1. A surgical retractor, comprising: (a) a ribs assembly; (b) a mechanism for transferring of linear and rotational movement adapted to apply mechanical forces and moments to said ribs assembly; and (c) a channeled disc wherein said mechanism for transferring of linear and rotational movement and said ribs assembly are mounted on said channeled disc, wherein said mechanism for transferring of linear and rotational movement includes: (i) at least one main slider, wherein said main slider has a main slider upper portion having an upper portion length, a main slider mid portion, having a mid portion length wherein said main slider mid portion is disposed on said main slider upper portion, and a main slider lower portion, having a lower portion length, wherein said main slider lower portion is disposed on said main slider mid portion, wherein said upper portion length is larger than said mid portion length, wherein said lower portion length is larger than said upper portion length, and wherein said main slider lower portions is partially mounted inside one of said channels, wherein said main slider has a first interior thread located in said main slider upper portion; (ii) at least one angular adjustment bolt wherein said angular adjustment bolt is mounted inside said first interior thread and is adapted for transferring force to one of rib force arms, wherein said main slider has a second interior thread located in said main slider mid portion; and (ii) at least one linear adjustment bolt wherein said linear adjustment bolt is mounted inside said second interior thread.
2. The surgical retractor of claim 1, wherein said channeled disc is made of material selected from a group consisting of nylon and polycarbonate.
3. The surgical retractor of claim 2, wherein said ribs assembly includes:
(i) at least two ribs, wherein each one of said ribs has a rib force arm and a rib working arm disposed on said rib force arm, wherein said rib has a rib back surface, a rib front surface, a rib top end, a rib bottom end, and a rib shoulder, wherein said rib shoulder is disposed on said force arm, wherein said rib force arm has a rib force arm length and a rib force arm width, wherein said rib force arm width tapers toward said rib top end, wherein said rib working arm has a rib working arm length and a rib working arm width, wherein said rib working arm width tapers toward said rib bottom end, and wherein said rib has a concave segment of a rib front surface said concave segment of a rib front surface having a concave segment of a rib front surface diameter.
4. The surgical retractor of claim 3, wherein said ribs are made of material containing nylon and carbon fibers.
5. The surgical retractor of claim 3, wherein said ribs are made of stainless steel.
6. The surgical retractor of claim 3, wherein at least one of said rib working arm lengths is larger than at least another one of said rib working arm length.
7. The surgical retractor of claim 3, wherein said channeled disc includes:
(i) at least two channels.
8. The surgical retractor of claim 1 wherein each of said main sliders includes:
a pair of slider arms disposed on said main slider lower portion; and
a slider pivot disposed on said pair of slider arms, wherein said main slider lower portion has a slider among arms surface and wherein there is a gap between the slider pivot and the slider among arms surface having a predetermined dimension value, and wherein said slider pivot is adapted for transferring force to said concave segment of a rib front surface.
9. The surgical retractor of claim 1, further comprising:
(d) a lighting assembly disposed on said channeled disc.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An electronic device including a display device comprising a pixel, said pixel comprising:
a first thin film transistor formed over a substrate;
a second p-channel thin film transistor formed over said substrate, each of said first thin film transistor and said second p-channel thin film transistor comprising:
a gate electrode electrically connected to an impurity region of the first thin film transistor;
a gate insulating film; and
a semiconductor film including at least a source region, a drain region, a channel region, an LDD region,
a pixel electrode;
a current supply line wherein the pixel electrode is electrically connected to the current supply line through the second p-channel thin film transistor,
wherein at least a portion of the LDD region of the second p-channel thin film transistor is overlapped with the gate electrode with the gate insulating film interposed therebetween, and
wherein a channel length of the first thin film transistor is 0.2 to 18 \u03bcm, a channel length of the second p-channel thin film transistor is 1 to 50 \u03bcm and a length of a portion of the LDD region, which is overlapped with the gate electrode is 0.1 to 3 \u03bcm.
2. The electronic device according to claim 1 wherein said electronic device is a camera.
3. The electronic device according to claim 1 wherein said electronic device is a portable information terminal.
4. The electronic device according to claim 3 wherein said portable information terminal is at Least one of a portable telephone or a sound reproduction equipment.
5. An electronic device including a display device comprising a pixel, said pixel comprising:
a p-channel thin film transistor formed over a substrate, comprising:
a gate electrode;
a gate insulating film; and
a semiconductor film including at least a source region, a drain region, a channel region, an LDD region,
a pixel electrode;
a current supply line wherein the pixel electrode is electrically connected to the current supply line through the p-channel thin film transistor,
wherein at least a portion of the LDD region of the p-channel thin film transistor is overlapped with the gate electrode with the gate insulating film interposed therebetween, and
wherein a channel length of the p-channel thin film transistor is 1 to 50 \u03bcm and a length of a portion of the LDD region, which is overlapped with the gate electrode is 0.1 to 3 \u03bcm.
6. The electronic device according to claim 5 wherein said electronic device is a camera.
7. The electronic device according to claim 5 wherein said electronic device is a portable information terminal.
8. The electronic device according to claim 7 wherein said portable information terminal is at least one of a portable telephone or a sound reproduction equipment.
9. An electronic device including a display device comprising a pixel, said pixel comprising:
a first thin film transistor formed over a substrate;
a second p-channel thin film transistor formed over said substrate, each of said first thin film transistor and said second p-channel thin film transistor comprising:
a gate electrode electrically connected to an impurity region of the first thin film transistor;
a gate insulating film; and
a semiconductor film including at least a source region, a drain region, and a channel region,
a pixel electrode; and
a current supply line wherein the pixel electrode is electrically connected to the current supply line through the second p-channel thin film transistor,
wherein a channel length of the first thin film transistor is 0.2 to 18 \u03bcm, a channel length of the second p-channel thin film transistor is 1 to 50 \u03bcm.
10. The electronic device according to claim 9 wherein said electronic device is a camera.
11. The electronic device according to claim 9 wherein said electronic device is a portable information terminal.
12. The electronic device according to claim 11 wherein said portable information terminal is at least one of a portable telephone or a sound reproduction equipment.
13. An electronic device including a display device comprising a pixel, said pixel comprising:
a first thin film transistor formed over a substrate;
a second p-channel thin film transistor formed over said substrate, each of said first thin film transistor and said second p-channel thin film transistor comprising:
a gate electrode electrically connected to an impurity region of the first thin film transistor;
a gate insulating film; and
a semiconductor film including at least a source region, a drain region, a channel region, an LDD region,
a pixel electrode;
an EL layer adjacent to the pixel electrode; and
a current supply line wherein the pixel electrode is electrically connected to the current supply line through the second p-channel thin film transistor,
wherein at least a portion of the LDD region of the second p-channel thin film transistor is overlapped with the gate electrode with the gate insulating film interposed therebetween, and
wherein a channel length of the first thin film transistor is 0.2 to 18 \u03bcm, a channel length of the second p-channel thin film transistor is 1 to 50 \u03bcm and a length of a portion of the LDD region, which is overlapped with the gate electrode is 0.1 to 3 \u03bcm.
14. The electronic device according to claim 13 wherein said electronic device is a camera.
15. The electronic device according to claim 13 wherein said electronic device is a portable information terminal.
16. The electronic device according to claim 15 wherein said portable information terminal is at least one of a portable telephone or a sound reproduction equipment.
17. The electronic device according to claim 13 wherein said EL layer is an organic EL layer.
18. The electronic device according to claim 13 wherein said EL layer is an inorganic EL layer.
19. An electronic device including a display device comprising a pixel, said pixel comprising:
a p-channel thin film transistor formed over a substrate, comprising:
a gate electrode;
a gate insulating film; and
a semiconductor film including at least a source region, a drain region, a channel region, an LDD region,
a pixel electrode;
an EL layer adjacent to the pixel electrode; and
a current supply line wherein the pixel electrode is electrically connected to the current supply line through the p-channel thin film transistor,
wherein at least a portion of the LDD region of the p-channel thin film transistor is overlapped with the gate electrode with the gate insulating film interposed therebetween, and
wherein a channel length of the p-channel thin film transistor is 1 to 50 \u03bcm and a length of a portion of the LDD region, which is overlapped with the gate electrode is 0.1 to 3 \u03bcm.
20. The electronic device according to claim 19 wherein said electronic device is a camera.
21. The electronic device according to claim 19 wherein said electionic device is a portable information terminal.
22. The electronic device according to claim 21 wherein said portable information terminal is at least one of a portable telephone or a sound reproduction equipment.
23. The electronic device according to claim 19 wherein said EL layer is an organic EL layer.
24. The electronic device according to claim 19 wherein said EL layer is an inorganic EL layer.
25. An electronic device including a display device comprising a pixel, said pixel comprising:
a first thin film transistor formed over a substrate;
a second p-channel thin film transistor formed over said substrate, each of said first thin film transistor and said second p-channel thin film transistor comprising:
a gate electrode electrically connected to an impurity region of the first thin film transistor;
a gate insulating film; and
a semiconductor film including at least a source region, a drain region, and a channel region,
a pixel electrode;
an EL layer adjacent to the pixel electrode; and
a current supply line wherein the pixel electrode is electrically connected to the current supply line through the second p-channel thin film transistor,
wherein a channel length of the first thin film transistor is 0.2 to 18 \u03bcm, a channel length of the second p-channel thin film transistor is 1 to 50 \u03bcm.
26. The electronic device according to claim 25 wherein said electronic device is a camera.
27. The electronic device according to claim 25 wherein said electronic device is a portable information terminal.
28. The electronic device according to claim 27 wherein said portable information terminal is at least one of a portable telephone or a sound reproduction equipment.
29. The electronic device according to claim 25 wherein said EL layer is an organic EL layer.
30. The electronic device according to claim 25 wherein said EL layer is an inorganic EL layer.
31. An electronic device including a display device comprising a pixel, said pixel comprising:
a first thin film transistor formed over a substrate;
a second p-channel thin film transistor formed over said substrate, each of said first thin film transistor and said second p-channel thin film transistor comprising:
a gate electrode electrically connected to an impurity region of the first thin film transistor;
a gate insulating film; and
a semiconductor film including at least a source region, a drain region, a channel region, an LDD region,
an EL element including a pixel electrode and an EL layer adjacent to the pixel electrode; and
a current supply line wherein the pixel electrode is electrically connected to the current supply line through the second p-channel thin film transistor,
wherein a channel length of the first thin film transistor is 0.2 to 18 \u03bcm, a channel length of the second p-channel thin film transistor is 1 to 50 \u03bcm and a current passing through the EL element is not larger than 2 \u03bcA.
32. The electronic device according to claim 31 wherein said p-channel thin film transistor includes an LDD region.
33. The electronic device according to claim 31 wherein said electronic device is a camera.
34. The electronic device according to claim 31 wherein said electronic device is a portable information terminal.
35. The electronic device according to claim 34 wherein said portable information terminal is at least one of a portable telephone or a sound reproduction equipment.
36. The electronic device according to claim 31 wherein said EL layer is an organic EL layer.
37. The electronic device according to claim 31 wherein said EL layer is a inorganic EL layer.