1. A gradient amplifier of a gradient coil within a Magnetic Resonance Imaging system, comprising:
an output stage adapted to connect to an electrical energy source;
a compensation device adapted to connect to the electrical energy source and to measure a first parameter value and to output at least one compensation signal;
a control device,
wherein the control device accepts at least one compensation signal as an input, and controls the output stage by a control signal output; and
wherein the output stage of the gradient amplifier permits supply-voltage-dependent, output-current-regulated amplification by the gradient amplifier of the Magnetic Resonance Imaging system gradient coil within the magnetic resonance system.
2. The amplifier of claim 1, further comprising:
a regulation system connected on an input side to the output stage and on an output side to the control device and configured to produce a regulator signal (RS);
wherein the regulator signal (RS) is a function of a second parameter value of the output stage.
3. The amplifier of claim 1, wherein the energy source is a voltage source, and the first parameter is the input supply voltage.
4. The amplifier as in claim 1, wherein the amplifier is a pulse width modulator.
5. The amplifier of claim 1, wherein the compensation device generates a compensation signal that is dependent on the first parameter value and on one of a nominal or a maximal value of the first parameter value.
6. The amplifier of claim 1, wherein the compensation device is connected on the output side to at least one of the control device or to the regulation system.
7. The amplifier of claim 2 further comprising:
a regulator signal amplification device connected to the regulation system,
wherein the compensation device is connected on the output side thereof to an input of the regulator signal amplification device.
8. The amplifier of claim 3, wherein the regulator system accepts at least one compensation signal and the regulator signal (RS) is variable as a function of the first parameter value.
9. The amplifier of claim 1,
wherein the energy source is a voltage source; and that the first parameter is an output supply voltage.
10. The amplifier of claim 2, wherein the second parameter value is at least one of an amplifier output voltage or a load current.
11. A magnetic resonance system having gradient amplifier and a gradient coil, comprising:
an output stage adapted to connect to an electrical energy source;
a compensation device adapted to connect to the electrical energy source and to measure a first parameter value and to output at least one compensation signal;
a control device, wherein the control device accepts at least one compensation signal as an input, and controls the output stage by a control signal output; and
wherein the output stage of the gradient amplifier permits supply-voltage-dependent, output-current-regulated amplification by the gradient amplifier of the gradient coil in the magnetic resonance system.
12. A method of controlling a gradient amplifier of a gradient coil within a Magnetic Resonance system, having an output stage which is supplied by an electrical energy source, the method comprising:
ascertaining a first parameter value of the energy source;
generating a compensation signal as a function of the first parameter value;
generating a control signal as a function of the compensation signal, wherein the output stage generates an output signal as a function of the control signal; and
wherein the method of controlling the output stage of the gradient amplifier permits supply-voltage-dependent, output-current-regulated amplification by the gradient amplifier of the gradient coil in the magnetic resonance system.
13. The method as defined by claim 12, further comprising: ascertaining a second parameter value of the output signal; generating a regulator signal as a function of the second parameter value; and modifying the control signal as function of the regulator signal.
14. The amplifier of claim 13, wherein the second parameter value is at least one of an amplifier output voltage or a load current.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A light emitting diode (LED) package, comprising:
a silicon-on-insulator substrate including a first silicon based material, a second silicon based material, and an insulation layer interposed therebetween, a cavity recessing from the first silicon based material, and at least one insulation trench dividing the silicon-on-insulator substrate into electrically-isolated segments of positive and negative-electrodes,
a plurality of metal lines formed on the silicon-on-insulator substrate; and
at least one LED chip, disposed in the cavity, wherein positive and negative electrodes of the LED chip are electrically connected to the metal lines.
2. The package of claim 1 wherein the metal lines comprise a material which is selected from one group consisted of Ag, Au, Cu, Al, Pt, Pd, Cr, Ni and an alloy consisted of above elements.
3. The package of claim 1 wherein the cavity is formed with an inclined plane.
4. The package of claim 1 wherein the cavity is formed with a vertical plane.
5. The package of claim 1 further comprising an encapsulating filling which covers and fills the cavity.
6. The package of claim 5 wherein the encapsulating filling comprises an encapsulation epoxy.
7. The package of claim 6 wherein the encapsulation epoxy forms at least one lens.
8. The package of claim 1 further comprising a dielectric layer filled in the insulation trench.
9. The package of claim 1 further comprises at least one electrically-conductive plug in the insulation trench.
10. The package of claim 9, wherein the LED chips connect to each other in serial, parallel, or parallel-serial connection through the electrically-conductive plug.
11. The package of claim 1, wherein the cavity comprising a first depth and a second depth.
12. The package of claim 1 wherein the LED chip is a flip-chip type LED.
13. The package of claim 1 wherein the first silicon based material has <100> crystalline direction.
14. The package of claim 1 wherein the cavity is capable of reflecting the light generated from the LED chip.
15. A light emitting diode (LED) package, comprising:
a silicon-on-insulator substrate including a first silicon based material, a second silicon based material, and an insulation layer interposed therebetween, a cavity recessing from the first silicon based material, at least one insulation trench dividing the silicon-on-insulator substrate into electrically-isolated segments of positive and negative electrodes, and a plurality of metal lines formed on the silicon-on-insulator substrate;
at least one LED chip, disposed in the cavity, wherein positive and negative electrodes of the LED chip are electrically connected to the metal lines, respectively; and
an encapsulating filling which covers and fills the cavity.
16. The package of claim 15 wherein the encapsulating filling comprises an encapsulation epoxy.
17. The package of claim 16 wherein the encapsulation epoxy forms at least one lens.
18. The package of claim 15 wherein the cavity is formed with an inclined plane.
19. The package of claim 15 wherein the cavity is formed with a vertical plane.
20. The package of claim 15 further comprises at least one electrically-conductive plug in the insulation trench.
21. The package of claim 20 wherein the LED chips connect to each other in serial, parallel, or parallel-serial connection via the electrically-conductive plug.
22. The package of claim 15 wherein the cavity comprises a first depth and a second depth.
23. The package of claim 15 wherein the LED chip is a flip-chip type LED.
24. The package of claim 15 wherein the first silicon based material has <100> crystalline direction.
25. The package of claim 15 wherein the cavity is capable of reflecting the light generated from the LED chip.
26. A light emitting diode (LED) package, comprising:
a silicon-on-insulator substrate, comprising a first silicon based material, a second silicon based material, an insulation layer interposed therebetween, a cavity recessing from the first silicon based material, a plurality of insulation trenches dividing the silicon-on-insulator substrate into electrically-isolated segments of positive and negative electrodes, the insulation trenches being disposed with a dielectric layer, a plurality of metal lines formed on the silicon-on-insulator substrate; and
at least one LED chip, disposed in the cavity, wherein positive and negative electrodes of the LED chip electrically connect to the metal lines respectively.
27. The package of claim 26 wherein the cavity is formed with an inclined plane.
28. The package of claim 26 wherein the cavity is formed with a vertical plane.
29. The package of claim 26 further comprising an encapsulating filling which covers and fills the cavity.
30. The package of claim 29 wherein the encapsulating filling comprises an encapsulation epoxy.
31. The package of claim 30 wherein the encapsulation epoxy forms at least one lens.
32. The package of claim 26 further comprises at least one electrically-conductive plug in the insulation trenches.
33. The package of claim 32 wherein the LED chips connect to each other in serial, parallel, or parallel-serial connection via the electrically-conductive plug.
34. The package of claim 26 wherein the cavity comprising a first depth and a second depth.
35. The package of claim 26 wherein the LED chip is a flip-chip type LED.
36. The package of claim 26 wherein the first silicon based material has <100> crystalline direction.
37. The package of claim 26 wherein the cavity is capable of reflecting the light. generated from the LED chip.