1. A non-volatile memory device comprising:
a tunnel layer on an active region, said tunnel layer comprising a silicon oxide layer;
a charge storage layer on the silicon oxide layer;
an aluminum oxide layer on the charge storage layer; and
a gate on the aluminum oxide layer,
wherein the tunnel layer is configured to allow charge to tunnel through by F-N tunneling and move into the charge storage layer during a program operation.
2. The memory device of claim 1, wherein the gate comprises a gate material with a work function of at least about 4 eV adjacent to the aluminum oxide layer.
3. The memory device of claim 2, wherein the gate material comprises at least one of titanium, titanium nitride, tantalum nitride, tantalum, tungsten, hafnium, niobium, molybdenum, ruthenium dioxide, molybdenum nitride, iridium, platinum, cobalt, chrome, ruthenium monoxide, titanium aluminum (Ti3Al), Ti2AlN, palladium, tungsten nitride (WNx), tungsten silicide (WSi), and nickel silicide.
4. The memory device of claim 2, wherein the gate further comprises a polysilicon layer that is on and extends across the gate material.
5. The memory device of claim 1, wherein the tunnel layer and the aluminum oxide layer are configured so that a larger change in charge quantity is caused by charge movement through the tunnel layer than is caused by charge movement through the aluminum oxide layer.
6. A non-volatile memory device comprising:
a tunnel layer on an active region, said tunnel layer comprising a silicon oxide layer;
a charge storage layer on the silicon oxide layer;
a blocking insulating layer on the charge storage layer, the blocking insulating layer comprising an aluminum oxide layer; and
a gate electrode on the blocking layer,
wherein the tunnel layer is configured to allow charge to tunnel through by F-N tunneling and move into the charge storage layer during a program operation.
7. The memory device of claim 6, further comprising an N-type impurity diffusion layer on the active region adjacent to the gate electrode.
8. The memory device of claim 7, wherein the charge storage layer comprises an insulating layer.
9. The memory device of claim 8, wherein the blocking insulating layer comprises at least one of silicon nitride and silicon oxynitride.
10. The memory device of claim 6, wherein the blocking insulating layer further comprising a silicon oxide layer positioned between the charge storage layer and the aluminum oxide layer.
11. The memory device of claim 10, wherein the blocking insulating layer further comprising a silicon oxide layer positioned between the gate electrode and the aluminum oxide layer.
12. The memory device of claim 6, wherein the blocking insulating layer further comprises a silicon oxide layer positioned between the gate electrode and the aluminum oxide layer.
13. The memory device of claim 6, wherein the tunnel layer and the blocking insulating layer are configured such that a larger change in charge quantity is caused by charge movement through the tunnel layer than is caused by charge movement through the blocking insulating layer.
14. The memory device of claim 6, wherein the tunnel layer is configured to allow charge to tunnel through by F-N tunneling and move into the charge storage layer.
15. A non-volatile memory device comprising:
a semiconductor substrate;
impurity doped regions in the substrate;
a tunnel layer on the semiconductor substrate, the tunnel layer comprising a silicon oxide layer;
a charge storage layer on the single silicon oxide layer;
an aluminum oxide layer on the charge storage layer; and
a gate electrode on the aluminum oxide layer,
wherein the tunnel layer is configured to allow charge to tunnel through by F-N tunneling and move into the charge storage layer during a program operation.
16. The memory device of claim 15, wherein the charge storage layer comprises an insulating layer.
17. The memory device of claim 16, wherein the insulating layer comprises at least one of silicon nitride, silicon oxynitride, silicon-rich oxide, and other ferroelectric materials.
18. The memory device of claim 15, further comprises a first oxide layer between the aluminum oxide layer and the charge storage layer.
19. The memory device of claim 18, further comprises a second oxide layer between the aluminum oxide layer and the gate electrode.
20. The memory device of claim 15, further comprises a first dielectric layer between the aluminum oxide layer and the gate electrode, the dielectric layer comprising a silicon oxide layer.
21. The memory device of claim 15, wherein the impurity doped regions, the tunnel layer, the charge storage layer, the aluminum oxide layer, and the gate form a transistor, and the tunnel layer is configured so that a larger change in charge quantity is caused by charge movement through the tunnel layer than is caused by charge movement through the aluminum oxide layer.
22. The memory device of claim 20, further comprises a second dielectric layer formed between the aluminum oxide layer and the charge storage layer, the second dielectric layer comprising a silicon oxide layer.
23. The memory device of claim 22, wherein the tunnel layer consists of said silicon oxide layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1-4. (canceled)
5. A radio remote control for issuing commands to a remotely controllable device in a wireless manner, comprising:
a transmitreceive unit;
a controller;
an acoustic or optic indicator, and
at least one antenna, wherein
the radio remote control is configured to:
execute an assignment mode before becoming operational,
decrease upon triggering the assignment mode by a user a radio range of the remote control so far that communication is only possible with a device which is immediately adjacent to the remote control, and
return to a standard radio range after an assignment has successfully been completed using the assignment mode, wherein the indicator is configured to indicate acoustically or optically a start or a completion of the assignment mode.
6. The radio remote control according to claim 5, wherein the radio range is decreased by reducing a transmission power of the radio remote control.
7. The radio remote control according to claim 5, wherein the radio range is decreased by reducing a receiving sensitivity of the transmitreceive unit.
8. The radio remote control according to claim 5, wherein the radio range is decreased by adjusting a function of the antenna.