1. A method for forming a memory storage cell in a semiconductor substrate, the method comprising:
forming a dopant source material over a lower portion of a deep trench formed in the substrate;
shaping an upper portion of the trench to a generally rectangular configuration without shaping said lower portion of the trench; and
annealing said dopant source material so as to form a buried plate of a trench capacitor;
wherein said buried plate is self aligned to said shaped upper portion of the trench.
2. The method of claim 1, wherein said shaping an upper portion of the trench is implemented through an ammonia etch, said ammonia etch having an etch rate selective to a crystal orientation of the substrate material.
3. The method of 1, wherein said dopant source material comprises arsenic doped oxide (ASG).
4. The method of claim 3, further comprising forming a cap layer over said ASG layer following said shaping an upper portion of the trench.
5. The method of claim 1, wherein said annealing said dopant source material is implemented at about 1050\xb0 C. for about 3 minutes.
6. The method of claim 1, wherein said forming a dopant source material over a lower portion of a deep trench formed in the substrate further comprises:
depositing said dopant source material over the trench sidewall and lower surfaces;
filling said trench with a photoresist material and recessing said photoresist material to a desired depth; and
etching a portion of said dopant source material on an upper part of the trench, wherein said recessed photoresist serves as an etch stop layer.
7. The method of claim 6, further comprising:
removing the remaining photoresist material from said lower portion of said deep trench;
performing a thermal annealing so as to cause said dopant source material to diffuse into the substrate; and
removing said dopant source material and a cap layer formed over said dopant source material.
8. The method of claim 7, wherein said annealing said dopant source material is implemented at about 1050\xb0 C. for about 3 minutes.
9. The method of claim 8, wherein said annealing is performed in an oxygen-containing atmosphere.
10. The method of claim 7, wherein said removing said dopant source material and said cap layer is implemented by at least one of a buffered hydrofluoric (BHF) etch and a diluted hydrofluoric (DBF) etch.
11. A method for forming vertical storage cell for a dynamic random access memory (DRAM) device, the method comprising:
forming a deep trench in a semiconductor substrate;
forming a dopant source material over a lower portion of said deep trench;
shaping an upper portion of said deep trench to a generally rectangular configuration without shaping said lower portion of the trench; and
annealing said dopant source material so as to form a buried plate of a trench capacitor;
wherein said buried plate is self aligned to said shaped upper portion of said deep trench.
12. The method of claim 11, wherein said shaping an upper portion of said deep trench is implemented through an ammonia etch, said ammonia etch having an etch rate selective to a crystal orientation of the substrate material.
13. The method of 11, wherein said dopant source material comprises arsenic doped oxide (ASG).
14. The method of 11, wherein said dopant source material comprises arsenic doped oxide (ASG).
15. The method of claim 11, wherein said annealing said dopant source material is implemented at about 1050\xb0 C. for about 3 minutes.
16. The method of claim 11, wherein said Ring a dopant source material over a lower portion of said deep trench formed in the substrate further comprises:
depositing said dopant source material over the trench sidewall and lower surfaces;
filling said deep trench with a photoresist material and recessing said photoresist material to a desired depth; and
etching a portion of said dopant source material on an upper part of said deep trench, wherein said recessed photoresist serves as an etch stop layer.
17. The method of claim 16, further comprising:
removing the remaining photoresist material from said lower portion of said deep trench;
performing a thermal annealing so as to cause said dopant source material to diffuse into the substrate; and
removing said dopant source material and a cap layer formed over said dopant source material.
18. The method of claim 17, wherein said annealing sad dopant source material is implemented at about 1050\xb0 C. for about 3 minutes.
19. The method of claim 18, wherein said annealing is performed in an oxygen-containing atmosphere.
20. The method of claim 7, wherein said removing said dopant source material and said cap layer is implemented by at least one of a buffered hydrofluoric (BHF) etch and a diluted hydrofluoric (DHF) etch.
21. A semiconductor memory storage cell, comprising:
a deep trench initially formed in a semiconductor substrate;
a buried plate region formed in a lower portion of said deep trench; and
an upper portion of said deep trench being shaped to have a generally rectangular shape following the initial formation thereof;
wherein said buried plate region is self aligned with said shaped upper portion of said deep trench.
22. The memory storage cell of claim 21, wherein said buried plate region is formed by an anneal of a dopant source material formed over said lower portion of said deep trench, wherein said dopant source material is further used to shield said lower portion of said deep trench during the shaping of said upper portion of said deep trench.
23. A buried plate region for a semiconductor memory storage capacitor, wherein said buried plate region is self aligned with respect to an upper portion of a deep trench containing said memory storage capacitor.
24. The method of claim 5, wherein said annealing is performed in an oxygen-containing atmosphere.
25. The method of claim 15, wherein said annealing is performed in an oxygen-containing atmosphere.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method enabling mobile telephones to have automatic multiple telephone number dialing capability to a same called party, said method establishing a database in a telephone directory stored in a memory of a mobile telephone and, said database being utilized to record a plurality of telephone numbers of a called party set by a user, such that when a central processing unit of said mobile telephone detects a dialing signal to said called party, said central processing unit executes the following procedures:
automatically searching said database to determine whether said called party has other telephone numbers when detecting that the line of one telephone number of said called party being dialed is busy;
listing all the other telephone numbers in said database belonging to said called party on a screen of the mobile telephone for selectable dialing,
wherein said mobile telephone further comprises a plurality of input keys utilized for configuration and inputting operations, and a transceiver circuit utilized for reception and transmission of dialing signals, and
wherein:
said memory is utilized to record information entered into said database,
said central processing unit is utilized to search data in said database and, furthermore, to execute an analysis of said data found to provide for the corresponding procedures,
said screen is utilized for displaying said data in a frame of a user-selectable dialing table comprising multiple telephone numbers and other related information,
said dialing table respectively consists of a namefull name column, a data type column, and a duration column,
each group of a plurality of said called parties is arranged in consecutive order, and
said plurality of telephone numbers of each said called party is in a sequence determined by the user, with said telephone numbers including at least one home telephone number, company telephone number, or mobile telephone number.
2. A method enabling mobile telephones to have automatic multiple telephone number dialing capability to a same called party as claimed in claim 1, in which when said central processing unit of said mobile detects a dialing signal, said procedures further comprise:
transmitting the telephone number of a called party dialed by the user as a signal from said transceiver circuit;
automatically searching said database to determine whether said called party has other telephone numbers and listing all other telephone numbers belonging to said called party on said screen for user-selectable dialing when detecting that the line of the telephone number being dialed is busy,
based on said memory settings, determining whether said other telephone numbers are configured for manual user-selectable dialing, and transmitting one of said other telephone numbers selected by the user through pressing said input keys as a signal from said transceiver circuit;
repeating said procedures when a busy line is detected after dialing until a successful connection is achieved; otherwise, indicating a successful dial-up connection.
3. A method enabling mobile telephones to have automatic multiple telephone number dialing capability to a same called party as claimed in claim 2, in which when a busy line occurs after dialing, said central processing unit executes the procedure of automatically searching said database to determine whether said called party has said other telephone numbers; if there is no other telephone number, then re-dialing the same telephone number repeatedly to increase answering probability until the call is answered.
4. A method enabling mobile telephones to have automatic multiple telephone number dialing capability to a same called party as claimed in claim 2, in which upon determining, based on said memory settings, that said other telephone numbers were previously configured for automatic dialing, said central processing unit executes the procedures of automatically dialing said other telephone numbers sequentially, and transmitting said other telephone number being dialed as a signal from said transceiver circuit until a successful dial-up connection is achieved.