1. An apparatus for treating and preparing food, the apparatus comprising:
a cooking chamber having four sides and an atmosphere wherein the food is treated and cooked;
a motor-driven ventilation fan which serves to circulate the atmosphere prevailing in the cooking chamber;
a gas burner which serves to burn a gas-air mixture, and;
a heat exchange device in gaseous flow communication with respect to the gas burner, the heat exchange device having a heat exchange pipe assembly that has at least two pipe strands, wherein the heat exchange pipe assembly extends substantially around the ventilation fan in a continuous loop.
2. The apparatus of claim 1 wherein the heat exchange pipe assembly has three pipe strands.
3. The apparatus of claim 2 wherein the three pipe strands are arranged triangularly in the longitudinal direction of the pipe strands.
4. The apparatus of claim 1 wherein the pipe strands extend substantially along all four sides of the cooking chamber but not along the burner.
5. The apparatus of claim 1 wherein at least one flow deflector is mounted within at least one pipe strand.
6. The apparatus of claim 5 wherein two flow deflectors are mounted within each pipe strand separated by a distance.
7. The apparatus of claim 1 wherein the gas burner has a combustion chamber oriented substantially vertical.
8. The apparatus of claim 7 wherein a flame is formed within the combustion chamber, the flame being directed substantially downward.
9. A heat exchange device for an apparatus of the type for treating and preparing food and having a cooking chamber, ventilation fan and gas burner, the device comprising a heat exchange pipe assembly having at least two pipe strands, wherein the heat exchange pipe assembly extends substantially around the ventilation fan in a continuous loop.
10. The device of claim 9 wherein the heat exchange pipe assembly has three pipe strands, the pipe strands extending parallel to each other and extending continuously around the ventilation wheel but not along the burner.
11. The device of claim 9 wherein at least one flow deflector is mounted within at least one pipe strand.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A source collector module for fabricating a semiconductor wafer, said source collector module comprising:
a light source capable of providing light to a collector optics in said source collector module;
a debris mitigation filter comprising an aerogel film positioned adjacent to said collector optics;
said debris mitigation filter configured to be substantially transmissive of light produced by said light source.
2. A semiconductor die diced from said semiconductor wafer fabricated by the source collector module of claim 1.
3. The semiconductor die of claim 2, where said semiconductor die is utilized in a circuit board.
4. The source collector module of claim 1 wherein said light source comprises a discharge-produced plasma (DPP) source.
5. The source collector module of claim 1 wherein said light source comprises a laser-produced plasma (LPP) source.
6. The source collector module of claim 1 wherein said aerogel film is selected from the group consisting of a silicon aerogel, a silica aerogel, and a metal foam.
7. An extreme ultraviolet (EUV) debris mitigation filter for use in an EUV source collector module to fabricate a semiconductor wafer, said EUV debris mitigation filter comprising:
an aerogel film capable of being situated between a debris mitigation module and a collector optics of said EUV source collector module;
said aerogel film being capable of protecting said collector optics from contamination by debris passing through said debris mitigation module;
said EUV debris mitigation filter configured to be substantially transmissive of EUV light.
8. The EUV debris mitigation filter of claim 7 wherein said aerogel film comprises a silicon aerogel.
9. The EUV debris mitigation filter of claim 7 wherein said aerogel film comprises a silica aerogel.
10. The EUV debris mitigation filter of claim 7 wherein said aerogel film comprises a metal foam.
11. The EUV debris mitigation filter of claim 7 wherein said aerogel film has a thickness of from approximately 1.0 micrometer to approximately 20.0 micrometers.
12. A method for fabricating a semiconductor wafer using extreme ultraviolet (EUV) lithography, said method comprising:
placing an EUV debris mitigation filter between a (Debris mitigation module and a collector optics, said EUV debris mitigation filter comprising an aerogel film and being substantially transmissive of EUV light;
shining EUV light through said debris mitigation module and debris mitigation filter onto said collector optics module to create a pattern for fabrication of said semiconductor wafer.
13. The method of claim 12 further comprising dicing said semiconductor wafer into a plurality of semiconductor dies.
14. The method of claim 13 further comprising utilizing one or more of said plurality of semiconductor dies in a circuit board.
15. The method of claim 13 further comprising packaging one or more of said plurality of semiconductor dies.
16. The method of claim 13, wherein at least one of said plurality of semiconductor dies is utilized in a circuit board as a part of an electronic system, said electronic system being selected from the group consisting of a wired communications device, a wireless communications device, a cell phone, a switching device, a router, a repeater, a codec, a LAN, a WLAN, a Bluetooth enabled device, a digital camera, a digital audio player andor recorder, a digital video player andor recorder, a computer, a monitor, a television set, a satellite set top box, a cable modem, a digital automotive control system, a digitally-controlled home appliance, a printer, a copier, a digital audio or video receiver, an RF transceiver, a personal digital assistant (PDA), a digital game playing device, a digital testing andor measuring device, a digital avionics device, a medical device, and a digitally-controlled medical equipment.
17. The method of claim 12 wherein said aerogel film comprises a silicon aerogel.
18. The method of claim 12 wherein said aerogel film comprises a silica aerogel.
19. The method of claim 12 wherein said aerogel film comprises a metal foam.
20. The method of claim 12 wherein said aerogel film has a thickness of from approximately 1.0 micrometer to approximately 20.0 micrometers.