1. A memory device comprising:
an upper electrode;
a lower electrode; and
a memory layer,
wherein the memory layer is disposed between the upper electrode and the lower electrode and comprises an organic-inorganic complex mesoporous material having nanochannels, wherein metal nanoparticles or metal ions are within the nanochannels.
2. The memory device as set forth in claim 1, further comprising:
a barrier layer between at least one of a) the memory layer and the lower electrode and b) the memory layer and the upper electrode.
3. The memory device as set forth in claim 1, wherein the mesoporous material is formed from a composition comprising a thermally stable matrix precursor, a pore-forming material and a solvent for dissolving the matrix precursor and the pore-forming material.
4. The memory device as set forth in claim 3, wherein the thermally stable matrix precursor is a siloxane resin prepared by hydrolyzing and condensing a compound represented by Formula 1 or 2, below, and a monomer represented by Formula 5, below, using an acid catalyst and water in the presence of an organic solvent:
wherein R1 is a hydrogen atom, a C1 to C3 alkyl group, or a C6 to C15 aryl group; X1, X2 and X3 are each independently a hydrogen atom, a C1 to C3 alkyl group, a C1 to C10 alkoxy group, or a halogen atom, at least one of which is a hydrolyzable functional group; and m is an integer ranging from 0 to 10, and p is an integer ranging from 3 to 8; and
wherein R1 is a hydrogen atom, a C1 to C3 alkyl group, or a C6 to C15 aryl group; R2 is a hydrogen atom, a C1 to C10 alkyl group, or SiX1X2X3 (in which X1, X2 and X3 are each independently a hydrogen atom, a C1 to C3 alkyl group, a C1 to C10 alkoxy group, or a halogen atom); and p is an integer ranging from 3 to 8; and
RSiX1X2X3\u2003\u2003Formula 5
wherein R is a hydrogen atom, a C1 to C3 alkyl group, a C3 to C10 cycloalkyl group, a C1 to C10 alkoxy group or a C6 to C15 aryl group; X1, X2 and X3 are each independently a C1 to C3 alkyl group, a C1 to C10 alkoxy group, or a halogen atom.
5. The memory device as set forth in claim 4, wherein the thermally stable matrix precursor is a siloxane resin prepared by hydrolyzing and condensing the compound represented by Formula 1 or 2 and the monomer represented by Formula 5 at a molar ratio of 0.01:0.99 to 0.99:0.01.
6. The memory device as set forth in claim 3, wherein the pore-forming material is at least one selected from the group consisting of compounds represented by Formula 7 to 18, below:
wherein q is an integer ranging from 6 to 12, R1 to R3 are each independently a halogen atom, a C0 to C10 amino or azido group, a C3 to C20 imidazole group or pyridine group, a C1 to C10 cyano group, a C2 to C10 carbonate group, a C1 to C10 carbamate group, or a functional group represented by \u2014OR4 (in which R4 is a hydrogen atom, a halogen atom, a C2 to C30 acyl group, a C1 to C20 alkyl group, a C3 to C10 alkene group, a C3 to C20 alkyne group, a C7 to C20 tosyl group, a C1 to C10 mesyl group, a C0 to C10 amino group or azido group, a C0 to C10 phosphoryl group, a C3 to C20 imidazole group or pyridine group, a C3 to C10 cycloalkyl group, a C6 to C30 aryl group, a C1 to C20 hydroxyalkyl group or carboxyl group, a C1 to C20 carboxyalkyl group, a C6 to C12 glucosyl group or maltosyl group, a C1 to C10 cyano group, a C2 to C10 carbonate, a C1 to C10 carbamate group, or a silicon compound represented by Sir1r2r3 in which r1, r2 and r3 are each independently a C1 to C5 alkyl group, a C1 to C5 alkoxy group, or a C6 to C20 aryl group);
wherein n is an integer ranging from 3 to 10, R1 and R2 are each a crosslinked structure formed from a substituent represented by OH, SH, or NH2, R3 is a compound represented by \u2014OR4 (in which R4 is a C2 to C30 acyl group, a C1 to C20 alkyl group, a C3 to C10 cycloalkyl group, a C1 to C20 hydroxyalkyl group, a carboxy group, or a silicon (Si) compound represented by Sir1r2r3 in which r1, r2, and r3 are each independently a C1 to C5 alkyl group, a C1 to C5 alkoxy group, or a C6 to C20 aryl group);
wherein n is an integer ranging from 3 to 10, R1, and R2, are each a crosslinked structure formed from a substituent represented by OH, SH, or NH2, R3 is a compound represented by \u2014OR4 (in which R4 is a C2 to C30 acyl group, a C1 to C20 alkyl group, a C3 to C10 cycloalkyl group, a C1 to C20 hydroxyalkyl group or carboxyl group, or a compound represented by Sir1r2r3 in which r1, r2, and r3 are each independently a C1 to C5 alkyl group, a C1 to C5 alkoxy group, or a C1 to C20 aryl group);
wherein n is an integer ranging from 3 to 10, R3 is a crosslinked structure formed from a substituent represented by OH, SH, or NH2, R1 and R2 are each a compound represented by \u2014OR4 (in which R4 is a C2 to C30 acyl group, a C1 to C20 alkyl group, a C3 to C10 cycloalkyl group, a C1 to C20 hydroxyalkyl group, a C1 to C20 carboxyl group, or a silicon compound represented by Sir1r2r3 in which r1, r2, and r3 are each independently a C1 to C5 alkyl group, a C1 to C5 alkoxy group, or a C6 to C20 aryl group);
wherein n is an integer ranging from 3 to 10, R1 is a C1 to C20 alkyl group, and R2 is H, a C2 to C30 acyl group, a C1 to C20 alkyl group, a C3 to C10 cycloalkyl group, a C1 to C20 carboxy group, a C1 to C20 ester group, or a silicon (Si) compound represented by Sir1r2r3 in which r1, r2, and r3 are each independently a C1 to C5 alkyl group, a C1 to C5 alkoxy group, or a C6 to C20 aryl group);
in Formulas 12 to 14, R1, R2, R3, R4, and R5 are each independently a hydrogen atom, a C2 to C30 acyl group, a C1 to C20 alkyl group, a C3 to C10 cycloalkyl group, a C6 to C30 aryl group, a C1 to C20 hydroxyalkyl group, or a C1 to C20 carboxyalkyl group;
in Formulas 15 to 17, R1, R2, R3, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C2 to C30 acyl group, a C1 to C20 alkyl group, a C3 to C10 cycloalkyl group, a C6 to C30 aryl group, a C1 to C20 hydroxyalkyl group, or a C1 to C20 carboxyalkyl group; and
wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, and R11 are each independently a hydrogen atom, a C2 to C30 acyl group, a C1 to C20 alkyl group, a C3 to C10 cycloalkyl group, a C6 to C30 aryl group, a C1 to C20 hydroxyalkyl group, or a C1 to C20 carboxyalkyl group.
7. The memory device as set forth in claim 3, wherein the pore-forming material is at least one selected from the group consisting of silyl modified porogens, prepared by subjecting a pore-forming material having a hydroxy group at its terminal, represented by Formulas 19 to 23, below, and a halogenized silane compound represented by Formulas 24 to 27, below, to substitution reaction in the presence of an amine base catalyst:
in Formula 19 to 23, l is an integer ranging from 2 to 200, m is an integer ranging from 20 to 80, n is an integer ranging from 2 to 200, and q is an integer ranging from 5 to 8;
in Formulas 24 to 27, R is independently a hydrogen atom, a C2 to C30 acyl group, a C1 to C5 alkyl group or a C3 to C6 cycloalky group, X is a halogen atom comprising a fluorine (F) atom, a chlorine (Cl), a bromine (Br) atom, or an iodine (I) atom, l is an integer ranging from 0 to 3, m is an integer ranging from 0 to 3, and n is an integer ranging from 1 to 10.
8. The memory device as set forth in claim 3, wherein the pore-forming material is present in an amount of 0.1 to 95 wt % of the composition.
9. The memory device as set forth in claim 3, wherein the solvent is present in an amount of 20 to 99.9 wt % of the composition.
10. The memory device as set forth in claim 3, wherein the solvent is selected from the group consisting of aromatic hydrocarbons, ketones, ethers, acetates, amides, \u03b3-butyrolactones, alcohols, silicon solvents, and mixtures thereof.
11. The memory device as set forth in claim 3, wherein the mesoporous material is formed by applying the composition on the lower electrode via spin coating, dip coating, spray coating, flow coating or screen printing, evaporating the solvent, and heating the applied composition at 150-600\xb0 C. in an inert gas atmosphere or in a vacuum atmosphere.
12. The memory device as set forth in claim 1, wherein the nanochannels have a size ranging from 0.5 to 100 nm.
13. The memory device as set forth in claim 1, wherein the memory layer has a thickness ranging from 10 nm to 100 \u03bcm.
14. The memory device as set forth in claim 1, wherein the metal nanoparticles or metal ions are nanoparticles or ions of a metal selected from the group consisting of aluminum, gold, silver, platinum, and indium tin oxide.
15. The memory device as set forth in claim 1, wherein the metal nanoparticles or metal ions are fed into the nanochannel using thermal deposition.
16. The memory device as set forth in claim 15, wherein the memory device comprises a barrier layer between the memory layer and the upper electrode, and the metal nanoparticles or metal ions are fed into the nanochannel via metal diffusion while the upper electrode is deposited using thermal deposition.
17. The memory device as set forth in claim 2, wherein the barrier layer comprises a material selected from the group consisting of a conducting polymer, a nonconducting polymer, a mesoporous material different from that used in the memory layer, and an organic monomer or inorganic material able to form a thin film using vacuum deposition.
18. The memory device as set forth in claim 16, wherein the barrier layer comprises a material selected from the group consisting of a conducting polymer, a nonconducting polymer, a mesoporous material different from that used in the memory layer, and an organic monomer or inorganic material able to form a thin film using vacuum deposition.
19. The memory device as set forth in claim 17, wherein the conducting polymer comprises at least one homopolymer or copolymer selected from the group consisting of poly(n-vinylpyridine), poly(dimethylsiloxane), poly(ethylene-oxide), poly(acrylic acid), poly(methylacrylic acid), poly(styrene-sulfonic acid), poly(cyclopentadienylmethyl-norbornene), and poly(amino acid);
the nonconducting polymer comprises at least one homopolymer or copolymer selected from the group consisting of polymethylmethacrylate (PMMA), polystyrene (PS), polyimide (PI), and polycarbonate (PC);
the mesoporous material different from that used in the memory layer comprises any one selected from the group consisting of thin films prepared by using siloxane or silsesquioxane as a matrix and using cyclodextrin, calix arene, or dendrimer as a pore-forming material, and thin films prepared by using silica or a triblock copolymer of polyethyleneoxide-polypropyleneoxide-polyethyleneoxide (PEO-PPO-PEO) as a matrix and using a surfactant as a pore-forming material; and
the organic monomer able to form a thin film using vacuum deposition comprises acetylene, Alq3 (8-hydroxyquinoline aluminum), or TPD (N,N-diphenyl-N,N\u2032-bis(3-methylphenyl)1,1\u2032-biphenyl-4,4\u2032-diamine).
20. The memory device as set forth in claim 18, wherein the conducting polymer comprises at least one homopolymer or copolymer selected from the group consisting of poly(n-vinylpyridine), poly(dimethylsiloxane), poly(ethylene-oxide), poly(acrylic acid), poly(methylacrylic acid), poly(styrene-sulfonic add), poly(cyclopentadienylmethyl-norbornene), and poly(amino add);
the nonconducting polymer comprises at least one homopolymer or copolymer selected from the group consisting of polymethylmethacrylate (PMMA), polystyrene (PS), polyimide (PI), and polycarbonate (PC);
the mesoporous material different from that used in the memory layer comprises any one selected from the group consisting of thin films prepared by using siloxane or silsesquioxane as a matrix and using cyclodextrin, calix arene, or dendrimer as a pore forming material, and thin films prepared by using silica or a triblock copolymer of polyethyleneoxide-polypropyleneoxide-polyethyleneoxide (PEO-PPO-PEO) as a matrix and using a surfactant as a pore-forming material; and
the organic monomer able to form a thin film using vacuum deposition comprises acetylene, Alq3 (8-hydroxyquinoline aluminum), or TPD (N,N-diphenyl-N,N\u2032-bis(3-methylphenyl)-1,1\u2032-biphenyl-4,4\u2032-diamine).
21. The memory device as set forth in claim 2, wherein the barrier layer has a thickness ranging from 0.1 to 100 nm.
22. The memory device as set forth in claim 16, wherein the barrier layer has a thickness ranging from 0.1 to 100 nm.
23. The memory device as set forth in claim 1, wherein the upper and lower electrodes comprise, independently, at least one material selected from the group consisting of metals, metal alloys, metal nitrides, metal oxides, metal sulfides, carbon, conducting polymers, and organic conductors.
24. The memory device as set forth in claim 23, wherein the metal is selected from the group consisting of aluminum, gold, silver, platinum, and indium tin oxide.
25. A method of manufacturing an organic memory device comprising an upper electrode, a lower electrode and a memory layer disposed between the upper electrode and the lower electrode, the method comprising:
applying a mesoporous material comprising a thermally stable matrix precursor, a pore-forming material and a solvent for dissolving the precursor and the pore-forming material on a lower electrode, to form a memory layer comprising nanochannels;
feeding metal nanoparticles or metal ions into the nanochannels; and
depositing an upper electrode on the memory layer.
26. The method as set forth in claim 25, wherein the feeding of the metal nanoparticles or metal ions is simultaneously performed via diffusion of the metal nanoparticles or metal ions into the nanochannels of the memory layer when depositing the upper electrode using thermal deposition.
27. The method as set forth in claim 25, further comprising forming a barrier layer between at least one of a) the lower electrode and the memory layer and b) the memory layer and the upper electrode.
28. The method as set forth in claim 26, further comprising forming a barrier layer between at least one of a) the lower electrode and the memory layer and b) the memory layer and the upper electrode.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method for creating a proof of possession confirmation for inclusion by a certification authority into a digital certificate, the digital certificate for use by an end user, the method comprising:
receiving, from the certification authority in response to a certificate request by the end user, a plurality of data fields corresponding to a target host system, the identity of the end user, and a proof of identity possession by the end user;
analyzing the content of said plurality of data fields;
verifying the accuracy of said plurality of data fields; and
if said plurality of data fields is verified as accurate, sending a signed object to the certification authority, said signed object comprising the proof of possession confirmation.
2. The method of claim 1, wherein said plurality of data fields further comprises:
a host name;
a subject identification;
a subject public key information; and
a sealed proof of possession.
3. The method of claim 2, wherein analyzing the content of said plurality of data fields further comprises:
decrypting a proof of possession structure from said sealed proof of possession;
extracting a password from said sealed proof of possession structure;
extracting a key identifier from said proof of possession structure; and
calculating a correct key identifier from said subject public key information.
4. The method of claim 3, wherein the accuracy of said plurality of data fields is verified if:
said host name is matched with an identity of said target host system;
said extracted password is validated as a valid password for the end user; and
said extracted key identifier is matched with said correct key identifier calculated from said subject public key information.
5. The method of claim 3, wherein said extracted password and said extracted key identifier are initially symmetrically encrypted.
6. The method of claim 3, wherein said extracted password and said extracted key identifier are initially asymmetrically encrypted.
7. The method of claim 1, wherein:
said plurality of data fields includes a password; and
said signed object does not include said password.
8. A storage medium encoded with a machine readable computer program code for creating a proof of possession confirmation for inclusion by a certification authority into a digital certificate, the digital certificate for use by an end user, the storage medium including instructions for causing a computer to implement a method, the method comprising:
receiving, from the certification authority in response to a certificate request by the end user, a plurality of data fields corresponding to a target host system, the identity of the end user, and a proof of identity possession by the end user;
analyzing the content of said plurality of data fields;
verifying the accuracy of said plurality of data fields; and
if said plurality of data fields is verified as accurate, sending a signed object to the certification authority, said signed object comprising the proof of possession confirmation.
9. The storage medium of claim 8, wherein said plurality of data fields further comprises:
a host name;
a subject identification;
a subject public key information; and
a sealed proof of possession.
10. The storage medium of claim 9, wherein analyzing the content of said plurality of data fields further comprises:
decrypting a proof of possession structure from said sealed proof of possession;
extracting a password from said sealed proof of possession structure;
extracting a key identifier from said proof of possession structure; and
calculating a correct key identifier from said subject public key information.
11. The storage medium of claim 10, wherein the accuracy of said plurality of data fields is verified if:
said host name is matched with an identity of said target host system;
said extracted password is validated as a valid password for the end user; and
said extracted key identifier is matched with said correct key identifier calculated from said subject public key information.
12. The storage medium of claim 10, wherein said extracted password and said extracted key identifier are initially symmetrically encrypted.
13. The storage medium of claim 10, wherein said extracted password and said extracted key identifier are initially asymmetrically encrypted.
14. The storage medium of claim 8, wherein:
said plurality of data fields includes a password; and
said signed object does not include said password.
15. A computer data signal for creating a proof of possession confirmation for inclusion by a certification authority into a digital certificate, the digital certificate for use by an end user, the computer data signal comprising code configured to cause a processor to implement a method, the method comprising:
receiving, from the certification authority in response to a certificate request by the end user, a plurality of data fields corresponding to a target host system, the identity of the end user, and a proof of identity possession by the end user;
analyzing the content of said plurality of data fields;
verifying the accuracy of said plurality of data fields; and
if said plurality of data fields is verified as accurate, sending a signed object to the certification authority, said signed object comprising the proof of possession confirmation.
16. The computer data signal of claim 15, wherein said plurality of data fields further comprises:
a host name;
a subject identification;
a subject public key information; and
a sealed proof of possession.
17. The computer data signal of claim 16, wherein analyzing the content of said plurality of data fields further comprises:
decrypting a proof of possession structure from said sealed proof of possession;
extracting a password from said sealed proof of possession structure;
extracting a key identifier from said proof of possession structure; and
calculating a correct key identifier from said subject public key information.
18. The computer data signal of claim 17, wherein the accuracy of said plurality of data fields is verified if:
said host name is matched with an identity of said target host system;
said extracted password is validated as a valid password for the end user; and
said extracted key identifier is matched with said correct key identifier calculated from said subject public key information.
19. The computer data signal of claim 17, wherein said extracted password and said extracted key identifier are initially symmetrically encrypted.
20. The computer data signal of claim 17, wherein said extracted password and said extracted key identifier are initially asymmetrically encrypted.
21. The computer data signal of claim 15, wherein:
said plurality of data fields includes a password; and
said signed object does not include said password.