1460963535-e0e76e26-707f-4d8c-a2ca-34e0ee230748

1. A magneto-resistive effect element, comprising:
a first ferromagnetic film;
a second ferromagnetic film; and
a nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film,
wherein:
the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field, and
the first ferromagnetic film includes:
an amorphous magnetic film, and
a third ferromagnetic film in contact with the nonmagnetic film and interposed between the amorphous magnetic film and the nonmagnetic film.
2. A magneto-resistive effect element according to claim 1, wherein at least one of the first ferromagnetic film and the second ferromagnetic film has a magnetization direction in a planar direction thereof.
3. A magneto-resistive effect element according to claim 1, wherein the nonmagnetic film is an insulating film.
4. A magneto-resistive effect element, comprising:
a first ferromagnetic film;
a second ferromagnetic film; and
a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film,
wherein:
the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field, and
the first ferromagnetic film includes:
a second nonmagnetic film,
a third ferromagnetic film, and
a fourth ferromagnetic film,
wherein the third ferromagnetic film and the fourth ferromagnetic film are antiferromagnetically exchange-coupled with each other through the second nonmagnetic film.
5. A magneto-resistive effect element according to claim 4, wherein at least one of the first ferromagnetic film and the second ferromagnetic film has a magnetization direction in a planar direction thereof.
6. A magneto-resistive effect element according to claim 4, wherein the third ferromagnetic film and the fourth ferromagnetic film have different strengths of saturated magnetization from each other.
7. A magneto-resistive effect element according to claim 4, wherein the third ferromagnetic film and the fourth ferromagnetic film have different thicknesses from each other.
8. A magneto-resistive effect element according to claim 4, wherein the third ferromagnetic film and the fourth ferromagnetic film are magnetization-rotated while being kept anti-parallel to each other.
9. A magneto-resistive effect element according to claim 4, wherein the second ferromagnetic film includes:
a third nonmagnetic film,
a filth ferromagnetic film, and
a sixth ferromagnetic film,
wherein the fifth ferromagnetic film and the sixth ferromagnetic film are antiferromagnetically exchange-coupled with each other through the third nonmagnetic film.
10. A magneto-resistive effect element according to claim 4, wherein the first nonmagnetic film is an insulating film.
11. A magneto-resistive effect memory cell, comprising:
a first ferromagnetic film;
a second ferromagnetic film;
a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film; and
at least one conductive film for causing a magnetization rotation of at least the first ferromagnetic film,
wherein:
the first ferromagnetic film has a magnetization more easily rotatable the a magnetization of the second ferromagnetic film by an external magnetic field, and
the first ferromagnetic film includes:
an amorphous magnetic film, and
a third nonmagnetic film in contact with the first nonmagnetic film and interposed between the amorphous film and the first nonmagnetic film.
12. A magneto-resistive effect memory cell according to claim 11, wherein at least one of the first ferromagnetic film and the second ferromagnetic film has a magnetization direction in a planar direction thereof.
13. A magneto-resistive effect memory cell according to claim 11, wherein the first nonmagnetic film is an insulating film.
14. A magneto-resistive effect memory cell according to claim 11, wherein:
at least two layer structures are provided, each layer structure including the first ferromagnetic film, the second ferromagnetic film, and the first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film, and
the at least two layer structures are stacked with at least one second nonmagnetic film interposed therebetween.
15. A magneto-resistive effect memory cell according to claim 14, wherein the second ferromagnetic films of the at least two layer structures have different magnetic coercive forces from each other.
16. An MRAM, comprising a plurality of magneto-resistive effect memory cells according to claim 11, wherein the plurality of conductive films are arranged in at least one prescribed direction.
17. A magneto-resistive effect memory cell, comprising:
a first ferromagnetic film;
a second ferromagnetic film;
a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film; and
at least one conductive film for causing a magnetization rotation of at least the first ferromagnetic film,
wherein
the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field, and
the first ferromagnetic film includes:
a second nonmagnetic film,
a third ferromagnetic film, and
a fourth ferromagnetic fibs,
wherein the third ferromagnetic film and the fourth ferromagnetic film are antiferromagnetically exchange-coupled with each other through the second nonmagnetic film.
18. A magneto-resistive effect memory cell according to claim 17, wherein at least one of the first ferromagnetic film and the second ferromagnetic film has a magnetization direction in a planar direction thereof.
19. A magneto-resistive effect memory cell according to claim 17, wherein the third ferromagnetic film and the fourth ferromagnetic film have different strengths of saturated magnetization from each other.
20. A magneto-resistive effect memory cell according to claim 17, wherein the third ferromagnetic film and the fourth ferromagnetic film have different thicknesses from each other.
21. A magneto-resistive effect memory cell according to claim 17, wherein the third ferromagnetic film and the fourth ferromagnetic film are magnetization-rotated while being kept anti-parallel to each other.
22. A magneto-resistive effect memory cell according to claim 17, wherein the second ferromagnetic film includes:
a third nonmagnetic film,
a fifth ferromagnetic film, and
a sixth ferromagnetic film,
wherein the fifth ferromagnetic film and the sixth ferromagnetic film are antiferromagnetically exchange-coupled with each other through the third nonmagnetic film.
23. A magneto-resistive effect memory cell according to claim 17, wherein the first nonmagnetic film is an insulating film.
24. A magneto-resistive effect memory cell according to claim 17, wherein:
at least two layer structures are provided, each layer structure including the first ferromagnetic film, the second ferromagnetic film, and the first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film, and
the at least two layer structures are stacked with at least one fourth nonmagnetic film interposed therebetween.
25. A magneto-resistive effect memory cell according to claim 24, wherein the second ferromagnetic films of the at least two layer structures have different magnetic coercive forces from each other.
26. An MRAM, comprising a plurality of magneto-resistive effect memory cells according to claim 17, wherein the plurality of conductive films are arranged in at least one prescribed direction.
27. A method for writing information to and reading information from a magneto-resistive effect memory cell, the magneto-resistive effect memory cell including:
a first ferromagnetic film,
a second ferromagnetic film,
a nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film, end at least one conductive film,
wherein the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by en external magnetic field,
the method comprising the steps of:
causing a first current to flow in the at least one conductive film to cause a magnetization rotation of at least the first ferromagnetic film, thereby writing information in the magneto-resistive effect memory cell; and
causing a second current to flow in the first ferromagnetic film, the nonmagnetic film, and the second ferromagnetic film; and causing a third current, which is a combination of a positive bias current and a negative bias current, to flow in the at least one conductive film, thereby reading a voltage value corresponding to the second current and thus reading information written in the magneto-resistive element memory call.
28. A method according to claim 27, wherein the third current has a level which causes a magnetization rotation of the first ferromagnetic film but does not cause a magnetization rotation of the second ferromagnetic film.
29. A method for writing information to and reading information from an MRAM including a plurality of magneto-resistive effect memory cells, each magneto-resistive effect memory cell including:
a first ferromagnetic film,
a second ferromagnetic film,
a nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film, and at least one conductive film,
wherein the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field,
the plurality of conductive films being arranged in at least one prescribed direction, the method comprising the steps of:
causing a first current to flow in the at least one conductive film of a first magneto-resistive effect memory cell of the plurality of magneto-resistive effect memory cells to cause a magnetization rotation of at least the first ferromagnetic film of the first magneto-resistive effect memory cell, thereby writing information in the first magneto-resistive effect memory cell; and
causing a second current to flow in the first ferromagnetic film, the nonmagnetic film, and the second ferromagnetic film of the first magneto-resistive effect memory cell; and causing a third current, which is a combination of a positive bias current and a negative bias current, to flow in the at least one conductive film of the first magneto-resistive effect memory cell, thereby reading a voltage value corresponding to the second current and thus reading information written in the first magneto-resistive effect memory cell.
30. A method according to claim 29, wherein the third current has a level which causes a magnetization rotation of the first ferromagnetic film but does not cause a magnetization rotation of the second ferromagnetic film.
31. A method according to claim 29, further comprising the step of causing a fourth current to flow in the at least one conductive film of a second magneto-resistive effect memory cell other than the first magneto-resistive effect memory cell, the fourth current flowing in a direction for canceling a magnetic field leaked to a third magneto-resistive effect memory cell other than the first magneto-resistive effect memory cell.
32. A method according to claim 31, wherein the second magneto-resistive effect memory cell is identical with the third magneto-resistive effect memory cell.
33. A method for reading information from a magneto-resistive effect memory cell, the magneto-resistive effect memory cell including:
a first ferromagnetic film,
a second ferromagnetic film,
a nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film, and
at least one conductive film,
wherein the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field,
the method comprising the step of:
causing a first current to flow in the first ferromagnetic film, the nonmagnetic film, and the second ferromagnetic film; and causing a second current, which is a combination of a positive bias current and a negative bias current, to flow in the at least one conductive film, thereby reading a voltage value corresponding to the first current and thus reading information written in the magneto-resistive effect memory cell.
34. A method according to claim 33, wherein the second current has a level which causes a magnetization rotation of the first ferromagnetic film but does not cause a magnetization rotation of the second ferromagnetic film.
35. A method for reading information from an MRAM including a plurality of magneto-resistive effect memory cells, each magneto-resistive effect memory cell including:
a first ferromagnetic film,
a second ferromagnetic film,
a nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film, and
at least one conductive film,
wherein the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field,
the plurality of conductive films being arranged in at least one prescribed direction, the method comprising the step of:
causing a first current to flow in the first ferromagnetic film, the nonmagnetic film, and the second ferromagnetic film of a first magneto-resistive effect memory cell of the plurality of magneto-resistive effect memory cells; and causing a second current, which is a combination of a positive bias current and a negative bias current, to flow in the at least one conductive film of the first magneto-resistive effect memory cell, thereby reading a voltage value corresponding to the first current and thus reading information written in the first magneto-resistive effect memory cell.
36. A method according to claim 35, wherein the second current has a level which causes a magnetization rotation of the first ferromagnetic film but does not cause a magnetization rotation of the second ferromagnetic film.
37. A method according to claim 35, further comprising the step of causing a third current to flow in the at least one conductive film of a second magneto-resistive effect memory cell other than the first magneto-resistive effect memory cell, the third current flowing in a direction for canceling a magnetic field leaked to a third magneto-resistive effect memory cell other than the first magneto-resistive effect memory cell.
38. A method according to claim 37, wherein the second magneto-resistive effect memory cell is identical with the third magneto-resistive effect memory cell.
39. A method for writing multiple levels of a signal to and reading multiple levels of a signal from a magneto-resistive effect memory cell, the magneto-resistive effect memory cell including:
at least two layer structures;
at least one first nonmagnetic film interposed between the at least two layer structures; and
at least one conductive film,
wherein:
each of the at least two layer structures includes a first ferromagnetic film, a second ferromagnetic film, and a second nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film, and
the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film,
the method comprising the steps of:
causing a first current in the at least one conductive film to cause a magnetization rotation of at least one of the first ferromagnetic film and the second ferromagnetic film of each of the at least two layer structures, or to cause a magnetization rotation of none of the first ferromagnetic film and the second ferromagnetic film of each of the at least two layer structures, thereby writing multiple levels of a signal in the magneto-resistive effect memory cell; and
causing a second current to each of the at least two layer structures to compare a resistance value corresponding to the second current and a reference resistance value, thereby reading the multiple levels of the signal written in the magneto-resistive effect memory cell.
40. A method according to 39, further comprising the step of causing a current which rises in a gradually increasing manner to flow in the at least one conductive film.
41. A method for writing multiple levels of a signal to a magneto-resistive effect memory cell, the magneto-resistive effect memory cell including:
at least two layer structures;
at least one first nonmagnetic film interposed between the at least two layer structures; and
at least one conductive film,
wherein:
each of the at least two layer structures includes a first ferromagnetic film, a second ferromagnetic film, and a second nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film, and
the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film,
the method comprising the steps of:
causing a first current to flow in the at least one conductive film to cause a magnetization rotation of at least one of the first ferromagnetic film and the second ferromagnetic film of each of the at least two layer structures, or to cause a magnetization rotation of none of the first ferromagnetic film and the second ferromagnetic film of each of the at least two layer structures, thereby writing multiple levels of a signal in the magneto-resistive effect memory cell.
42. A method for reading multiple levels of a signal from a magneto-resistive effect memory cell, the magneto-resistive effect memory cell including:
at least two layer structures;
at least one first nonmagnetic film interposed between the at least two layer structures; and
at least one conductive film,
wherein:
each of the at least two layer structures includes a first ferromagnetic film, a second ferromagnetic film, and a second nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film, and
the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film,
the method comprising the steps of:
causing a first current to flow in each of the at least two layer structures to compare a resistance value corresponding to the first current and a reference resistance value, thereby reading multiple levels of a signal written in the magneto-resistive effect memory cell.
43. A method according to 42, further comprising the step of causing a current which rises in a gradually increasing manner to flow in the at least one conductive film.
44. A method for writing multiple levels of a signal to and reading multiple levels of a signal from an MRAM including a plurality of magneto-resistive effect memory cells, each magneto-resistive effect memory cell, including:
at least two layer structures;
at least one first nonmagnetic film interposed between the at least two layer structures; and
at least one conductive film,
wherein:
each of the at least two layer structures includes a first ferromagnetic film, a second ferromagnetic film, and a second nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film, and
the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film,
the plurality of conductive films being arranged in at least one prescribed direction, the method comprising the steps of:
causing a first current to flow in the at least one conductive film of a first magneto-resistive effect memory cell of the plurality of magneto-resistive effect memory cells to cause a magnetization rotation of at least one of the first ferromagnetic film and the second ferromagnetic film of each of the at least two layer structures of the first magneto-resistive effect memory cell, or to cause a magnetization rotation of none of the first ferromagnetic film and the second ferromagnetic film of each of the at least two layer structures of the first magneto-resistive effect memory cell, thereby writing multiple levels of a signal in the first magneto-resistive effect memory cell; and
causing a second current to flow in each of the at least two layer structures of the first magneto-resistive effect memory cell to compare a resistance value corresponding to the second current and a reference resistance value, thereby reading the multiple levels of the signal written in the first magneto-resistive effect memory cell.
45. A method according to 44, further comprising the step of causing a current which rises in a gradually increasing manner to flow in the at least one conductive film.
46. A method according to 44, further comprising the step of causing a third current to flow in the at least one conductive film of a second magneto-resistive effect memory cell other than the first magneto-resistive effect memory cell, the third current flowing in a direction for canceling a magnetic field leaked to a third magneto-resistive effect memory cell other than the first magneto-resistive effect memory cell.
47. A method according to 46, wherein the second magneto-resistive effect memory cell is identical with the third magneto-resistive effect memory cell.
48. A method for writing multiple levels of a signal in an MRAM including a plurality of magneto-resistive effect memory cells, each magneto-resistive effect memory cell including:
at least two layer structures;
at least one first nonmagnetic film interposed between the at least two layer structures; and
at least one conductive film,
wherein:
each of the at least two layer structures includes a first ferromagnetic film, a second ferromagnetic film, and a second nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film, and
the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film,
the plurality of conductive films being arranged in at least one prescribed direction, the method comprising the steps of:
causing a first current of flow in the at least one conductive film of a first magneto-resistive effect memory cell of the plurality of magneto-resistive effect memory cells to cause a magnetization rotation of at least one of the first ferromagnetic film and the second ferromagnetic film of each of the at least two layer structures of the first magneto-resistive effect memory cell, or to cause a magnetization rotation of none of the first ferromagnetic film and the second ferromagnetic film of each of the at least two layer structures of the first magneto-resistive effect memory cell, thereby writing multiple levels of a signal in the first magneto-resistive effect memory cell.
49. A method according to claim 48, further comprising the step of causing a second current to flow in the at least one conductive film or a second magneto-resistive effect memory cell other than the first magneto-resistive effect memory cell, the second current flowing in a direction for canceling a magnetic field leaked to a third magneto-resistive effect memory cell other than the first magneto-resistive effect memory cell.
50. A method according to claim 49, wherein the second magneto-resistive effect memory cell is identical with the third magneto-resistive effect memory cell.
51. A method for reading multiple levels of a signal from an MRAM including a plurality of magneto-resistive effect memory cells, each magneto-resistive effect memory cell including:
at least two layer structures;
at least one first nonmagnetic film interposed between the at least two layer structures; and
at least one conductive film,
wherein:
each of the at least two layer structures includes a first ferromagnetic film, a second ferromagnetic film, and a second nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film, and
the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film,
the plurality of conductive films being arranged in at least one prescribed direction, the method comprising the steps of:
causing a first current to flow in each of the at least two layer structures of a first magneto-resistive effect memory cell of the plurality of magneto-resistive effect memory cells to compare a resistance value corresponding to a the first current and a reference resistance value, thereby reading multiple levels of a signal written in the first magneto-resistive effect memory cell.
52. A method according to claim 51, further comprising the step of causing a current which rises in a gradually increasing manner to flow in the at least one conductive film.
53. A method according to claim 51, further comprising the step of causing a second current to flow in the at least one conductive film of a second magneto-resistive effect memory call other than the first magneto-resistive effect memory cell, the second current flowing in a direction for canceling a magnetic field leaked to a third magneto-resistive effect memory cell other than the first magneto-resistive effect memory cell.
54. A method according to claim 53, wherein the second magneto-resistive effect memory cell is identical with the third magneto-resistive effect memory cell.
55. A magneto-resistive effect element according to claim 1, wherein the first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A chromatographic separation medium, comprising:
an elongated housing containing a photonic crystal column enclosed therein having a photonic band structure which interacts with electromagnetic radiation along a length of the photonic crystal column, the photonic crystal column including interconnected voids defining flow passageways through the photonic crystal column for a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated by the photonic crystal column, wherein changes in the photonic band structure of the photonic crystal column occur as the liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated is flowed through said photonic crystal column and separated therein.
2. The chromatographic separation medium according to claim 1 wherein said photonic band structure includes one of a photonic band gap, a stop-band, and combinations thereof.
3. The chromatographic separation medium according to claim 2 wherein said changes in the photonic band structure of the photonic crystal column as a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated is flowed through said photonic crystal column and separated therein include changes in the photonic band structure upon changes in refractive index of the mobile phase traveling through the photonic crystal column, which cause a shift in a wavelength of optical diffraction along the length of the photonic crystal that can be monitored spectroscopically.
4. The chromatographic separation medium according to claim 3 wherein the changes in the refractive index of the mobile phase arises due to a change of the composition of the mobile phase constituents or due to the presence of dissolved chemical moieties.
5. The chromatographic separation medium according to claim 2 wherein said photonic band structure displays a photonic band gap which can be detected either in reflection or transmission or in combinations thereof in an ultraviolet, visible, near infrared, andor infrared region of the electromagnetic spectrum.
6. The chromatographic separation medium according to claim 2 wherein the photonic crystal column includes a packed array of colloidal crystal particles defining an elongated photonic crystal, wherein the interconnected voids are spaces between the colloidal crystal particles.
7. The chromatographic separation medium according to claim 6 wherein the colloidal crystal particles are substantially monodisperse colloidal microspheres.
8. The chromatographic separation medium according to claim 7 wherein said substantially monodisperse colloidal microspheres have diameters in a range from about 50 nanometers to about 3 micrometers.
9. The chromatographic separation medium according to claim 7 wherein said substantially monodisperse colloidal microspheres are made of a solid or gel material.
10. The chromatographic separation medium according to claim 7 wherein said substantially monodisperse colloidal microspheres are porous with different pore sizes in a range from \u212bngstroms to an order of micrometers.
11. The chromatographic separation medium according to claim 7 wherein said substantially monodisperse colloidal microspheres are porous with ordered monodisperse pores with pore sizes in a range from \u212bngstroms to an order of micrometers.
12. The chromatographic separation medium according to claim 7 wherein said substantially monodisperse colloidal microspheres are made of a material selected from the group consisting of ceramics, silica, titania, zirconia, alumina, magnesia, oxides, chalcogenides, borides, carbides, pnictides, silicides, metals, polymers, nano-crystals, composites of said aforesaid materials and spherical core-shell particles made of combinations of said aforesaid materials.
13. The chromatographic separation medium according to claim 12 wherein said polymers are selected from the group consisting of non-cross-linked and cross-linked polystyrene, polymethacrylates, polyacrylates, polyurethanes, polyketones, polyethers, polyvinyl, polybutadiene, inorganic polymers, metallopolymers, copolymers, grafted polymers, block-copolymers, dendrimers, biopolymers, and composites of the aforesaid polymer materials.
14. The chromatographic separation medium according to claim 7 wherein said substantially monodisperse colloidal microspheres each have a surface, which is modified by one of plasma treatment in the presence of reactive or non-reactive gases, and by chemical agents including physically or chemically surface-immobilizing said agents selected from the group consisting of etching agents, hydrophobic agents, charge-altering and carrying agents, functional group carrying agents, surface-active molecules, biomolecular agents, nanoclusters and polyelectrolytes.
15. The chromatographic separation medium according to claim 2 wherein the elongated housing is made of a material which is transparent or partially transparent material in ultra-violet, visible, near infrared and infrared spectral regions of the electromagnetic spectrum.
16. The chromatographic separation medium according to claim 15 wherein the elongated housing is made of a material selected from the group consisting of polymers, oxides, chalcogenides, glasses, metals and semiconductors, combinations and composites of the aforesaid materials.
17. The chromatographic separation medium according to claim 2 wherein the elongated housing is porous.
18. The chromatographic separation medium to claim 17 wherein said porous elongated housing has pores with different pore sizes in a range from \u212bngstroms to an order of micrometers.
19. The chromatographic separation medium according to claim 17 wherein said porous elongated housing has ordered monodisperse pores with pore sizes in a range from \u212bngstroms to an order of micrometers.
20. The chromatographic separation medium according to claim 2 wherein the elongated housing includes chemical surface patterns on an interior surface of the elongated housing.
21. The chromatographic separation medium according to claim 2 wherein the elongated housing includes relief surface patterns on an interior surface of the elongated housing.
22. The chromatographic separation medium according to claim 2 wherein the elongated housing is rigid or flexible.
23. The chromatographic separation medium according to claim 5 integrated as part of a chromatography apparatus including an optical system optically coupled to said photonic crystal column for monitoring changes in the photonic band structure of the photonic crystal column as a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated is flowed through said photonic crystal column and separated therein.
24. The chromatographic apparatus according to claim 23 wherein said optical system optically coupled to said photonic crystal column includes a light source, directing and focusing optics for guiding a beam of light from said light source to said photonic crystal column and from said photonic crystal column in reflectance or transmission mode to a light analysis means for spectrally dispersing the light after interaction of the light beam with the photonic crystal column, and a detection means for detecting said dispersed light.
25. The chromatographic apparatus according to claim 24 including a gantry to which the optical system is attached for moving said optical system along a length of said elongated housing containing the photonic crystal column.
26. The chromatography apparatus according to claim 24 wherein said light analysis means is one of a monochromator, a grating, a prism, and a photonic crystal, which spectrally disperses the light.
27. The chromatography apparatus according to claim 24 wherein said detection means is a point detector or an array detector.
28. The chromatographic separation medium according to claim 1 wherein the photonic crystal column is an inverted packed array of colloidal crystal particles defining an elongated photonic crystal having interconnected void spaces between the colloidal crystal particles, wherein a material of pre-selected index of refraction is infiltrated into the interconnected void spaces and the colloidal crystal particles are removed forming second interconnected air voids thereby leaving behind a second photonic crystal column comprised of the material of pre-selected index of refraction and the second interconnected air voids, the second colloidal photonic crystal column having substantially uniform optical properties along a length of the column having a second photonic band structure which interacts with electromagnetic radiation along a length of the photonic crystal, and the second interconnected air voids defining second flow passageways through said material of pre-selected index of refraction for a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated by the second photonic crystal column.
29. The chromatographic separation medium according to claim 28 wherein said second photonic band structure includes one of a photonic band gap, a stop-band, and combinations thereof.
30. The chromatographic separation medium according to claim 29 wherein changes are induced in the second photonic band structure of the second photonic crystal column as a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated is flowed through said second photonic crystal column and separated therein include changes in the second photonic band structure upon changes in the refractive index of the mobile phase traveling through the second photonic crystal column, which cause a shift in a wavelength of optical diffraction along the length of the second photonic crystal that can be monitored spectroscopically.
31. The chromatographic separation medium according to claim 29 wherein the interconnected air voids are substantially monodisperse.
32. The chromatographic separation medium according to claim 31 wherein the substantially monodisperse air voids have diameters in a range from about 50 nanometers to about 3 micrometers.
33. The chromatographic separation medium according to claim 29 wherein said material of pre-selected index of refraction is a solid or gel material.
34. The chromatographic separation medium according to claim 29 wherein said material of pre-selected index of refraction is porous with different pore sizes in a range from \u212bngstroms to an order of micrometers.
35. The chromatographic separation medium according to claim 29 wherein said material of pre-selected index of refraction is porous having ordered monodisperse pores with pore sizes in a range from \u212bngstroms to an order of micrometers.
36. The chromatographic separation medium according to claim 29 wherein an interior surface of said material of pre-selected index of refraction, in which the air voids are embedded, is modified by one of plasma treatment in the presence of reactive or non-reactive gases, and chemical agents including physically or chemically surface-immobilizing said agents selected from the group consisting of etching agents, hydrophobic agents, charge-altering and carrying agents, functional group carrying agents, surface-active molecules, biomolecular agents, nanoclusters and polyelectrolytes.
37. The chromatographic separation medium according to claim 29 wherein said material of pre-selected index of refraction is selected from the group consisting of ceramics, silica, titania, zirconia, alumina, magnesia, oxides, chalcogenides, borides, carbides, pnictides, silicides, metals, polymers, nano-crystals and composites of the aforesaid materials.
38. The chromatographic separation medium according to claim 37 wherein said polymers are selected from the group consisting of cross-linked and non cross-linked polystyrene, polymethacrylates, polyacrylates, polyurethanes, polyketones, polyethers, polyvinyl, polybutadiene, inorganic polymers, metallopolymers, copolymers, grafted polymers, block-copolymers, dendrimers, biopolymers, and composites of the aforesaid polymer materials.
39. The chromatographic separation medium according to claim 29 wherein the elongated housing is made of a material which is transparent or partially transparent in ultra-violet, visible, near infrared and infrared spectral regions of the electromagnetic spectrum.
40. The chromatographic separation medium according to claim 39 wherein the elongated housing is made of a material selected from the group consisting of polymers, oxides, chalcogenides, glasses, metals and semiconductors, combinations and composites of the aforesaid materials.
41. The chromatographic separation medium according to claim 29 wherein the elongated housing is porous.
42. The chromatographic separation medium to claim 41 wherein said porous elongated housing has pores with different pore sizes in a range from \u212bngstroms to an order of micrometers.
43. The chromatographic separation medium according to claim 41 wherein said porous elongated housing has ordered monodisperse pores with pore sizes in a range from \u212bngstroms to an order of micrometers.
44. The chromatographic separation medium according to claim 29 wherein the elongated housing includes chemical surface patterns on an interior surface of the elongated housing.
45. The chromatographic separation medium according to claim 29 wherein the elongated housing includes relief surface patterns on an interior surface of the elongated housing.
46. The chromatographic separation medium according to claim 29 wherein the elongated housing is rigid or flexible.
47. The chromatographic separation medium according to claim 30 integrated as part of a chromatographic apparatus including an optical system optically coupled to said photonic crystal column for monitoring changes in the photonic band structure of the photonic crystal column as a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated is flowed through said second photonic crystal column and separated therein.
48. The chromatographic apparatus according to claim 47 wherein said optical system optically coupled to said photonic crystal column includes a light source, directing and focusing optics for guiding a beam of light from said light source to said photonic crystal column and from said photonic crystal column in reflectance or transmission mode to a light analysis means for spectrally dispersing the light after interaction of the light beam with the photonic crystal column, and a detection means for detecting said dispersed light.
49. The chromatographic apparatus according to claim 48 including a gantry to which the optical system is attached for moving said optical system along a length of said elongated housing containing the photonic crystal column.
50. The chromatographic apparatus according to claim 48 wherein said light analysis means is one of a monochromator, a grating, a prism, and a photonic crystal, which spectrally disperses the light.
51. The chromatographic apparatus according to claim 48 wherein said detection means is a point detector or an array detector.
52. A method of producing a photonic crystal column having a photonic band structure which interacts with electromagnetic radiation along a length of the photonic crystal column, the photonic crystal column including interconnected voids defining flow passageways through the photonic crystal column for a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated by the photonic crystal column, the method including the steps of:
a) preparing a dispersion of colloidal particles in a dispersion medium and flowing the dispersion through a first open end of an elongated housing until a colloidal dispersion droplet forms at a second open end of the elongated housing wherein evaporation of the dispersion medium leads to formation of a colloidal crystal plug at the second open end, which continuously grows into the elongated housing due to evaporation at the second open end or evaporation through pores of the elongated housing, causing dispersion medium depletion between the colloidal particles and directing colloidal crystal formation; and
b) exerting pressure on the colloidal dispersion column along the first open end of the elongated housing for generating a force drawing the colloidal dispersion into the capillary after formation of the colloidal crystal plug wherein a colloidal crystal column grows inside the elongated housing and the dispersion medium evaporates out of the elongated housing, the colloidal particles being selected to give a colloidal photonic crystal column with interconnected voids between the colloidal particles defining flow passageways through the colloidal photonic crystal column and substantially uniform optical properties along the length of the column having a photonic band structure which interacts with electromagnetic radiation.
53. The chromatographic separation medium according to claim 52 wherein said photonic band structure includes one of a photonic band gap, a stop-band, and combinations thereof.
54. The method of producing a photonic crystal column according to claim 53 wherein said colloidal particles are consolidated by any one or combination of thermal sintering, hydrothermal treatment and chemical vapour deposition to cause, or increase necking of the colloidal particles.
55. The method of producing a photonic crystal column according to claim 53 wherein the colloidal photonic crystal column has a length in a range from micrometers to meters.
56. The method of producing a photonic crystal column according to claim 53 wherein the elongated housing is rigid or flexible.
57. The method of producing a photonic crystal column according to claim 53 wherein the elongated housing has an inner cross-section which is one of square, rectangular, triangular, hexagonal, elliptical and circular, and wherein the inner cross-section has dimensions in a range from about 10 micrometers to several centimeters.
58. The method of producing a photonic crystal column according to claim 53 wherein the colloidal crystal particles are substantially monodisperse colloidal microspheres.
59. The method of producing a photonic crystal column according to claim 58 wherein said substantially monodisperse colloidal microspheres have diameters in a range from about 50 nanometers to about 3 micrometers.
60. The method of producing a photonic crystal column according to claim 58 wherein said substantially monodisperse colloidal microspheres are made of a solid or gel material.
61. The method of producing a photonic crystal column according to claim 58 wherein said substantially monodisperse colloidal microspheres are porous with different pore sizes in a range from \u212bngstroms to an order of micrometers.
62. The method of producing a photonic crystal column according to claim 58 wherein said substantially monodisperse colloidal microspheres are porous with ordered monodisperse pores with pore sizes in a range from \u212bngstroms to an order of micrometers.
63. The method of producing a photonic crystal column according to claim 58 wherein said substantially monodisperse colloidal microspheres are made of a material selected from the group consisting of ceramics, silica, titania, zirconia, alumina, magnesia, oxides, chalcogenides, borides, carbides, pnictides, silicides, metals, polymers, nano-crystals, composites of aforesaid materials and spherical core-shell particles made of combinations of the aforesaid materials.
64. The method of producing a photonic crystal column according to claim 63 wherein said polymers are selected from the group consisting of non-cross-linked and cross-linked polystyrene, polymethacrylates, polyacrylates, polyurethanes, polyketones, polyethers, polyvinyl, polybutadiene, inorganic polymers, metallopolymers, copolymers, grafted polymers, block-copolymers, dendrimers, biopolymers and composites of the aforesaid polymer materials.
65. The method of producing a photonic crystal column according to claim 58 wherein said substantially monodisperse colloidal microspheres have surfaces which are modified by one of plasma treatment in the presence of reactive or non-reactive gases, by chemical agents including physically or chemically surface-immobilizing said agents selected from the group consisting of etching agents, hydrophobic agents, charge-altering and carrying agents, functional group carrying agents, surface-active molecules, biomolecular agents, nanoclusters and polyelectrolytes.
66. The method of producing a photonic crystal column according to claim 53 including removing the colloidal photonic crystal column from the elongated housing to form a free-standing colloidal photonic crystal column.
67. The method of producing a photonic crystal column according to claim 53 wherein the elongated housing is made of a material which is optically transparent or partially transparent in an ultra-violet, visible, near infrared and infrared spectral regions of the electromagnetic spectrum.
68. The method of producing a photonic crystal column according to claim 53 wherein the elongated housing is made of a material selected from the group consisting of polymers, oxides, chalcogenides, glasses, metals and semiconductors, combinations and composites of the aforesaid materials.
69. The method of producing a photonic crystal column according to claim 53 including infiltrating a fluid containing a solution of a surface-modifying reagent through the interconnected void spaces between the colloidal particles of the photonic crystal column and inducing a reaction between the surface-modifying reagent and an exterior surface of the colloidal particles for modifying the exterior surface of the colloidal particles by etching or physically or chemically immobilizing said reagent.
70. The method of producing a photonic crystal column according to claim 69 wherein the solution of a surface-modifying reagent includes one or more surface-modifying reagent components which spread or separate from each other in the photonic crystal column to give a gradient of surface properties along a length of the photonic crystal column.
71. The method of producing a photonic crystal column according to claim 53 wherein prior to producing the photonic crystal column an external surface of the colloidal particles are modified by being exposed to a surface-modifying plasma with reactive or non-reactive gases, or to a surface-modifying reagent after which a reaction is induced between the surface-modifying reagent and the exterior surface of the colloidal particles for physically or chemically immobilizing said reagents to the exterior surface.
72. The method of producing a photonic crystal column according to claim 53 wherein the steps of flowing the dispersion through the first open end of the elongated housing and exerting pressure on the colloidal dispersion column along the first open end of the elongated housing includes containing the dispersion in a container, inserting the first open end of the elongated housing into the container and pressurizing the container wherein the dispersion flows into the elongated housing and the dispersion is forced to the second open end of the elongated housing where the dispersion medium evaporates, including controlling a pressure used to pressurize the container for controlling a rate of evaporation of the dispersion medium and controlling growth of an array of colloidal crystals in the elongated housing during formation of the photonic crystal column.
73. The method of producing a photonic crystal column according to claim 72 wherein the container is pressurized using a non-reactive gas.
74. The method of producing a photonic crystal column according to claim 72 wherein the container includes a movable piston, and wherein the container is pressurized by moving the piston so as to decrease an internal volume of the container.
75. The method of producing a photonic crystal column according to claim 72 wherein the container is pressurized by pumping a liquid into the container.
76. The method of producing a photonic crystal column according to claim 75 wherein the liquid is the dispersion.
77. The method of producing a photonic crystal column according to claim 75 wherein the liquid is a non-miscible liquid, an organic oil, a silicone oil or a fluorinated compound.
78. The method of producing a photonic crystal column according to claim 72 wherein the container is pressurized by being placed in a centrifuge, wherein upon being spun a centripetal force acts on the dispersion and a dispersion column inside the elongated housing.
79. The method of producing a photonic crystal column according to claim 72 wherein the container is pressurized by heating the dispersion in the container.
80. The method of producing a photonic crystal column according to claim 72 wherein the step of exerting pressure on the colloidal dispersion column along the first open end of the elongated housing for generating a force drawing the colloidal dispersion into the capillary includes applying reduced pressure or applying a vacuum to the second open end of the capillary.
81. The method of producing a photonic crystal column according to claim 67 wherein the elongated housing is porous.
82. The method of producing a photonic crystal column according to claim 81 wherein said porous elongated housing has pores with different pore sizes in a range from \u212bngstroms to an order of micrometers.
83. The method of producing a photonic crystal column according to claim 81 wherein said porous elongated housing has ordered monodisperse pores with pore sizes in a range from \u212bngstroms to an order of micrometers.
84. The method of producing a photonic crystal column according to claim 67 wherein the elongated housing includes chemical surface patterns on an interior surface of the elongated housing.
85. The method of producing a photonic crystal column according to claim 67 wherein the elongated housing includes relief surface patterns on an interior surface of the elongated housing.
86. The method of producing a photonic crystal column according to claim 52 wherein the photonic crystal column is a first photonic crystal column, including producing a second photonic crystal column by inverting the first colloidal photonic crystal column by the steps of:
infiltrating a gas, melt, liquid, or solution being a precursor or containing a precursor of a selected material into the flow passageways through the colloidal photonic crystal column formed by the interconnected void spaces between the colloidal particles;
inducing growth of the selected material in the void spaces from the precursor; and
removing the colloidal particles to leave behind an inverted photonic crystal column comprised of the selected material forming the second photonic crystal column having interconnected voids formed by removing the colloidal particles defining flow passageways through the second colloidal photonic crystal column and having substantially uniform optical properties along the length of the column having a second photonic band structure which interacts with electromagnetic radiation along a length of the photonic crystal.
87. The method according to claim 86 wherein said second photonic band structure includes one of a photonic band gap, a stop-band, and combinations thereof.
88. The method according to claim 87 wherein the step of removing the colloidal particles to leave behind an inverted photonic crystal column includes any one of exposing the first photonic crystal column to a plasma, thermal treatment, calcination, photocalcination, solvent etching and combinations thereof.
89. The method according to claim 87 wherein the precursor of a selected material contains a constituent which, upon reaction of the precursor, produces a solid comprising the constituent itself.
90. The method according to claim 87 wherein the precursor of a selected material contains a mixture of constituents, which upon reaction of the precursor, produces a solid comprising a mixture of the constituents.
91. The method according to claim 87 wherein the precursor of a selected material contains a mixture of constituents, which upon reaction of the precursor, produces a solid comprising a uniform mixture of the constituents along the length of the second photonic crystal column.
92. The method according to claim 87 wherein the precursor of a selected material contains a mixture of several constituents, which separate from each other in the photonic crystal column as the precursor is flowed into the flow passageways through the photonic crystal column to give a gradient of constituents along a length of the second photonic crystal column, which upon reaction of the precursor, produces a solid comprising a gradient of the several constituents along the length of the second photonic crystal column.
93. The method according to claim 87 wherein the selected materials are selected from the group consisting of monomeric materials, polymeric materials, organic materials, biomolecular materials, inorganic materials, organometallic materials, metallic materials, nano-particle materials and mixtures and composites thereof.
94. The method according to claim 87 including infiltrating a fluid containing a solution of a surface-modifying reagent through the flow passageways through the second colloidal photonic crystal and inducing a reaction between the surface-modifying reagent and an inner surface of the second photonic crystal material along the length of the second photonic crystal column for modifying the inner surface by etching or chemically and physically immobilizing said reagent.
95. The method according to claim 94 wherein the solution of a surface-modifying reagent includes one or more surface-modifying reagents which spread or separate from each other in the second photonic crystal column to give a gradient of surface properties along a length of the second photonic crystal column.
96. The method according to claim 87 including removing the second colloidal photonic crystal column from the elongated housing to form a free-standing second colloidal photonic crystal column.
97. The method according to claim 87 wherein the elongated housing is made of a material which is optically transparent or partially transparent in ultra-violet, visible, near infrared and infrared spectral regions of the electromagnetic spectrum.
98. The method according to claim 97 wherein the elongated housing is rigid or flexible.
99. The method according to claim 97 wherein the elongated housing has an inner cross-section which is one of square, rectangular, triangular, hexagonal, elliptical and circular, and wherein the inner cross-section has dimensions in a range from about 10 micrometers to several centimeters.
100. The method according to claim 97 wherein the elongated housing is porous.
101. The method according to claim 100 wherein said porous elongated housing has pores with different pore sizes in a range from \u212bngstroms to an order of micrometers.
102. The method according to claim 100 wherein said porous elongated housing has ordered monodisperse pores with pore sizes in a range from \u212bngstroms to an order of micrometers.
103. The method according to claim 97 wherein the elongated housing includes chemical surface patterns on the interior surface of the elongated housing.
104. The method according to claim 97 wherein the elongated housing includes relief surface patterns on the interior surface of the elongated housing.
105. The method according to claim 87 wherein the selected material forming the second photonic crystal is made of a solid or gel material.
106. The method according to claim 87 wherein the selected material forming the second photonic crystal is porous with different pore sizes in a range from \u212bngstroms to an order of micrometers.
107. The method according to claim 87 wherein the selected material forming the second photonic crystal is porous with ordered monodisperse pores with pore sizes in a range from \u212bngstroms to an order of micrometers.
108. A chromatographic method, comprising the steps of:
flowing a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated through a chromatographic separation medium which includes a photonic crystal column, the photonic crystal column having a photonic band structure which interacts with electromagnetic radiation along a length of the photonic crystal column, the photonic crystal column including interconnected voids defining flow passageways therethrough, wherein changes in the photonic band structure of the photonic crystal column occur as the liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated is flowed through said photonic crystal column and separated therein; and
spectroscopically monitoring for changes in the photonic band structure of the photonic crystal column as the liquid, gaseous, critical, or supercritical mobile phase flows through the photonic crystal column and correlating any changes in the photonic band structure with the materials being separated.
109. The chromatographic method according to claim 108 wherein said photonic band structure includes one of a photonic band gap, a stop-band, and combinations thereof.
110. The chromatographic method according to claim 108 wherein said changes in the photonic band structure of the photonic crystal column as a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated is flowed through said photonic crystal column and separated therein include changes in the photonic band structure upon changes in refractive index of the mobile phase traveling through the photonic crystal column, which cause a shift in a wavelength of optical diffraction along the length of the photonic crystal that can be monitored spectroscopically, and wherein the changes in the refractive index of the mobile phase arises due to a change of the composition of the mobile phase constituents or due to the presence of dissolved chemical moieties.
111. The chromatographic method according to claim 108 wherein the photonic crystal column includes an array of packed colloidal crystal particles defining an elongated photonic crystal inside an elongated housing, wherein the interconnected voids are spaces between the packed colloidal crystal particles forming flow passageways through said packed colloidal crystal particles for a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated by the photonic crystal column.
112. The chromatographic method according to claim 111 wherein the colloidal photonic crystal column is removed from the elongated housing to form a free-standing colloidal photonic crystal column.
113. The chromatographic method according claim 108 wherein the photonic crystal column includes an array of packed colloidal crystal particles defining an elongated photonic crystal, including a gradient of one or more surface-modifying reagent components along a length of the photonic crystal column wherein the interconnected voids are spaces between the packed colloidal crystal particles forming flow passageways through said photonic crystal column for a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated by the surface gradient photonic crystal column.
114. The chromatographic method according to claim 113 wherein the colloidal photonic crystal column is removed from the elongated housing to form a free-standing colloidal photonic crystal column.
115. The chromatographic method according to claim 111 wherein the colloidal crystal particles are substantially monodisperse colloidal microspheres.
116. The chromatographic method according to claim 115 wherein said substantially monodisperse colloidal microspheres have diameters in a range from about 50 nanometers to about 3 micrometers.
117. The chromatographic method according to claim 115 wherein said substantially monodisperse colloidal microspheres are made of a solid or gel material.
118. The chromatographic method according to claim 115 wherein said substantially monodisperse colloidal microspheres are porous with different pore sizes in a range from \u212bngstroms to an order of micrometers.
119. The chromatographic method according to claim 115 wherein said substantially monodisperse colloidal microspheres are porous with ordered monodisperse pores with pore sizes in a range from \u212bngstroms to an order of micrometers.
120. The chromatographic method according to claim 115 wherein said colloidal particles are consolidated by any one or combination of thermal sintering, hydrothermal treatment and chemical vapour deposition to cause, or increase necking of the colloidal particles.
121. The chromatographic method according to claim 115 wherein said substantially monodisperse colloidal microspheres are made of a material selected from the group consisting of ceramics, silica, titania, zirconia, alumina, magnesia, oxides, chalcogenides, borides, carbides, pnictides, silicides, metals, polymers, nano-crystals, composites of aforesaid materials and spherical core-shell particles made of combinations of the aforesaid materials.
122. The chromatographic method according to claim 121 wherein said polymers are selected from the group consisting of non-cross-linked and cross-linked polystyrene, polymethacrylates, polyurethanes, polyketones, polyethers, polyvinyl, polybutadiene, inorganic polymers, metallopolymers, copolymers, grafted polymers, block-copolymers, dendrimers, biopolymers, and composites of the aforesaid polymer materials.
123. The chromatographic method according to claim 115 wherein said substantially monodisperse colloidal microspheres each having a surface, which is modified by one of plasma treatment in the presence of reactive or non-reactive gases, and chemical agents including physically or chemically surface-immobilizing said agents selected from the group consisting of etching agents, hydrophobic agents, charge-altering and carrying agents, functional group carrying agents, surface-active molecules, biomolecular agents, nanoclusters and polyelectrolytes.
124. The chromatographic method according to claim 111 wherein the colloidal photonic crystal column has a length in a range from micrometers to meters.
125. The chromatographic method according to claim 111 wherein the elongated housing is made of a material which is optically transparent or partially transparent material in the ultra-violet, visible, near infrared and infrared spectral regions.
126. The chromatographic method according to claim 125 wherein the elongated housing is rigid or flexible.
127. The chromatographic method according to claim 125 wherein the elongated housing has an inner cross-section which is one of square, rectangular, triangular, hexagonal, elliptical and circular, and wherein the inner cross-section has dimensions in a range from about 10 micrometers to several centimeters.
128. The chromatographic method according to claim 125 wherein the elongated housing is porous.
129. The chromatographic method according to claim 128 wherein said porous elongated housing has pores with different pore sizes in a range from \u212bngstroms to an order of micrometers.
130. The chromatographic method according to claim 128 wherein said porous elongated housing has ordered monodisperse pores with pore sizes in a range from \u212bngstroms to an order of micrometers.
131. The chromatographic method according to claim 127 wherein the elongated housing includes chemical surface patterns on the interior surface of the elongated housing.
132. The chromatographic method according to claim 127 wherein the elongated housing includes relief surface patterns on the interior surface of the elongated housing.
133. The chromatographic method according to claim 127 wherein the elongated housing is made of a material selected from the group consisting of polymers, oxides, chalcogenides, glasses, metals and semiconductors, combinations and composites of aforesaid materials.
134. The chromatographic method according to claim 108 wherein the step of spectroscopically monitoring for changes in the photonic band structure of the photonic crystal column includes coupling an optical system to said photonic crystal column for monitoring changes in the photonic band structure of the photonic crystal column, wherein said optical system includes a light source, directing and focusing optics for guiding a beam of light from said light source to said photonic crystal column and from said photonic crystal column in reflectance or transmission mode to a light analysis means for spectrally dispersing the light after interaction of the light beam with the photonic crystal column, and detection means for detecting said dispersed light.
135. The chromatographic method according to claim 134 including moving the optical system along a length of said photonic crystal column.
136. The chromatographic method according to claim 134 wherein said changes in the photonic band structure of the photonic crystal column as a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated is flowed through said photonic crystal column and separated therein include changes in the photonic band structure upon changes in the refractive index of the mobile phase traveling through the photonic crystal column, which cause a shift in a wavelength of optical diffraction along the length of the photonic crystal that can be monitored spectroscopically.
137. The chromatographic method according to claim 136 wherein the changes in the refractive index of the mobile phase arises due to a change of the composition of the mobile phase constituents or due to the presence of dissolved chemical moieties.
138. The chromatographic method according to claim 136 wherein said photonic band structure displays a photonic band structure, which can be detected either in reflection or transmission or in combinations thereof in the ultraviolet, visible, near infrared andor infrared spectrum of electromagnetic radiation.
139. The chromatographic method according to claim 111 wherein the photonic crystal column is produced by inverting the array of packed colloidal crystal particles within an elongated housing, wherein inversion is achieved by infiltrating a material of pre-selected index of refraction and surface properties into the interconnected voids and the colloidal crystal particles are removed thereby leaving behind an array of interconnected air-voids, which in combination with the material of pre-selected index of refraction, forms a second photonic crystal column and flow passageways through said material of pre-selected index of refraction and surface properties for a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated by the second photonic crystal column.
140. The chromatographic method according to claim 139 wherein the second colloidal photonic crystal column is removed from the elongated housing to form a free-standing colloidal photonic crystal column.
141. The chromatographic method according to claim 139 wherein the second colloidal photonic crystal column includes a solid comprising a gradient of several constituents along the length of the second photonic crystal column, wherein the array of interconnected air-voids forms flow passageways through said graduated materials of pre-selected index of refraction and surface properties for a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated by the material gradient photonic crystal column.
142. The chromatographic method according to claim 141 wherein the second colloidal photonic crystal column is removed from the elongated housing to form a free-standing second colloidal photonic crystal column.
143. The chromatographic method according to claim 139 wherein the second colloidal photonic crystal column comprises a gradient of surface-modifying reagent constituents along a length of the second photonic crystal column, and wherein the array of interconnected air-voids forms flow passageways through said material of pre-selected index of refraction having the gradient of surface-modifying reagent constituents for a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated by the surface modified photonic crystal column.
144. The chromatographic method according to claim 143 wherein the second colloidal photonic crystal column is removed from the elongated housing to form a free-standing second colloidal photonic crystal column.
145. The chromatographic method according to claim 139 wherein the second colloidal photonic crystal column includes a solid comprising a gradient of several constituents along a length of the second photonic crystal column, and including a gradient of surface-modifying reagent components along the length of the second photonic crystal, and wherein the array of interconnected air-voids forms flow passageways through said material of pre-selected index of refraction and graduated surface properties for a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated by the surface gradient modified and material gradient photonic crystal column.
146. The chromatographic method according to claim 145 wherein the second colloidal photonic crystal column is removed from the elongated housing to form a free-standing second colloidal photonic crystal column.
147. The chromatographic method according to claim 139 wherein the interconnected air-voids are substantially monodisperse.
148. The chromatographic method according to claim 139 wherein the substantially monodisperse air-voids have diameters in a range from about 50 nanometers to about 3 micrometers.
149. The chromatographic method according to claim 139 wherein said material of pre-selected index of refraction is selected from the group consisting of ceramics, silica, titania, zirconia, alumina, magnesia, oxides, chalcogenides, borides, carbides, pnictides, silicides, metals, polymers, nano-crystals, composites of aforesaid materials.
150. The chromatographic method according to claim 149 wherein said polymers are selected from the group consisting of cross-linked and non-cross-linked polystyrene, polymethacrylate, polyacrylate, polyurethane, polyketone, polyether, polyvinyl, polybutadiene, inorganic polymers, metallopolymers, copolymers, grafted polymers, block-copolymers, dendrimers, biopolymers, and composites of aforesaid polymer materials.
151. The chromatographic method according to claim 139 wherein said material of pre-selected index of refraction and surface properties is porous with different pore sizes in a range from \u212bngstroms to an order of micrometers.
152. The chromatographic method according to claim 139 wherein said material of pre-selected index of refraction is porous having ordered monodisperse pores with pore sizes in a range from \u212bngstroms to an order of micrometers.
153. The chromatographic method according to claim 139 wherein said material of pre-selected index of refraction is a solid or gel.
154. The chromatographic method according to claim 139 wherein an interior surface of said material of pre-selected index of refraction, in which the air-voids are embedded, is modified by one of plasma treatment in the presence of reactive or non-reactive gases, by chemical agents including physically or chemically surface-immobilizing said agents selected from the group consisting of etching agents, hydrophobic agents, charge-altering and carrying agents, functional group carrying agents, surface-active molecules, biomolecular agents, nanoclusters and polyelectrolytes.
155. The chromatographic method according to claim 139 wherein the colloidal photonic crystal column has a length in a range from micrometers to meters.
156. The chromatographic method according to claim 139 wherein the elongated housing is made of a material which is optically transparent or partially transparent material in the ultra-violet, visible, near infrared and infrared spectral regions.
157. The chromatographic method according to claim 156 wherein the elongated housing is rigid or flexible.
158. The chromatographic method according to claim 156 wherein the elongated housing has an inner cross-section which is one of square, rectangular, triangular, hexagonal, elliptical and circular, and wherein the inner cross-section has dimensions in a range from about 10 micrometers to several centimeters.
159. The chromatographic method according to claim 156 wherein the elongated housing is porous.
160. The chromatographic method according to claim 159 wherein said porous elongated housing has pores with different pore sizes in a range from \u212bngstroms to an order of micrometers.
161. The chromatographic method according to claim 159 wherein said porous elongated housing has ordered monodisperse pores with pore sizes in a range from \u212bngstroms to an order of micrometers.
162. The chromatographic method according to claim 156 wherein the elongated housing includes chemical surface patterns on the interior surface of the elongated housing.
163. The chromatographic method according to claim 156 wherein the elongated housing includes relief surface patterns on the interior surface of the elongated housing.
164. The chromatographic method according to claim 156 wherein the elongated housing is made of a material selected from the group consisting of polymers, oxides, chalcogenides, glasses, metals and semiconductors, combinations and composites of aforesaid materials.
165. The chromatographic method according to claim 139 wherein the step of spectroscopically monitoring for changes in the photonic band structure of the photonic crystal column includes coupling an optical system to said photonic crystal column for monitoring changes in the photonic band structure of the photonic crystal column, wherein said optical system includes a light source, directing and focusing optics for guiding a beam of light from said light source to said photonic crystal column and from said photonic crystal column in reflectance or transmission mode to a light analysis means for spectrally dispersing the light after interaction of the light beam with the photonic crystal column, and detection means for detecting said dispersed light.
166. The chromatographic method according to claim 139 including moving the optical system along a length of said photonic crystal column.
167. The chromatographic separation medium according to claim 139 wherein said changes in the photonic band structure of the photonic crystal column as a liquid, gaseous, critical, or supercritical mobile phase containing materials to be separated is flowed through said photonic crystal column and separated therein include changes in the photonic band structure upon changes in the refractive index of the mobile phase traveling through the photonic crystal column, which cause a shift in a wavelength of optical diffraction along the length of the photonic crystal that can be monitored spectroscopically.
168. The chromatography apparatus according to claim 139 wherein the changes in the refractive index of the mobile phase arises due to a change of the composition of the mobile phase constituents or due to the presence of dissolved chemical moieties.
169. The chromatography apparatus according to claim 139 wherein said photonic band structure displays a photonic band structure, which can be detected either in reflection or transmission or in combinations thereof in the ultraviolet, visible, near infrared andor infrared spectrum of electromagnetic radiation.