1. A system for automated transfer of articles from a cart to a transfer surface, the system comprising:
a cart having a shelf for carrying articles and a fin over the shelf;
a cart drive mechanism located over the cart which contacts the fin to drive the cart along a driven cart path and past a stationary diverter arm;
the diverter arm extending laterally into the driven cart path and over the shelf of the cart to contact an object on the shelf and laterally divert the object off of the shelf on to a transfer surface.
2. The system of claim 1 wherein the cart further comprises a flange which extends over a portion of the shelf, and a distal end of the diverter arm fits between the flange and the shelf as the cart passes the diverter arm.
3. A system for transfer of articles from a cart, the system comprising:
a cart having a shelf for carrying articles and a fin located over the shelf;
a cart drive mechanism located over the cart which contacts the fin to drive the cart along a cart path and past a stationary diverter arm;
the diverter arm extending laterally into the cart path and over the shelf of the cart to contact an object on the shelf and laterally divert the object off of the shelf.
4. The system of claim 3 wherein the cart further comprises a flange which extends over a portion of the shelf, and a distal end of the diverter arm fits between the flange and the shelf as the cart passes the diverter arm.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method comprising:
pulsing a dopant perpendicular to an upper surface of a substrate, forming an implantation beam pulse;
applying an electric field and a magnetic field simultaneously, at a target fin of a fin-type field effect transistor (FINFET), to the implantation beam pulse to effectuate a curvilinear trajectory path of the implantation beam pulse;
varying the curvilinear trajectory path of the implantation beam pulse by varying a direction of the electric field and the magnetic field; and
implanting the dopant onto a sidewall surface of the target FINFET fin on the upper surface of the substrate via the curvilinear trajectory path of the implantation beam pulse.
2. The method of claim 1, further comprising:
masking top and sidewall surfaces of one or more other FINFET fins adjacent to the target FINFET fin to prevent implantation of the one or more other FINFET fins with the dopant.
3. (canceled)
4. The method of claim 1, further comprising:
varying the curvilinear trajectory path of the implantation beam pulse by varying a strength of the electric field and the magnetic field.
5. The method of claim 1, wherein the electric field and the magnetic field are pulsed in synchronization with the implantation beam pulse.
6. The method of claim 1, wherein concentration levels of the dopant at a top surface and at a plurality of sidewall surfaces of the target FINFET fin are substantially the same.
7. The method of claim 6, wherein depths of the concentration levels of the dopant at the top surface and at the plurality of sidewall surfaces of the target FINFET fin are substantially the same.
8. The method of claim 1, wherein the curvilinear trajectory path is at an angle greater than 0 degree and less than 90 degrees with a reference to the sidewall surface of the target FINFET fin.
9. The method of claim 8, further comprising:
applying a plurality of electric fields in different directions to the implantation beam pulse to effectuate the angle in the curvilinear trajectory path.
10. A device comprising:
a substrate having an upper surface;
a fin-type field effect transistor (FINFET) fin formed on the upper surface; and
a top surface and a plurality of side surfaces of the FINFET fin implanted with a dopant, wherein concentration levels of the dopant at the top surface and at the plurality of side surfaces of the FINFET fin are substantially same, and
wherein the dopant is implanted via an implantation beam pulse varied by at least one electric field and at least one magnetic field simultaneously applied at the FINFET fin.
11. (canceled)
12. The device of claim 10, wherein depths of the concentration levels of the dopant at the top surface and at the plurality of side surfaces of the FINFET fin are substantially same.
13. A method comprising:
forming a plurality of fin-type field effect transistor (FINFET) fins on an upper surface of a substrate, wherein each pair of adjacent FINFET fins is separated by a trench along the upper surface of the substrate;
masking top and sidewall surfaces of one or more of the plurality of FINFET fins adjacent to a target FINFET fin in the plurality of FINFET fins;
pulsing a dopant perpendicular to the upper surface of the substrate, forming an implantation beam pulse;
applying an electric field and a magnetic field simultaneously, at the target fin of the FINFET, to the implantation beam pulse to effectuate a curvilinear trajectory path of the implantation beam pulse;
varying the curvilinear trajectory path of the implantation beam pulse by varying a direction of the electric field and the magnetic field; and
implanting the dopant onto a sidewall surface of the target FINFET fin via the curvilinear trajectory path of the implantation beam pulse.
14. (canceled)
15. The method of claim 13, further comprising:
varying the curvilinear trajectory path of the implantation beam pulse by varying a strength of the electric field and the magnetic field.
16. The method of claim 13, wherein the electric field and the magnetic field are pulsed in synchronization with the implantation beam pulse.
17. The method of claim 13, wherein concentration levels of the dopant at a top surface and at a plurality of sidewall surfaces of the target FINFET fin are substantially the same.
18. The method of claim 17, wherein depths of the concentration levels of the dopant at the top surface and at the plurality of sidewall surfaces of the target FINFET fin are substantially the same.
19. The method of claim 13, wherein the curvilinear trajectory path is at an angle greater than 0 degree and less than 90 degrees with a reference to the sidewall surface of the target FINFET fin.
20. The method of claim 19, further comprising:
applying a plurality of electric fields in different directions to the implantation beam pulse to effectuate the angle in the curvilinear trajectory path.