1. A light emitting apparatus comprising:
a pixel circuit formed over a long substrate;
a partition formed over the substrate provided with the pixel circuit, the partition including a plurality of openings; and
a plurality of pixels defined by the plurality of the openings, wherein
the pixel comprises a light emitting element comprising a lower electrode connected to the pixel circuit and an organic compound layer formed over the lower electrode,
the plurality of the pixels is arranged in a line in a longitudinal direction of the substrate,
the pixel circuit comprises: a transistor comprising a gate electrode and sourcedrain electrodes; a first interconnection comprising the gate electrode; and a second interconnection comprising the sourcedrain electrodes, and
the second interconnection and an interconnection formed of a same layer as the second interconnection are separated from the organic compound layer in planar view from a direction perpendicular to a main surface of the substrate.
2. The light emitting apparatus according to claim 1, further comprising
at least one of a third interconnection formed of a same layer as the first interconnection and a fourth interconnection formed of a same layer as the lower electrode, the third interconnection and the fourth interconnection formed between the substrate and the organic compound layer.
3. The light emitting apparatus according to claim 1, wherein
the partition is made of an inorganic material.
4. The light emitting apparatus according to claim 1, wherein
the plurality of the pixels is arranged in a single line.
5. The light emitting apparatus according to claim 1, wherein
the plurality of the pixels is arranged in two lines, a first line and a second line,
the first line and the second line include separation regions between the pixels, and
the pixels included in the second line are arranged at positions equivalent to the separation regions in the first line.
6. The light emitting apparatus according to claim 5, wherein
an interconnection resistance from the lower electrode of the pixel arranged in the first line to the pixel circuit and an interconnection resistance from the lower electrode of the pixel arranged in the second line to the pixel circuit are the same each other.
7. The light emitting apparatus according to claim 6, wherein
a distance from the pixel arranged in the first line to the pixel circuit is longer than a distance from the pixel arranged in the second line to the pixel circuit, and
a width of an interconnection portion connecting the lower electrode of the pixel arranged in the first line and the pixel circuit is greater than a width of an interconnection portion connecting the lower electrode of the pixel arranged in the second line and the pixel circuit.
8. The light emitting apparatus according to claim 6, further comprising
a fifth interconnection for connecting the lower electrode of the pixel arranged in the first line and the pixel circuit, the fifth interconnection formed of a same layer as the first interconnection.
9. A light emitting apparatus comprising:
a pixel circuit formed over a long substrate;
a partition formed over the substrate provided with the pixel circuit, the partition made of an inorganic material including a plurality of openings; and
a plurality of pixels defined by the partition,
the pixel comprising a light emitting element comprising: a lower electrode connected to the pixel circuit; an upper electrode; and an organic compound layer arranged between the lower electrode and the upper electrode,
a part of the upper electrode arranged on the partition, a data line for supplying a signal arranged adjacent to the upper electrode, wherein
a distance between an end of the upper electrode and the data line in an in-plane direction is 2 \u03bcm or more.
10. The light emitting apparatus according to claim 1, wherein
the organic compound layer is formed in a band shape in the longitudinal direction of the substrate and is common to the light emitting elements in the plurality of the pixels.
11. The light emitting apparatus according to claim 9, wherein
the organic compound layer is formed in a band shape in the longitudinal direction of the substrate and is common to the light emitting elements in the plurality of the pixels.
12. An image forming apparatus comprising:
a photoreceptor;
a charging unit configured to charge the photoreceptor;
an exposure unit configured to expose the photoreceptor, the exposure unit comprising the light emitting apparatus according to claim 1; and
a developing unit configured to supply a developer to the photoreceptor, wherein
the plurality of the pixels included in the light emitting apparatus is arranged in a major axis direction of the photoreceptor.
13. An image forming apparatus comprising:
a photoreceptor;
a charging unit configured to charge the photoreceptor;
an exposure unit configured to expose the photoreceptor, the exposure unit comprising the light emitting apparatus according to claim 1; and
a developing unit configured to supply a developer to the photoreceptor, wherein
the plurality of the pixels included in the light emitting apparatus is arranged in a major axis direction of the photoreceptor.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A trench-gate MOSFET device, comprising:
a substrate of a first conductive type;
an epitaxial layer of the first conductive type formed on the substrate, wherein the epitaxial layer has a top surface;
a gate dielectric layer formed in the epitaxial layer;
a gate formed in the gate dielectric layer;
a body region formed in the epitaxial layer adjacent to the gate dielectric layer, wherein the body region has a second conductive type opposite to the first conductive type;
a source of the first conductive type formed on the body region;
a source metal contact extending through the source into the body region; and
at least one highly doped region of the second conductive type located in the body region under the source metal contact, wherein the at least one highly doped region has a higher doping concentration than the body region;
wherein a curving dopant profile with a peak point under the at least one highly doped region is formed between the body region and the epitaxial layer so that the vertical distance between the peak point of the curving dopant profile and the top surface of the epitaxial layer is smaller than the vertical distance between the other portion of the curving dopant profile and the top surface of the epitaxial layer, and so that when a reverse breakdown occurs in the body diode of the trench-gate MOSFET device under undamped inductive switching condition, the electric field of the trench-gate MOSFET device converges around the peak point and a majority of the reverse current flows through the at least one highly doped region.
2. The trench-gate MOSFET device of claim 1, wherein one of the at least one highly doped region is in contact with the source metal contact.
3. The trench-gate MOSFET device of claim 1, wherein the trench-gate MOSFET device comprises more than one highly doped region positioned along a vertical orientation to the top surface of the epitaxial layer.
4. The trench-gate MOSFET device of claim 3, wherein the highly doped region positioned at the top of the vertical orientation is in contact with the source metal contact.
5. The trench-gate MOSFET device of claim 1, wherein a plurality of trench-gate MOSFET devices are fabricated together and every two adjacent MOSFET devices share a common source metal contact.
6. The trench-gate MOSFET device of claim 5, wherein the source metal contact is at the midpoint between the gates of two adjacent MOSFET devices.