1. A semiconductor apparatus comprising:
a substrate of single crystal silicon;
a first device formed in a first region of a surface of the substrate;
a first interlayer insulating film formed on the substrate;
a polycrystalline silicon layer formed in a second region on the first interlayer insulating film;
a second device formed in the polycrystalline silicon layer;
a second interlayer insulating film formed on the first interlayer insulating film, the second interlayer insulating film covering the polycrystalline silicon layer; and
a pad formed in a third region on the second interlayer insulating film,
the second region including at least part of a directly overlying zone of the first region, and the third region including at least part of a region which is the directly overlying zone of the first region and a directly overlying zone of the second region.
2. The semiconductor apparatus according to claim 1, wherein the first device is a functional device constituting a semiconductor circuit.
3. The semiconductor apparatus according to claim 1, wherein the second device is an electrostatic voltage withstanding protective device for protecting the first device.
4. The semiconductor apparatus according to claim 1, wherein the second device is a diode, a transistor, or a resistor.
5. The semiconductor apparatus according to claim 1, wherein the polycrystalline silicon layer is formed by chemical vapor deposition.
6. A semiconductor apparatus comprising:
a substrate of single crystal silicon;
a first device formed in a first region of a surface of the substrate;
an interlayer insulating film formed on the substrate;
a polycrystalline silicon layer formed in a second region on the interlayer insulating film; and
a second device formed in the polycrystalline silicon layer,
the second region including at least part of a directly overlying zone of the first region.
7. The semiconductor apparatus according to claim 6, wherein the first device is a functional device constituting a semiconductor circuit.
8. The semiconductor apparatus according to claim 6, wherein the second device is an electrostatic voltage withstanding protective device for protecting the first device.
9. The semiconductor apparatus according to claim 6, wherein the second device is one of a diode, a transistor and a resistor.
10. The semiconductor apparatus according to claim 6,
wherein the second device is a diode, and
the polycrystalline silicon layer has
a P-type portion and
an N-type portion being in contact with the P-type portion.
11. The semiconductor apparatus according to claim 10, wherein both the P-type portion and the N-type portion are formed across a thickness of the polycrystalline silicon layer.
12. The semiconductor apparatus according to claim 10, wherein the N-type portion is formed in the P-type portion and is exposed to an upper surface of the polycrystalline silicon layer.
13. The semiconductor apparatus according to claim 10, wherein the P-type portion is formed in the N-type portion and is exposed to an upper surface of the polycrystalline silicon layer.
14. The semiconductor apparatus according to claim 9, wherein the second device is one of a PNP-type transistor and a NPN-type transistor.
15. The semiconductor apparatus according to claim 6, wherein the polycrystalline silicon layer is formed by chemical vapor deposition.
16. The semiconductor apparatus according to claim 6, wherein the polycrystalline silicon layer is formed by depositing by chemical vapor deposition, by planarizing an upper surface thereof by chemical mechanical polishing, and by patterning by photolithography.
17. A semiconductor apparatus comprising:
a substrate of semiconductor material;
a first device formed in a first region of a surface of the substrate;
an interlayer insulating film formed on the substrate;
a semiconductor layer formed in a second region on the interlayer insulating film; and
a second device formed in the semiconductor layer,
the second region including at least part of a directly overlying zone of the first region.
18. The semiconductor apparatus according to claim 17, further comprising other interlayer insulating film formed on the interlayer insulating film, the other interlayer insulating film covering the semiconductor layer, and a pad formed in a third region on the other interlayer insulating film,
the third region including at least part of a region which is the directly overlying zone of the first region and a directly overlying zone of the second region.
19. The semiconductor apparatus according to claim 17, wherein the first device is a functional device constituting a semiconductor circuit.
20. The semiconductor apparatus according to claim 17, wherein the second device is an electrostatic voltage withstanding protective device for protecting the first device.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A camera module comprising:
a lens barrel including at least one lens disposed along an optical axis;
a housing in which the lens barrel is disposed; and
an infra-red (IR) filter adhesively bonded to an inner surface of the housing and disposed below the lens barrel,
wherein protective tape is adhered to a contact surface of the IR filter in contact with the inner surface of the housing and a portion of a remaining surface, except for the contact surface of the IR filter.
2. The camera module of claim 1, wherein the inner surface of the housing is provided with a protrusion part protruding inwardly in a horizontal direction, and the IR filter is adhered to the protrusion part.
3. The camera module of claim 2, wherein the protective tape is continuously adhered to the contact surface of the IR filter and a lower surface of the IR filter adjacent to the contact surface.
4. The camera module of claim 1, wherein the protective tape is adhered to the contact surface of the IR filter and a portion of a lower surface of the IR filter.
5. The camera module of claim 4, wherein the protective tape is adhered along an edge of the lower surface of the IR filter.
6. The camera module of claim 1, wherein the IR filter is adhered to the housing via a UV adhesive.
7. The camera module of claim 1, wherein the protective film is adhered so as to entirely enclose an outer side end of the IR filter.
8. A camera module, comprising:
a lens barrel including at least one lens disposed along an optical axis;
a housing in which the lens barrel is disposed; and
an infra-red (IR) filter adhesively bonded to an inner surface of the housing and disposed below the lens barrel,
wherein protective tape is adhered to a contact surface of the IR filter in contact with the inner surface of the housing,
wherein the inner surface of the housing is provided with a protrusion part protruding inwardly in a horizontal direction, and the IR filter is adhered to the protrusion part,
wherein the protective tape is continuously adhered to the contact surface of the IR filter and a lower surface of the IR filter adjacent to the contact surface, and
wherein the protective tape adhered to the lower surface of the IR filter is formed so as to protrude further inwardly in the horizontal direction than the protrusion part.