1. A method for frequency tuning an IC (integrated circuit) amplifier, comprising:
tuning a parasitic capacitance at a node of the IC amplifier using a parasitic inductance of an integrated transformer device connected to the node, at an operating frequency of the IC amplifier, wherein the integrated transformer device comprises a plurality of similarly structured 1:1 coupled-wire transformers with primary and secondary conductors stacked over a slotted ground plane, wherein the secondary conductors are serially connected.
2. The method of claim 1, wherein tuning comprises scaling a length of the primary and secondary conductors of the integrated transformer device to obtain the parasitic inductance desired for tuning the parasitic capacitance at the operating frequency of the IC amplifier.
3. The method of claim 1, wherein tuning comprises tuning a parasitic capacitance at an output node of the IC amplifier.
4. The method of claim 1, wherein tuning comprises tuning a parasitic capacitance at an input node of the IC amplifier.
5. The method of claim 1, wherein tuning comprises tuning a parasitic capacitance at an intermediate node of the IC amplifier.
6. The method of claim 1, wherein the parasitic capacitance includes a parasitic capacitance of a transistor connected to the node.
7. The method of claim 1, wherein tuning the parasitic capacitance comprises resonating the parasitic capacitance at the operating frequency.
8. The method of claim 1, wherein the operating frequency is about 30 GHZ or greater.
9. A frequency tuning circuit for an IC (integrated circuit) amplifier, the tuning circuit comprising:
a parasitic capacitance at a node of the IC amplifier; and
a parasitic inductance provided by an integrated transformer device connected to the node,
wherein the integrated transformer device comprises a plurality of similarly structured 1:1 coupled-wire transformers with primary and secondary conductors stacked over a slotted ground plane, wherein the secondary conductors are serially connected.
10. The frequency tuning circuit of claim 9, wherein the primary and secondary conductors are scalable in length to adjust the parasitic inductance.
11. The frequency tuning circuit of claim 9, wherein the node is an output node of the IC amplifier.
12. The frequency tuning circuit of claim 9, wherein the node is an input node of the IC amplifier.
13. The frequency tuning circuit of claim 9, wherein the node is an intermediate node of the IC amplifier.
14. The frequency tuning circuit of claim 9, wherein the parasitic inductance is selected to resonate the parasitic capacitance at the operating frequency of the IC amplifier.
15. The frequency tuning circuit of claim 9, wherein the parasitic capacitance includes a parasitic capacitance of a transistor connected to the node.
16. The frequency tuning circuit of claim 9, wherein operating frequency is about 30 GHZ or greater.
17. An integrated amplifier circuit, comprising:
an amplifier stage having a node with a parasitic capacitance; and
an integrated transformer device connected to the node of the amplifier stage, wherein the integrated transformer device is structured to provide a parasitic inductance for tuning the parasitic capacitance at an operating frequency of the IC amplifier,
wherein the integrated transformer device comprises a plurality of similarly structured 1:1 coupled-wire transformers with primary and secondary conductors stacked over a slotted ground plane, wherein the secondary conductors are serially connected.
18. The integrated amplifier circuit of claim 17, wherein the amplifier stage is an output stage of the amplifier.
19. The integrated amplifier circuit of claim 17, wherein the amplifier stage in an input stage of the amplifier.
20. The integrated amplifier circuit of claim 17, wherein the amplifier stage in an intermediate stage of the amplifier.
21. The integrated amplifier circuit of claim 17, wherein the primary and secondary conductors are scalable in length to adjust the parasitic inductance of the integrated transformer device.
22. The integrated amplifier circuit of claim 17, wherein the parasitic inductance is selected to resonate the parasitic capacitance at the operating frequency of the IC amplifier.
23. The integrated amplifier circuit of claim 17, wherein the parasitic capacitance includes a parasitic capacitance of a transistor connected to the node.
24. The integrated amplifier circuit of claim 17, wherein the operating frequency is about 30 GHZ or greater.
25. The integrated amplifier circuit of claim 17, wherein the amplifier stage is a differential amplifier stage having differential output terminals, wherein the integrated transformer device comprises a primary conductor connected between the differential output terminals.
26. The integrated amplifier circuit of claim 25, further comprising a supply voltage feed connected to the primary conductor of the integrated transformer device.
27. The integrated amplifier circuit of claim 17, further comprising an impedance matching network connected to an output of the integrated transformer device.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A contact member that electrically connects a first board and a second board, comprising:
a joining part configured to be joined to the first board;
a contacting part configured to come into contact with the second board;
a first bent portion and a second bent portion provided between the joining part and the contacting part;
a first contact part configured to come into contact with the second bent portion when the first bent portion is caused to bend by pressing of the contacting part by the second board;
a second contact part configured to come into contact with the first bent portion when the second bent portion is caused to bend by the pressing of the contacting part by the second board after the first contact part comes into contact with the second bent portion; and
a third contact part configured to come into contact with the first board by the pressing of the contacting part by the second board after the second contact part comes into contact with the first bent portion.
2. The contact member as claimed in claim 1, further comprising:
a horizontal part extending from the contacting part in a direction away from the second bent portion; and
an attracted part provided on a first surface of the horizontal part.
3. The contact member as claimed in claim 2, wherein the second contact part is provided on a second surface of the horizontal part opposite to the first surface.
4. The contact member as claimed in claim 2, further comprising:
a stopper part bent from the horizontal part,
wherein the third contact part is provided at an end of the stopper part.
5. The contact member as claimed in claim 4, further comprising:
a guide part bent from the joining part and configured to guide movements of the stopper part in a direction toward and a direction away from the first board.
6. The contact member as claimed in claim 2, wherein the contacting part is shaped to project from the horizontal part.