What is claimed is:
1. A method of fabricating a semiconductor structure comprising the steps of:
providing a silicon substrate having a surface;
forming by atomic layer deposition a seed layer on the surface of the silicon substrate; and
forming by atomic layer deposition one or more layers of a high dielectric constant oxide on the seed layer.
2. A method of fabricating a semiconductor structure as claimed in claim 1 wherein the step of providing a substrate includes the step of providing a substrate having formed thereon a silicon oxide.
3. A method of fabricating a semiconductor structure as claimed in claim 2 wherein the step of forming by atomic layer deposition a seed layer further includes the step of depositing a layer of a metal oxide onto a surface of the silicon oxide, flushing the layer of metal oxide with an inert gas, and reacting the metal oxide and the silicon oxide to form a silicate.
4. A method of fabricating a semiconductor structure as claimed in claim 1 wherein the step of providing a substrate includes providing a substrate having a layer of hydrogen formed thereon by hydrogen passivation.
5. A method of fabricating a semiconductor structure as claimed in claim 4 wherein the step of forming by atomic layer deposition a seed layer further includes the step of desorbing the layer of hydrogen formed on the substrate, exposing the silicon substrate to a silicon precursor and at least one metal precursor forming a layer of a silicon and a metal on the surface of the silicon substrate, flushing the layer of silicon with an inert gas to remove any excess silicon and metal precursor material, exposing the surface of the layer of silicon to at least one of oxygen (O2) with or without plasma, water (H2O), nitrous oxide (N2O), or nitric oxide (NO) to oxidize the layer of silicon and metal thereby forming a single oxidized monolayer, and flushing the oxidized monolayer with an inert gas.
6. A method of fabricating a semiconductor structure as claimed in claim 5 further including the step of repeating the atomic layer deposition to form monolayers.
7. A method of fabricating a semiconductor structure as claimed in claim 1 whereby the step of forming by atomic layer deposition one or more layers of a high dielectric constant oxide includes the steps of exposing the seed layer to a metal precursor, thereby forming a layer of metal, flushing the layer of metal with an inert gas, exposing the layer of metal to at least one of oxygen (O) with or without plasma, water (H2O), nitrous oxide (N2O), or nitric oxide (NO) to oxidize the layer of metal thereby forming a single high-k oxidized monolayer, and flushing the oxidized monolayer with an inert gas.
8. A method of fabricating a semiconductor structure as claimed in claim 7 further including the step of repeating the atomic layer deposition to form high-k oxide layer of a desired thickness.
9. A method of fabricating a semiconductor structure comprising the steps of:
providing a silicon substrate having a surface;
forming by atomic layer deposition a seed layer on the surface of the silicon substrate, the seed layer formed of a silicate material; and
forming by atomic layer deposition one or more layers of a high dielectric constant oxide on the seed layer.
10. A method of fabricating a semiconductor structure as claimed in claim 9 wherein the step of forming by atomic layer deposition the seed layer of a silicate material includes forming the seed layer of a silicate material selected from the group of strontium silicon oxide (SrSiO4), zirconium silicon oxide (ZrSiO4), and hafnium silicon oxide (HfSiO4).
11. A method of fabricating a semiconductor structure as claimed in claim 10 wherein the step of forming by atomic layer deposition one or more layers of a high dielectric constant oxide on the seed layer includes forming the layer of high dielectric constant oxide selected from the group of hafnium oxide (HfO2), zirconium oxide (ZrO2), strontium titanate (SrTiO3), lanthanum oxide (La2O3), yttrium oxide (Y2O3), titanium oxide (TiO2), barium titanate (BaTiO3), lanthanum aluminate (LaAlO3), lanthanum scandium oxide (LaScO3) and aluminum oxide (Al2O3).
12. A method of fabricating a semiconductor structure as claimed in claim 11 wherein the step of providing a substrate includes the step of providing a substrate having formed thereon a silicon oxide.
13. A method of fabricating a semiconductor structure as claimed in claim 12 wherein the step of forming by atomic layer deposition a seed layer further includes the step of depositing a layer of a metal oxide onto a surface of the silicon oxide, flushing the layer of metal oxide with an inert gas, reacting the metal oxide with the silicon oxide to form the silicate selected from the group of strontium silicon oxide (SrSiO4), zirconium silicon oxide (ZrSiO4), and hafnium silicon oxide (HfSiO4).
14. A method of fabricating a semiconductor structure as claimed in claim 11 wherein the step of providing a substrate includes providing a substrate having a layer of hydrogen formed thereon by hydrogen passivation.
15. A method of fabricating a semiconductor structure as claimed in claim 14 wherein the step of forming by atomic layer deposition a seed layer further includes the step of desorbing the layer of hydrogen formed on the substrate, exposing the silicon substrate to a silicon precursor and at least one metal precursor forming a layer of a silicon and a metal on the surface of the silicon substrate, flushing the layer of silicon with an inert gas to remove any excess silicon and metal precursor material, exposing the surface of the layer of silicon to at least one of oxygen (O2) with or without plasma, water (H2O), nitrous oxide (N2O), or nitric oxide (NO) to oxidize the layer of silicon and metal thereby forming a single oxidized monolayer, and flushing the oxidized monolayer with an inert gas.
16. A method of fabricating a semiconductor structure as claimed in claim 15 further including the step of repeating the atomic layer deposition to form oxidized monolayers.
17. A method of fabricating a semiconductor structure as claimed in claim 11 whereby the step of forming by atomic layer deposition one or more layers of a high dielectric constant oxide includes the steps of exposing the seed layer to a metal precursor, thereby forming a layer of metal, flushing the layer of metal with an inert gas, exposing the layer of metal to at least one of oxygen (O) with or without plasma, water (H2O), nitrous oxide (N2O), or nitric oxide (NO) to oxidize the layer of metal thereby forming a single high-k oxidized monolayer, and flushing the oxidized monolayer with an inert gas.
18. A method of fabricating a semiconductor structure as claimed in claim 17 further including the step of repeating the atomic layer deposition to form high-k oxide of a desired thickness.
19. A method of fabricating a semiconductor structure comprising the steps of:
providing a silicon substrate having a surface;
forming by atomic layer deposition a seed layer on the surface of the silicon substrate, the seed layer formed of a silicate material selected from the group of strontium silicon oxide (SrSiO4), zirconium silicon oxide (ZrSiO4), and hafnium silicon oxide (HfSiO4); and
forming by atomic layer deposition one or more layers of a high dielectric constant oxide on the seed layer, the layer of high dielectric constant oxide selected from the group of hafnium oxide (HfO2), zirconium oxide (ZrO2), strontium titanate (SrTiO3), lanthanum oxide (La2O3), yttrium oxide (Y2O3), titanium oxide (TiO2), barium titanate (BaTiO3), lanthanum aluminate (LaAlO3), lanthanum scandium oxide (LaScO3) and aluminum oxide (Al2O3).
20. A method of fabricating a semiconductor structure as claimed in claim 19 wherein the step of providing a silicon substrate having a surface includes the step of providing one of a silicon substrate having formed thereon the surface a layer of silicon oxide or a layer of hydrogen formed by hydrogen passivation.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for an adaptation of a stop of an electrically triggered actuator, comprising:
performing a check as to whether a setpoint value for a position of the actuator to be set corresponds to a stop of the actuator; and
if it is determined in the performing the check step that the setpoint value corresponds to the stop of the actuator;
comparing a characteristic variable of a trigger signal for triggering the actuator with a predefined value, the characteristic variable implementing the setpoint value; and
if a particular result of the comparing step is obtained, modifying a learning value for a position of the stop of the actuator, the learning value for the position of the stop otherwise being maintained without change on account of the comparing step.
2. The method as recited in claim 1, wherein for adapting the position of the stop of the actuator, a condition for comparing the characteristic variable of the trigger signal with the predefined value must be fulfilled at least for a predefined time period.
3. The method as recited in claim 1 wherein:
the performing the check step includes comparing the setpoint value with a threshold value near the stop;
if the setpoint value is determined to lie between the threshold value and the stop, the setpoint value for the position of the actuator to be set is determined to correspond to the stop of the actuator; and otherwise
the setpoint value for the position of the actuator to be set is determined not to correspond to the stop of the actuator.
4. The method as recited in claim 3, further comprising:
predetermining a first threshold value for an adaptation of the stop for raising of the position of the stop; and
predefining a second threshold value for an adaptation of the stop for a lowering of the position of the stop.
5. The method as recited in claim 4, wherein the first threshold value is greater than the second threshold value.
6. The method as recited in claim 1, wherein the modification of the learning value of the position of the stop of the actuator is restricted.
7. A method for an adaptation of a stop of an electrically triggered actuator, comprising:
performing a check as to whether a setpoint value for a position of the actuator to be set corresponds to a stop of the actuator;
comparing a characteristic variable of a trigger signal for triggering the actuator with a predefined value, the characteristic variable implementing the setpoint value; and
adapting a position of the stop of the actuator depending on a result to the comparing step;
wherein a pulse control factor is the characteristic variable of the trigger signal.
8. A method for an adaptation of a stop of an electrically triggered actuator, comprising:
performing a check as to whether a setpoint value for a position of the actuator to be set corresponds to a stop of the actuator;
comparing a characteristic variable of a trigger signal for triggering the actuator with a predefined value, the characteristic variable implementing the setpoint value;
adapting a position of the stop of the actuator depending on a result to the comparing step; and
changing a learning value for the position of the stop if the characteristic variable of the trigger signal exceeds the predefined value for at least a predetermined time period, the learning value otherwise being maintained without change on account of how the characteristic variable of the trigger signal compares with the predefined value.
9. The method as recited in claim 8, wherein the learning value for the position of the stop is raised if the characteristic variable of the trigger signal exceeds, for at least a first predefined period, a first predefined value in a first direction.
10. The method as recited in claim 9, wherein the learning value for the position of the stop is lowered if the characteristic variable of the trigger signal exceeds, for at least a second predefined time period, a second predefined value in a second direction.
11. The method as recited in claim 10, wherein the first predefined value is greater than the second predefined value.
12. A device for the adaptation of a stop of an electrically triggered actuator, comprising:
a testing arrangement configured to check whether a setpoint value for a position of the actuator to be set corresponds to a stop of the actuator;
a comparator configured to, if it is determined in the check that the setpoint value corresponds to the stop of the actuator, compare a characteristic variable of a trigger signal for triggering the actuator with a predefined value, the characteristic variable implementing the setpoint value; and
an adapter configured to, if a particular result of the comparison is obtained, modify a learning value for a position of the stop of the actuator, the learning value for the position of the stop otherwise being maintained without change on account of the comparison.
13. A method for an adaptation of a stop of an electrically triggered actuator, comprising:
performing a check as to whether a setpoint value for a position of the actuator to be set corresponds to a stop of the actuator; and
if it is determined in the performing the check step that the setpoint value corresponds to the stop of the actuator:
comparing a characteristic variable of a trigger signal for triggering the actuator with a predefined value, the characteristic variable implementing the setpoint value; and
if that the characteristic variable of the trigger signal exceeds the predefined value for at least a predetermined time period is determined in the comparing step, changing a learning value for a position of the stop of the actuator, the learning value otherwise being maintained without change on account of the comparing step.
14. The method as recited in claim 13, wherein the learning value for the position of the stop is raised if the characteristic variable of the trigger signal exceeds, for at least a first predefined period, a first predefined value in a first direction.
15. The method as recited in claim 14, wherein the learning value for the position of the stop is lowered if the characteristic variable of the trigger signal exceeds, for at least a second predefined time period, a second predefined value in a second direction.
16. The method as recited in claim 15, wherein the first predefined value is greater than the second predefined value.
17. A method for an adaptation of a stop of an electrically triggered actuator, comprising:
performing a check as to whether a setpoint value for a position of the actuator to be set corresponds to a stop of the actuator; and
if it is determined in the performing the check step that the setpoint value corresponds to the stop of the actuator:
comparing a characteristic variable of a trigger signal for triggering the actuator with a predefined value, the characteristic variable implementing the setpoint value; and
if a particular result of the comparing step is obtained, modifying a learning value for a position of the stop of the actuator, the learning value for the position of the stop otherwise being maintained without change on account of the comparing step;
wherein a pulse control factor is the characteristic variable of the trigger signal.