1. An organic light emitting diode display, comprising:
a substrate main body;
a semiconductor layer and a first capacitor electrode on the substrate main body, bottom surfaces of the semiconductor layer and first capacitor electrode being substantially coplanar, and each of the semiconductor layer and first capacitor electrode including an impurity-doped polysilicon layer;
a gate insulating layer on the semiconductor layer and the first capacitor electrode;
a gate electrode on the semiconductor layer with the gate insulating layer therebetween; and
a second capacitor electrode on the first capacitor electrode with the gate insulating layer therebetween, the second capacitor electrode including a convex electrode portion and a concave electrode portion, the concave electrode portion being thinner than each of the convex electrode portion and the gate electrode.
2. The organic light emitting diode display as claimed in claim 1, wherein the gate electrode and the second capacitor electrode include a same metal, the metal including at least one of molybdenum (Mo), chromium (Cr), and tungsten (W).
3. The organic light emitting diode display as claimed in claim 2, wherein:
the gate electrode has a thickness of about 170 nm or more, and
the concave electrode portion of the second capacitor electrode has a thickness of about 75% or less of the thickness of the gate electrode.
4. The organic light emitting diode display as claimed in claim 3, wherein the convex electrode portion of the second capacitor electrode has the same thickness as the gate electrode.
5. The organic light emitting diode display as claimed in claim 1, wherein the first capacitor electrode includes an implantation region overlapping the concave electrode portion of the second capacitor electrode and an expanded implantation region adjacent to the implantation region, the expanded implantation region extending laterally from the implantation region.
6. The organic light emitting diode display as claimed in claim 5, wherein the convex electrode portion of the second capacitor electrode has a width that is smaller than or equal to twice a width of the expanded implantation region, the width of the expanded implantation region extending from the implantation region in a direction parallel to the first capacitor electrode.
7. The organic light emitting diode display as claimed in claim 6, wherein the concave electrode portion of the second capacitor electrode has a thickness within a range of about 10 nm to about 140 nm.
8. The organic light emitting diode display as claimed in claim 1, wherein the concave electrode portion and the convex electrode portion of the second capacitor electrode are arranged in a stripe pattern or a lattice pattern.
9. The organic light emitting diode display as claimed in claim 1, wherein the concave electrode portion and the convex electrode portion of the second capacitor electrode are arranged alternately to overlap an entire length of the first capacitor electrode.
10. The organic light emitting diode display as claimed in claim 1, wherein a width of the concave electrode portion is equal to or larger than a width of the convex electrode portion.
11. A method for manufacturing an organic light emitting diode display, comprising:
forming a polysilicon layer on a substrate main body;
forming a semiconductor layer intermediate and a first capacitor electrode intermediate by patterning the polysilicon layer;
forming a gate insulating layer on the semiconductor layer intermediate and the first capacitor electrode intermediate;
forming a gate electrode on the semiconductor layer intermediate with the gate insulating layer therebetween; and
forming a second capacitor electrode on the first capacitor electrode intermediate with the gate insulating layer therebetween, such that the second capacitor electrode includes a convex electrode portion and a concave electrode portion, the concave electrode portion being thinner than each of the convex electrode portion and the second capacitor electrode; and
doping an impurity into the semiconductor layer intermediate and the first capacitor electrode intermediate to form a semiconductor layer and a first capacitor electrode, respectively, such that the impurity is transmitted through the second capacitor electrode and is doped into the first capacitor electrode.
12. The method as claimed in claim 11, wherein forming the gate electrode and the second capacitor electrode includes using a same metal, the metal including at least one of molybdenum (Mo), chromium (Cr), and tungsten (W).
13. The method as claimed in claim 12, wherein:
forming the gate electrode includes forming the gate electrode to have a thickness of at least 170 nm, and
forming the second capacitor electrode includes forming the concave electrode portion to have a thickness that is about 75% or less of the thickness of the gate electrode.
14. The method as claimed in claim 13, wherein forming the second capacitor electrode includes forming the convex electrode portion to have the same thickness as the gate electrode.
15. The method as claimed in claim 11, wherein doping the impurity into the first capacitor electrode intermediate includes forming an implantation region overlapping the concave electrode portion of the second capacitor electrode and an expanded implantation region adjacent to the implantation region, such that the expanded implantation region extends laterally from the implantation region.
16. The method as claimed in claim 15, wherein doping the impurity into the first capacitor electrode intermediate further comprises defining a width of the convex electrode portion of the second capacitor electrode to be smaller than or equal to twice a width of the expanded implantation region, the width of the expanded implantation region extending from the implantation region in a direction parallel to the first capacitor electrode.
17. The method as claimed in claim 11, wherein doping the impurity includes using ion implantation with energy of about 30 keV or greater and a dose amount of about 1.0e12 atomscm2 or greater.
18. The method as claimed in claim 11, wherein:
forming the gate electrode and the second capacitor electrode includes forming a gate metal layer on the gate insulating layer, and patterning the gate metal layer through a photolithography process using a photosensitive layer pattern,
the photosensitive layer pattern includes a first part provided on the gate electrode and a second part provided on the second capacitor electrode, and
the second part of the photosensitive layer is divided into a convex part having a same thickness as the first part and a concave part that is thinner than the convex part.
19. The method as claimed in claim 18, wherein forming the gate electrode and the first capacitor electrode intermediate includes etching the gate metal layer through the photosensitive layer pattern, such that the concave part of the second part of the photosensitive layer pattern is eliminated, and the first capacitor electrode intermediate is partially etched to form the capacitor electrode.
20. The method as claimed in claim 18, wherein the photosensitive layer pattern is formed by using halftone exposure or dual exposure.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process for continuous production of cumene hydroperoxide comprising liquid phase oxidation of cumene in a reactor in the presence of an oxygen-containing gas under such conditions that an oxygen content of the total oxygen-containing gas volume fed into the liquid phase in the reactor is adjusted to not less than 22 mol % and not more than 50 mol %, and the cumene hydroperoxide production per unit volume of the reaction fluid in the reactor is not less than 22 kgm3hr.
2. A process according to claim 1, wherein the gas fed into the liquid phase in the reactor is a mixture of two or more gases.
3. A process according to claim 1, wherein the gas fed into the liquid phase in the reactor is an oxygen enriched air which is a mixture of air with oxygen.
4. A process according to claim 1, wherein an oxygen content of a spent gas of the reactor is not less than 2 mol % and not more than 10 mol %.
5. A process according to claim 1, wherein the oxygen-containing gas is fed into the reactor using a sparger whose aperture pitch is at least twice the aperture diameter.
6. A process for continuous production of cumene hydroperoxide comprising liquid phase oxidation of cumene in a reactor in the presence of an oxygen-containing gas under such conditions that an oxygen content of the total oxygen-containing gas volume fed into the liquid phase in the reactor is adjusted to not less than 22 mol % and not more than 50 mol %, and an oxygen content of a spent gas of the reactor is not less than 2 mol % and not more than 10 mol %.
7. A process according to claim 6, wherein the gas fed into the liquid phase in the reactor is a mixture of two or more gases.
8. A process according to claim 6, wherein the gas fed into the liquid phase in the reactor is an oxygen enriched air which is a mixture of air with oxygen.
9. A process according to claim 6, wherein the oxygen-containing gas is fed into the reactor using a sparger whose aperture pitch is at least twice the aperture diameter.
10. A process for continuous production of cumene hydroperoxide comprising liquid phase oxidation in a reactor in the presence of an oxygen-containing gas under such conditions that an oxygen content of the total oxygen-containing gas volume fed into the liquid phase in the reactor is adjusted to not less than 22 mol % and not more than 50 mol %, and said oxygen-containing gas is fed into the reactor using a sparger whose aperture pitch is at least twice the aperture diameter.
11. A process according to claim 10, wherein the gas fed into the liquid phase in the reactor is a mixture of two or more gases.
12. A process according to claim 10, wherein the gas fed into the liquid phase in the reactor is an oxygen enriched air which is a mixture of air with oxygen.
13. A process for production of phenol comprising acid decomposition of cumene hydroperoxide obtained claim 1.