1. A propane system comprising,
a refillable propane cylinder having a volume configured for containing no more than about one pound of propane, and
a valve assembly detachably coupled to the cylinder, the valve assembly including,
an outlet connector configured for operatively coupling the valve assembly to an appliance,
a manually activated flow valve arranged for selectively preventing a flow of propane from the cylinder to the appliance,
a relief valve spaced apart from the cylinder, and
a fixed liquid level gauge configured for alerting a safe filling level of the propane cylinder during cylinder refilling.
2. The system according to claim 1 including a back check valve contained at least partially within a space defined by the outlet connector.
3. The system according to claim 1 wherein the outlet connector includes an externally threaded, swivel connector.
4. The system according to claim 1 wherein the manually activated flow valve is substantially aligned with the relief valve.
5. The system according to claim 1 wherein the valve assembly includes a threaded body portion detachably coupled to a threaded opening of the cylinder.
6. The system according to claim 5 wherein the threaded body portion is substantially aligned with the outlet connector.
7. A method of constructing a refillable propane system comprising,
forming a valve body having an upper portion, a lower portion, a first lateral portion and a second lateral portion,
operatively coupling an outlet connector and back check valve assembly to the upper portion,
operatively coupling a manually activated flow valve to the first lateral portion,
operatively coupling a relief valve to the second lateral portion,
operatively coupling a fixed liquid level gauge to the lower portion, and
operatively coupling the lower portion to a refillable propane cylinder having a volume configured for containing about one pound of propane or less.
8. The method according to claim 7 including forming a first passageway through the valve body that exits the valve body through the upper portion, the lower portion, and the second lateral portion.
9. The method according to claim 8 including forming a second passageway through the valve body that extends out of the valve body, through the fixed liquid level gauge and into the cylinder volume.
10. The method according to claim 7 including substantially aligning the upper portion with the lower portion and the first lateral portion with the second lateral portion.
11. The method according to claim 7 including detachably coupling the lower portion to the refillable propane cylinder.
12. The method according to claim 7 including forming threads on an exterior surface of the outlet connector and arranging the outlet connector to swivel relative to the valve body.
13. A propane cylinder having a volume configured for containing about one pound of propane, and a valve body operatively coupled to the propane cylinder, the valve body comprising,
a first connector portion configured for operatively coupling the valve body to a propane fueled appliance,
a relief valve portion,
a channel fluidly connecting the cylinder volume, the connector portion and the relief valve portion,
a flow disruptor configured for selectively fluidly disconnecting the cylinder volume from the first connector portion along the channel, and
a vent tube extending into the cylinder volume and out of the valve body through a selectively sealable vent opening.
14. The propane cylinder according to claim 13 wherein the first connector portion is rotatable and includes external threads.
15. The propane cylinder according to claim 14 wherein the first connector portion includes a back check valve positioned in the channel and configured for allowing bi-directional flow of propane through the connector portion.
16. The propane cylinder according to claim 13 wherein the flow disruptor includes a manually operated hand wheel coupled to a spindle, the spindle having an end portion configured for selectively obstructing the channel.
17. The propane cylinder according to claim 13 wherein the valve body includes a threaded portion coupled directly to a threaded portion of the cylinder.
19. The propane cylinder according to claim 13 including a pressurized propane source fluidly coupled to the first connector portion and a flow of propane flowing from the pressurized propane source, through the channel and into the cylinder.
20. The propane cylinder according to claim 19 wherein a portion of the flow of propane flows through the vent tube and out of the valve body through the vent opening.
21. The propane cylinder according to claim 13 wherein the cylinder includes a single external opening.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A structure comprising:
a transistor formed proximate a substrate, the substrate including a first crystalline semiconductor material; and
a first tunneling diode electrically coupled to a sourcedrain region of the transistor, the first tunneling diode being disposed above a second crystalline semiconductor material lattice-mismatched to the first crystalline semiconductor material,
wherein at least a portion of the second semiconductor material is disposed within a first opening disposed above the substrate, the first opening having a non-crystalline sidewall and configured to trap a majority of defects arising from the lattice-mismatch between the first crystalline semiconductor material and the second crystalline semiconductor material.
2. The structure of claim 1, wherein the first tunneling diode is a resonant tunneling diode (RTD) or a resonant interband tunneling diode (RITD).
3. The structure of claim 1 further comprising a second tunneling diode electrically coupled to the transistor, the second tunneling diode being disposed above a third crystalline semiconductor material lattice-mismatched to the first crystalline semiconductor material, wherein at least a portion of the third semiconductor material is disposed within a second opening disposed above the substrate, the second opening having a non-crystalline sidewall and configured to trap a majority of defects arising from the lattice-mismatch between the first crystalline semiconductor material and the third crystalline semiconductor material.
4. The structure of claim 3, wherein each of the first tunneling diode, the second tunneling diode, and the sourcedrain region of the transistor are connected to a same electrical node.
5. The structure of claim 3, wherein the first opening and the second opening are formed over a doped region in the first crystalline material of the substrate, the doped region being electrically isolated through the substrate to a well of the transistor, the second crystalline material in the first opening and the third crystalline material in the second opening adjoining the doped region.
6. The structure of claim 3, wherein the first opening and the second opening are formed over the sourcedrain region of the transistor in the first crystalline material of the substrate, the second crystalline material in the first opening and the third crystalline material in the second opening adjoining the sourcedrain region.
7. The structure of claim 1, wherein the transistor and the first tunneling diode are components of a static random access memory (SRAM) cell.
8. The structure of claim 1, wherein the sourcedrain region of the transistor is electrically coupled to a sourcedrain region of a second transistor.
9. The structure of claim 1, wherein the sourcedrain region of the transistor is electrically coupled to the first tunneling diode and to a second tunneling diode.
10. The structure of claim 1, wherein the first opening has a width, and the non-crystalline sidewall has a height, the height being equal to or greater half of the width.
11. A structure comprising:
a static random access memory (SRAM) circuit comprising:
a transistor in andor on a substrate, the substrate including a first crystalline material, and
a first resonant tunneling diode (RTD) proximate an opening disposed above the substrate, the opening comprising a non-crystalline sidewall, the first RTD being coupled to a sourcedrain region of the transistor, the first RTD including a crystalline material lattice-mismatched to the first crystalline material.
12. The structure of claim 11, wherein the opening has a width, and the crystalline material has an external planar surface that at least partially interfaces with the non-crystalline sidewall, the external surface having a height greater than half the width.
13. The structure of claim 11 further comprising a second RTD, the first RTD and the second RTD being coupled together.
14. The structure of claim 13, wherein the first RTD and the second RTD are coupled together serially.
15. The structure of claim 13, wherein the first RTD and the second RTD are coupled to the sourcedrain region of the transistor.
16. The structure of claim 11, wherein a majority of defects arising from the lattice-mismatch terminate at a vertical surface of the crystalline material.
17. The structure of claim 11, wherein the opening comprising the non-crystalline sidewall is formed in a dielectric material.
18. A structure comprising:
a tunneling diode structure in an opening of a dielectric layer over a substrate, the substrate comprising a first crystalline material, the tunneling diode structure comprising a second crystalline material lattice mismatched to the first crystalline material, the second crystalline material comprising defects arising from the lattice-mismatch, a majority of the defects arising from the lattice-mismatch terminating at a sidewall of the second crystalline material; and
a magnetic tunnel junction structure over the tunneling diode, the magnetic tunnel junction structure comprising a magnetic pinned layer over the tunneling diode, a tunnel barrier layer over the magnetic pinned layer, and a magnetic free layer over the barrier layer.
19. The structure of claim 18, wherein the tunneling diode is a resonant interband tunneling diode (RITD).
20. The structure of claim 18, wherein the magnetic tunnel junction structure comprises:
anti-ferromagnetic exchange bias layer,
a first magnetic pinned layer over the anti-ferromagnetic exchange bias layer,
a spacer layer over the first magnetic pinned layer,
a second magnetic pinned layer over the spacer layer,
a tunnel barrier layer over the second magnetic pinned layer, and
a magnetic free layer over the tunnel barrier layer.