What is claimed is:
1. A method for manufacturing a semiconductor device, comprising: forming a light reflective layer, an anti-reflective coating layer over the light-reflective layer, and a material over the anti-reflective coating layer; and using a non-polymerizing oxygen-rich fluorocarbon chemistry to selectively etch the anti-reflective coating layer.
2. A method for manufacturing, according to claim 1, wherein the anti-reflective coating layer is selectively etched with respect to the material over the anti-reflective coating layer.
3. A method for manufacturing, according to claim 1, wherein the anti-reflective coating layer is selectively etched with respect to the light reflective layer.
4. The method of claim 1, wherein the oxygen rich fluorocarbon chemistry includes CHF3.
5. The method of claim 1, wherein the oxygen rich fluorocarbon chemistry includes a relatively large amount of oxygen and a relatively small amount of CHF3.
6. The method of claim 1, wherein the oxygen rich fluorocarbon chemistry includes about 45 ccm of oxygen, and about 5 ccm of CHF3.
7. The method of claim 1, wherein selectively etching the semiconductor device includes etching at low power.
8. The method of claim 1, wherein selectively etching the semiconductor device includes the use of an upper electrode and a lower electrode, wherein the upper electrode is at a power setting of about 200 watts, and the lower electrode is at a power setting of about 100 watts.
9. The method of claim 1, wherein the semiconductor further comprises a photoresist layer, and wherein a significant amount of the resist is ashed while selectively etching the anti-reflective coating layer.
10. The method of claim 1, wherein the anti-reflective coating layer includes SiON, and wherein etching the anti-reflective coating layer includes etching the SiON.
11. The method of claim 1, wherein the light-reflective layer includes TiN, and wherein etching the anti-reflective coating layer leaves the TiN intact.
12. The method of claim 1, wherein the material over the anti-reflective coating layer includes oxide, and wherein etching the anti-reflective coating layer does not include etching the oxide.
13. The method of claim 1, wherein the material over the anti-reflective coating layer includes oxide, wherein the light-reflective layer includes a metal film, and wherein selectively etching the anti-reflective coating layer does not include etching the oxide or the metal film.
14. A method for manufacturing a semiconductor device, comprising: forming a light reflective layer, an anti-reflective coating layer over the light-reflective layer, and a material over the anti-reflective coating layer;
etching material over the anti-reflective coating layer and exposing the antireflective coating layer; and
using a non-polymerizing oxygen-rich fluorocarbon chemistry to selectively etch the anti-reflective coating layer.
15. A method for manufacturing a semiconductor device, according to claim 14, the semiconductor device further including a photoresist layer over the material over the anti-reflective coating layer, wherein etching material over the anti-reflective coating layer includes etching the resist, the method further comprising ashing the resist.
16. A method for manufacturing a semiconductor device, according to claim 14, wherein the light reflective layer remains intact.
17. A method for manufacturing a semiconductor device, according to claim 14, wherein the material over the anti-reflective layer remains intact during the etching of the anti-reflective coating layer.
18. A method for manufacturing a semiconductor device, wherein the semiconductor device includes a light reflective layer, an anti-reflective coating layer over the light-reflective layer, and a material over the anti-reflective coating layer, the method comprising:
using non-polymerizing means to selectively etch the anti-reflective coating layer with respect to the light-reflective layer and the material over the anti-reflective coating layer.
19. A semiconductor device manufactured according to claim 18.
20. A semiconductor device manufactured according to claim 1.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method for marking a semiconductor device, comprising:
providing energy reactive marking material over a surface of the semiconductor device; and
exposing at least selected portions of at least one of said surface and said energy reactive marking material to energy to form of a mark on said surface without substantially creating an imprint in said surface.
2. The method of claim 1, wherein said providing comprises directing a stream of said energy reactive marking material at least proximate selected portions of said surface.
3. The method of claim 1, wherein said providing comprises disposing an energy reactive marking material comprising a pigment onto said surface.
4. The method of claim 1, wherein said providing comprises disposing a quickly curing energy reactive marking material onto said surface.
5. The method of claim 1, wherein said providing comprises dispensing said energy reactive marking material onto said surface.
6. The method of claim 1, wherein said providing comprises rolling said energy reactive marking material onto said surface.
7. The method of claim 1, wherein said exposing comprises placing the packaged semiconductor device in a path of an energy beam.
8. The method of claim 7, further comprising translating said energy with said stream of said energy reactive marking material.
9. The method of claim 1, wherein said exposing effects a color reaction of said energy reactive marking material.
10. The method of claim 1, wherein said exposing effects an absorption of energy by said energy reactive marking material.
11. The method of claim 1, wherein said exposing and said providing form said mark with a non-wet finish.
12. The method of claim 1, wherein said exposing comprises exposing said selected portions to a laser beam.
13. The method of claim 1, wherein said exposing comprises exposing said selected portions to focused light.
14. The method of claim 1, wherein said exposing comprises exposing said selected portions to heat.
15. The method of claim 1, further comprising inspecting a quality of said mark.
16. The method of claim 15, further comprising rejecting the packaged semiconductor device if said mark is not within selected quality control parameters.
17. The method of claim 1, further comprising exposing said selected portions to a coolant either during or immediately subsequent to said exposing at least selected portions to energy.
18. The method of claim 1, wherein said providing and said exposing occur without damaging or decomposing said surface.
19. The method of claim 1, wherein said exposing is effected either substantially simultaneously with said providing or immediately thereafter.
20. The method of claim 1, wherein said exposing and said providing effect at least one of fusing and bonding energy reactive marking material to said surface.
21. The method of claim 1, further comprising removing an unused quantity of said energy reactive marking material from said surface.
22. A semiconductor device including a surface with a marking thereon, said marking comprising energy-reacted material on said surface without being substantially recessed in said surface.
23. The semiconductor device of claim 22, wherein said energy-reacted material comprises a pigment.
24. The semiconductor device of claim 22, wherein said energy-reacted material of said marking is at least partially laterally surrounded by unreacted energy-reactive material.
25. The semiconductor device of claim 24, wherein a color of said energy-reacted material is visibly different from a color of said unreacted energy-reactive material.
26. The semiconductor device of claim 22, wherein said marking has a non-wet finish.
27. The semiconductor device of claim 22, wherein regions of said surface beneath and laterally adjacent said marking are substantially free of decomposition and damage.
28. The semiconductor device of claim 22, wherein said marking is at least one of bonded or fused to said surface.
29. The semiconductor device of claim 22, wherein said surface on which said marking is located comprises a surface of a packaging material.
30. The semiconductor device of claim 22, wherein said surface on which said marking is located comprises a surface of a semiconductor die.