1. An electric charger (1) comprising:
an electrical energy storage module (3) having a connection interface (31) to an external battery (41, 42),
an electrical generator (2) supplied with energy in a controllable manner in order to supply electrical energy to the storage module (3), at an operating point,
control means (5) of the generator (2) designed to adapt the operating point of said generator (2) when it supplies electrical energy to the storage module (3), according to information (530) relating to the state of the storage module (3) and information (520) relating to the state of the generator.
2. The charger (1) as claimed in claim 1, wherein the electrical generator is an electrochemical generator.
3. The charger (1) as claimed in claim 2, wherein the control means (5) of the generator (2) are designed to control a chemical reaction in the generator (2) according to information (530) relating to the state of the storage module.
4. The charger (1) as claimed in claim 2 or claim 3, wherein the electrochemical generator (2) comprises a fuel cell.
5. The charger (1) as claimed in any one of the preceding claims, wherein the connection interface of the storage module comprises a matching circuit (31) to adapt output parameters of the storage module (3) to charging parameters of the battery (41, 42).
6. The charger (1) as claimed in one of the preceding claims, wherein the information (530) relating to the state of the storage module (3) comprises its charge, its temperature, its pressure, its voltage or its intensity, at the input or output.
7. The charger as claimed in one of the preceding claims, wherein the storage module (3) comprises a plurality of storage elements (30, 301, 302, 303) and switching means (311, 312, 313, 314, 315) to connect the storage elements (30, 301, 302, 303) in parallel during charging and in series during discharging.
8. The charger (1) as claimed in one of the preceding claims, furthermore comprising means to charge the storage module (3) from an external energy source.
9. The charger (1) as claimed in claim 8, wherein the external source comprises a mains connection cable or a USB cable.
10. The charger (1) as claimed in any one of the preceding claims, wherein at least one from the electrical generator (2), the storage module (3) and the external battery (41, 42) comprises an identification device adapted to supply data to the control circuit (5), said control circuit (5) being configured to adapt its control on the basis of said data.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device production system comprising:
first means for forming an insulating film that has rectangular or stripe pattern depression portion and projection portion on a substrate;
second means for forming a semiconductor film on the insulating film;
third means for storing a pattern information of the insulating film;
a laser oscillator;
an optical system for collecting laser light that is emitted from the laser oscillator into a linear laser beam;
fourth means for moving a irradiation position of the linear laser beam;
fifth means for determining a scanning path of the linear laser beam and for controlling the fourth means, the scanning path being determined so as to include the depression portion of the semiconductor film from the pattern information of the insulating film referring to a marker that is formed on the substrate, and the fourth means being controlled to move the linear laser beam along the scanning path, thereby improving the crystallinity of the semiconductor film; and
sixth means for patterning the semiconductor film with improved crystallinity to form an island between the center and edge of the depression portion.
2. The semiconductor device production system according to claim 1, wherein laser light scanning is conducted under a reduced pressure atmosphere or inert gas atmosphere.
3. The semiconductor device production system according to claim 1, wherein the laser light is outputted from one or more kinds of lasers selected from the group consisting of a YAG laser, a YVO4 laser, a YLF laser, a YAlO3 laser, a glass laser, a ruby laser, an alexandrite laser, a Ti:sapphire laser, and a Nd:YVO4 laser.
4. The semiconductor device production system according to claim 1, wherein the laser light is outputted from a slab laser.
5. The semiconductor device production system according to claim 1, wherein the laser light is continuous wave laser light.
6. The semiconductor device production system according to claim 1, wherein the laser light is second harmonic.
7. A semiconductor device production system comprising:
first means for storing a pattern information of an insulating film;
second means for forming the insulating film that has rectangular or stripe pattern depression portion and projection portion on a substrate in accordance with the pattern information of the insulating film;
third means for forming a semiconductor film on the insulating film;
fourth means for reading a position information of the semiconductor film;
fifth means for storing the position information of the semiconductor film read;
a laser oscillator;
an optical system for collecting laser light that is emitted from the laser oscillator into a linear laser beam;
sixth means for moving a irradiation position of the linear laser beam;
seventh means for determining a scanning path of the linear laser beam and for controlling the sixth means, the scanning path being determined so as to include the depression portion based on the pattern information of the insulating film stored in the first means, the position information of the semiconductor film stored in the fifth means, and the thickness of the semiconductor film, and the sixth means being controlled to move the linear laser beam along the scanning path, thereby improving the crystallinity of the semiconductor film; and
eighth means for patterning the semiconductor film with improved crystallinity to form an island between the center and edge of the depression portion.
8. The semiconductor device production system according to claim 7, wherein the fourth means uses a charge-coupled device.
9. The semiconductor device production system according to claim 7, wherein laser light scanning is conducted under a reduced pressure atmosphere or inert gas atmosphere.
10. The semiconductor device production system according to claim 7, wherein the laser light is outputted from one or more kinds of lasers selected from the group consisting of a YAG laser, a YVO4laser, a YLF laser, a YAlO3 laser, a glass laser, a ruby laser, an alexandrite laser, a Ti:sapphire laser, and a Nd:YVO4 laser.
11. The semiconductor device production system according to claim 7, wherein the laser light is outputted from a slab laser.
12. The semiconductor device production system according to claim 7, wherein the laser light is continuous wave laser light.
13. The semiconductor device production system according to claim 7, wherein the laser light is second harmonic.
14. A semiconductor device production system comprising:
first means for forming an insulating film that has rectangular or stripe pattern depression portion and projection portion on a substrate;
second means for forming a semiconductor film on the insulating film;
third means for storing a pattern information of the insulating film;
a laser oscillator;
an optical system for collecting laser light that is emitted from the laser oscillator into a linear laser beam;
fourth means for moving a irradiation position of the linear laser beam;
fifth means for determining a scanning path of the linear laser beam and for controlling the fourth means, the scanning path being determined so as to include the projection portion of the semiconductor film from the pattern information of the insulating film referring to a marker that is formed on the substrate, and the fourth means being controlled to move the linear laser beam along the scanning path, thereby improving the crystallinity of the semiconductor film; and
sixth means for patterning the semiconductor film with improved crystallinity to form an island between the center and edge of the projection portion.
15. The semiconductor device according to claim 14, wherein laser light scanning is conducted under a reduced pressure atmosphere or inert gas atmosphere.
16. The semiconductor device production system according to claim 14, wherein the laser light is outputted from one or more kinds of lasers selected from the group consisting of a YAG laser, a YVO4 laser, and YLF laser, a YAlO3 laser, a glass laser, a ruby laser, an alexandrite laser, a Ti:sapphire laser, and a Nd:YVO4 laser.
17. The semiconductor device production system according to claim 14, wherein the laser light is outputted from a slab laser.
18. The semiconductor device production system according to claim 14, wherein the laser light is continuous wave laser light.
19. The semiconductor device production system according to claim 14, wherein the laser light is second harmonic.
20. A semiconductor device production system comprising:
first means for storing a pattern information of an insulating film;
second means for forming the insulating film that has rectangular or stripe pattern depression portion and projection portion on a substrate in accordance with the pattern information of the insulating film;
third means for forming a semiconductor film on the insulating film;
fourth means for reading a position information of the semiconductor film;
fifth means for storing the position information of the semiconductor film read;
a laser oscillator;
an optical system for collecting laser light that is emitted from the laser oscillator into a linear laser beam;
sixth means form moving a irradiation position of the linear laser beam;
seventh means for determining a scanning path of the linear laser beam and for controlling the sixth means, the scanning path being determined so as to include the projection portion based on the pattern information of the insulating film stored in the first means, the position information of the semiconductor film stored in the fifth means, and the thickness of the semiconductor film, and the sixth means being controlled to move the linear laser beam along the scanning path, thereby improving the crystallinity of the semiconductor film; and
eighth means for patterning the semiconductor film with improved crystallinity to form an island between the center and edge of the projection portion.
21. The semiconductor device production system according to claim 20, wherein the fourth means uses a charge-coupled device.
22. The semiconductor device production system according to claim 20, wherein laser light scanning is conducted under a reduced pressure atmosphere or inert gas atmosphere.
23. The semiconductor device production system according to claim 20, wherein the laser light is outputted from one or more kinds of lasers selected from the group consisting of a YAG laser, a YVO4 laser, and YLF laser, a YAlO3 laser, a glass laser, a ruby laser, an alexandrite laser, a Ti:sapphire laser, and a Nd:YVO4 laser.
24. The semiconductor device production system according to claim 20, wherein the laser light is outputted from a slab laser.
25. The semiconductor device production system according to claim 20, wherein the laser light is continuous wave laser light.
26. The semiconductor device production system according to claim 20, wherein the laser light is second harmonic.