1. A method of forming a semiconductor device, the method comprising:
providing a substrate;
forming a gate stack at each device location on said substrate, the gate stack including a metal gate conductor on a gate dielectric layer disposed on a device channel;
forming a gate spacer extending from the substrate about the sides of the gate stack, the thickness of said gate spacer being as thick as said gate stack;
forming sourcedrain regions adjacent said gate spacer at each end of said gate stack;
forming silicide regions on each of said sourcedrain regions;
depositing a stress liner comprising a nitride layer on said substrate overlying the metal gate and extending from said substrate between the gate spacers, said stress liner separating each silicide region at said substrate from a respective said gate spacer;
forming a dielectric layer over said stress liner, the combined thickness of said dielectric layer and said stress liner over said gate stack and said silicide regions being at least 3 times as tall as said gate stack; and
forming contacts through said combined thickness to said metal gate and the silicide regions, each gate contact being above said device channel and narrower than said gate stack.
2. The method of claim 1, wherein the gate dielectric comprises a high-k dielectric.
3. The method of claim 1, wherein the gate spacer comprises a nitride.
4. The method of claim 1, further comprising filling the space between the upper portion of the gate spacer and the gate contact with an insulator.
5. The method of claim 1, wherein the gate spacer comprises a nitride.
6. The method of claim 1, wherein the gate spacer comprises an oxide.
7. The method of claim 1, wherein the thickness of the gate stack is 3-73 nm.
8. The method of claim 2, wherein the thickness of the high-k dielectric layer is about 1-3 nm.
9. The method of claim 8, wherein the thickness of the high-k dielectric layer is about 2 nm.
10. The method of claim 1, wherein the thickness of the metal gate conductor is about 2-70 nm.
11. The method of claim 10, wherein the thickness of the metal gate conductor is about 3.5 nm.
12. The method of claim 1, wherein the metal gate conductor is TiN, TaN, or W.
13. The method of claim 1, wherein forming said semiconductor device forms a plurality of semiconductor devices on an integrated circuit chip.
14. The method of claim 1, further comprising:
forming dummy spacers outboard of said gate spacer before forming said silicide regions; and after forming said silicide regions
removing said dummy spacers to form a space between each said gate spacer and the respective silicide region, said stress liner filling each said space.
15. The method of claim 14, wherein said dummy spacers are 2-80 nm thick.
16. The method of claim 15, wherein forming said dummy spacers comprises:
forming an oxide spacer adjacent to said gate spacer; and
forming a nitride spacer adjacent to said oxide spacer.
17. The method of claim 16, wherein said oxide spacer is 5 nm thick and said nitride spacer is 5 nm thick.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A gas wiping device comprising:
a first gas wiping nozzle and a second gas wiping nozzle arranged to face each other across a steel band pulled up from a molten-metal plating bath, the first and second gas wiping nozzles configured to remove excess molten metal adhering on a surface of the steel band;
a first tubular member disposed along a width direction of the steel band, the first tubular member connected to the first gas wiping nozzle;
a second tubular member disposed along a width direction of the steel band, the second tubular member connected to the second gas wiping nozzle;
a box-shaped body housing the first and second gas wiping nozzles, and the first and second tubular members;
a first partition member having one end thereof fixed to an outer wall of the first tubular member, and having the other end thereof fixed to an inner wall of the box-shaped body; and
a second partition member having one end thereof fixed to an outer wall of the second tubular member, and having the other end thereof fixed to an inner wall of the box-shaped body, wherein
the first gas wiping nozzle includes
a first spraying segment configured to spray gas over a range as a whole in a width direction of the steel band,
a second spraying segment configured to spray gas toward the second gas wiping nozzle over a range from one end of the first spraying segment to one inner wall of the box-shaped body in a width direction of the box-shaped body, and
a third spraying segment configured to spray gas toward the second gas wiping nozzle over a range from the other end of the first spraying segment to the other inner wall of the box-shaped body in a width direction of the box-shaped body, and wherein
the second gas wiping nozzle includes
a fourth spraying segment configured to spray gas over a range as a whole in a width direction of the steel band,
a fifth spraying segment configured to spray gas toward the first gas wiping nozzle, from over a range from one end of the fourth spraying segment to one inner wall of the box-shaped body in a width direction of the box-shaped body, and
a sixth spraying segment configured to spray gas toward the first gas wiping nozzle over a range from the other end of the fourth spraying segment to the other inner wall of the box-shaped body in a width direction of the box-shaped body.
2. The gas wiping device according to claim 1, wherein
the second and third spraying segments are configured such that gas sprayed therefrom is smaller in amount than gas sprayed from the first spraying segment, and wherein
the fifth and sixth spraying segments are configured such that gas sprayed therefrom is smaller in amount than gas sprayed from the fourth spraying segment.
3. The gas wiping device according to claim 1, wherein
at least one of the first and second gas wiping nozzles is configured to move relative to the other while being in parallel with the other so that a distance therebetween can be changed within a predetermined range, and wherein
said gas wiping device further comprises a gas regulating unit configured to regulate a spraying amount of gas in accordance with a distance between the first and second gas wiping nozzles, wherein gas sprayed from the second spraying segment and gas sprayed from the fifth spraying segment contact each other, and gas sprayed from the third spraying segment and gas sprayed from the sixth spraying segment contact each other.