1. A III nitride semiconductor device having a III nitride semiconductor layer, comprising:
a plurality of protrusions rounded like domes in a predetermined region on the (000-1) side of the III nitride semiconductor layer, a surface of the plurality of protrusions comprising planes except for the (000-1) plane, and a height of the protrusions being 0.1 \u03bcm to 3 \u03bcm; and
an electrode on the upper surface of the predetermined region.
2. The III nitride semiconductor device according to claim 1, wherein the bottom portions of valleys formed between the adjacent protrusions has a steep angle.
3. The III nitride semiconductor device according to claim 1, wherein the surface of each of the protrusions is a random surface in which a facet cannot be defined.
4. A III nitride semiconductor device comprising:
a support;
and a first conductivity-type III nitride semiconductor layer, an active layer, and a second conductivity-type III nitride semiconductor layer sequentially placed on the support,
wherein the side of the second conductivity-type III nitride semiconductor layer opposite to the support is the (000-1) side, and
the III nitride semiconductor device has a plurality of protrusions rounded like domes in a predetermined region on the (000-1) side of the second conductivity-type III nitride semiconductor layer and has an electrode on the upper surface of the predetermined region, a surface of the plurality of protrusions comprising planes except for the (000-1) plane, and a height of the protrusions being 0.1 \u03bcm to 3 \u03bcm.
5. The III nitride semiconductor device according to claim 4, wherein the second conductivity type is n type.
6. The III nitride semiconductor device according to claim 4, wherein the electrode is a TiAl electrode.
7. A method of producing a III nitride semiconductor device having a III nitride semiconductor layer, comprising the steps of:
performing anisotropic etching on a predetermined region on the (000-1) side of the III nitride semiconductor layer to form a plurality of pyramidal projections;
performing isotropic etching on the predetermined region to change the projections into protrusions rounded like domes, a surface of the protrusions comprising planes except for the (000-1) plane; and
forming an electrode on the upper surface of the predetermined region having the protrusions.
8. The method of producing a III nitride semiconductor device, according to claim 7, wherein the anisotropic etching is wet etching in which the surface of each of the projections is a facet other than the (000-1) plane.
9. The method of producing a III nitride semiconductor device, according to claim 8, wherein the facet is one of the (10-1-1) plane, the (10-1-2) plane, and the (10-1-3) plane.
10. The method of producing a III nitride semiconductor device, according to claim 8, wherein an alkaline solution is used in the anisotropic etching.
11. The method of producing a III nitride semiconductor device, according to claim 8, wherein the isotropic etching is dry etching in which the surface of each of the protrusions is a random surface where a facet cannot be defined.
12. The method of producing a III nitride semiconductor device, according to claim 7, wherein the step of forming the electrode comprises:
forming a protective film on the upper surface of the predetermined region;
applying resist onto the protective film and removing the resist of an electrode formation area by photolithography;
removing the protective film of the electrode formation area; and
forming an electrode in the electrode formation area.
13. The method of producing a III nitride semiconductor device, according to claim 7, wherein the height of the protrusions is 0.1 \u03bcm to 3 \u03bcm.
14. A method of producing a III nitride semiconductor device, comprising the steps of:
forming a lift-off layer, a second conductivity-type III nitride semiconductor layer, an active layer, and a first conductivity-type III nitride semiconductor layer in this order on a growth substrate;
forming a support on the first conductivity-type III nitride semiconductor layer;
removing the lift-off layer, thereby separating the growth substrate from the second conductivity-type III nitride semiconductor layer;
performing anisotropic etching on a predetermined region of the exposed second conductivity-type III nitride semiconductor layer on the (000-1) plane side, thereby forming a plurality of pyramidal projections;
performing isotropic etching on the predetermined region and changing the projections into a plurality of protrusions rounded like domes, a surface of the plurality of protrusions comprising planes except for the (000-1) plane; and
forming an electrode on the upper surface of the predetermined region having the protrusions.
15. The method of producing a III nitride semiconductor device, according to claim 14, wherein the height of the protrusions is 0.1 \u03bcm to 3 \u03bcm.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An air current detection aid comprising:
a fibrous wind-borne material having fibers which are easily separated and once separated tend to float upon, and be carried along by, air currents;
a pouch-like receptacle for receiving, housing and dispensing said fibrous wind-borne material and for attachment to other objects or surfaces comprising:
a pair of flexible members comprising an upper member and a lower member with said members being substantially attached one to the other along the edges of said members in order to form or define a chamber or pocket between said members for receiving and housing said fibrous material;
an aperture or port, positioned on said upper member, through which a portion of said fibrous material housed within said chamber or pocket may be accessed and dispensed; and,
a means for attaching said pouch-like receptacle to another object or surface.
2. The apparatus of claim 1, wherein said air current detection aid is permanently attached to, or incorporated within, another object or surface.
3. The apparatus of claim 1, wherein said air current detection aid is removeably attached to another object or surface.
4. The apparatus of claim 1, wherein said means for attaching said pouch-like receptacle to another object or surface comprises sewing said receptacle onto said object or surface.
5. The apparatus of claim 1, wherein said means for attaching said pouch-like receptacle to another object or surface comprises gluing said receptacle to said object or surface.
6. The apparatus of claim 1, wherein said means for attaching said pouch-like receptacle to another object or surface comprises the use of hook and loop material.
7. The apparatus of claim 1, wherein said air current detection aid is attached to golfing, hunting, sporting or observation accessory items such as a gloves, bags, cases, optical aids, backpacks or similar articles.
8. The apparatus of claim 1, wherein said air current detection aid is attached to an article of clothing or clothing accessory.
9. The apparatus of claim 1, wherein said air current detection aid is attached to or incorporated within the external surface of a typical golf or hunting glove.
10. The apparatus of claim 1, wherein the flexible members of said pouch-like receptacle are attached to each other so as to leave an opening along a portion of the edges of said members for filling and refilling said receptacle with said fibrous wind-borne material as necessary or desirable.
11. The apparatus of claim 10, wherein said refill opening along a portion of the edges of said members is provided with a means for non-permanent closure of said opening.
12. The apparatus of claim 11, wherein said means for non-permanent closure of said refill opening comprises the use of hook and loop material.
13. The apparatus of claim 1, wherein said fibrous, wind-borne material is comprised of natural fibers.
14. The apparatus of claim 1, wherein said fibrous, wind-borne material is comprised of man-made or artificial fibers.
15. The apparatus of claim 1, wherein said fibrous, wind-borne material is comprised of colored fibers.