1. An optical module, comprising:
at least one light-receiving element configured to convert an incident optical signal to an electric signal, the at least one light-receiving element including;
a mesa part configured to laminate at least a first semiconductor layer, a light absorption semiconductor layer that absorbs an optical signal entering from a light reception surface, and a second semiconductor layer,
an electrode part disposed on a top of the mesa part, and
a wiring part that covers a part of a side surface of the mesa part and that is disposed so as to extend from a part of an outer periphery of the electrode part toward an outside of the mesa part; and
a lens configured to condense an optical signal from an optical fiber onto the light reception surface of the at least one light-receiving element,
wherein the wiring part is disposed at a position based on an intensity distribution of the optical signal on the light reception surface.
2. The optical module according to claim 1, wherein the wiring part is disposed along a longitudinal direction of the intensity distribution.
3. The optical module according to claim 2, wherein the intensity distribution has an elliptical shape, and wherein the wiring part is disposed along a long axis direction of the elliptical shape.
4. The optical module according to claim 1, wherein a center of the light reception surface of the at least one light-receiving element is disposed so as to be deviated to a first direction perpendicular to an optical axis of the lens, and wherein the wiring part is disposed at a position along a second direction opposite to the first direction.
5. The optical module according to claim 4, wherein the at least one light-receiving element comprises a back-illuminated light-receiving element.
6. The optical module according to claim 1, wherein the at least one light-receiving element is disposed so as to incline a normal direction of the light reception surface with respect to an optical axis of the lens, and wherein the wiring part is disposed at a position along a direction of the inclination.
7. The optical module according to claim 6, wherein the at least one light-receiving element comprises one of a back-illuminated light-receiving element and a front-illuminated light-receiving element.
8. The optical module according to claim 1, further comprising: a plurality of band-pass filters aligned in line, through which the optical signal from the optical fiber enters; and
a total reflection mirror which reflects the optical signal reflected on surfaces of the plurality of band-pass filters and which is disposed in opposite to the plurality of band-pass filters;
wherein the at least one light-receiving element comprises a plurality of the light-receiving elements aligned in a predetermined interval, and
wherein the condenser lens condenses each of the optical signals exited from the plurality of band-pass filters onto each of the light reception surfaces of the plurality of the light-receiving elements.
9. The optical module according to claim 1,
wherein the mesa part further includes a reflection layer between the light absorption semiconductor layer and the first semiconductor layer,
wherein the electrode part has a ring shape, and
wherein the optical signal from the optical fiber enters via the lens to the mesa part and is absorbed in the light absorption semiconductor layer, and thereafter, at least apart of the optical signal is further reflected in the reflection layer.
10. An optical module, comprising:
a light-receiving element configured to convert an incident optical signal to an electric signal, the light-receiving element including:
a mesa part configured to laminate at least a first semiconductor layer, a light absorption semiconductor layer that absorbs an optical signal entering from a light reception surface to convert the optical signal to an electric signal, and a second semiconductor layer;
an electrode part formed on a top of the mesa part; and
a wiring part formed by elongating from a part of an outer periphery of the electrode part toward an outside of the mesa part so as to cover a part of side faces of the mesa part; and
a lens for condensing an optical signal from an optical fiber onto the light reception surface of the light-receiving element,
wherein a center axis of the light reception surface of the light-receiving element is disposed so as to be deviated to a first direction perpendicular to an optical axis of the lens, and
wherein the wiring part is disposed at a position along a second direction opposite to the first direction.
11. The optical module according to claim 10, wherein the light-receiving element comprises a back-illuminated light-receiving element.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A silicon solar cell having at least one contacting, comprising:
a pre-processed silicon substrate having a frontside and a backside;
an aluminum layer on the backside of the pre-processed silicon substrate comprising
an outer surface, and
aluminum-free regions arranged in the form of arrays; and
a silver-free layer suitable for soldering, the silver-free layer suitable for soldering covering the aluminum-free regions and substantially covering the entire outer surface of the aluminum layer on the backside.
2. The silicon solar cell of claim 1, a dielectric layer being provided on the backside of the pre-processed silicon substrate beneath the aluminum layer, the dielectric layer comprising at least one of the subsequent compounds: silicon nitride, silicon oxide, silicon carbide, amorphous silicon, aluminum oxide.
3. The silicon solar cell of claim 1, wherein spot-like electrical connections between the aluminum layer and the pre-processed silicon substrate are provided.
4. The silicon solar cell of claim 1, wherein aluminum contact points between the aluminum layer and the pre-processed silicon substrate are provided.
5. The silicon solar cell of claim 1, the aluminum layer comprising a thickness of 10 to 100 \u03bcm and the silver-free layer suitable for soldering having a thickness of 10 to 100 nm.
6. The silicon solar cell of claim 1, the arrays of aluminum-free regions being arranged in rows.
7. The silicon solar cell of claim 1, the arrays of aluminum-free regions having a width of less than 1 mm.
8. The silicon solar cell of claim 1, the arrays of aluminum-free regions having a width of less than 0.5 mm.
9. The silicon solar cell of claim 1, the silver-free layer suitable for soldering consisting of any of nickel-vanadium, nickel, copper, tin and zinc.
10. A silicon solar cell comprising:
a pre-processed silicon substrate having a frontside and a backside and contact regions for connecting to further solar cells;
an aluminum layer positioned on the backside of the silicon substrate and having an outer surface;
at least one first contact region for forming an electrical connection on the backside of the pre-processed silicon substrate, the first contact region comprising a silver-free layer suitable for soldering on the aluminum layer and substantially covering the entire outer surface of the aluminum layer, and
at least a second contact region for forming a mechanical connection on the backside of the pre-processed silicon substrate, the second contact region comprising a silver-free layer suitable for soldering in an aluminum-free region of the silicon substrate.
11. The silicon solar cell of claim 10, the pre-processed silicon substrate comprising a dielectric layer beneath the aluminum layer.
12. The silicon solar cell of claim 11, the area of the first contact region being at least ten times larger than the area of the second contact region.