1. A fixing apparatus for fixing a toner image formed on a recording material, comprising:
a fixing rotatable member;
a cleaning unit configured to clean said fixing rotatable member, said cleaning unit including a first shaft, a second shaft, and cleaning fabric extended between said first shaft and said second shaft and fed out from one of said first shaft and said second shaft and wound up on the other of said first shaft and said second shaft,
wherein the outer diameter of said cleaning fabric wound on said first shaft and the outer diameter of said cleaning fabric wound on said second shaft change in accordance with the amount of winding of said cleaning fabric,
wherein at the time of cleaning said fixing rotatable member, an outer surface of said cleaning fabric wound on said first shaft contacts said fixing rotatable member, and
wherein the outer diameter of said cleaning fabric wound on said first shaft is larger than that wound on said second shaft irrespective of the amount of said cleaning fabric on said first shaft.
2. An apparatus according to claim 1, wherein said first shaft is movable so that the outer surface of said cleaning fabric is away from said fixing rotatable member, and the distance between a center point of said first shaft and a center point of said second shaft is shorter when the outer surface of said cleaning fabric is away from said fixing rotatable member than when the outer surface of said cleaning fabric contacts said fixing rotatable member.
3. An apparatus according to claim 1, wherein said second shaft winds up a used part of said cleaning fabric.
4. An apparatus according to claim 3, wherein an outer surface of said cleaning fabric wound on said second shaft is a surface having contacted said fixing rotatable member.
5. An apparatus according to claim 1, wherein the diameter of said first shaft is larger than that of said second shaft.
6. An apparatus according to claim 1, further comprising an endless film cooperating with said fixing rotatable member to form the fixing nip.
7. A fixing apparatus for fixing a toner image formed on a recording material, comprising:
a fixing rotatable member;
a cleaning unit configured to clean said fixing rotatable member, said cleaning unit including a first shaft, a second shaft, and cleaning fabric extended between said first shaft and said second shaft and fed out from one of said first shaft and said second shaft and wound up on the other of said first shaft and said second shaft,
wherein the outer diameter of said cleaning fabric wound on said first shaft and the outer diameter of said cleaning fabric wound on said second shaft change in accordance with the amount of winding of said cleaning fabric,
wherein said first shaft is movable between a first position for contacting an outer surface of said cleaning fabric to said fixing rotatable member and a second position for spacing the outer surface of said cleaning fabric from said fixing rotatable member,
wherein the distance between a center point of said first shaft and a center point of said second shaft is shorter when the first shaft is positioned at the second position than when the first shaft is positioned at the first position, and
wherein the outer diameter of said cleaning fabric wound on said first shaft is larger than that wound on said second shaft irrespective of the amount of said cleaning fabric on said first shaft.
8. An apparatus according to claim 7, wherein said second shaft winds up a used part of said cleaning fabric.
9. An apparatus according to claim 8, wherein an outer surface of said cleaning fabric wound on said second shaft is a surface having contacted said fixing rotatable member.
10. An apparatus according to claim 7, wherein the diameter of said first shaft is larger than that of said second shaft.
11. An apparatus according to claim 7, further comprising an endless film cooperating with said fixing rotatable member to form the fixing nip.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating a memory device, the method comprising:
forming a stack of horizontal layers comprising alternating sacrificial layers of a first type and sacrificial layers of a second type;
forming a vertical opening through the horizontal stack of layers, wherein the vertical opening comprises a sidewall surface;
forming a first vertical dielectric layer on the sidewall surface;
forming a vertical floating gate layer on the first vertical dielectric layer;
forming a second vertical dielectric layer on the vertical floating gate layer;
filling the vertical opening with a channel material;
forming cavities of a first type by removing sacrificial layers of the second type to expose the first vertical dielectric layer;
removing portions of the first vertical dielectric layer and portions of the vertical floating gate layer at locations adjacent to the cavities of the first type, thereby laterally extending the cavities of the first type to expose portions of the second vertical dielectric layer;
filling the extended cavities of the first type with an isolating material;
forming cavities of a second type by removing the sacrificial layers of the first type to expose portions of the first vertical dielectric layer;
forming a third dielectric layer in the cavities of the second type and on the first vertical dielectric layer; and
forming a conductive material in the cavities of the second type and in contact with the third dielectric layer.
2. The method according to claim 1, wherein removing the portions of the first vertical dielectric layer and the portions of the vertical floating gate layer comprises isotropically etching.
3. The method according to claim 1, wherein the first vertical dielectric layer and the third dielectric layer are formed with a total thickness (ttot), and wherein a thickness of the first vertical layer (t1) is in the range of 20%-60% of the total thickness (ttot).
4. The method according to claim 1, further comprising, after forming the cavities of the second type, and prior to forming the third dielectric layer, removing the exposed first vertical dielectric layer, wherein the third dielectric layer has a total thickness (ttot).
5. The method according to claim 3, wherein the total thickness (ttot) is between 10 nm and 20 nm.
6. The method according to claim 1, wherein the vertical floating gate layer has a thickness between 1 nm and 5 nm.
7. The method according to claim 1, wherein the second vertical dielectric layer has a thickness between 6 nm and 10 nm.
8. The method according to claim 1, wherein the conductive material comprises a metal.
9. The method according to claim 1, wherein the forming the third dielectric layer comprises forming a plurality of dielectric layers.
10. The method according to claim 1, wherein forming the vertical floating gate layer comprises forming a semiconductor layer and a metal-comprising layer.
11. The method according to claim 1, wherein the channel material comprises an amorphous semiconductor material.
12. The method according to claim 11, further comprising transforming the amorphous semiconductor material to a poly-crystalline semiconductor material or a single-crystalline semiconductor material.