What is claimed is:
1. A method of manufacturing a semiconductor device in which a semiconductor element is formed in a semiconductor substrate, including a step of selectively grinding or polishing the peripheral portion and the beveled portion on the side of the main surface of a target substrate including a semiconductor substrate.
2. The method of manufacturing a semiconductor device according to claim 1, wherein the step of selectively grinding or polishing the peripheral portion and the beveled portion on the side of the main surface of the target substrate is carried out after a step of forming an uneven portion in the target substrate.
3. The method of manufacturing a semiconductor device according to claim 1, wherein the step of selectively grinding or polishing the peripheral portion and the beveled portion on the side of the main surface of the target substrate is carried out after at least one additional step following a step of forming an uneven portion in the target substrate.
4. The method of manufacturing a semiconductor device according to claim 1, wherein the step of selectively grinding or polishing the peripheral. portion and the beveled portion on the side of the main surface of the target substrate is carried out after a step of covering the main surface of the target substrate with a resist film, said step being carried out after the step of forming an uneven portion in the target substrate.
5. The method of manufacturing a semiconductor device according to claim 1, wherein the step of selectively grinding or polishing the peripheral portion and the beveled portion on the side of the main surface of the target substrate is carried out after a step of forming a film of a material providing a source of contamination of the processing machine for applying a predetermined processing to the target substrate including the semiconductor substrate or providing a source of contamination of the semiconductor substrate.
6. A method of manufacturing a semiconductor device comprising:
applying an anisotropic dry etching treatment to form an uneven portion in a target substrate including a semiconductor substrate; and
selectively grinding or polishing the peripheral portion and the beveled portion on the side of the main surface of the target substrate including the semiconductor substrate.
7. A method of manufacturing a semiconductor device comprising:
a first step of forming an insulating film on a semiconductor substrate;
a second step of applying an anisotropic etching to the insulating film and the semiconductor substrate so as to form a trench in the semiconductor substrate;
a third step of depositing a polysilicon film in a manner to cover the main surface of the semiconductor substrate including the inner surface of the trench;
a fourth step of grinding or polishing the peripheral portion and the beveled portion on the side of the main surface of the semiconductor substrate covered with the polysilicon film; and
a fifth step of polishing the polysilicon film with the insulating film used as a stopper.
8. The method of manufacturing a semiconductor device according to claim 7, wherein said trench is used for forming a trench capacitor formed on said semiconductor substrate.
9. The method of manufacturing a semiconductor device according to claim 7, wherein the second step is a dry etching step.
10. The method of manufacturing a semiconductor device according to claim 7, wherein the fifth step is a chemical and mechanical polishing step.
11. The method of manufacturing a semiconductor device according to claim 7, wherein said insulating film comprises a first insulating film formed on said semiconductor substrate and a second insulating film formed on said first insulating film, and said second insulating film is used as a stopper in the step of polishing said polysilicon film.
12. The method of manufacturing a semiconductor device according to claim 11, wherein said first insulating film is a silicon oxide film, and said second insulating film is a silicon nitride film.
13. A method of manufacturing a semiconductor device, comprising:
a first step of forming a first insulating film on a semiconductor substrate;
a second step of etching the first insulating film to form a trench in the first insulating film;
a third step of forming a barrier metal layer on the upper surface of the first insulating film and on the inner surface of the trench;
a fourth step of depositing a metal layer in a manner to cover the main surface side of the semiconductor substrate with the barrier metal layer interposed therebetween;
a fifth step of grinding or polishing the peripheral portion and the beveled portion on the side of the main surface of the semiconductor substrate covered with the metal layer;
a sixth step of polishing the first insulating film with the metal layer used as a stopper so as to remove the metal layer and the barrier metal layer on the upper surface of the first insulating film so as to planarize the surface; and
a seventh step of forming a second insulating film in a manner to cover the upper surface of the first insulating film and the upper surface of the metal layer.
14. The method of manufacturing a semiconductor device according to claim 13, wherein said trench is used as a wiring trench for forming a damascene wiring of said semiconductor device.
15. The method of manufacturing a semiconductor device according to claim 13, wherein the second step is an anisotropic dry etching step.
16. The method of manufacturing a semiconductor device according to claim 13, wherein the sixth step is a chemical and mechanical polishing step.
17. The method of manufacturing a semiconductor device according to claim 13, wherein said first insulating film is a silicon oxide film.
18. The method of manufacturing a semiconductor device according to claim 13, wherein said second insulating film is a laminate film consisting of a silicon oxide film and a silicon nitride film.
19. The method of manufacturing a semiconductor device according to claim 13, wherein said barrier metal includes a TaN film formed by a sputtering method.
20. The method of manufacturing a semiconductor device according to claim 13, wherein said metal layer is a copper layer deposited by a plating method.
21. A method of manufacturing a semiconductor device, comprising:
forming an insulating film on a semiconductor substrate;
selectively etching the insulating film to form a trench in the insulating film;
forming a film containing a contaminant material formed in the manufacturing step of the semiconductor device; and
grinding or polishing the peripheral portion and the beveled portion on the side of the main surface of the semiconductor substrate covered with the film containing the contaminant material.
22. The method of manufacturing a semiconductor device according to claim 21, wherein the film containing a contaminant material formed in the manufacturing process of said semiconductor device is a film containing a metal element selected from the group consisting of Cu, Ag, Ni, Co, Ru, Pb, and Fe.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of nondestructive analysis of an object selected from the group which consists of paintings and monuments, comprising the steps of:
(a) exposing the object to a polychromatic incident light beam including wavelengths ranging from ultraviolet to mid-infrared parts of the spectrum;
(b) generating a broad-band image of the object in response to the incident light beam with wavelengths lying within spectral sensitivity limits of ultraviolet, visible, near-infrared and mid-infrared detectors and imaging photon energy converters used for image capture;
(c) generating a plurality of narrow-band images corresponding to the broad-band image and comprised of the intensities of said broad-band image captured in respective narrow wavelength bands shorter than sensitivity spectral ranges of respective detectors;
(d) for a multiplicity of object material models, obtaining light intensities under the same illumination and imaging conditions as used for the object at the same narrow wavelength bands; and
(e) comparing for any spatial location of an examined area of the object onto which said incident light beam is directed, light intensities expressed by the materials constituting the object in said narrow wavelength bands with the light intensities expressed by the object material models in the same narrow wavelength bands under the same illumination and imaging conditions to determine and map the compositional characteristics of the material used to create the object.
2. The method defined in claim 1 wherein said object is exposed in step (a) to a plurality of illuminating light beams of different center wavelengths in time succession and wherein, in step (c) a plurality of narrow-band images are generated of the same or longer center wavelength as said illuminating light beams.
3. The method defined in claim 1 wherein the object is a painting and step (c) comprises tuning a center wavelength of a captured narrow-band image across the optical spectrum from the ultraviolet to the near-infrared in time succession to generate the narrow-band images and enable selective imaging, comparison, and compositional and structural analysis in succession of different layers of the painting from a surface to a backing thereof.
4. The method defined in claim 1 wherein the object material models and said narrow-band images are both reflectance andor fluorescence images of at least a generally similar color appearance but different compositional characteristics enabling a direct comparison of the intensities expressed from the object and model materials and identification of the object material.
5. The method defined in claim 1 wherein spatial and spectral distribution of reflectance andor fluorescence intensities derived from the captured narrow band images of the object area under analysis, are compared, in one or more spatial locations of the area under analysis, with the previously measured reflectance andor fluorescence spectra of appropriate object material models, thus assisting the identification of the object material under analysis.
6. The method defined in claim 1, further comprising the step of ablating by laser an unwanted surface material from the surface of said object utilizing said images for control of the laser ablation.
7. The method defined in claim 1, further comprising the step of removing unwanted surface material from said object by chemical or mechanical action with on-line or off-line control of the removal in response to said images.
8. The method defined in claim 1 wherein, in step (a) the object is exposed to a blue-ultraviolet light beam and wherein in step (b) images comprising blue-ultraviolet reflecting images andor visible-near infrared fluorescence images of the object are produced.
9. The method defined in claim 1 wherein, in step (e) surface features including texture, deposited material, varnishes and coatings are identified and high-lighted.
10. An apparatus for the nondestructive analysis of an object selected from the group which consists of paintings and monuments, comprising:
a light source for exposing the object to a polychromatic incident light beam including wavelengths ranging from ultraviolet to mid-infrared parts of the spectrum;
an optical detector for collecting light expressed by an examined area of the object exposed to the incident light beam for forming at least one image of said area; and
for recording light intensity of the light expressed by said object as a function of location thereon;
control means for selecting center wavelengths of the incident light beam and images from said object and for controlling wavelengths and intensities of said incident light beam and image calibration and acquisition parameters;
an image display and image storage device connected to said optical detector; and
a software-operated unit for operating said control means for controlling imaging wavelength, operating characteristics of said detector, said calibration, and imaging data analysis and processing, said detector being constructed and arranged to capture a plurality of reflectance andor fluorescence images in various spectral bands to provide compositional and structural information assisting determination of conservation needs of the object and for on-line and off-line evaluation and control of restoration tasks.
11. The apparatus defined in claim 10 wherein said detector comprises a plurality of optical detectors with different spectral sensitivity and radiating deflection mechanisms for causing rays from said object onto said optical detectors upon passing through an optical aperture.
12. The apparatus defined in claim 10 wherein said detector comprises a CCD or a C-MOS 2 dimensional optical sensor optically coupled with infrared or ultraviolet-to-visible imaging converters.
13. The apparatus defined in claim 10 wherein said light source includes a plurality of light-emitting diodes with spectral emissions in wavelengths ranging from ultraviolet to mid-infrared parts of the spectrum.
14. The apparatus defined in claim 10 wherein said software-operated unit includes an oral network with algorithms and expert system for automated comparison of optical and other characteristics including historical and technical data as to said object with data as to object material models enabling nondestructive analysis of the object.
15. The apparatus defined in claim 10 wherein said light source, said detector, said image display device and said optical detector are integrated in a head-mounted platform.