1. A terminal fitting (T), comprising a tube (10) for receiving a mating contact portion (54), a resilient contact (25) accommodated in the tube (10) and disposed for contacting the mating contact portion (54) while being resiliently deformed, and a locking hole (19) formed in a plate of the tube (10) and disposed to at least partly expose the resilient contact (25) externally of the tube (10), the locking hole (19) being engageable with a resiliently deformable lock (52) of a connector housing (50), at least one intrusion restricting portion (21) formed in a plate (12) of the tube near the resilient contact (25) and being located at least partly in an opening area of the locking hole (19).
2. The terminal fitting of claim 1, wherein the intrusion restricting portion (21) is outside a deformation space for the resilient contact (25).
3. The terminal fitting of claim 1, wherein the resilient contact (25) has a widthwise center offset from a widthwise center of the tube (10).
4. The terminal fitting of claim 3, wherein, the tube (10) has opposed first and second side plates (13R, 13L), the resilient contact (25) being farther from the first side plate (13R) than from the second side plate (13L), the intrusion restricting portion (21) being formed only at the first side plate (13R).
5. The terminal fitting of claim 1, wherein the locking hole (19) is formed over substantially an entire width of the tube (10).
6. The terminal fitting of claim 1, wherein the tube (10) has opposed side plates (13R, 13L), end surfaces of the side plates (13R, 13L) being exposed in the opening area of the locking hole (19).
7. The terminal fitting of claim 1, wherein the tube (10) has opposed first and second side plates (13R, 13L), the intrusion restricting portion (21) being formed by embossing an end edge of the first side plate (13R) substantially facing the locking hole (19) to project substantially inward.
8. The terminal fitting of claim 1, wherein the tube (10) has a locking plate (15F; 15R), a displacement of the resilient contact (25) towards a portion (14) of the tube (10) is restricted by bringing a portion of the resilient contact (25) into contact with the locking plate (15F; 15R).
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A heterojunction bipolar transistor comprising:
a sub-collector region made of semiconductor of a first conductivity type;
a collector region made of semiconductor of the first conductivity type in such a way as to contact the sub-collector region;
a base region made of semiconductor of a second conductivity type in such a way as to contact the collector region;
an emitter region made of semiconductor of the first conductivity type in such a way as to contact the base region;
the collector region including:
a first collector layer made of semiconductor of the first conductivity type or undoped semiconductor in such a way as to contact the sub-collector region;
a second collector layer made of semiconductor of the first conductivity type or undoped semiconductor having a narrower band gap than the first collector layer in such a way as to contact the base region; and
a third collector layer made of semiconductor of the first conductivity type having a higher doping concentration than the second collector layer in such a way as to be located between the first collector layer and the second collector layer.
2. The transistor according to claim 1, wherein the first collector layer is made of InGaP, which contains a natural superlattice having regularly arranged In atoms and Ga atoms in a group-III atomic layer.
3. The transistor according to claim 1, wherein the third collector layer includes a same semiconductor as the first collector layer or the second collector layer.
4. The transistor according to claim 1, wherein the third collector layer is made of semiconductor including GaAs.
5. The transistor according to claim 1, wherein the third collector layer is made of a mixed semiconductor crystal selected from the group consisting of InGaAs, AlGaAs, InAlAs, and InAlGaAs.
6. The transistor according to claim 1, wherein the second collector layer is made of semiconductor including GaAs.
7. The transistor according to claim 1, wherein the second collector layer is made of a mixed semiconductor crystal selected from the group consisting of InGaAs, AlGaAs, InAlAs, and InAlGaAs.
8. The transistor according to claim 1, wherein the third collector layer has a thickness of 10 nm or less.
9. The transistor according to claim 1, wherein the third collector layer is made of at least one of InGaP and GaAs.
10. The transistor according to claim 1, wherein the first collector layer has a thickness of one-tenth of a total thickness of the collector region or greater.
11. The transistor according to claim 1, wherein the third collector layer has a doping concentration of 51017 cm3 or greater.
12. The transistor according to claim 1, further comprising an additional sub-collector layer having a wider band gap than the second collector layer;
wherein the additional sub-collector layer is provided in the sub-collector region in such a way as to be adjacent to the first collector layer.
13. A semiconductor integrated circuit device comprising a plurality of the heterojunction bipolar transistors according to claim 1.