1. A method for fabricating a solid electrolyte memory element, comprising:
providing a first electrode;
coating the first electrode with a solid electrolyte layer comprising a solid electrolyte matrix having a targeted defect formation in the solid electrolyte matrix, the targeted defect formation having been intentionally formed by a controlled defect formation process; and
applying a second electrode on the solid electrolyte layer.
2. The method of claim 1, wherein the targeted defect formation in the solid electrolyte matrix is brought about during the coating operation by means of an additional defect formation process.
3. The method of claim 1, wherein the targeted defect formation in the solid electrolyte matrix is brought about after the coating operation by means of an additional defect formation process.
4. The method of claim 1, wherein the targeted defect formation in the solid electrolyte matrix is effected by particle irradiation.
5. The method of claim 1, wherein the targeted defect formation in the solid electrolyte matrix is effected by ion irradiation.
6. The method of claim 5, wherein the ion irradiation is effected with a dose of more than 1014cm2.
7. The method of claim 5, wherein the ion irradiation is effected with a dose of more than 1015cm2.
8. The method of claim 5, wherein one or more active ions selected from boron, arsenic, oxygen and phosphorus are used for the ion irradiation.
9. The method of claim 5, wherein one or more passive ions selected from nitrogen and noble gases are used for the ion irradiation.
10. The method of claim 5, wherein the ion irradiation is carried out at energy values of between about 1 keV and about 150 keV.
11. The method of claim 4, wherein the particle irradiation brings about a vacancy concentration in the solid electrolyte matrix of greater than about 10\u22128.
12. The method of claim 4, wherein the particle irradiation produces a porous microstructure with vacancy agglomerates in the solid electrolyte layer having a diameter of at least 1 nm.
13. The method of claim 1, further comprising:
performing a thermal treatment after coating the first electrode with the solid electrolyte layer with targeted defect formation in the solid electrolyte matrix.
14. The method of claim 1, further comprising:
performing a thermal treatment during the step of coating the first electrode with the solid electrolyte layer with targeted defect formation in the solid electrolyte matrix.
15. The method of claim 1, further comprising:
performing a laser treatment after coating the first electrode with the solid electrolyte layer with targeted defect formation in the solid electrolyte matrix.
16. The method of claim 1, further comprising:
performing a laser treatment during the step of coating the first electrode with the solid electrolyte layer with targeted defect formation in the solid electrolyte matrix.
17. The method of claim 1, further comprising:
driving-in metal ions into the solid electrolyte layer after coating the first electrode with the solid electrolyte layer with targeted defect formation in the solid electrolyte matrix.
18. The method of claim 1, wherein a sputtering process is utilized for coating the first electrode with the solid electrolyte layer.
19. The method of claim 1, wherein a chemical vapor deposition (CVD) process is utilized for coating the first electrode with the solid electrolyte layer.
20. The method of claim 1, wherein an atomic layer deposition (ALD) process is utilized for coating the first electrode with the solid electrolyte layer.
21. A method for fabricating a solid electrolyte memory element, comprising:
providing a first electrode;
coating the first electrode with a solid electrolyte layer comprising an at least partly crystalline solid electrolyte material having a targeted defect formation in the at least partly crystalline solid electrolyte material, the targeted defect formation having been intentionally formed by a controlled defect formation process; and
applying a second electrode on the solid electrolyte layer.
22. The method of claim 21, wherein the targeted defect formation in the solid electrolyte material is brought about during the coating operation by means of a defect formation process.
23. The method of claim 21, wherein the targeted defect formation in the solid electrolyte material is brought about after the coating operation by means of a defect formation process.
24. The method of claim 21, wherein the targeted defect formation in the solid electrolyte material is effected by particle irradiation.
25. The method of claim 21, wherein the targeted defect formation in the solid electrolyte material is effected by ion irradiation.
26. The method of claim 25, wherein the ion irradiation is effected with a dose of more than 1014cm2.
27. The method of claim 25, wherein the ion irradiation is effected with a dose of more than 1015cm2.
28. The method of claim 25, wherein one or more active ions selected from boron, arsenic, oxygen and phosphorus are used for the ion irradiation.
29. The method of claim 25, wherein one or more passive ions selected from nitrogen and noble gases are used for the ion irradiation.
30. The method of claim 25, wherein the ion irradiation is carried out at energy values of between about 1 keV and about 150 keV.
31. The method of claim 24, wherein the particle irradiation brings about a vacancy concentration in the at least partly crystalline solid electrolyte material of greater than about 10\u22128.
32. The method of claim 24, wherein the particle irradiation produces a porous microstructure with vacancy agglomerates in the at least crystalline solid electrolyte material having a diameter of at least 1 nm.
33. The method of claim 21, further comprising:
performing a thermal treatment after coating the first electrode with the solid electrolyte layer with targeted defect formation in the at least partly crystalline solid electrolyte material.
34. The method of claim 21, further comprising:
performing a thermal treatment during the step of coating the first electrode with the solid electrolyte layer with targeted defect formation in the at least partly crystalline solid electrolyte material.
35. The method of claim 21, further comprising:
performing a laser treatment after coating the first electrode with the solid electrolyte layer with targeted defect formation in the at least partly crystalline solid electrolyte material.
36. The method of claim 21, further comprising:
performing a laser treatment during the step of coating the first electrode with the solid electrolyte layer with targeted defect formation in the at least partly crystalline solid electrolyte material.
37. The method of claim 21, further comprising:
driving-in metal ions into the solid electrolyte layer after coating the first electrode with the solid electrolyte layer with targeted defect formation in the at least partly crystalline solid electrolyte material.
38. The method of claim 21, wherein a sputtering process is utilized for coating the first electrode with the solid electrolyte layer.
39. The method of claim 21, wherein a chemical vapor deposition (CVD) process is utilized for coating the first electrode with the solid electrolyte layer.
40. The method of claim 21, wherein an atomic layer deposition (ALD) process is utilized for coating the first electrode with the solid electrolyte layer.
41. A solid electrolyte memory element, comprising:
an inert cathode electrode;
a reactive anode electrode; and
a solid electrolyte layer disposed between the inert cathode electrode and the reactive anode electrode, wherein the solid electrolyte layer comprises a solid electrolyte matrix having defect sites intentionally formed by a controlled defect formation process.
42. The solid electrolyte memory element of claim 41, wherein the solid electrolyte layer comprises a chalcogenide-containing compound.
43. The solid electrolyte memory element of claim 41, wherein the solid electrolyte layer comprises an oxide.
44. The solid electrolyte memory element of claim 41, wherein the reactive anode electrode comprises Cu.
45. The solid electrolyte memory element of claim 41, wherein the reactive anode electrode comprises Ag.
46. The solid electrolyte memory element of claim 41, wherein a vacancy concentration in the solid electrolyte layer is greater than about 10\u22128.
47. A solid electrolyte memory element, comprising:
an inert cathode electrode;
a reactive anode electrode; and
a solid electrolyte layer disposed between the inert cathode electrode and the reactive anode electrode, wherein the solid electrolyte layer comprises an at least partly crystalline solid electrolyte matrix with defect sites intentionally formed by a controlled defect formation process.
48. The solid electrolyte memory element of claim 47, wherein the at least partly crystalline solid electrolyte layer comprises a chalcogenide-containing compound.
49. The solid electrolyte memory element of claim 47, wherein the at least partly crystalline solid electrolyte layer comprises an oxide.
50. The solid electrolyte memory element of claim 47, wherein the reactive anode electrode comprises Cu.
51. The solid electrolyte memory element of claim 47, wherein the reactive anode electrode comprises Ag.
52. The solid electrolyte memory element of claim 47, wherein a vacancy concentration in the solid electrolyte layer is greater than about 10\u22128.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A compound of Formula I or a pharmaceutically acceptable derivative, salt or prodrug thereof wherein:
L1-R1 is hydrogen or is a substituent wherein
L1 is selected from the group consisting of Z, C1-3alkylene, >C\u2550Z, \u2014CZ2\u2014, \u2014C(\u2550Z)C1-3alkylene, \u2014CZ2\u2014C1-3alkylene, \u2014C1-3alkylene-C(\u2550Z)\u2014, \u2014C1-3alkylene-CZ2\u2014 wherein each Z is independently selected from O, S, and NH;
each R1 is independently selected from the group consisting of hydrogen, C1-10alkyl wherein one or more of the carbon atoms of the alkyl chain may optionally be replaced with oxygen atoms, C1-10alkylNR3R4, halo, NR3R4, alkylaryl, alkylheteroaryl, a 4-7 membered lactam, S(O)NR3R4, SO2NR3R4, SO2C1-10alkyl, C5-10cycloalkyl wherein one or more of the carbon atoms of the cycloalkyl ring are replaced with one or more oxygen atoms;
R3 and R4 are each independently selected from the group consisting of hydrogen, C1-10alkyl, C3-6cycloalkyl, C1-10NR5R6, \u2014(CO)(CO)NR5R6; or R3 and R4 taken together with the attached nitrogen form a 5-7 membered heterocyclic ring which contains zero to two additional heteroatoms selected from N, O or S where S can be at the S, S(O) or S(O)2 oxidation state and wherein said heterocyclic ring is optionally substituted at the carbon or nitrogen atoms with one or more substituents selected from halo, C1-4alkyl, CO2C1-4alkyl, NR5R6; C1-4alkylNR5R6 and further wherein two carbons of said 5-7 membered heterocyclic ring may optionally be bridged by a C1-3 alkylene bridging group;
R5 and R6 are each independently selected from the group consisting of H and C1-4alkyl or R5 and R6 together with the attached nitrogen form a 5-7 membered heterocyclic ring which contains zero to two additional heteroatoms selected from N, O or S where S can be at the S, S(O) or S(O)2 oxidation state and wherein said heterocyclic ring is optionally substituted at the carbon or nitrogen atoms with one or more substituents selected from halo and C1-4alkyl and further wherein two carbons of said 5-7 membered heterocyclic ring may optionally be bridged by a C1-3 alkylene bridging group;
L4-R11 is 0-2 substituents wherein:
each L4 is independently absent or is selected from the group consisting of Z, C1-3alkylene, >C\u2550Z, \u2014CZ2\u2014, \u2014C(\u2550Z)C1-3alkylene, \u2014CZ2\u2014C1-3alkylene, \u2014C1-3alkylene-C(\u2550Z)\u2014, \u2014C1-3alkylene-CZ2\u2014 wherein each Z is independently selected from O, S, and NH;
each R11 is independently selected from the group consisting of hydrogen, C1-10alkyl wherein one or more of the carbon atoms of the alkyl chain may optionally be replaced with oxygen atoms, C1-10alkyl where one of the carbon atoms is replaced by S in the S, S(O), or S(O)2 oxidation state, C1-10alkylNR3R4, halo, NR3R4, alkylaryl, S(O)NR3R4, SO2NR3R4, SO2C1-10alkyl, and C5-10cycloalkyl wherein one or more of the carbon atoms of the cycloalkyl ring are replaced with one or more oxygen atoms;
when R11 is alkylaryl, the aryl group of said alkylaryl substituent is optionally substituted with a substituent selected from C1-10alkyl, \u2014O\u2014C1-10alkyl, C1-10alkylNR3R4, \u2014O\u2014C1-10alkylNR3R4, halo, NR3R4, alkylaryl, \u2014O-alkylaryl, SO2NR3R4
H1 is a selected from the group consisting of \u2014C(\u2550O)NH\u2014 and a 5- or 6-membered saturated, partially saturated or aromatic ring containing between 1 and 4 heteroatoms wherein each heteroatom is independently selected from the group consisting of N, O and S;
L2-R7 is 0-2 substituents wherein:
each L2 is independently absent or is group consisting of Z, C1-3alkylene, >C\u2550Z, \u2014CZ2\u2014, \u2014C(\u2550Z)C1-3alkylene, \u2014CZ2\u2014C1-3alkylene, \u2014C1-3alkylene-C(\u2550Z)\u2014, \u2014C1-3alkylene-CZ2\u2014 wherein each Z is independently selected from O, S, and NH;
each R7 is independently selected from the group consisting of hydrogen, C1-10alkyl wherein one or more of the carbon atoms of the alkyl chain may optionally be replaced with oxygen atoms, C1-10alkylNR3R4, halo, NR3R4, alkylaryl, S(O)NR3R4, SO2NR3R4, SO2C1-10alkyl, and C5-10cycloalkyl wherein one or more of the carbon atoms of the cycloalkyl ring are replaced with one or more oxygen atoms;
X is CR8R8\u2032
each of R8 and R8\u2032 is independently selected from the group consisting of H and CH3, preferably H;
H2 is a 5- or 6-membered saturated, partially saturated or aromatic ring containing between 0 and 4 heteroatoms independently selected from the group consisting of N, O and S;
L3-R9 is 0-3 substituents wherein:
each L3 is independently absent or is selected from the group consisting of Z, C1-3alkylene, >C\u2550Z, \u2014CZ2\u2014, \u2014C(\u2550Z)C1-3alkylene, \u2014CZ2\u2014C1-3alkylene, \u2014C1-3alkylene-C(\u2550Z)\u2014, \u2014C1-3alkylene-CZ2\u2014 wherein each Z is independently selected from O, S, and NH;
each R9 is independently selected from the group consisting of hydrogen, C1-10alkyl wherein one or more of the carbon atoms of the alkyl chain may optionally be replaced with oxygen atoms, C1-10alkylNR3R4, halo, NR3R4, heterocyclyl, heteroaryl, alkylaryl, S(O)NR3R4, SO2NR3R4, SO2C1-10alkyl, and C5-10cycloalkyl wherein one or more of the carbon atoms of the cycloalkyl ring are replaced with one or more oxygen atoms.
2. A compound according to claim 1 wherein L1 is CH2(C\u2550O)\u2014 and R1 is selected from the group consisting of N-piperidine, N-piperazine, N,N\u2032-methyl-piperazine, and morpholino wherein each R1 is optionally substituted at the carbon or nitrogen atoms with one or two methyl groups.
3. A compound according to claim 1 wherein H1 is a five membered aromatic heterocycle selected from the group consisting of thiazole, oxazole, oxadiazole, thiadiazole, imidazole, triazole, and tetrazole.
4. A compound according to claim 3 wherein H1 is thiazole.
5. A compound according to claim 1 wherein H2 is phenyl.
6. A compound according to claim 1 wherein L4-R11 is one substituent wherein L4 is absent or is \u2014CH2\u2014 and R11 is NR3R4.
7. A compound according to claim 1 wherein L3-R9 is at least 2 substituents wherein the first L3-R9 is halo and in the second L3-R9, L3 is absent or is selected from >C\u2550O and R9 is selected from the group consisting of halo, NR3R4 and SO2NR3R4.
8. A compound according to claim 1 wherein L3-R9 is one substituent and is halo.
9. A compound according to claim 1 wherein at least one NR3R4 is independently selected from the group consisting of morpholino, a five-membered cyclic sulphonamide (such as isothiazolidine) and a six membered cyclic sulphonamide.
10. A compound according to claim 1 wherein the group \u201cC1-10alkyl where one of the carbon atoms is replaced by S in the S, S(O), or S(O)2 oxidation state\u201d is methylsulfanylmethyl or methylsulfonylmethyl.
11. A compound according to claim 1, wherein when H1 is
\u2014C(\u2550O)NH\u2014, then L1-R1 is not hydrogen and L4-R11 is at least one substituent.
12. A compound according claim 1, wherein when H1 is
\u2014C(\u2550O)NH\u2014, then L4-R11 is a cyclic sulphonamide.
13. A compound according to claim 1 wherein the compound is selected from the group consisting of:
14. A method of treatment or prophylaxis of a viral infection in a subject comprising administering to said subject an effective amount of a compound according to claim 1 or a pharmaceutically acceptable derivative, salt or prodrug thereof.
15. (canceled)
16. The method according to claim 14 wherein the viral infection is a HIV or SIV infection.
17. The method according to claim 16 wherein the HIV or SIV infection comprises a viral strain resistant to other integrase inhibitors such as Isentrass (raltregavir, MK-0158) or elvitegravir.
18. The method or use according to claim 16 wherein the viral strain comprises HIV integrase enzyme containing the Q148HG140S double mutation, N155HE92Q double mutation, the F121YT124K double mutation or the Q148KG140AE138A triple mutation.
19. A pharmaceutical composition comprising a compound according to claim 1 and a pharmaceutically acceptable carrier, diluent or excipient.