1. A stent comprising:
a bioabsorbable prohealing layer configured to promote endothelialization upon exposure to bodily fluids; and
a bioabsorbable drug-polymer layer above a luminal surface of the prohealing layer.
2. The stent of claim 1, wherein the prohealing layer comprises a protein, peptide, or antibody that attracts and binds endothelial cells.
3. The stent of claim 1, wherein the prohealing layer comprises a substance that attracts and binds endothelial progenitor cells.
4. The stent of claim 3, wherein the substance comprises an antibody selected from the group consisting of CD-34, CD-133, and vegf type 2 receptor.
5. The stent of claim 1, wherein the prohealing layer comprises prohealing material dispersed within a bioabsorbable polymer.
6. The stent of claim 5, wherein the bioabsorbable polymer is selected from the group consisting of poly(ester amide) and poly(L-lactide).
7. The stent of claim 1, wherein the drug-polymer layer comprises an drug mixed or dispersed within a bioabsorbable polymer.
8. The stent of claim 1, wherein the drug-polymer layer comprises an active agent selected from the group consisting of anti-proliferative agents, anti-inflammatory agents and combinations thereof.
9. The stent of claim 1, further comprising a bioabsorbable polymeric base layer above a luminal surface of the prohealing layer.
10. The stent of claim 1, further comprising a coating above the prohealing layer, the drug-polymer layer, or both the prohealing layer and the drug-polymer layer.
11. The stent of claim 10, wherein the coating comprises an anti-thrombotic drug dispersed within a bioabsorbable polymer.
12. The stent of claim 10, wherein the coating comprises a vasodilator dispersed within a bioabsorbable polymer.
13. A method of fabricating a bioabsorbable stent, the method comprising:
forming a bioabsorbable prohealing coating layer over a bioabsorbable base polymer tube, the prohealing coating layer configured to promote endothelialization upon exposure to bodily fluids;
forming a bioabsorbable drug-polymer layer over the prohealing coating layer; and
laser cutting a stent pattern in the coated polymer tube to form a stent.
14. The method of claim 13, further comprising coating the polymer tube to form a top-coat layer over the drug-polymer layer.
15. The method of claim 14, wherein the top-coat layer comprises an anti-thrombotic drug or vasodilator dispersed in a bioabsorbable polymer.
16. The method of claim 13, further comprising coating the stent to form a top-coat layer over the drug-polymer layer, the prohealing layer, or both the drug-polymer layer and the prohealing layer.
17. The method of claim 13, wherein the prohealing layer comprises a protein, peptide, or antibody that attracts and binds endothelial cells.
18. The method of claim 13, wherein the prohealing layer comprises a substance that attracts and binds endothelial progenitor cells.
19. The method of claim 18, wherein the substance comprises an antibody selected from the group consisting of CD-34, CD-133, and vegf type 2 receptor.
20. The method of claim 13, wherein the prohealing layer comprises a prohealing material dispersed within a bioabsorbable polymer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for optical proximity effect correction of contact holes, comprising the steps of:
providing a test photo mask, wherein a plurality of first hole patterns are built thereon and the first hole patterns are combinations of at least one pitch and at least one mask critical dimension (mCD);
executing an exposure and development process on a testing photoresist layer using the test photo mask to form a plurality of second hole patterns corresponding to the first hole patterns;
measuring photoresist critical dimensions (pCDs) of the second hole patterns on the test photoresist layer;
determining correction of the mCDs for each combination of the pCDs and the pitches;
performing a first correction for at least one side of at least one contact hole of a processing mask pattern based on the correction of the mCDs; and
performing a second correction of the contact hole of the processing mask pattern to a square having the same area as the first corrected contact hole and having the same center as the uncorrected contact hole.
2. The method as claimed in claim 1, wherein the test photo mask is divided to a plurality of regions, each of which corresponds to one of the first hole patterns, each hole pattern comprises a plurality of holes arranged in a matrix, and the holes have a designated mCD and a designated pitch therein.
3. The method as claimed in claim 1, further comprising the steps of:
establishing corresponding relationships of an area and at least one actual mCD, wherein the area is a region of a mCD corresponding to a designated pCD; and
performing a second correction for the first corrected contact holes of the processing mask pattern according to the corresponding relationships.
4. The method as claimed in claim 1, wherein the region of the contact holes of the processing mask patterns is a transparent region and the region outside the contact holes is an opaque region or a semi-transparent region.
5. A method for manufacturing a contact hole processing mask, comprising the steps of:
providing a test photo mask, wherein at least one first hole pattern is formed thereon and the first hole patterns are combinations of at least one pitch and at least one mask critical dimension (mCD);
executing an exposure and development process on a test photoresist layer using the test photo mask to form at least one second hole pattern corresponding to the first hole pattern;
measuring photoresist critical dimensions (pCDs) of the second hole patterns on the test photoresist layer;
determining correction of the mCDs for each combination of the pCDs and the pitches;
establishing a first corresponding relationships of an area and at least one actual mCD, wherein the area is a region of a mCD corresponding to a designated pCD; and
performing a first correction for at least one side of at least one contact hole of a processing mask pattern based on the correction of the mCDs; and
performing a second correction of the contact holes of the processing mask pattern according to the first corresponding relation to obtain a processing mask comprising squares of the same area as the first corrected contact holes and the same centers as the uncorrected contact holes.
6. The method as claimed in claim 5, wherein the test photo mask is divided to a plurality of regions, each of which corresponds to one of the first hole patterns, each hole pattern comprises a plurality of holes arranged in a matrix, and the holes have a designated mCD and a designated pitch therein.
7. The method as claimed in claim 5, the region of the contact holes of the processing mask patterns is a transparent region and the region outside the contact holes is an opaque region or a semi-transparent region.
8. A method for manufacturing a semiconductor device, comprising the steps of:
providing a semiconductor substrate;
coating a photoresist layer on the semiconductor substrate;
providing a processing mask having a plurality of contact holes, wherein the manufacture of the processing mask comprising the steps of:
providing a test photo mask, wherein at least one first hole pattern is formed thereon and the first hole patterns are combinations of at least one pitch and at least one mask critical dimension (mCD);
executing an exposure and development process on a test photoresist layer using the test photo mask to form at least one second hole pattern corresponding to the first hole pattern;
measuring photoresist critical dimensions (pCDs) of the second hole patterns on the test photoresist layer;
determining correction of the mCDs for each combination of the pCDs and the pitches;
performing a first correction for at least one side of at least one contact hole of a processing mask pattern based on the correction of the mCDs; and
performing a second correction of the contact holes of the processing mask pattern to obtain the processing mask, wherein the processing mask comprises squares of the contact holes, corresponding to the actual mCDs, of the same area as the first corrected contact holes and the same centers as the uncorrected contact holes; and
transferring the contact holes on the processing mask to the photorestist layer.
9. The method as claimed in claim 8, wherein the test photo mask is divided to a plurality of regions, each of which corresponds to one of the first hole patterns, each hole pattern comprises a plurality of holes arranged in a matrix, and the holes have a designated mCD and a designated pitch therein.
10. The method as claimed in claim 8, comprising the steps of:
establishing corresponding relationships of an area and at least one actual mCD, wherein the area is a region of a mCD corresponding to a designated pCD; and
performing a second correction for the first corrected contact holes of the processing mask pattern according to the corresponding relations.
11. The method as claimed in claim 8, wherein the region of the contact holes of the processing mask patterns is a transparent region and the region outside the contact holes is an opaque region or a semi-transparent region.
12. The method as claimed in claim 8, wherein the photoresist layer and the test photoresist layer on the semiconductor substrate have the same material, the same thickness, and the same processing conditions.