1. A semiconductor integrated circuit device comprising:
a power supply line and a ground line each placed to extend in a first direction; and
first and second cells placed in a region interposed between the power supply line and the ground line to be adjacent to each other in the first direction, and each having a transistor and an intra-cell line each for implementing a circuit function, wherein
a metal wiring line extending in a second direction orthogonal to the first direction is placed in a boundary portion between the first and second cells so as not to short-circuit the power supply line and the ground line.
2. The semiconductor integrated circuit device of claim 1, wherein the metal wiring line is a dummy line in a floating state which is not connected to either of the power supply line and the ground line.
3. The semiconductor integrated circuit device of claim 1, wherein the metal wiring line includes a first line formed to protrude from the power supply line, and a second line formed to protrude from the ground line, and unconnected to the first line.
4. The semiconductor integrated circuit device of claim 1, wherein the metal wiring line is formed to protrude from the power supply line, and unconnected to the ground line.
5. The semiconductor integrated circuit device of claim 1, wherein the metal wiring line is formed to protrude from the ground line, and unconnected to the power supply line.
6. The semiconductor integrated circuit device of claim 1, wherein the metal wiring line includes a plurality of small sections.
7. The semiconductor integrated circuit device of claim 6, wherein one of the plurality of small sections is connected to the power supply line.
8. The semiconductor integrated circuit device of claim 6, wherein one of the plurality of small sections is connected to the ground line.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A light emitting device comprising:
a crystalline substrate having a plurality of side surfaces;
a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the substrate; and
a first electrode on the first conductive type semiconductor layer and a second electrode on the second conductive type semiconductor layer;
wherein an amorphous region is defined in a side surface of the substrate, and the amorphous regions of two side surfaces adjacent to each other have different depths from a top surface of the substrate.
2. The light emitting device according to claim 1, wherein the substrate has first and second side surfaces at least adjacent to each other, and a first amorphous region defined in the first side surface is horizontally spaced from a second amorphous region defined in the second side surface.
3. The light emitting device according to claim 2, wherein the first amorphous region defined in the first side surface is divided into two regions and the two regions are spaced from each other in the first side surface, and the second amorphous region defined in the second side surface is divided into two regions and the two regions are spaced from each other in the second side surface,
wherein the two first amorphous regions defined in the first side surface and the two second amorphous regions defined in the second side surface are horizontally spaced from each other.
4. The light emitting device according to claim 1, wherein the substrate has a first side surface, a second side surface, a third side surface, and a fourth side surface, and the amorphous region is defined in each of the first, second, third, and fourth side surfaces,
wherein the amorphous regions defined in at least two side surfaces adjacent to each other of the first, second, third, and fourth side surfaces are horizontally spaced from each other.
5. The light emitting device according to claim 2, wherein each of the first amorphous region defined in the first side surface and the second amorphous region defined in the second side surface has a width of 10 \u03bcm to 40 \u03bcm.
6. The light emitting device according to claim 1, wherein the substrate has first and second side surfaces at least adjacent to each other, and a first amorphous region defined in the first side surface partially overlap a second amorphous region defined in the second side surface in a horizontal direction.
7. The light emitting device according to claim 6, wherein the region in which the first and second amorphous regions overlap each other has a width less than that of a region in which the first and second amorphous regions do not overlap each other.
8. The light emitting device according to claim 6, wherein the region in which the first and second amorphous regions horizontally overlap each other has a width of 30 \u03bcm or less.
9. The light emitting device according to claim 1, wherein the amorphous region has a band shape on the side surface.
10. The light emitting device according to claim 1, wherein the substrate comprises a crystalline sapphire substrate.
11. The light emitting device according to claim 1, wherein the substrate has a pattern on a top surface thereof.
12. The light emitting device according to claim 1, wherein the amorphous region has a depth determined by a focus of a laser for cutting the light emitting device.
13. A light emitting device package comprising:
a body having a recess;
first and second conductive members disposed in the recess, the first and second conductive members being separated from each other,
a light emitting device electrically connected to the first and second conductive members, the light emitting device being disposed in the recess; and
a molding member in which the light emitting device is buried,
wherein the light emitting device comprises: a crystalline substrate having a plurality of side surfaces; a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the substrate; and a first electrode on the first conductive type semiconductor layer and a second electrode on the second conductive type semiconductor layer; wherein an amorphous region is defined in a side surface of the substrate, and the amorphous regions of two side surfaces adjacent to each other have different depths from a top surface of the substrate.
14. The light emitting device package according to claim 13, wherein the substrate has first and second side surfaces at least adjacent to each other, and a first amorphous region defined in the first side surface is horizontally spaced from a second amorphous region defined in the second side surface.
15. The light emitting device package according to claim 14, wherein each of the first and second side surfaces has at least two first and second amorphous regions.
16. The light emitting device package according to claim 15, wherein the substrate has first and second side surfaces at least adjacent to each other, and a first amorphous region defined in the first side surface partially overlap a second amorphous region defined in the second side surface in a horizontal direction.
17. The light emitting device package according to claim 16, wherein the region in which the first and second amorphous regions overlap each other has a width less than that of a region in which the first and second amorphous regions do not overlap each other.
18. A lighting device comprising:
a module board; and
a plurality of light emitting device packages disposed on the module board,
wherein the light emitting device package comprises: a body having a recess; first and second conductive members disposed in the recess, the first and second conductive members being separated from each other, a light emitting device electrically connected to the first and second conductive members, the light emitting device being disposed in the recess; and a molding member in which the light emitting device is buried, and
the light emitting device comprises: a crystalline substrate having a plurality of side surfaces; a light emitting structure layer disposed on a top surface of the substrate,
wherein an amorphous region is defined in a side surface of the substrate, and the amorphous regions of two side surfaces adjacent to each other have different depths from a top surface of the substrate.
19. The lighting device according to claim 18, wherein the substrate has first and second side surfaces at least adjacent to each other, and a first amorphous region defined in the first side surface is horizontally spaced from a second amorphous region defined in the second side surface.
20. The lighting device according to claim 18, wherein the substrate has first and second side surfaces at least adjacent to each other, and a first amorphous region defined in the first side surface partially overlap a second amorphous region defined in the second side surface in a horizontal direction.