1. A method of forming a vent in a glass substrate, the method comprising:
forming a defect in the glass substrate on a scribe line;
directing a beam spot of a laser onto the defect and advancing the beam spot along the scribe line; and
directing a cooling jet onto the defect and advancing the cooling jet along the scribe line with the beam spot to form the vent in the glass substrate, wherein a cooling spot of the cooling jet is positioned on a surface of the glass substrate such that the surface is cooled from a maximum temperature, and a change in temperature \u0394T of a surface of the glass substrate due to cooling satisfies the equation:
\u0394
\u2062
\u2062
T
\u2265
2
\u2062
\u03c3
th
CTE
\xb7
E
,
where:
\u03c3th is a threshold tensile stress for forming the vent;
CTE is a coefficient of thermal expansion of the glass substrate; and
E is the Young’s modulus of the glass substrate.
2. The method of claim 1 wherein the beam spot is elliptical with a major axis substantially aligned with the scribe line and the cooling spot is positioned within the beam spot.
3. The method of claim 2 wherein the cooling spot is spaced apart from a trailing edge of the elliptical beam spot.
4. The method of claim 2 wherein the cooling spot is positioned between a center of the elliptical beam spot and a trailing edge of the elliptical beam spot.
5. The method of claim 2 wherein:
the major axis of the elliptical beam spot has a length b such that b\u22663\xb7\u03bd\xb7\u03c4, where \u03bd is a scribing speed at which the laser beam and cooling jet are advanced over a surface of the glass substrate and \u03c4 is a heat diffusion time through the glass substrate; and
a minor axis of the elliptical beam spot has a length that is greater than or equal to a diameter of the cooling jet where the cooling jet contacts the surface of the glass substrate.
6. The method of claim 1 wherein the beam spot is scanned along the scribe line as the elliptical beam spot is advanced along the scribe line.
7. The method of claim 1 wherein the cooling jet is directed onto a surface of the glass substrate at an angle with respect to the surface of the glass substrate.
8. The method of claim 1 wherein the thickness of the glass substrate is less than about 0.6 mm.
9. The method of claim 1 wherein the glass substrate is selected from the group consisting of borosilicate glass substrates and aluminosilicate glass substrates.
10. A method for forming a vent in a glass substrate, the method comprising:
forming a defect in the glass substrate on a scribe line;
directing a laser beam with an elliptical beam spot onto the defect and advancing the elliptical beam spot along the scribe line; and
directing a cooling jet onto the defect such that a cooling spot of the cooling jet is within the elliptical beam spot and advancing the cooling jet along the scribe line with the elliptical beam spot such that the cooling spot remains within the elliptical beam spot to form the vent in the glass substrate, wherein the vent extends partially through a thickness of the glass substrate.
11. The method of claim 10 wherein a major axis of the elliptical beam spot is substantially aligned with the scribe line and the cooling spot is positioned within the elliptical beam spot between a center of the elliptical beam spot and a trailing edge of the elliptical beam spot.
12. The method of claim 10 wherein the cooling spot is positioned within the elliptical beam spot such that a change in temperature \u0394T of a surface of the glass substrate due to cooling satisfies the equation:
\u0394
\u2062
\u2062
T
\u2265
2
\u2062
\u03c3
th
CTE
\xb7
E
,
where:
\u03c3th is a threshold tensile stress for forming the vent;
CTE is a coefficient of thermal expansion of the glass substrate; and
E is the Young’s modulus of the glass substrate.
13. The method of claim 10 wherein the thickness of the glass substrate is less than about 0.6 mm.
14. The method of claim 10 wherein a major axis of the elliptical beam spot is substantially aligned with the scribe line and:
the major axis of the elliptical beam spot has a length b such that b\u22663\xb7\u03bd\xb7\u03c4, where \u03bd is a scribing speed at which the laser beam and the cooling jet are advanced along the scribe line and \u03c4 is a heat diffusion time through the glass substrate; and
a minor axis of the elliptical beam spot has a length that is greater than or equal to a diameter of the cooling spot on the glass substrate.
15. A method for separating a glass substrate into a plurality of pieces, the method comprising:
forming a first defect on a first surface of the glass substrate;
opening a first vent along a scribe line extending from the first defect, wherein the first vent extends partially through a thickness of the glass substrate;
forming a second defect on a second surface of the glass substrate;
opening a second vent along the scribe line extending from the second defect, wherein the second vent extends partially through the thickness of the glass substrate; and
mechanically separating the glass substrate along the first vent and the second vent, wherein the first vent and the second vent are opened by:
directing a laser beam with an elliptical beam spot onto a defect and advancing the elliptical beam spot along the scribe line; and
directing a cooling jet along the scribe line and advancing the cooling jet along a surface of the glass substrate on the scribe line with the elliptical beam spot to form a vent in the glass substrate, wherein a cooling spot of the cooling jet is positioned within the elliptical beam spot such that the cooling spot remains within the elliptical beam spot and a surface of the glass substrate is cooled from a maximum temperature.
16. The method of claim 15 wherein the cooling spot is statically positioned within the elliptical beam spot between a center of the elliptical beam spot and a trailing edge of the elliptical beam spot as the elliptical beam spot and the cooling jet are advanced along the surface of the glass substrate on the scribe line.
17. The method of claim 15 wherein the elliptical beam spot is scanned along the scribe line on the surface of the glass substrate as the elliptical beam spot is advanced along the scribe line.
18. The method of claim 15 wherein the first vent and the second vent are perpendicular to one another.
19. The method of claim 15 wherein the first defect is spaced apart from a first edge of the glass substrate and the second defect is spaced apart from a second edge of the glass substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A display device comprising:
a substrate;
a pixel defining layer defining a pixel region on the substrate;
a first electrode on the pixel region;
a light emitting layer on the first electrode;
a second electrode on the light emitting layer;
a thin film encapsulation layer on the second electrode;
a metal pattern on the thin film encapsulation layer and overlapping the pixel defining layer; and
a multi-layer thin film layer on the metal pattern and the thin film encapsulation layer.
2. The display device of claim 1, wherein the metal pattern comprises molybdenum (Mo).
3. The display device of claim 2, wherein the multi-layer thin film layer comprises at least one dielectric layer and at least one metal layer, and
the dielectric layer and the metal layer are alternately laminated.
4. The display device of claim 3, wherein the dielectric layer is on the metal pattern.
5. The display device of claim 3, wherein the dielectric layer comprises at least one of silicon oxides (SiOx, x\u22671), silicon nitrides (SiNx, x\u22671), magnesium fluorides (MgF2), calcium fluorides (CaF2), aluminum oxides (Al2O3), tin oxides (SnO2), indium tin oxides (ITO), indium zinc oxides (IZO), zinc oxides (ZnO), tantalum oxides (Ta2O5), niobium oxides (Nb2O5), hafnium oxides (HfO2), titanium oxides (TiO2), and indium oxides (In2O3).
6. The display device of claim 3, wherein the metal layer comprises at least one of chromium (Cr), titanium (Ti), molybdenum (Mo), cobalt (Co), nickel (Ni), tungsten (W), aluminum (Al), silver (Ag), gold (Au), copper (Cu), iron (Fe), magnesium (Mg), and platinum (Pt).
7. The display device of claim 1, wherein the thin film encapsulation layer comprises at least one organic layer and at least one inorganic layer, and
the organic layer and the inorganic layer are alternately laminated.
8. The display device of claim 1, further comprising a capping layer between the thin film encapsulation layer and the second electrode.
9. A method of manufacturing a display device, the method comprising:
forming a thin film encapsulation layer on a substrate, the substrate comprising a first electrode, a pixel defining layer defining a pixel region, a light emitting layer, and a second electrode;
coating a molybdenum thin film on the thin film encapsulation layer;
coating a molybdenum oxide (MoOx) thin film on the molybdenum thin film;
radiating laser light on the molybdenum oxide thin film overlapping the pixel region and oxidizing the molybdenum thin film overlapping the pixel region; and
forming a metal pattern by wet etching the oxidized molybdenum thin film and the molybdenum oxide thin film.
10. The method of claim 9, wherein the forming of the metal pattern comprises wet etching the oxidized molybdenum thin film and the molybdenum oxide thin film utilizing water (H2O).
11. The method of claim 9, wherein the oxidized molybdenum thin film is MoOx and X is in a range of X>2.
12. The method of claim 9, further comprising forming a multi-layer thin film layer on the thin film encapsulation layer.
13. The method of claim 12, wherein the forming of the multi-layer thin film layer comprises alternately laminating at least one dielectric layer and at least one metal layer.
14. The method of claim 9, wherein the forming of the thin film encapsulation layer comprises alternately laminating at least one organic layer and at least one inorganic layer.
15. A method of manufacturing a display device, the method comprising:
forming a thin film encapsulation layer on a substrate, the substrate comprising a first electrode, a pixel defining layer defining a pixel region, a light emitting layer, and a second electrode;
coating a molybdenum thin film on the thin film encapsulation layer;
injecting oxygen (O2) into the molybdenum thin film overlapping the pixel region by ion implantation and oxidizing the molybdenum thin film overlapping the pixel region; and
forming a metal pattern by wet etching the oxidized molybdenum thin film.
16. The method of claim 15, wherein the forming of the metal pattern comprises wet etching the oxidized molybdenum thin film utilizing water (H2O).
17. The method of claim 15, wherein the oxidized molybdenum thin film is MoOx and X is in a range of X>2.
18. The method of claim 15, further comprising forming a multi-layer thin film layer on the thin film encapsulation layer.
19. The method of claim 18, wherein the forming of the multi-layer thin film layer comprises alternately laminating at least one dielectric layer and at least one metal layer.
20. The method of claim 15, wherein the forming of the thin film encapsulation layer comprises alternately laminating at least one organic layer and at least one inorganic layer.