1. A semiconductor device comprising:
a substrate;
at least one MOSFET adjacent said substrate and comprising a superlattice channel including a plurality of stacked groups of layers, a source and a drain adjacent said superlattice channel, and a gate adjacent said superlattice channel;
each group of layers of said superlattice channel comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
a first dopant in at least one region adjacent at least one of said source and drain; and
a second dopant in the at least one region, said second dopant being different than said first dopant and reducing diffusion thereof.
2. The semiconductor device of claim 1 wherein the at least one region comprises a halo region adjacent said source and drain.
3. The semiconductor device of claim 1 wherein the at least one region comprises a source extension region adjacent said source and a drain extension region adjacent said drain.
4. The semiconductor device of claim 1 wherein the at least one region comprises a deep source region adjacent said source and a deep drain region adjacent said drain.
5. The semiconductor device of claim 1 wherein said first dopant comprises boron.
6. The semiconductor device of claim 1 wherein said second dopant comprises at least one of nitrogen, germanium, fluorine, aluminum, gallium, indium, and carbon.
7. The semiconductor device of claim 1 further comprising a contact layer on at least one of said source and drain.
8. The semiconductor device of claim 1 wherein each base semiconductor portion comprises silicon.
9. The semiconductor device of claim 1 wherein each base semiconductor portion comprises germanium.
10. The semiconductor device of claim 1 wherein said at least one non-semiconductor layer comprises oxygen.
11. The semiconductor device of claim 1 wherein said at least one non-semiconductor monolayer comprises a non-semiconductor selected from the group consisting of oxygen, nitrogen, fluorine, and carbon-oxygen.
12. The semiconductor device of claim 1 wherein said gate comprises an oxide layer overlying said superlattice channel and a gate electrode overlying said oxide layer.
13. The semiconductor device of claim 1 wherein said superlattice channel further comprises a base semiconductor cap layer on an uppermost group of layers.
14. The semiconductor device of claim 1 wherein at least some semiconductor atoms from opposing base semiconductor portions are chemically bound together through said non-semiconductor layer therebetween.
15. A method for making a semiconductor device comprising:
forming at least one MOSFET adjacent a substrate, the at least one MOSFET comprising a superlattice channel including a plurality of stacked groups of layers, a source and a drain adjacent the superlattice channel, a gate adjacent the superlattice channel, a first dopant in at least one region adjacent at least one of the source and drain, and a second dopant in the at least one region, the second dopant being different than the first dopant and reducing diffusion thereof;
each group of layers of the superlattice channel comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
16. The method of claim 15 wherein the at least one region comprises a halo region adjacent the source and drain.
17. The method of claim 15 wherein the at least one region comprises a source extension region adjacent the source and a drain extension region adjacent the drain.
18. The method of claim 15 wherein the at least one region comprises a deep source region adjacent the source and a deep drain region adjacent the drain.
19. The method of claim 15 wherein the first dopant comprises boron.
20. The method of claim 15 wherein the second dopant comprises at least one of nitrogen, germanium, fluorine, aluminum, gallium, indium, and carbon.
21. The method of claim 15 wherein forming further comprises co-implanting the first and second dopants in the at least one region.
22. The method of claim 15 further comprising forming a contact layer on at least one of the source and drain regions.
23. The method of claim 15 wherein each base semiconductor portion comprises silicon.
24. The method of claim 15 wherein each base semiconductor portion comprises germanium.
25. The method of claim 15 wherein the at least one non-semiconductor layer comprises oxygen.
26. The method of claim 15 wherein the at least one non-semiconductor monolayer comprises a non-semiconductor selected from the group consisting of oxygen, nitrogen, fluorine, and carbon-oxygen.
27. The method of claim 15 wherein the gate comprises an oxide layer overlying the superlattice channel and a gate electrode overlying the oxide layer.
28. The method of claim 15 wherein the superlattice channel further comprises a base semiconductor cap layer on an uppermost group of layers.
29. The method of claim 15 wherein at least some semiconductor atoms from opposing base semiconductor portions are chemically bound together through the non-semiconductor layer therebetween.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A teat unit including a teat, a securing device for securing the teat on a liquid container, and an air valve, the securing device having a first securing part and a second securing part, and the air valve having at least a first valve part and a second valve part, wherein the first and second securing parts are each rigid, at least in the area of the air valve, wherein
a) the first valve part is arranged in the first securing part, and the second valve part is arranged in the second securing part; or
b) the air valve opens or closes with respect to the second securing part and the first valve part and the second valve part are arranged in the first securing part, wherein the first securing part has an annular main body and a truncated cone formed integrally in the annular main body, wherein a liquid through-flow channel extends along a longitudinal center axis of the truncated cone, and wherein the diaphragm of the air valve is arranged in a circumferential surface of the truncated cone.
2. The teat unit according to claim 1, wherein the teat can be clamped sealingly between the two securing parts.
3. The teat unit according to claim 1, wherein the air valve is a diaphragm valve, and the first part is a valve diaphragm.
4. The teat unit according to claim 1, wherein the first and second securing parts can be connected to each other.
5. The teat unit according to claim 1, wherein the teat is arranged independently of the air valve.
6. The teat unit according to claim 1, wherein the first and second securing parts form an air channel that opens into at least one air opening leading to the outside.
7. The teat unit according to claim 1, wherein the diaphragm has an air through-flow opening that is designed permanently open and that can be closed by means of the second securing part.
8. The teat unit according to claim 7, wherein the air through-flow opening is strengthened at a circumference of the air through-flow opening.
9. The teat unit according to claim 7, wherein the air through-flow opening is circular, elliptical, oval or annular.
10. The teat unit according to claim 7, wherein the diaphragm has a substantially planar main surface and a truncated cone arranged in the main surface, the air through-flow opening being arranged in the truncated cone.
11. The teat unit according to claim 1, wherein the diaphragm is secured about an entire periphery of the diaphragm in the first securing part.
12. The teat unit according to claim 1, wherein the first securing part has a circumferential sealing ring for bearing in a leaktight manner on an end face of the liquid container, and wherein the diaphragm and the sealing ring are preferably designed together in one piece.
13. The teat unit according to claim 1, wherein the first securing part is a base part and the second securing part is a receiving head, wherein the receiving head and the base part can be connected to each other via a releasable plug connection, wherein the receiving head for this purpose has plug elements that can be plugged into the base part and that are designed to secure the assembled base part and receiving head on the liquid container.
14. The teat unit according to claim 1, wherein the diaphragm of the air valve is substantially flush with the circumferential surface of the truncated cone.
15. A nipple apparatus for a feeding bottle having a pressure regulating feature, comprising:
a flexible teat having an internal conduit through which liquid passes from a supply to an exit port;
a securing device attaching said teat to a container, said securing device having first and second securing parts, said first securing part being located toward a container interior relative to said second securing part;
a valve element provided on said first securing part, said valve element having a first valve part which is movable relative to said first securing part, with an orifice formed in said first valve part communicating with the container interior, said second securing part having a portion against which said first valve part engages to thereby close said orifice in a first state;
a channel for ambient air to enter between said first and second securing parts and pass through said orifice into the container interior in a second state, said channel being closed to the container interior in said first state, the container interior otherwise being sealed against entry of air by said securing device;
said first valve part moving away from said portion of said second securing part and toward the container interior upon removal of liquid through said teat internal conduit to thereby open said channel for air to pass, the removal of liquid creating an underpressure in the container interior in said second state.
16. A teat unit including a teat, a securing device for securing the teat on a liquid container, and an air valve, the securing device having a first securing part and a second securing part, and the air valve having at least a first valve part and a second valve part, wherein
a) the first valve part is arranged in the first securing part, and the second valve part is arranged in the second securing part; or
b) the air valve opens or closes with respect to the second securing part and the first valve part and the second valve part are arranged in the first securing part; and
wherein the first securing part is a base part and the second securing part is a receiving head, wherein the receiving head and the base part can be connected to each other via a releasable plug connection, wherein the receiving head for this purpose has plug elements that can be plugged into the base part and that are designed to secure the assembled base part and receiving head on the liquid container.
17. A teat unit including a teat, a securing device for securing the teat on a liquid container, and an air valve, the securing device having a first securing part and a second securing part, and the air valve having at least a first valve part and a second valve part, wherein
a) the first valve part is arranged in the first securing part, and the second valve part is arranged in the second securing part; or
b) the air valve opens or closes with respect to the second securing part and the first valve part and the second valve part are arranged in the first securing part; and
wherein the first securing part has an annular main body and a truncated cone formed integrally in the annular main body, wherein a liquid through-flow channel extends along a longitudinal center axis of the truncated cone, and wherein the diaphragm of the air valve is arranged in a circumferential surface of the truncated cone.