1. A method of treating a turbine blade, comprising:
providing the turbine blade having an endplate with a peripheral surface;
placing a covering strip on the peripheral surface using a plug connection to at least partially cover the peripheral surface;
providing the plug connection by a groove formed into the peripheral surfaces;
plugging a plug-in limb of the covering strip into the groove;
coating the turbine blade with a material comprising metal or metal alloy or ceramic;
removing coating material from regions of the peripheral surface which are not covered by the covering strip; and
removing the covering strip from the turbine blade.
2. The method as claimed in claim 1, wherein the covering strip covers a region of the peripheral surface which extends on a side of the plug connection remote from the airfoil.
3. The method as claimed in claim 1, wherein the peripheral surface and the covering strip are plugged together as a tongue-and-groove connection.
4. The method as claimed in claim 1, wherein the covering strip has an angle profiled section with a protective limb adjoining the plug-in limb.
5. The method as claimed in claim 4, wherein the plug-in limb and the protective limb are perpendicular to one another.
6. The method as claimed in claim 1, wherein the covering strip has a length that is greater than the depth of the airfoil.
7. The method as claimed in claim 1, wherein the peripheral surface has a step in a region of the plug connection.
8. The method as claimed in claim 7, wherein the step projects outward on the side of the plug connection remote from the airfoil.
9. The method as claimed in claim 7, wherein the step projects outward on the side of the plug connection facing the airfoil.
10. A turbine blade, comprising:
an airfoil having an endplate with a hot-gas side facing the airfoil and adjoining peripheral surfaces; and
a plug-connection recess arranged on at least one of the peripheral surfaces,
wherein the at least one peripheral surface has a step in a region of the plug-connection recess, and
wherein the step projects outward on a side of the plug-connection recess, the side being remote from the airfoil or facing the airfoil.
11. A turbine blade as claimed in claim 10, wherein a plug-connection projection is arranged on a further surface of the peripheral surfaces.
12. The turbine blade as claimed in claim 10, wherein the plug-connection recess is formed as a groove.
13. The turbine blade as claimed in claim 10, wherein a covering strip covers the region of a peripheral surface which extends on a side of a plug connection between the covering strip and the turbine blade remote from the blade.
14. The turbine blade as claimed in claim 13, the covering strip is formed as an angle profiled section having a protective limb which adjoins a plug-in limb at an right angle.
15. The turbine blade as claimed in claims 13, wherein a length of the covering strip is greater than the depth of the airfoil.
16. The turbine blade as claimed in claim 13, wherein the covering strip consists of metal.
17. The turbine blade as claimed in claim 13, wherein the airfoil is delimited at both ends by endplates, and a covering strip is fitted onto a peripheral surface of two endplates.
18. A turbine blade, comprising:
an airfoil having an endplate with a hot-gas side facing the airfoil and adjoining peripheral surfaces; and
a plug-connection projection arranged on at least one of the peripheral surface,
wherein the at least one peripheral surface has a step in a region of the plug-connection projection, and
wherein the step projects outward on a side of the plug-connection projection, the side being remote from the airfoil or facing the airfoil.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method, comprising cleaning a semiconductor substrate with a cleaning solution to form a cleaned substrate; immersing, for a period of time between several seconds and approximately five (5) minutes, the cleaned substrate in a solution containing hydrogen and fluorine ions of between approximately 1%-50% by weight; removing the substrate from the solution and blow-drying the substrate with nitrogen, thereby forming an interface layer containing hydrogen and fluorine on the semiconductor substrate, said interface layer being of sufficient thickness to passivate a surface of said semiconductor substrate in a vicinity of said interface layer; subsequently depositing a metal layer over the interface layer using a thermally evaporated source, thereby forming a junction having a metal layer disposed over the interface layer disposed over the semiconductor, said junction having a specific contact resistance of less than or equal to approximately 1000\u03a9-\u03bcm2.
2. The method of claim 1, wherein following removal of the substrate from the solution and prior to blow-drying the substrate with nitrogen, rinsing the substrate in deionized water for less than 30 sec.
3. A method, comprising heating a substrate containing a semiconductor surface in the presence of a nitrogenous material thereby to form a nitride interface layer of sufficient thickness to passivate said semiconductor surface; cooling the semiconductor surface; subsequently depositing a metal layer over the interface layer using a thermally evaporated source, thereby forming a junction having a metal layer disposed over the interface layer disposed over the semiconductor, said junction having a specific contact resistance of less than or equal to approximately 1000\u03a9-\u03bcm2.
4. The method of claim 3, wherein the nitrogenous material comprises a gas.
5. The method of claim 4, wherein the gas comprises ammonia.
6. The method of claim 3, wherein the substrate contains an exposed silicon surface and is annealed at a temperature between approximately 300\xb0 C. and approximately 750\xb0 C.
7. The method of claim 3, the heating is performed in a heating chamber and prior to the heating, pulling a vacuum of less than approximately one millionth of a Torr in the heating chamber, and then heating the substrate in the heating chamber.
8. The method of claim 3, wherein the substrate is heated to a temperature between approximately 900\xb0 C. and approximately 1000\xb0 C. in an inert ambient.
9. The method of claim 3, wherein the semiconductor surface is exposed to a pulse of ammonia for a time period between approximately 0.5 seconds and approximately 5 seconds.