1. An article of footwear comprising:
an outsole including a plurality of first traction members extending from said outsole, said outsole defining a plurality of openings;
a plurality of second traction members extending through said openings in said outsole, said second traction members configured to move between an extended position, wherein said second traction members are fully extended in said openings, and a retracted position, wherein said second traction members are at least partially retracted within said openings; and
a compressible member positioned adjacent to said plurality of second traction members and configured to compress when said second traction members move to said retracted position.
2. The article of footwear of claim 1, further comprising an adjustment member including said plurality of second traction members, said plurality of second traction members extending from said adjustment member.
3. The article of footwear of claim 2, wherein said plurality of second traction members are integrally formed with said adjustment member.
4. The article of footwear of claim 2, wherein an upper surface of said outsole defines a recess for receiving said adjustment member so that an upper surface of said adjustment member and said upper surface of said outsole are substantially flush when said adjustment member is inserted in said recess.
5. The article of footwear of claim 1, wherein said plurality of first traction members and said plurality of said second traction members are adjacent to each other.
6. The article of footwear of claim 1, wherein said plurality of first traction members are positioned on an outer portion of said outsole and said openings are located at an inner portion of said outsole so that said plurality of second traction members are at least partially surrounded by said plurality of first traction members when said plurality of second traction members extend through said openings.
7. The article of footwear of claim 1, wherein said plurality of first traction members are integrally formed with said outsole.
8. The article of footwear of claim 1, wherein said outsole is made of an abrasion resistant material.
9. The article of footwear of claim 1, wherein said compressible member is made of a material having a first hardness value and said outsole is made of a material having a second hardness value, wherein said second hardness value is greater than said first hardness value.
10. The article of footwear of claim 1, wherein at least one of said compressible member and said outsole is made of a foam material.
11. A article of footwear comprising:
an outsole including traction means located on a perimeter of said outsole for providing traction on an underlying surface, and a plurality of openings on a central portion of said outsole;
a plurality of adjustable lugs extending through and movable within said openings; and
adjustment means operatively connected to said adjustable lugs for extending or retracting said lugs based on the hardness of the underlying surface.
12. The article of footwear of claim 11, wherein said adjustment means is made of a material having a first hardness value and said outsole is made of a material having a second hardness value, wherein said second hardness value is greater than said first hardness value.
13. The article of footwear of claim 11, wherein at least one of said adjustment means and said outsole is made of a foam material.
14. The article of footwear of claim 11, wherein said outsole is made of an abrasion resistant material.
15. An article of footwear comprising:
an outsole including a plurality of fixed lugs integrally formed on at least a portion of a perimeter of a first side of said outsole, said outsole defining a plurality of openings located at least partially within said plurality of lugs;
a plurality of adjustable lugs extending through said openings, said adjustable lugs being movable between an extended position and a retracted position; and
a compressible member positioned adjacent to said plurality of adjustable lugs on a second, opposing side of said outsole,
said plurality of adjustable lugs being in said extended position when said compressible member is not compressed, and said adjustable lugs being in a retracted position when said compressible member is compressed.
16. The article of footwear of claim 15, wherein said outsole is made of an abrasion resistant material.
17. The article of footwear of claim 15, wherein said compressible member is made of a material having a first hardness value and said outsole is made of a material having a second hardness value, wherein said second hardness value is greater than said first hardness value.
18. The article of footwear of claim 15, wherein at least one of said compressible member and said outsole is made of a foam material.
19. The article of footwear of claim 15, wherein said fixed lugs and said adjustable lugs are made of different materials.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for forming etch features in an etch layer over a substrate and below an organic ARC layer, which is below an immersion lithography photoresist mask, comprising:
placing the substrate with the etch layer, organic ARC layer, and immersion lithography photoresist mask into a processing chamber; and
opening the organic ARC layer, comprising:
flowing an organic ARC open gas mixture into the processing chamber, wherein the organic ARC open gas mixture comprises:
an etchant gas; and
a polymerization gas comprising CO;
forming an organic ARC open plasma from the organic ARC open gas mixture;
etching the organic ARC layer with the organic ARC open plasma until the organic ARC layer is opened; and
stopping the flow of organic ARC open gas mixture into the processing chamber before the etch layer is completely etched.
2. The method, as recited in claim 1, wherein the polymerization gas further comprises CH3F.
3. The method, as recited in claim 2, the etchant gas comprises N2 and H2.
4. The method, as recited in claim 3, further comprising etching the etch layer after stopping the flow of the organic ARC open gas mixture.
5. The method, as recited in claim 4, wherein the etching the etch layer uses the immersion lithography photoresist as an etch mask for etching the etch layer.
6. The method, as recited in claim 5, wherein the organic ARC is BARC.
7. The method, as recited in claim 6, wherein the photoresist mask is of a 193 or higher generation immersion lithography photoresist.
8. The method, as recited in claim 7, wherein the organic ARC opening has a selectivity of 5:1 with respect to the immersion lithography photoresist.
9. The method, as recited in claim 4, further comprising removing the substrate from the processing chamber after the etching the etch layer, so that the opening the organic ARC layer and etching the etch layer are done in situ.
10. The method, as recited in claim 1, the etchant gas comprises N2 and H2.
11. The method, as recited in claim 1, further comprising etching the etch layer after stopping the flow of the organic ARC open gas mixture.
12. The method, as recited in claim 11, wherein the etching the etch layer uses the immersion lithography photoresist as an etch mask for etching the etch layer.
13. The method, as recited in claim 11, further comprising removing the substrate from the processing chamber after the etching the etch layer, so that the opening the organic ARC layer and etching the etch layer are done in situ.
14. The method, as recited in claim 1, wherein the organic ARC is BARC.
15. The method, as recited in claim 1, wherein the photoresist mask is of a 193 or higher generation immersion lithography photoresist.
16. The method, as recited in claim 1, wherein the organic ARC opening has a selectivity of 5:1 with respect to the immersion lithography photoresist.
17. A method for forming etch features in an etch layer over a substrate and below an organic ARC layer, which is below an immersion lithography photoresist mask, comprising:
placing the substrate with the etch layer, organic ARC layer, and immersion lithography photoresist mask into a processing chamber;
opening the organic ARC layer, comprising:
flowing an organic ARC open gas mixture into the processing chamber, wherein the organic ARC open gas mixture comprises:
an etchant gas comprising N2 and H2; and
a polymerization gas comprising CO and CH3F;
forming an organic ARC open plasma from the organic ARC open gas mixture;
etching the organic ARC layer with the organic ARC open plasma until the organic ARC layer is opened; and
stopping the flow of organic ARC open gas mixture into the processing chamber before the etch layer is completely etched;
etching the etch layer after stopping the flow of the organic ARC open gas mixture, using the immersion lithography photoresist as an etch mask; and
removing the substrate from the processing chamber, so that the opening the organic ARC layer and etching the etch layer are done in situ.
18. An apparatus for etching features in an etch layer, wherein the etch layer is supported by a substrate and wherein the etch layer is covered by an organic ARC layer, which is below an immersion lithography photoresist mask with mask features, comprising:
a plasma processing chamber, comprising:
a chamber wall forming a plasma processing chamber enclosure;
a substrate support for supporting a wafer within the plasma processing chamber enclosure;
a pressure regulator for regulating the pressure in the plasma processing chamber enclosure;
at least one electrode for providing power to the plasma processing chamber enclosure for sustaining a plasma;
a gas inlet for providing gas into the plasma processing chamber enclosure; and
a gas outlet for exhausting gas from the plasma processing chamber enclosure;
a gas source in fluid connection with the gas inlet, comprising;
an etchant gas source; and
a CO polymerization gas source;
a controller controllably connected to the gas source and the at least one electrode, comprising:
at least one processor; and
computer readable media, comprising:
computer readable code for opening the organic ARC layer, comprising:
computer readable code for flowing an organic ARC open gas mixture into the processing chamber, wherein the organic ARC open gas mixture comprises an etchant gas flowed from the etchant gas source and a polymerization gas comprising CO flowed from the CO polymerization gas source;
computer readable code for forming an organic ARC open plasma from the organic ARC open gas mixture;
computer readable code for etching the organic ARC layer with the organic ARC open plasma until the organic ARC layer is opened; and
computer readable code for stopping the flow of organic ARC open gas mixture into the processing chamber before the etch layer is completely etched; and
computer readable code for etching the etch layer.