1. A whole-body form contouring lingerie which can be worn as an outer garment or inner garment for whole body contouring without excessive compression of body parts having elastic and inelastic members and comprising a left and a right laterally disposed elastic members, a front medially disposed nonelastic member and a rear medially disposed nonelastic member, said front and rear medially disposed non-elastic members connected to each other by the left and right laterally disposed elastic members, wherein the elastic members have a different color from the nonelastic members and wherein the elastic members and the nonelastic members form a one piece shape forming inner or outer garment.
2. The whole body form contouring lingerie of claim 1, wherein the left and right laterally disposed members are inelastic and the front and rear medially disposed members are elastic.
3. The whole body form contouring lingerie according to claim 1, comprising a neck encircling portion which encircles the neck, a shoulder encircling portion which encircles the shoulders, a breast encircling portion which encircles the breasts, a stomach encircling portion which encircles the stomach, a hip encircling portion which encircles the hips, a leg encircling portion which encircles the legs, and optional hand encircling portions which encircles the hands of the wearer.
4. The whole body form contouring lingerie according to claim 3, wherein the portions each comprise laterally and medially disposed elastic and nonelastic members having contrasting colors and wherein these members are formed integrally and continuously from a single cut of cloth having the same elasticity or inelasticity.
5. The whole body form contouring lingerie according to claim 3, wherein the portions each comprise laterally and medially disposed elastic and nonelastic members having contrasting colors and wherein these members are integrally sewn together from different pieces of cloth of the same color for the lateral and medial members having different elasticities.
6. The whole body form contouring lingerie according to claim 1, wherein the laterally disposed members have colors akin to human skin colors and are made of materials that mimick human skin in color and texture.
7. The whole body form contouring lingerie according to claim 1, wherein the medially disposed members have a lighter shade of color from the laterally disposed members.
8. The whole body form contouring lingerie according to claim 1, wherein the medially disposed members is a translucent material having a lighter shade of color from the laterally disposed members.
9. The whole body form contouring lingerie according to claim 3, wherein the breast encircling portion is provided insewn or integral breast cups.
10. The whole body form contouring lingerie according to claim 3, wherein the hip encircling portion is provided with an insewn or integral crotch covers.
11. The whole body form contouring lingerie according to claim 3, wherein variable tension and shape enhancements are sewn into the different portions for additional body contouring.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for fabricating a nonvolatile memory device, the method comprising:
repeatedly stacking a stacked structure over a substrate to form a multi-stacked structure, wherein the stacked structure includes a conductive layer and an insulation layer;
forming a photoresist pattern over the multi-stacked structure;
first-etching an uppermost stacked structure of the multi-stacked structure using the photoresist pattern as an etch barrier;
second-etching a resultant structure formed by the first-etching through the use of a breakthrough etching;
slimming the photoresist pattern to form a slimmed photoresist pattern; and
third-etching the uppermost stacked structure using the slimmed photoresist pattern as an etch barrier and, at the same time, etching a stacked structure disposed under the uppermost stacked structure and exposed by the first-etching.
2. The method of claim 1, wherein the multi-stacked structure is formed to have a step shape by the first-etching, the second-etching, the slimming, and the third-etching.
3. The method of claim 2, wherein the second-etching, the slimming, and the third-etching are performed as one unit cycle, which is repeated until the substrate is exposed.
4. The method of claim 1, wherein the first-etching and the third-etching comprises:
etching the insulation layer; and
etching the conductive layer.
5. The method of claim 4, wherein the insulation layer comprises an oxide layer.
6. The method of claim 4, wherein the conductive layer comprises polysilicon.
7. The method of claim 5, wherein the etching of the insulation layer uses a single or mixed gas including one or more selected from the group consisting of CF4, CHF3 and CH2F2 as an etch gas, and uses a He gas or an Ar gas as an insert gas.
8. The method of claim 6, wherein the etching of the conductive layer uses a single gas selected from the group consisting of HBr, Cl2 and O2, or a mixed gas of HBr and Cl2 as an etch gas.
9. The method of claim 6, wherein the breakthrough etching uses a CF4 gas or an O2 gas.
10. The method of claim 9, wherein the CF4 gas is supplied at a flow rate of approximately 30 sccm to approximately 150 sccm, and the O2 gas is provided at a flow rate of approximately 5 sccm to approximately 200 sccm.
11. The method of claim 1, wherein the breakthrough etching is performed using a bias power in a range of approximately 0 V to approximately 50 V.
12. The method of claim 1, wherein the slimming of the photoresist pattern is performed at a pressure of approximately 20 mTorr to approximately 100 mTorr and with a source power of approximately 1,000 W to approximately 1,800 W.
13. The method of claim 1, wherein the slimming of the photoresist pattern is performed using a mixed gas of He and O2, or a mixed gas of He, O2 and N2.
14. The method of claim 13, wherein the slimming of the photoresist pattern is performed by inserting a CF4 gas to the mixed gas.
15. The method of claim 14, wherein the CF4 gas is supplied at a flow rate that is in a range of approximately 3% to approximately 10% of a flow rate of the mixed gas.
16. A method for fabricating a nonvolatile memory device, the method comprising:
repeatedly stacking a stacked structure over a substrate to form a multi-stacked structure, wherein the stacked structure includes a conductive layer and an insulation layer;
forming a photoresist pattern over the multi-stacked structure;
first-etching an uppermost stacked structure of the multi-stacked structure using the photoresist pattern as an etch barrier;
second-etching a resultant structure formed by the first-etching through the use of a breakthrough etching;
forming a polymer layer over the photoresist pattern;
slimming the photoresist pattern on which the polymer layer is formed; and
third-etching the uppermost stacked structure using the slimed photoresist pattern as an etch barrier and, at the same time, etching a stacked structure disposed under the uppermost stacked structure and exposed by the first-etching.
17. The method of claim 16, wherein the multi-stacked structure is formed to have a step shape by the first-etching, the second-etching, the forming of the polymer layer, the slimming, and the third-etching, wherein the second-etching, the forming of the polymer layer, the slimming, and the third-etching are performed as one unit cycle, which is repeated until the substrate is exposed.
18. The method of claim 16, wherein the forming of the polymer layer uses a CH series gas.
19. The method of claim 18, wherein the CH series gas comprises one selected from the group consisting of CH4, CH2F2, C2H2, and C2H4.
20. The method of claim 16, wherein the forming of the polymer layer is performed by supplying a bias power in a range of approximately 200 W to approximately 400 W without supplying a source power.