1. A nanocomposite made by mixing:
from about 0.01% to about 80% by weight of at least one guest metal nanoparticle; and
from about 20% to about 99.99% by weight of a metal oxide sol made by mixing:
at least one metal oxide, wherein the metal is a transition metal, a post-transition metal, an alkali metal, or alkaline earth metal;
at least one organosilane;
at least one boron oxide compound selected from the group consisting of boric acid, alkoxy boron compounds, hydrocarbyl boric acids, hydrocarbyl hydroxy boron alkoxides, and hydroxy boron alkoxides; and
a liquid.
2. The nanocomposite of claim 1, wherein the guest metal nanoparticle comprises at least one noble metal atom selected from the group consisting of gold, silver, platinum, palladium, iridium, rhenium, mercury, ruthenium, rhodium, copper, and osmium andor at least one non-noble metal atom selected from the group consisting of iron, cobalt, vanadium, chromium, manganese, molybdenum, nickel, lead, cadmium, niobium, technetium, and tungsten.
3. The nanocomposite of claim 1, wherein the guest metal nanoparticle comprises at least one selected from the group consisting of gold hydroxide, gold acetate, gold chloride, platinum chloride, silver acetylacetonate, silver citrate, silver lactate, silver nitrate, platinum acetylacetonate, palladium acetylacetonate, palladium acetate, palladium hydroxide, ruthenium acetylacetonate, copper ethoxide, Fe(CO)5, Fe2(CO)9, CO2(CO)8, V(CO)6, Cr(CO)6, Mn2(CO)10, Re2(CO)10, Ru3(CO)12, Mo(CO)6, Os(CO)5, Os3(CO)12,Ir4(CO)12, W(CO)6, Tc2(CO)10, Ru(CO)5, Rh(CO)12, Pd(CO)4, Pt(CO)4, and platinum-1,3-divinyl-1,1,3,3,-tetramethyldisiloxane.
4. The nanocomposite of claim 1, wherein the guest metal nanoparticle comprises at least one noble metal atom selected from the group consisting of gold, silver, platinum, and palladium.
5. The nanocomposite of claim 1, wherein
the metal oxide is selected from the group consisting of aluminum triethoxide, aluminum isopropoxide, aluminum sec-butoxide, aluminum tri-t-butoxide, magnesium trifluoroacetylacetonate, magnesium methoxide, magnesium ethoxide, titanium methoxide, titanium ethoxide, titanium isopropoxide, titanium propoxide, titanium butoxide, titanium ethylhexoxide, titanium (triethanolaminato)isopropoxide, titanium bis(ethyl acetoacetato)diisopropoxide, titanium bis(2,4-pentanedionate)diisopropoxide, zirconium ethoxide, zirconium isopropoxide, zirconium propoxide, zirconium sec-butoxide, zirconium t-butoxide, aluminum di-s-butoxide ethylacetonate, calcium methoxyethoxide, calcium methoxide, magnesium methoxyethoxide, copper ethoxide, copper methoxyethoxyethoxide, antimony butoxide, bismuth pentoxide, chromium isopropoxide, tin ethoxide, zinc methoxyethoxide, titanium n-nonyloxide, vanadium tri-n-propoxide oxide, vanadium triisobutoxide oxide, iron ethoxide, tungsten ethoxide, samarium isopropoxide, iron isopropoxide, cobalt methoxyethoxide, and lanthanium methoxyethoxide;
the organosilane comprises an organofunctional silane represented by Formula III:
(R2)4\u2212cSi(X2)c\u2003\u2003(III)
wherein c is 1 to 4, each X2 is individually an alkoxy group containing from 1 to about 4 carbon atoms, and each R2 is individually a hydrogen or an organofunctional containing organic group containing from about 1 to about 24 carbon atoms including at least one from the group consisting of heterocyclic, acryloxy, amino, amide, vinyl, epoxy, glycidoxy, alkyl, a carbon carbon triple bond containing group, mercapto, siloxy, halocarbon, and a carbon carbon double bond containing group; and
the boron oxide compound is selected from the group consisting of boric acid, boron tri-n-butoxide, boron tri-sec-butoxide, boron tri-t-butoxide, boron triisopropoxide, boron tri-n-propoxide, boron trimethoxide, boron triethoxide, hydroxy boron diisopropoxide, hydroxy boron diethoxide, hydroxy boron dimethoxide, hydroxy boron dibutoxide, dihydroxy boron isopropoxide, dihydroxy boron ethoxide, dihydroxy boron methoxide, dihydroxy boron butoxide, phenylboronic acid, 3-acetylphenylboronic acid, 4-acetylphenylboronic acid, 5-chlorothiophene-2-boronic acid, 1,4-phenylenebis(boronic acid), (2-carboxyphenyl)boronic acid, (3-carboxyphenyl)boronic acid, (4-carboxyphenyl)boronic acid, (3,4-methylenedioxyphenyl)boronic acid, 4-methylthio)phenylboronic acid, naphthalene-1-boronic acid, naphthalene-2-boronic acid, 8-quinolineboronic acid, benzothiophene-2-boronic acid, (2-acetylaminophenyl)boronic acid, (3-acetylaminophenyl)boronic acid, 4-acetylaminophenyl)boronic acid, (3-methoxycarbonylphenyl)boronic acid, (4-methoxycarbonylphenyl)boronic acid, and (4-methyl-1-naphthalene)boronic acid.
6. The nanocomposite of claim 1, wherein the liquid is water and an organic solvent.
7. The nanocomposite of claim 1, wherein the metal oxide sol composition is made by mixing from about 10% to about 60% by weight of at least one metal alkoxide, from about 25% to about 80% by weight of at least one organosilane, and from about 5% to about 50% by weight of at least one boron oxide compound.
8. A dried nanocomposite, comprising:
from about 0.01% to about 80% by weight of at least one guest metal nanoparticle; and
from about 20% to about 99.99% by weight of a metal oxide sol composition, comprising:
from about 15% to about 60% by weight of at least one metal oxide, wherein the metal is a transition metal, a post-transition metal, an alkali metal, or alkaline earth metal;
from about 25% to about 75% by weight of at least one organosilane; and
from about 5% to about 30% by weight of at least one boron oxide compound,
wherein the dried nanocomposite comprises less than about 0.5% by weight water.
9. The dried nanocomposite of claim 8, wherein the guest metal nanoparticle comprises at least one noble metal atom selected from the group consisting of gold, silver, platinum, palladium, iridium, rhenium, mercury, ruthenium, rhodium, copper, and osmium andor at least one non-noble metal atom selected from the group consisting of iron, cobalt, vanadium, chromium, manganese, molybdenum, nickel, lead, cadmium, niobium, technetium, and tungsten.
10. The dried nanocomposite of claim 8, wherein the guest metal nanoparticle comprises at least one selected from the group consisting of gold hydroxide, gold acetate, gold chloride, platinum chloride, silver acetylacetonate, silver citrate, silver lactate, silver nitrate, platinum acetylacetonate, palladium acetylacetonate, palladium acetate, palladium hydroxide, ruthenium acetylacetonate, copper ethoxide, Fe(CO)5, Fe2(CO)9, Co2(CO)8, V(CO)6, Cr(CO)6, Mn2(CO)10, Re2(CO)10, Ru3(CO)12, Mo(CO)6, OS(CO)5, OS3(CO)12, Ir4(CO)12, W(CO)6, Tc2(CO)10, Ru(CO)5, Rh(CO)12, Pd(CO)4, Pt(CO)4, and platinum-1,3-divinyl-1,1,3,3,-tetramethyldisiloxane.
11. A dielectric composite comprising:
from about 1% to about 99.99% by weight of a dielectric material;
from about 0.01% to about 99% by weight of a nanocomposite substantially uniformly dispersed within the dielectric material, the nanocomposite comprising from about 0.01% to about 80% by weight of at least one guest metal nanoparticle; and from about 20% to about 99.99% by weight of a metal oxide sol made by mixing at least one metal oxide, wherein the metal is a transition metal, a post-transition metal, an alkali metal, or alkaline earth metal, at least one organosilane; at least one boron oxide compound selected from the group consisting of boric acid, alkoxy boron compounds, hydrocarbyl boric acids, hydrocarbyl hydroxy boron alkoxides, and hydroxy boron alkoxides, and a liquid.
12. The dielectric composite of claim 11, wherein the composite composition comprises from about 20% to about 99.9% by weight of the dielectric material and from about 0.1% to about 80% by weight of the nanocomposite.
13. The dielectric composite of claim 11, wherein the dielectric material comprises at least one selected from the group consisting of a polymer, a glass, and a ceramic material.
14. The dielectric composite of claim 11, wherein the dielectric material comprises at least one selected from the group consisting of a polyacrylate, an unsaturated polyester, a saturated polyester, a polyolefin, an alkyd resin, an epoxy polymer, a polyamide, a polyimide, a polyetherimide, a polyamideimide, a polyesterimide, a polyesteramideimide, polyurethanes, polycarbonates, polystyrenes, polyphenols, polyvinylesters, polysilicones, polyacetals, cellulose acetates, polyvinylchlorides, polyvinylacetates, polyvinyl alcohols polysulfones, polyphenylsulfones, polyethersulfones, polyketones, polyetherketones, poyletheretherketones, polybenzimidazoles, polybemzoxazoles, polybenzthiazoles, polyfluorocarbones, polyphenylene ethers, polyarylates, cyanate ester polymers, and copolymers of two or more thereof.
15. The dielectric composition of claim 11, wherein the guest metal nanoparticle comprises at least one noble metal atom selected from the group consisting of gold, silver, platinum, palladium, iridium, rhenium, mercury, ruthenium, rhodium, copper, and osmium andor at least one non-noble metal atom selected from the group consisting of iron, cobalt, vanadium, chromium, manganese, molybdenum, nickel, lead, cadmium, niobium, technetium, and tungsten.
16. The dielectric composite of claim 11, wherein the guest metal nanoparticle comprises at least one selected from the group consisting of gold hydroxide, gold acetate, gold chloride, platinum chloride, silver acetylacetonate, silver citrate, silver lactate, silver nitrate, platinum acetylacetonate, palladium acetylacetonate, palladium acetate, palladium hydroxide, ruthenium acetylacetonate, copper ethoxide, Fe(CO)5, Fe2(CO)9, Co2(CO)8, V(CO)6, Cr(CO)6, Mn2(CO)10, Re2(CO)10, Ru3(CO)12, Mo(CO)6, Os(CO)5, Os3(CO)12, Ir4(CO)12, W(CO)6, Tc2(CO)10, Ru(CO)5, Rh(CO)12, Pd(CO)4, Pt(CO)4, and platinum-1,3-divinyl-1,1,3,3,-tetramethyldisiloxane.
17. The dielectric composite of claim 11, wherein the metal oxide sol comprises from about 15% to about 60% by weight of at least one metal alkoxide; from about 25% to about 75% by weight of at least one organosilane; and from about 5% to about 30% by weight of at least one boron oxide compound.
18. A method of making the nanocomposite of claim 1, comprising;
mixing at least one guest metal nanoparticle; at least one metal oxide, wherein the metal is a transition metal, a post-transition metal, an alkali metal, or alkaline earth metal; at least one organosilane; at least one boron oxide compound selected from the group consisting of boric acid, alkoxy boron compounds, hydrocarbyl boric acids, hydrocarbyl hydroxy boron alkoxides, and hydroxy boron alkoxides; and a liquid to provide the nanocomposite.
19. The method of claim 18, wherein the metal alkoxide, the organosilane, and the liquid are initially combined, followed by adding the guest metal nanoparticle, and further followed by adding the boron oxide compound.
20. The method of claim 18, wherein the metal alkoxide, the organosilane, the boron oxide compound, and the liquid are initially combined, followed by adding the guest metal nanoparticle.
21. The method of claim 18, wherein the metal alkoxide, the guest metal nanoparticles, and the liquid are initially combined, followed by adding the organosilane, and further followed by adding the boron compound.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A inductor-capacitor resonance RF switching device comprising:
a microelectronic mechanical switch comprising:
a first dielectric layer overlying substrate;
a down electrode overlying said first dielectric layer;
a second dielectric layer overlying said down electrode;
a bridge post overlying said first dielectric layer but not overlying said down electrode; and
a membrane suspended over said down electrode wherein one end of said membrane is fixed to the top of said bridge post, wherein an electrostatic potential between said membrane and said down electrode will cause said membrane to flex down toward said down electrode, and wherein said flexing of said membrane will cause the capacitance of said switching device to vary; and
a spiral inductor comprising a metal line configured in a spiraling pattern with a first end connected to said bridge post and a second end forming an output node.
2. The device according to claim 1 further comprising:
an input signal line connected to said down electrode; and
a ground reference connected to said output node to thereby form a shunt configuration.
3. The device according to claim 1 further comprising:
an input signal line connected to said down electrode; and
an output signal line connected to said output node to thereby form a series configuration.
4. The device according to claim 1 further comprising an up electrode wherein said up electrode overlies said down electrode with said second dielectric layer therebetween and wherein said flexing downward causes said membrane to contact said up electrode.
5. The device according to claim 1 wherein said membrane and said bridge post comprise metal.
6. The device according to claim 1 wherein said membrane has a thickness of between about 5,000 Angstroms and 25,000 Angstroms.
7. The device according to claim 1 wherein said membrane and said bridge post are formed by a dual damascene process.
8. The device according to claim 1 further comprising a second bridge post wherein said second bridge post is opposite said bridge post and wherein a second end of said membrane is fixed to the top of said second bridge post such that the combination of said bridge post, said second bridge post, and said membrane forms a bridge profile.
9. The device according to claim 1 wherein said capacitance value in DOWN state is between about 10 fF and 30 pF.
10. The device according to claim 1 wherein said spiral inductor value is between about 1 nH and 30 nH.
11. The device according to claim 1 wherein said capacitance and said spiral inductor create a resonant frequency in DOWN state of between about 1 GHz and 100 GHz.
12. A inductor-capacitor resonance RF switching device comprising:
a microelectronic mechanical switch comprising:
a first dielectric layer overlying a substrate;
a down electrode overlying said first dielectric layer;
a second dielectric layer overlying said down electrode;
an up electrode overlying said down electrode with said second dielectric layer therebetween;
a bridge post overlying said first dielectric layer but not overlying said down electrode and said up electrode; and
a membrane suspended over said up electrode wherein one end of said membrane is fixed to top of said bridge post, wherein an electrostatic potential between said membrane and said down electrode will cause said membrane to flex down toward said down electrode, wherein said flexing downward causes said membrane to contact said up electrode, and wherein said flexing of said membrane will cause the capacitance of said LCR-RF switching device to vary; and
a spiral inductor comprising a metal line configured in a spiraling pattern with a first end connected to said bridge post and a second end forming an output node.
13. The device according to claim 12 further comprising:
an input signal line connected to said down electrode; and
a ground reference connected to said output node to thereby form a shunt configuration.
14. The device according to claim 12 further comprising:
an input signal line connected to said down electrode; and
an output signal line connected to said output node to thereby form a series configuration.
15. The device according to claim 12 wherein said membrane and said bridge post comprise metal.
16. The device according to claim 12 wherein said membrane has a thickness of between about 5,000 Angstroms and 25,000 Angstroms.
17. The device according to claim 12 wherein said membrane and said bridge post are formed by a dual damascene process.
18. The device according to claim 12 further comprising a second bridge post wherein said second bridge post is opposite said bridge post and wherein a second end of said membrane is fixed to the top of said second bridge post such that the combination of said bridge post, said second bridge post, and said membrane forms a bridge profile.
19. The device according to claim 12 wherein said capacitance in DOWN state is between about 10 fF and 30 pF.
20. The device according to claim 12 wherein said spiral inductor value is between about 1 nH and 30 nH.
21. The device according to claim 12 wherein said capacitance and said spiral inductor create a resonant frequency in DOWN state of between about 1 GHz and 100 GHz.
22. A multiple channel, series-configured, switching circuit comprising a plurality of MEMS capacitor and spiral inductor pairs, wherein in each said pair, a first end of each said spiral inductor is connected to a bridge post of each said MEMS capacitor, wherein down electrodes of all said MEMS capacitors are connected to a single input signal, wherein a second end of each said spiral inductor forms a plurality of output signals, and wherein activation of any said MEMS capacitor in any said pair causes said input signal to flow to said output signal for said pair.
23. The circuit according to claim 22 wherein each said MEMS capacitor has an up electrode.
24. A method to form a microelectronic mechanical switch device in the manufacture of an integrated circuit device comprising:
providing a down electrode overlying a substrate with a first dielectric layer therebetween;
providing a second dielectric layer overlying said down electrode layer;
forming an up electrode overlying said second dielectric layer;
depositing a first silicon dioxide layer overlying said up electrode and said second dielectric layer;
depositing a silicon nitride layer overlying said first silicon oxide layer;
depositing a second silicon dioxide layer overlying said silicon nitride layer;
patterning said first silicon dioxide layer, said silicon nitride layer, said first silicon dioxide layer, and said second dielectric layer to form deep trenches for planned bridge posts;
patterning said second silicon dioxide layer and said silicon nitride layer to form shallow trenches for planned membrane wherein said second silicon dioxide layer and said silicon nitride layer are etched through to said first silicon dioxide layer and wherein said shallow trenches connect to said deep trenches;
depositing a metal layer overlying said second silicon dioxide layer, said silicon nitride layer, said first silicon dioxide layer, and said second dielectric layer to fill said deep trenches and said shallow trenches;
polishing down said metal layer to said second silicon dioxide layer to complete said bridge posts and said membrane; and
etching away said second silicon dioxide layer, said silicon nitride layer and said first silicon dioxide layer to release said membrane and to complete said microelectronic mechanical switch device in the manufacture of said integrated circuit device.
25. The method according to claim 24 wherein said first silicon dioxide layer is deposited to a thickness of between about 5,000 Angstroms and 45,000 Angstroms.
26. The method according to claim 24 wherein said silicon nitride layer is deposited to a thickness of between about 300 Angstroms and 2,000 Angstroms.
27. The method according to claim 24 wherein said polishing down is by a chemical mechanical polish.
28. The method according to claim 24 wherein said membrane has a thickness of between about 5,000 Angstroms and 25,000 Angstroms.
29. The method according to claim 24 wherein said step of patterning said second silicon dioxide layer, said silicon nitride layer, said first silicon dioxide layer, and said second dielectric layer to form deep trenches for planned bridge posts further comprises forming deep trenches for planned microstrip lines, wherein said step of depositing a metal layer further comprises filling said deep trenches for planned microstrip lines, and wherein said step of polishing down said metal layer further comprises completing said microstrip lines.
30. The method according to claim 24 wherein said step of patterning said second silicon dioxide layer, said silicon nitride layer, said first silicon dioxide layer, and said second dielectric layer to form deep trenches for planned bridge posts further comprises forming deep trenches for planned spiral inductors, wherein said step of depositing a metal layer further comprises filling said deep trenches for planned spiral inductors, and wherein said step of polishing down said metal layer further comprises completing said spiral inductors.