What is claimed is:
1. A photographic film comprising a base layer and at least one emulsion layer, the emulsion layer having a melting temperature that is within 4 degrees centigrade of the incubation temperature used in an accelerated core-set test.
2. A photographic film comprising a base layer and at least one emulsion layer, the emulsion layer containing a humectant at a concentration sufficient to suppress the melting temperature as measured by differential scanning calorimetry, at a temperature that is within 4 degrees centigrade of the incubation temperature used in an accelerated core-set test.
3. The photographic film of claim 2 wherein the humectant is glycerol, ethylene diurea, a polysaccharide or a monosaccharide.
4. The photographic film of claim 1 or 2 further comprising at least one backing layer.
5. The photographic film of claim 1 or 2 wherein the base layer comprises a polyester film.
6. The photographic film of claim 5 wherein the polyester is selected from poly(ethylene terephthalate) and poly(ethylene naphthalate).
7. The photographic film of claim 1 or 2 having a base layer that is annealed at temperatures from Tg of the material in the base layer to that Tg-50 C. for a period of 0.01 to 1000.00 hours.
8. The photographic film of claim 1 or 2 wherein the melting temperature of the emulsion layer is within 3 C. of the incubation temperature used in the core-set test.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A nonvolatile semiconductor memory device comprising:
a floating gate electrode that is formed on a semiconductor substrate with a first insulating film interposed between them and that is in an electrically floating state; and
a control gate electrode that is formed on the floating gate electrode with a second insulating film interposed between them, and that supplies a predetermined electric potential to the semiconductor substrate and the floating gate electrode;
wherein the first insulating film has a substantially uniform thickness at a portion where it is in opposition to the floating gate electrode.
2. The nonvolatile semiconductor memory device according to claim 1, wherein the control gate electrode is formed from a top surface of the floating gate electrode, along a side surface thereof, and to the semiconductor substrate next to that side surface, and
wherein the control gate electrode is formed with the second insulating film interposed between it and the side surface and with a third insulating film interposed between it and the top of the semiconductor substrate.
3. The nonvolatile semiconductor memory device according to claim 2, wherein the first insulating film and the third insulating film are formed through identical processes.
4. The nonvolatile semiconductor memory device according to claim 2, wherein the second insulating film and the third insulating film are formed through identical processes.
5. A method of manufacturing a nonvolatile semiconductor memory device, comprising:
a first step of forming a floating gate electrode from a first conducting film by patterning the first conducting film after a first insulating film and the first conducting film have been formed on a semiconductor substrate;
a second step of forming a second insulating film on an upper portion and a side portion of the floating gate electrode by introducing hydrogen and oxygen above the heated semiconductor substrate and generating water vapor on the semiconductor substrate from the introduced hydrogen and oxygen; and
a third step of forming a control gate electrode made of a second conducting film on the floating gate electrode with the second insulating film interposed between them.
6. The method of manufacturing a nonvolatile semiconductor memory device according to claim 5, wherein
the first step includes a step of removing the first insulating film with the floating gate electrode serving as a mask, and
wherein in the second step, the second insulating film is also formed on an upper portion of the semiconductor substrate.
7. The method of manufacturing a nonvolatile semiconductor memory device according to claim 5, wherein
the third step includes:
a step of depositing the second conducting film over the entire surface of the semiconductor substrate, including the floating gate electrode; and
a step of patterning the deposited second conducting film such that the control gate electrode is positioned only above the floating gate electrode.
8. The method of manufacturing a nonvolatile semiconductor memory device according to claim 5, wherein
the third step includes:
a step of depositing the second conducting film over the entire surface of the semiconductor substrate, including the floating gate electrode; and
a step of patterning the deposited second conducting film such that the control gate electrode covers a top surface and a side surface of the floating gate electrode.