1-65. (canceled)
66. A system for rendering one or more captured audio soundfields to a listener, the one or more captured audio soundfields comprising audio from one or more audio sources, the system comprising:
apparatus for delivering the one or more captured audio soundfields to a listener with a first audio element perceived by the listener as emanating from a first virtual source location and with a second audio element perceived by the listener as emanating from a second virtual source location,
the first virtual source location and the second virtual source location being perceived by the listener as being located to the front of the listener.
67. A system as claimed in claim 66 wherein the system comprises apparatus to capture one or more audio soundfields.
68. A system as claimed in claim 67 wherein the apparatus to capture one or more audio soundfields comprises one or more soundfield microphones.
69. A system as claimed in claim 66 wherein the system comprises apparatus to transmit one or more captured audio soundfields to a listener.
70. A system as claimed in claim 66 wherein the apparatus for delivering the one or more captured audio soundfields to a listener comprises a set of headphones.
71. A computer implemented system as claimed in claim 66.
72. A system for rendering one or more captured audio soundfields to a listener substantially as hereinbefore described with reference to the accompanying drawings.
73-76. (canceled)
77. A method of rendering at least one soundfield to a listener via binaural headphones, wherein the at least one soundfield includes sound information and spatial location information related to at least one sound source, the method comprising:
generating a number of virtual speaker feeds from each soundfield;
transforming the number of virtual speaker feeds into binaural headphone feeds;
rendering the at least one soundfield to the listener by feeding the binaural headphone feeds to the headphones, wherein the binaural headphone feeds are configured to have the listener perceive each soundfield as originating from a region exclusively in front of the listener.
78. The method according to claim 77, wherein at least two soundfields are rendered to the listener via said binaural headphone feeds, wherein said binaural headphone feeds are further configured to have the at least two soundfields perceived by the listener as originating from different regions, the different regions located exclusively in front of the listener.
79. The method according to claim 78, wherein the different regions are disjunct or partially overlapping.
80. The method according to claim 77, wherein the at least one soundfield is an isotropic soundfield including said sound information and spatial location information.
81. The method according to claim 80, wherein at least two soundfields are rendered to the listener via said binaural headphone feeds, and wherein all of the soundfields are isotropic soundfields.
82. The method according to claim 77, wherein said number of virtual speaker feeds includes N virtual speaker feeds configured for playback over N speakers arranged around the listener in a horizontal plane, and
transforming the N virtual speaker feeds into the binaural headphone feeds includes transforming the N virtual speaker feeds into an array of virtual speakers feeds configured for playback over an array of virtual speakers arranged in a vertical plane located in front of the listener.
83. The method according to claim 82, wherein the N virtual speakers are arranged at the circumference of a circle surrounding the listener, and the array of virtual speakers is arranged at the circumference of a circle located in the vertical plane.
84. The method according to claim 82, wherein the array of virtual speaker feeds includes N virtual speaker feeds and the array of virtual speakers includes N virtual speakers.
85. The method according to claim 77, wherein transforming the number of virtual speaker feeds into the binaural headphone feeds includes applying Head-Related Transfer Functions (HRTF) to the number of virtual speaker feeds.
86. The method according to claim 85, wherein said Head-Related Transfer Functions are adapted to obtain said perceived origin of each rendered soundfield being located exclusively in front of the listener.
87. The method according to claim 77, wherein
the at least one soundfield is in encoded form, and
generating a number of virtual speaker feeds from the soundfield includes decoding said soundfield and generating the number of virtual speaker feeds from the decoded soundfield.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a wiring provided between adjacent electrodes; and
a thin film transistor,
wherein a channel formation region of the thin film transistor is provided under the wiring,
wherein the channel formation region is provided at a position overlapping with the wiring, and
wherein a channel width direction of the channel formation region is parallel to a direction in which current flows through the wiring.
2. A semiconductor device comprising:
a wiring provided between adjacent electrodes; and
a thin film transistor,
wherein a channel formation region of the thin film transistor is provided under the wiring,
wherein the channel formation region is provided at a position overlapping with the wiring, and
wherein a channel width direction of the channel formation region is parallel to a longitudinal direction of the wiring.
3. A semiconductor device comprising:
a wiring provided between adjacent electrodes; and
a thin film transistor,
wherein a channel formation region of the thin film transistor is provided under the wiring,
wherein the channel formation region is provided at a position overlapping with the wiring, and
wherein a channel width direction of the channel formation region is parallel to a longitudinal direction of the electrode.
4. A semiconductor device comprising:
a wiring provided between adjacent elements; and
a thin film transistor,
wherein a channel formation region of the thin film transistor is provided under the wiring,
wherein the channel formation region is provided at a position overlapping with the wiring, and
wherein a channel width direction of the channel formation region is parallel to a direction in which current flows through the wiring.
5. A semiconductor device comprising:
a wiring provided between adjacent elements; and
a thin film transistor,
wherein a channel formation region of the thin film transistor is provided under the wiring,
wherein the channel formation region is provided at a position overlapping with the wiring, and
wherein a channel width direction of the channel formation region is parallel to a longitudinal direction of the wiring.
6. A semiconductor device comprising:
a wiring provided between adjacent elements; and
a thin film transistor,
wherein a channel formation region of the thin film transistor is provided under the wiring,
wherein the channel formation region is provided at a position overlapping with the wiring, and
wherein a channel width direction of the channel formation region is parallel to a longitudinal direction of the element.
7. The semiconductor device according to claim 1, wherein a channel width of the channel formation region is longer than a channel length of the channel formation region.
8. The semiconductor device according to claim 1, wherein a longitudinal direction of an impurity region connecting the channel formation regions is parallel to the channel width direction.
9. The semiconductor device according to claim 1, wherein the channel formation region is at least one of an amorphous semiconductor and a polycrystalline semiconductor.
10. The semiconductor device according to claim 1, wherein the electrode is a pixel electrode.
11. The semiconductor device according to claim 1, wherein the thin film transistor includes a plurality of channel formation regions.
12. The semiconductor device according to claim 1, wherein one of a source terminal and a drain terminal of the thin film transistor is connected to one of the adjacent electrodes, and
wherein the other of the source terminal and the drain terminal of the thin film transistor is connected to the wiring.
13. The semiconductor device according to claim 2, wherein a channel width of the channel formation region is longer than a channel length of the channel formation region.
14. The semiconductor device according to claim 2, wherein a longitudinal direction of an impurity region connecting the channel formation regions is parallel to the channel width direction.
15. The semiconductor device according to claim 2, wherein the channel formation region is at least one of an amorphous semiconductor and a polycrystalline semiconductor.
16. The semiconductor device according to claim 2, wherein the electrode is a pixel electrode.
17. The semiconductor device according to claim 2, wherein the thin film transistor includes a plurality of channel formation regions.
18. The semiconductor device according to claim 2, wherein one of a source terminal and a drain terminal of the thin film transistor is connected to one of the adjacent electrodes, and wherein the other of the source terminal and the drain terminal of the thin film transistor is connected to the wiring.
19. The semiconductor device according to claim 3, wherein a channel width of the channel formation region is longer than a channel length of the channel formation region.
20. The semiconductor device according to claim 3, wherein a longitudinal direction of an impurity region connecting the channel formation regions is parallel to the channel width direction.
21. The semiconductor device according to claim 3, wherein the channel formation region is at least one of an amorphous semiconductor and a polycrystalline semiconductor.
22. The semiconductor device according to claim 3, wherein the electrode is a pixel electrode.
23. The semiconductor device according to claim 3, wherein the thin film transistor includes a plurality of channel formation regions.
24. The semiconductor device according to claim 3, wherein one of a source terminal and a drain terminal of the thin film transistor is connected to one of the adjacent electrodes, and
wherein the other of the source terminal and the drain terminal of the thin film transistor is connected to the wiring.
25. The semiconductor device according to claim 4, wherein a channel width of the channel formation region is longer than a channel length of the channel formation region.
26. The semiconductor device according to claim 4, wherein a longitudinal direction of an impurity region connecting the channel formation regions is parallel to the channel width direction.
27. The semiconductor device according to claim 4, wherein the channel formation region is at least one of an amorphous semiconductor and a polycrystalline semiconductor.
28. The semiconductor device according to claim 4, wherein the thin film transistor includes a plurality of channel formation regions.
29. The semiconductor device according to claim 4, wherein one of a source terminal and a drain terminal of the thin film transistor is connected to one of the adjacent elements, and
wherein the other of the source terminal and the drain terminal of the thin film transistor is connected to the wiring.
30. The semiconductor device according to claim 5, wherein a channel width of the channel formation region is longer than a channel length of the channel formation region.
31. The semiconductor device according to claim 5, wherein a longitudinal direction of an impurity region connecting the channel formation regions is parallel to the channel width direction.
32. The semiconductor device according to claim 5, wherein the channel formation region is at least one of an amorphous semiconductor and a polycrystalline semiconductor.
33. The semiconductor device according to claim 5, wherein the thin film transistor includes a plurality of channel formation regions.
34. The semiconductor device according to claim 5, wherein one of a source terminal and a drain terminal of the thin film transistor is connected to one of the adjacent elements, and
wherein the other of the source terminal and the drain terminal of the thin film transistor is connected to the wiring.
35. The semiconductor device according to claim 6, wherein a channel width of the channel formation region is longer than a channel length of the channel formation region.
36. The semiconductor device according to claim 6, wherein a longitudinal direction of an impurity region connecting the channel formation regions is parallel to the channel width direction.
37. The semiconductor device according to claim 6, wherein the channel formation region is at least one of an amorphous semiconductor and a polycrystalline semiconductor.
38. The semiconductor device according to claim 6, wherein the thin film transistor includes a plurality of channel formation regions.
39. The semiconductor device according to claim 6, wherein one of a source terminal and a drain terminal of the thin film transistor is connected to one of the adjacent elements, and
wherein the other of the source terminal and the drain terminal of the thin film transistor is connected to the wiring.