1. A vertical type semiconductor device, comprising:
a pillar structure having a stacking structure of a conductive layer and a data storage material and formed over a common source region; and
a gate electrode formed to surround the data storage material of the pillar structure,
wherein the data conductive layer and the data storage material are sequentially stacked.
2. The vertical type semiconductor device of claim 1, wherein the data storage material includes a phase-change material.
3. The vertical type semiconductor device of claim 1, wherein the data storage material has a stacking structure of a crystalline phase-change material, an amorphous phase-change material, and a crystalline phase-change material.
4. The vertical type semiconductor device of claim 1, wherein the data storage material includes Perovskite or transition metal oxide.
5. The vertical type semiconductor device of claim 1, wherein the data storage material has a stacking structure of a first barrier metal layer, a Perovskite layer, and a second barrier metal layer or a stacking structure of a first barrier metal layer, a transition metal oxide layer, and a second barrier metal layer.
6. The vertical type semiconductor device of claim 1, further comprising a gate insulating layer formed between the pillar structure and the gate electrode.
7. The vertical type semiconductor device of claim 1, further comprising an interconnection layer formed on the data storage material to be electrically connected to the data storage material.
8. The vertical type semiconductor device of claim 1, further comprising an insulating layer formed on a circumference of the conductive layer.
9. The vertical type semiconductor device of claim 1, wherein the common source region includes a metal layer.
10. The vertical type semiconductor device of claim 1, wherein gate electrodes are electrically connected to each other between cells formed in a first direction and gate electrodes are insulated from each other between cells formed in a second direction different from the first direction.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A laminated core arrangement for an electric machine, comprising:
a laminated core including at least two part cores arranged in an axial direction, each of the part cores having a plurality of polygonal individual sheets, with at least one of the individual sheets being round and disposed between the part cores, said at least one round individual sheet having a diameter which is less than or equal to an inner circle of the polygonal individual sheets; and
permanently-excited magnets disposed around a circumference of the laminated core.
2. The laminated core arrangement of claim 1, wherein the magnets adjacent to the at least one round individual sheet touch each other.
3. The laminated core arrangement of claim 1, wherein the magnets are sized to project beyond the part core at at least one end side of the laminated core.
4. The laminated core arrangement of claim 1, wherein the part cores are rotated in relation to one another.
5. An electric machine, comprising a laminated core arrangement which comprises a laminated core including at least two part cores arranged in an axial direction, each of the part cores having a plurality of polygonal individual sheets, with at least one of the individual sheets being round and disposed between the part cores, said at least one round individual sheet having a diameter which is less than or equal to an inner circle of the polygonal individual sheets, and permanently-excited magnets disposed around a circumference of the laminated core.
6. The electric machine of claim 5, wherein the magnets adjacent to the at least one round individual sheet touch each other.
7. The electric machine of claim 5, wherein the magnets are sized to project beyond the part core at at least one end side of the laminated core.
8. The electric machine of claim 5, wherein the part cores are rotated in relation to one another.