates said read pulse responsive to said read select signal, said set pulse terminating said read pulse.
17. A CMOS IC chip as in claim 16, wherein said CMOS IC is a logic chip and said DRAM is an embedded DRAM in said logic chip, data outputs from said plurality of global sense amplifiers being provided to chip logic.
18. A CMOS integrated circuit (IC) logic chip including an embedded dynamic random access memory (eDRAM), said eDRAM comprising: a plurality of memory banks, each bank including a sub-array of selectable DRAM cells and at least one local sense amplifier sensing selected cell contents and driving a pair of global data drivers; a plurality of global data line pairs, each connected to a respective said pair of global data drivers in each connected one of said plurality of memory banks, each of said connected pair of global data drivers selectively developing a difference signal on a connected said global data line pair; a plurality of pairs of N-type Field Effect Transistor (NFET) pass gates, each pair of NFET pass gates being connected at a sourcedrain terminal to one line of a global data line pair; a plurality of P-type FET (PFET) restore devices, the drain of each of said PFET restore devices being connected to one line of one said global data line pair; a plurality of global data sense amplifiers providing a data output, each connected to a corresponding one of said plurality of pairs of NFET pass gates; at least one global signal monitor line; a discharge monitor driver driving each said global signal monitor line, each driven said global signal monitor line mirroring discharge of one line of a coupled global data line pair; and at least one global sense control connected to a corresponding global monitor line and having a read select input, a read pulse output and a set pulse output, the gates of each pair of NFET pass gates and of a pair of PFET restore devices being connected to a corresponding said read pulse output, a set input on each data sense amplifier being connected to a corresponding set pulse output, said global sense control providing a read pulse responsive to a read select input signal and a set pulse responsive to monitored said discharge.
19. A CMOS IC logic chip as in claim 18, wherein each one of said discharge monitor driver and said global data drivers comprises: a delay receiving a read select signal; a P-type FET (PFET) gated by a read select and the drain of said PFET connected to an output; and an N-type FET (NFET), the drain of said NFET connected to said output and a delayed read select from said delay gating said NFET, said output of each of said global data drivers being combined with said read select signal in said delay.
20. A CMOS IC logic chip as in claim 12, wherein, said global sense control comprises: a first pulse generator selectively providing said read pulse responsive to said read select signal, said read pulse turning off a connected said each pair of PFET restore devices; and a second pulse generator selective providing said set pulse, said set pulse terminating said read pulse, said connected pair of PFET restore devices turning on upon termination of said read pulse.