1. A method for securing at least two semiconductor device components to one another, comprising:
applying an adhesive material comprising a pressure sensitive component and a thermoset component to at least a portion of a surface of a first semiconductor device component;
bringing a surface of a second semiconductor device component into contact with the adhesive material to temporarily secure the second semiconductor device component to the first semiconductor device component; and
heating the adhesive material to cure at least the thermoset component thereof.
2. The method of claim 1, wherein bringing comprises pressing the surface of the second semiconductor device component against the adhesive material.
3. The method of claim 1, wherein, in bringing, the pressure sensitive component of the adhesive material temporarily secures the second semiconductor device component to the first semiconductor device component.
4. The method of claim 1, wherein said applying comprises applying the adhesive material to a carrier.
5. The method of claim 4, wherein applying comprises applying the adhesive material to at least a portion of a surface of at least one of a lead frame, a circuit board, an interposer, and at least one semiconductor die.
6. The method of claim 1, wherein bringing comprises bringing at least one semiconductor die into contact with the adhesive material.
7. The method of claim 1, wherein bringing comprises bringing a heat sink into contact with the adhesive material.
8. The method of claim 1, wherein applying comprises at least one of spraying the adhesive material, spreading the adhesive material, metered-dispensing of the adhesive material, extruding the adhesive material, contact applying the adhesive material, and positioning a structure coated with the adhesive material.
9. The method of claim 8, wherein spraying comprises atomizing the adhesive material.
10. The method of claim 1, wherein applying comprises spreading the adhesive material over only a portion of the surface.
11. The method of claim 1, wherein applying comprises applying a film including the adhesive material on at least portions of opposite surfaces thereof to at least the surface.
12. The method of claim 1, wherein heating comprises heating at least the adhesive material to a temperature of less than about 200\xb0 C.
13. The method of claim 1, wherein heating comprises heating at least the adhesive material to a temperature of about 120\xb0 C.
14. The method of claim 1, further comprising:
repositioning the first and second semiconductor device components relative to one another before heating.
15. A method for securing at least two semiconductor device components to one another, comprising:
applying an adhesive material comprising a pressure sensitive component and a thermoset component to at least one of the at least two semiconductor device components;
bringing the at least two semiconductor device components into contact with one another with adhesive material positioned therebetween to at least temporarily secure the at least two semiconductor device components to one another; and
heating at least the adhesive material to permanently secure the at least two semiconductor device components to one another.
16. The method of claim 15, wherein, during bringing, the pressure sensitive component of the adhesive material temporarily secures the at least two semiconductor device components to one another.
17. The method of claim 15, wherein, during heating, the thermoset component of the adhesive material permanently secures the at least two semiconductor device components to one another.
18. The method of claim 15, wherein bringing comprises pressing at least one of the at least two semiconductor device components toward the other of the at least two semiconductor device components.
19. The method of claim 15, wherein applying comprises applying the adhesive material to a semiconductor device component that comprises a carrier.
20. The method of claim 19, wherein applying the adhesive material to a semiconductor device component that comprises a carrier includes applying the adhesive material to one of a lead frame, a circuit board, an interposer, and at least one semiconductor die.
21. The method of claim 15, wherein bringing comprises bringing a carrier into contact with another semiconductor device component.
22. The method of claim 15, wherein bringing comprises bringing a heat sink into contact with another semiconductor device component.
23. The method of claim 15, wherein applying comprises at least one of spraying the adhesive material, spreading the adhesive material, metered-dispensing of the adhesive material, extruding the adhesive material, contact applying the adhesive material, and positioning a structure coated with the adhesive material.
24. The method of claim 23, wherein spraying comprises atomizing the adhesive material.
25. The method of claim 15, wherein applying comprises applying a film including the adhesive material on at least portions of opposite surfaces thereof to at least a portion of a surface of at least one of the at least two semiconductor device components.
26. The method of claim 15, wherein heating comprises heating at least the thermoset component of the adhesive material to a temperature of less than about 200\xb0 C.
27. The method of claim 15, wherein heating comprises heating at least the thermoset component of the adhesive material to a temperature of about 120\xb0 C.
28. The method of claim 15, further comprising:
repositioning the at least two semiconductor device components relative to one another before heating.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A lithographic printing plate comprising: a substrate; and an infrared-imageable, self-organized layer featuring a continuous varying distribution in a direction vertical to the substrate of a hydrophilicoleophilic, ink-receptive polymer material and a hydrophobicoleophobic ink-repelling polymer material, the distribution being induced by the incompatibility of said materials.
2. A lithographic printing plate according to claim 1, wherein the substrate is aluminum or polyester.
3. A lithographic printing plate according to claim 2, wherein the substrate is aluminum that is grained and anodised, or the substrate is aluminum that has been treated with phosphoric acid.
4. The lithographic printing plate of claim 2, wherein the substrate is aluminum that is pre-coated with a thermally insulating organic coating.
5. The lithographic printing plate of claim 1, wherein the self-organized layer contains a polydimethylsiloxane, a hydrophilic polymer, and an infrared absorbing dye, pigment, or a mixture of dyes and pigments.
6. The lithographic printing plate of claim 1, wherein said hydrophobicoleophobic ink-repelling polymer material comprises a silicone polymer and said hydrophilicoleophilic, ink-receptive polymer material comprises a non-silicone polymer.
7. The lithographic printing plate of claim 6, wherein the non-silicone polymer is nitrocellulose or a mixture of nitrocelluloses.
8. The lithographic printing plate of claim 6, which on selective imaging by infra-red ablation gives oleophilic image areas formed by the surface of the substrate, and oleophobic non-image areas formed from unablated silicone.
9. The lithographic printing plate of claim 6, which on selective imaging by infra-red ablation gives oleophilic image areas formed by the non-silicone polymer-enriched surface directly attached to the substrate exposed by the image ablation process and oleophobic non-imaged areas formed from unablated silicone.
10. The lithographic printing plate of claim 6, which on selective ablation by infra-red radiation gives hydrophilic ablated (background) areas formed by the surface of the substrate, and oleophilic non-ablated (image) areas formed from unablated silicone.
11. The lithographic printing plate of claim 6, which on selective ablation by infra-red radiation gives hydrophilic ablated (background) areas formed by the non-silicone polymer-enriched surface directly attached to the substrate exposed by the ablation process and oleophilic non-ablated (image) areas formed from unablated silicone.
12. A method of forming a lithographic printing plate, comprising providing a substrate, and forming on said substrate, an infrared-imageable, self-organizing layer that features a continuous varying distribution in a direction vertical to the substrate of a hydrophilicoleophilic, ink-receptive polymer material and a hydrophobicoleophobic ink-repelling polymer material that are dissolved in a mixture of at least two volatile organic solvents, the distribution being induced by the incompatibility of said materials during the evaporation of said mixture of at least two volatile organic solvents.
13. The method of claim 12, wherein the substrate is aluminum or the substrate is polyester.
14. The method of claim 13, wherein the substrate is aluminum that is grained and anodised or the substrate is aluminum that has been treated with phosphoric acid.
15. The method of claim 12, wherein the substrate is aluminum and the method additionally comprises the step of pre-coating the aluminum with a thermally insulating organic coating.
16. The method of claim 12, wherein the self-organized layer contains a polydimethylsiloxane, a hydrophilic polymer, and an infrared absorbing dye, pigment, or a mixture of dyes and pigments.
17. The method of claim 12, wherein said hydrophobicoleophobic ink-repelling polymer material comprises a silicone polymer and said hydrophilicoleophilic, ink-receptive polymer material comprises a non-silicone polymer.
18. The method of claim 17, wherein the non-silicone polymer is nitrocellulose or a mixture of nitrocelluloses.
19. The method of claim 12, wherein said self-organizing layer contains a poly dimethyl siloxane, said poly dimethyl siloxane soluble in at least one of said mixture solvents.
20. The method of claim 19, wherein said hydrophilicoleophilic, ink-receptive polymer material comprises a non-silicone polymer that is soluble in at least one of said mixture solvents.
21. The method of claim 19, wherein the ingredients of said self-organizing layer are diluted in a solvent mixture selected to permit all of the ingredients to remain in solution for at least 8 hours prior to application to said substrate.
22. The method of claim 12, wherein the self-organizing layer contains a poly dimethyl siloxane and an infra-red absorbing dye or mixture of dyes that are chosen so that they do not inhibit the curing of the poly dimethyl siloxane.
23. The method of claim 12, additionally comprising the step of heating said applied self-organizing layer, wherein the layer organizes itself into an infinite number of horizontal layers constituting a self-organized system.
24. The method of claim 17, additionally comprising the step of heating said applied self-organizing layer, wherein the layer organizes itself into an infinite number of horizontal layers constituting a self-organized system having a mixture rich in poly methyl siloxane on its surface and a mixture rich in non-silicone polymer in proximity to the substrate surface.