1. A circuit comprising:
a bulk silicon integrated circuit (IC);
a first metallization layer that is arranged adjacent to said bulk silicon IC;
phase change memory (PCM) that is arranged adjacent to said first metallization layer and that comprises a plurality of PCM cells, each PCM cell including:
a phase-change material,
a heater that selectively heats said phase-change material, and
a diode in series with said phase-change material, wherein said diode includes crystallized islands that are crystallized using a seeding metal layer and that are crystallized from an amorphous silicon layer that is deposited over said first metallization layer; and
a conductive barrier material arranged between said first metallization layer and said diode.
2. A circuit comprising:
a bulk silicon integrated circuit (IC);
a first metallization layer that is arranged adjacent to said bulk silicon IC; and
phase change memory (PCM) that is arranged adjacent to said first metallization layer and that comprises a plurality of PCM cells, each PCM cell including:
a phase-change material,
a heater that selectively heats said phase-change material, and
a diode in series with said phase-change material,
wherein said diode includes crystallized islands chat are crystallized using a seeding metal layer and chat are crystallized from an amorphous silicon layer that is deposited over said first metallization layer, and
wherein said first metallization layer comprises copper.
3. The circuit of claim 1 wherein said barrier material comprises titanium nitride.
4. A circuit comprising:
a bulk silicon integrated circuit (IC);
a first metallization layer that is arranged adjacent to said bulk silicon IC; and
phase change memory (PCM) that is arranged adjacent to said first metallization layer and that corn rises a plurality of PCM cells, each PCM cell including:
a phase-change material,
a heater that selectively heats said phase-change material, and
a diode in series with said phase-change material,
wherein said diode includes crystallized islands chat are crystallized using a seeding metal layer and chat are crystallized from an amorphous silicon layer that is deposited over said first metallization layer, and
wherein said seeding metal layer comprises nickel.
5. A circuit comprising:
a bulk silicon integrated circuit (IC);
a first metallization layer that is arranged adjacent to said bulk silicon IC; and
phase change memory (PCM) that is arranged adjacent to said first metallization layer and that comprises a plurality of PCM cells, each PCM cell including:
a phase-change material,
a heater that selectively heats said phase-change material, and
a diode in series with said phase-change material, wherein said diode includes crystallized islands that are crystallized using a seeding metal layer and that are crystallized from an amorphous silicon layer that is deposited over said first metallization layer,
wherein said diode comprises an n-type layer,
wherein said seeding metal layer crystallizes said n-type layer, and
wherein said diode comprises a metal layer arranged adjacent to said n-type layer.
6. The circuit of claim 5 wherein said metal layer comprises titanium.
7. A system comprising:
a circuit comprising:
a bulk silicon integrated circuit (IC),
a first metallization layer that is arranged adjacent to said bulk silicon IC, and
phase change memory (PCM) that is arranged adjacent to said first metallization layer and that comprises a plurality of PCM cells, each PCM cell including;
a phase-change material,
a heater that selectively heats said phase-change material, and
a diode in series with said phase-change material, wherein said diode includes crystallized islands that are crystallized using a seeding metal layer and that are crystallized from an amorphous silicon layer that is deposited over said first metallization layer; and
a non-memory circuit that includes said first metallization layer, wherein said PCM is integrated with said non-memory circuit, and wherein said diode thermally communicates with said first metallization layer.
8. A system comprising:
a circuit comprising:
a bulk silicon integrated circuit (IC),
a first metallization layer that is arranged adjacent to said bulk silicon IC, and
phase change memory (PCM) that is arranged adjacent to said first metallization layer and that comprises a plurality of PCM cells, each PCM cell including
a phase-change material,
a heater that selectively heats said phase-change material, and
a diode in series with said phase-change material, wherein said diode includes crystallized islands that are crystallized using a seeding metal layer and that are crystallized from an amorphous silicon layer that is deposited over said first metallization layer; and
a memory circuit that includes said first metallization layer, wherein said PCM is integrated with said memory circuit, and wherein said diode thermally communicates with said first metallization layer.
9. A circuit comprising:
a bulk silicon integrated circuit (IC);
a first metallization layer that is arranged adjacent to said bulk silicon IC; and
phase change memory (PCM) that is arranged adjacent to said first metallization layer and that comprises a plurality of PCM cells, each PCM cell including:
a phase-change material,
a heater that selectively heats said phase-change material, and
a diode in series with said phase-change material,
wherein said diode includes crystallized islands that are crystallized using a seeding metal layer and that are crystallized from an amorphous silicon layer that is deposited over said first metallization layer, and
wherein N bits of user data are stored in each of said plurality of PCM cells, where N is an integer greater than one.
10. A circuit comprising:
a bulk silicon integrated circuit (IC);
a first metallization layer that is arranged adjacent to said bulk silicon IC; and
phase change memory (PCM) that is arranged adjacent to said first metallization layer and that cormprises a plurality of PCM cells, each PCM cell including:
a phase-change material,
a heater that selectively heats said phase-change material, and
a diode in series with said phase-change material, wherein said diode includes crystallized islands that are crystallized using a seeding metal layer and that are crystallized from an amorphous silicon layer that is deposited over said first metallization layer,
wherein said heater includes a resistive material partially surrounding a dielectric material,
wherein said resistive material and said dielectric material form a first planar surface, and
wherein said phase-change material includes a second planar surface arranged adjacent to said first planar surface of said heater element.
11. The circuit of claim 10,
wherein said first metallization layer includes a first side and a second side,
wherein said bulk silicon IC comprises a transistor that is adjacent to said first side of said first metallization layer, and
wherein said diode is arranged adjacent to said second side of said first metallization layer.
12. The circuit of claim 5 wherein said metal layer of said diode is arranged between said n-type silicon layer and said heater.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for downloading data to a client using dynamic intelligent mirror selection of mirrors from a plurality of mirrors in a network, the method comprising:
assigning, using a microprocessor at said client, a first quality value to each of said plurality of mirrors based on one or more characteristics regarding said plurality of mirrors, said one or more characteristics including, at least, a number of times a mirror has been used to download data to said client, wherein said quality value comprises a usage bonus based on said number of times a mirror has been used to download data to said client, wherein a mirror that has been used a fewer number of times receives a larger usage bonus than a mirror that has been used a greater number of times, wherein said plurality of mirrors comprise identical portions of data for downloading;
selecting a first mirror from said plurality of mirrors based on said first quality value of said first mirror;
first downloading a first portion of said data from said first mirror;
assigning, using a microprocessor at said client, a second quality value to each of said plurality of mirrors based on said one or more characteristics regarding said plurality of mirrors including one or more characteristics of said first mirror observed during said first downloading;
selecting at said client a second mirror from said plurality of mirrors based on said second quality value of said second mirror; and
second downloading a second portion of said data from said second mirror.
2. The method of claim 1, wherein said one or more characteristics regarding said plurality of mirrors comprise characteristics of said plurality of mirrors observed during previous downloads of data from said plurality of mirrors.
3. The method of claim 2, wherein said assigning further comprises allotting each mirror of said plurality of mirrors a random bonus value, wherein said random bonus value provides disparity in quality values between similarly situated mirrors.
4. The method of claim 2, wherein said one or more characteristics comprise an error count, and wherein a mirror is penalized for each error in said error count.
5. The method of claim 4, wherein data errors are penalized more than transient network errors.
6. The method of claim 2, wherein said one or more characteristics comprises a mirror load value, and wherein said method further includes randomly penalizing a mirror once a threshold mirror load value is observed.
7. The method of claim 2, wherein said one or more characteristics comprises a transfer speed between a mirror and said client.
8. The method of claim 7, wherein said transfer speed comprises normalizing said speed of connection of a mirror with respect to a transfer speed of an origin.
9. The method of claim 2, wherein a decay value is applied to said one or more characteristics based upon an amount of time since said one or more characteristics were observed, and wherein said decay value is greatest for the oldest observed characteristics.
10. The method of claim 1 wherein once a mirror is used a predetermined number of times said usage bonus goes to zero.
11. The method of claim 1, wherein said first mirror and said second mirror are different.
12. The method of claim 1, wherein said method is repeated until all of said data is downloaded.
13. A computer-based system for downloading a data set using dynamic intelligent mirror selection of mirrors from a plurality of mirrors in a network, the system comprising:
an interface module operative to communicate with said plurality of mirrors;
a mirror characteristic storage module in operative communication with said interface module and operative to store, in a storage device, one or more characteristics of each of said plurality of mirrors based on observation of communication between said mirrors and said interface module said one or more characteristics including, at least, a number of times a mirror has been used to download data to said client;
a mirror quality calculation module, including a microprocessor, in operative communication with said mirror characteristic storage module and operative to calculate a quality value for each of said plurality of mirrors based on said one or more characteristics of said plurality of mirrors, wherein said calculating comprises allotting a usage bonus based on said number of times a mirror has been used to download data to said client, wherein a mirror that has been used a fewer number of times receives a larger usage bonus than a mirror that has been used a greater number of times; and
a mirror comparison module in operative communication with said mirror quality calculation module to receive said quality values for each of said plurality of mirrors, wherein said mirror comparison module is operative to designate to said interface module a mirror selection of one of the plurality of mirrors based on said quality values of the plurality of mirrors from which said interface module is to download data;
wherein said computer-based system operates to dynamically update said mirror selection based on transient network conditions after downloading a portion of said data set.
14. The system of claim 13, wherein said mirror characteristic storage module is operative to store characteristics for said plurality of mirrors observed at a plurality of instances.
15. The system of claim 13, wherein said system is operative to download a plurality of data portions from a plurality of mirrors, and said mirror comparison module is operative to designate to said interface module a mirror selection after the download of each of said plurality of data portions.