1. A method for selectively nitriding an object, the method comprising:
(I) mounting an object to be processed on a mounting table in a processing chamber of a plasma processing apparatus, the object comprising a silicon surface and a silicon compound layer exposed;
(II) setting a pressure in the processing chamber within a range of about 66.7 Pa to 667 Pa;
(III) generating a nitrogen-comprising plasma while applying a bias voltage to the object by supplying a high frequency power with an output of about 0.1 Wcm2 to 1.2 Wcm2 per unit area of the object to the mounting table; and
(IV) selectively nitriding the silicon surface with the nitrogen-comprising plasma, to form a silicon nitride film.
2. The method of claim 1, wherein the silicon compound layer is a silicon oxide film.
3. The method of claim 2, wherein a nitriding selectivity of the silicon to the silicon oxide film, (SiSiO2), is greater than or equal to 2.
4. The method of claim 1, wherein the pressure in the processing chamber is set within a range of about 133 Pa to 400 Pa.
5. The method of claim 1, wherein a frequency of the high frequency power is in a range of about 400 kHz to 60 MHz.
6. The method of claim 1, wherein a processing time is in a range of about 10 seconds to 180 seconds.
7. The method of claim 1, wherein a processing time is in a range of about 10 seconds to 90 seconds.
8. The method of claim 1, wherein the nitrogen-comprising plasma is a microwave excitation plasma generated by a processing gas and a microwave introduced into the processing chamber by a planar antenna comprising a plurality of slots.
9. The method of claim 8, wherein a power density of the microwave per unit area of the object is in a range of about 0.255 Wcm2 to 2.55 Wcm2.
10. The method of claim 1, wherein a process temperature is in a range of about 25\xb0 C. to 600\xb0 C.
11. A plasma nitriding apparatus, comprising:
a processing chamber, which processes an object comprising a silicon surface and a silicon compound layer exposed with a plasma;
a gas exhaust unit, which depressurizes and exhausts an interior of the processing chamber;
a plasma generation unit, which generates a plasma in the processing chamber;
a mounting table, to which the object in the processing chamber is mounted;
a high frequency power supply connected to the mounting table; and
a control unit, which is programmed to control a selective plasma processing method to be performed,
wherein the selective plasma processing method comprises:
(I) setting a pressure in the processing chamber within a range of about 66.7 Pa to 667 Pa;
(II) generating a nitrogen-comprising plasma while applying a bias voltage to the object to be processed by supplying a high frequency power with an output of about 0.1 Wcm2 to 1.2 Wcm2 per unit area of the object to the mounting table; and
(III) selectively nitriding the silicon surface by the nitrogen-comprising plasma, to form a silicon nitride film.
12. The method of claim 2, wherein a nitriding selectivity of the silicon to the silicon oxide film, (SiSiO2), is greater than or equal to 4.
13. The method of claim 1, the high frequency power output is in a range from about 0.4 Wcm2 to 1.2 Wcm2 per unit area of the object.
14. The method of claim 1, wherein a frequency of the high frequency power is in a range of about 400 kHz to 13.5 MHz.
15. The method of claim 1, wherein a process temperature is in a range of about 200\xb0 C. to 500\xb0 C.
16. The method of claim 1, wherein a process temperature is in a range of about 400\xb0 C. to 500\xb0 C.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of constructing a micro-electro-mechanical device, comprising:
forming a substrate having a plurality of electrical connections including a source connection, a gate connection and a drain connection;
affixing an anchor to the substrate at a first point and a second point;
electrically connecting the anchor to the source;
forming a gap located between the first point and the second point;
coupling a beam to an anchor, and the beam configured to move when a voltage is applied to the gate connection; and
connecting a contact tip to the beam, opposite the hinge, that electrically contacts the drain connection thereby forming a current path formed from the source connection to the drain connection, when the beam moves in response to the voltage applied to the gate connection.
2. The method of claim 1, comprising:
connecting a movable hinge to the anchor at a point diagonally opposite the gap in the anchor; and
connecting the beam to the movable hinge.
3. The method of claim 2, comprising:
forming a slot vertically in the anchor to the substrate in a location behind the movable hinge.
4. The method of claim 1, comprising:
forming a pillar in the gap.
5. The method of claim 1, wherein the beam has a width wider than the width of the hinge.
6. The method of claim 1, wherein the beam has a width equal to the width of the hinge.