1. A process for the production of granules or powders, suitable as coating agents and binders for oral or dermal pharmaceutical forms, for cosmetics or food supplements, consisting essentially of
(a) 50 to 90 by weight, of a copolymer, consisting of free radical-polymerized C1- to C4-esters of acrylic or methacrylic acid and further (meth)acrylate monomers which contain functional tertiary amino groups, wherein the copolymer is present in granule or powder form,
(b) 3 to 25% by weight, based on (a), of an emulsifier having an HLB of at least 14, and
(c) 5 to 50% by weight, based on (a), of a C12- to C18-monocarboxylic acid or of a C12- to C18-hydroxyl compound,
where the components (a), (b) and (c) are simultaneously or successively blended or mixed with one another, optionally with addition of a pharmaceutical active compound andor further customary additives, fused in a heatable mixer, mixed, the melt is cooled and comminuted to give granules or powders wherein the coating and binding agents have a water vapor permeability of at most 300 (gm2d) as measured according to DIN 53 122.
2. The process as claimed in claim 1, wherein characterized in that the heatable mixer employed is an extruder.
3. The process as claimed in claim 2, characterized in that a double screw extruder is employed.
4. The process as claimed in one or more of claim 2 to 3, characterized in that extrusion is carried out at temperatures in the range from 80 to 160\xb0 C.
5. Granules or powder, suitable as a readily water-dispersible or fusible precursor for a coating agent and binder for oral or dermal pharmaceutical forms, for cosmetics or food supplements, characterized in that it can be produced as claimed in one or more of claims 1 to 4.
6. The use of granules or powders as claimed in claim 5 for the production of a pharmaceutical form which is contained a moisture-sensitive pharmaceutical active compound from the active compound classes of the analgesics, antirheumatics, active compounds for the treatment of gastric ulcers, antibiotics, antihypotensives, antidepressants, thyroid therapeutics, anti Parkinson active compounds, anxiolytics, peptides, phospohordiesterase inhibitors, proteins, cardiovascular agents or neuroleptics or their salts.
7. The use as claimed in claim in claim 6, characterized in that the moisture-sensitive pharmaceutical active compound present is acetylsalicylic acid, carbenoxolone, cefatotin, epinefrine, imipramine, potassium iodide, ketoprofen, levodopa, nitrazepam, nitroprusside, oxitetracycline HCl, promethazine, omeprazole or other benzimidazole derivatives, ranitidine or streptomycin or their salts.
8. The use of the powder or granules as claimed in claim 5 as a moisture-isolating coating.
9. The use of the powder or granules as claimed in claim 5 as a taste-isolating coating for active compound-containing pharmaceutical compositions.
10. The use of the powder or granules as claimed in claim 5 as a binder by processing by means of wet or melt granulation.
11. The use of two or more types of granules or powders as claimed in claim 5, the granules or powders in each case containing a different color pigment and being processed by mixing to give a coating agent and binder.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An emitter comprising:
a crystalline base layer material comprising an emission surface along a crystallographic plane of the material; and
an array of nanocavities on the emission surface,
wherein the nanocavities have a plurality of facets;
wherein the plurality of facets are substantially along equivalent crystallographic planes of one or more families of planes of the material having substantially equal surface energies; and
wherein the substantially equal surface energies are equal to or lower than a surface energy of the crystallographic plane of the emission surface.
2. The emitter of claim 1, wherein the equivalent crystallographic planes of the one or more families of planes and the crystallographic plane of the emission surface comprise a group of lowest energy planes for the material of the base layer.
3. The emitter of claim 1, wherein the facets of the nanocavities are substantially along equivalent crystallographic planes of a family of planes.
4. The emitter of claim 1, wherein the base layer material comprises a polycrystalline surface including the crystallographic plane of the emission surface.
5. The emitter of claim 1, wherein the base layer material comprises a highly anisotropic distribution of surface energies.
6. The emitter of claim 1, wherein the base layer material comprises a refractory material.
7. The emitter of claim 6, wherein the refractory material comprises a compound of a transition metal.
8. The emitter of claim 7, wherein the compound is at least one selected from the group consisting of oxides, nitrides, carbides, borides and combinations thereof.
9. The emitter of claim 7, wherein the refractory material further comprises soluble elements dissolved in the compound.
10. The emitter of claim 1, wherein the base layer material comprises WC, W2C, HfN, or combinations thereof.
11. The emitter of claim 1, wherein the base layer material comprises W2C and wherein the emission surface is substantially along the (0001) plane.
12. The emitter of claim 11, wherein the facets of the nanocavities are substantially along planes from the {11-20} family of planes.
13. The emitter of claim 1, wherein the base layer material comprises HfN, wherein the emission surface is substantially along the (111) plane, and wherein the facets of the cavities are substantially along the {111} family of planes.
14. The emitter of claim 1, wherein the nanocavities have a hexagonal or near-hexagonal geometry.
15. The emitter of claim 1, wherein the emitter selectively suppresses radiation in a range from about 750 nanometers to about 2500 nanometers.
16. The emitter of claim 1, wherein an average lattice spacing of the nanocavities in the array is in a range from about 400 nanometers to about 600 nanometers.
17. The emitter of claim 1, wherein an average nanocavity cross-sectional dimension is in a range from about 200 nanometers to 300 nanometers.
18. The emitter of claim 1, wherein an average nanocavity depth is in a range from about 200 nanometers to about 600 nanometers.
19. The emitter of claim 1, wherein the emitter exhibits selective emission in a range from about 390 nanometers to about 750 nanometers.
20. The emitter of claim 1, further comprising a support element, wherein the base layer is disposed over the support element.
21. The emitter of claim 20, wherein the support element comprises a planar or a coiled structure.
22. A radiation source comprising:
a base;
a light-transmissive envelope coupled to the base; and
an emitter disposed within the light-transmissive envelope, wherein the emitter comprises
a crystalline base layer material comprising an emission surface along a crystallographic plane of the material; and
an array of nanocavities on the emission surface,
wherein the nanocavities have a plurality of facets;
wherein the plurality of facets are substantially along equivalent crystallographic planes of one or more families of planes of the material having substantially equal surface energies; and
wherein the substantially equal surface energies are equal to or lower than a surface energy of the crystallographic plane of the emission surface.
23. The radiation source of claim 22, further comprising a gaseous medium disposed within the envelope and in contact with the emitter.
24. An emitter comprising:
a crystalline base layer material comprising WC, W2C, HfN, or combinations thereof;
an emission surface along a crystallographic plane of the material; and
an array of nanocavities on the emission surface,
wherein the nanocavities have a plurality of facets;
wherein the plurality of facets are substantially along equivalent crystallographic planes of one or more family of planes of the material having substantially equal surface energies; and
wherein the substantially equal surface energies are equal to or lower than a surface energy of the crystallographic plane of the emission surface.