1. A perylene tetracarboxylic acid bisimide derivative being a compound represented by the following chemical formula (I) other than a compound represented by the following chemical formula (A); a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; or a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer,
where in the chemical formula (I),
R1 to R6 each represents a hydrogen atom, a monovalent substituent derived from organooligosiloxane, or any substituent and may be identical to or different from one another, where at least one of R1 to R6 represents a monovalent substituent derived from organooligosiloxane, the organooligosiloxane may or may not further have a substituent, and the monovalent substituent derived from organooligosiloxane does not have a circular structure and an amino group,
R7 to R10 each represents a lower alkyl group, a lower alkoxy group, or a halogen and may be identical to or different from one another,
L1 and L2 each represents a single bond or a linking group and may be identical to or different from each other, and
o, p, q, and r each represents the number of substituents, which is an integer from 0 to 2 and may be identical to or different from one another, where when o is 2, two R8s may be identical to or different from each other, when p is 2, two R8s may be identical to or different from each other, and when q is 2, two R9s may be identical to or different from each other, and when r is 2, two R10s may be identical to or different from each other,
where in the chemical formula (A),
RA is a group represented by the following chemical formula (A1)
where in the chemical formula (A1),
mA is an integer from 0 to 10.
2. The perylene tetracarboxylic acid bisimide derivative according to claim 1, where in the chemical formula (I),
in R1 to R6, the monovalent substituent derived from organooligosiloxane is a substituent represented by the following chemical formula (II) or (II-2),
where in the chemical formulae (II) and (II-2),
R11s and R12s each represents a hydrogen atom, a lower alkyl group, or a fluorine atom and may be identical to or different from one another, R11s may be identical to or different from one another, and R12s may be identical to or different from one another,
m represents 0 or a positive integer, and when a plurality of ms is present in the chemical formula (I), ms may be identical to or different from one another,
n represents 0 or a positive integer, and when a plurality of ns is present in the chemical formula (I), ns may be identical to or different from one another, represents 0 or 1,
t represents 1 or 2, and
* represents an atomic bonding to a carbon atom in the chemical formula (I);
a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; or
a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.
3. The perylene tetracarboxylic acid bisimide derivative according to claim 2, where in the chemical formula (II),
m represents an integer from 0 to 20, and
n represents an integer from 0 to 30;
a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; or
a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.
4. The perylene tetracarboxylic acid bisimide derivative according to claim 1, where in the chemical formula (I),
in L1 and L2,
the linking group is an alkylene group, a saturated hydrocarbon group having a circular structure, an unsaturated hydrocarbon group, an oxy group (\u2014O\u2014), a thio group (\u2014S\u2014), a seleno group (\u2014Se\u2014), an amide bond (\u2014NH\u2014CO\u2014 or \u2014CO\u2014NH\u2014), an ester bond (\u2014CO\u2014O\u2014 or \u2014O\u2014CO\u2014), an imino group (\u2014NH\u2014), or a thioester bond (\u2014CO\u2014S\u2014 or \u2014S\u2014CO\u2014), where
the alkylene group, the saturated hydrocarbon group having a circular structure, and the unsaturated hydrocarbon group each may or may not further have a substituent, and
when the alkylene group, the saturated hydrocarbon group having a circular structure, and the unsaturated hydrocarbon group each have a methylene group, the methylene group may be replaced with an oxy group (\u2014O\u2014), a thio group (\u2014S\u2014), a seleno group (\u2014Se\u2014), an amide bond (\u2014NH\u2014CO\u2014 or \u2014CO\u2014NH\u2014), an ester bond (\u2014CO\u2014O\u2014 or \u2014O\u2014CO\u2014), an imino group (\u2014NH\u2014), or a thioester bond (\u2014CO\u2014S\u2014 or \u2014S\u2014CO\u2014) or is a group represented by the following formula (III),
*C-L11-Ar-L12-*N\u2003\u2003(III)
where in the formula (III),
Ar represents an arylene group, and when a plurality of Ars is present in the chemical formula (I), Ars may be identical to or different from one another, and
L11 and L12 are each a single bond, an alkylene group, a saturated hydrocarbon group having a circular structure, an unsaturated hydrocarbon group, an oxy group (\u2014O\u2014), a thio group (\u2014S\u2014), a seleno group (\u2014Se\u2014), an amide bond (\u2014NH\u2014CO\u2014 or \u2014CO\u2014NH\u2014), an ester bond (\u2014CO\u2014O\u2014 or \u2014O\u2014CO\u2014), an imino group (\u2014NH\u2014), or a thioester bond (\u2014CO\u2014S\u2014 or \u2014S\u2014CO\u2014),
the alkylene group, the saturated hydrocarbon group having a circular structure, or the unsaturated hydrocarbon group each may or may not further have a substituent,
when the alkylene group, the saturated hydrocarbon group having a circular structure, and the unsaturated hydrocarbon group each have a methylene group, the methylene group may be replaced with an oxy group (\u2014O\u2014), a thio group (\u2014S\u2014), a seleno group (\u2014Se\u2014), an amide bond (\u2014NH\u2014CO\u2014 or \u2014CO\u2014NH\u2014), an ester bond (\u2014CO\u2014O\u2014 or \u2014O\u2014CO\u2014), an imino group (\u2014NH\u2014), or a thioester bond (\u2014CO\u2014S\u2014 or \u2014S\u2014CO\u2014),
L11 and L12 may be identical to or different from each other,
when a plurality of L11s is present in the chemical formula (I), L11s may be identical to or different from one another,
when a plurality of L12s is present in the chemical formula (I), L12s may be identical to or different from one another,
*C represents an atomic bonding to a carbon atom in the chemical formula (I), and
*N represents an atomic bonding to a nitrogen atom in the chemical formula (I);
a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; or
a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.
5. The perylene tetracarboxylic acid bisimide derivative according to claim 4, where in the chemical formula (III),
Ar is an o-phenylene group, a m-phenylene group, a p-phenylene group, a 2,2\u2032-biphenylene group, a 2,3\u2032-biphenylene group, a 2,4\u2032-biphenylene group, a 3,3\u2032-biphenylene group, a 3,4\u2032-biphenylene group, a 4,4\u2032-biphenylene group, or a 2,5-thienylene group;
a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; or
a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.
6. The perylene tetracarboxylic acid bisimide derivative according to claim 4, where in the chemical formula (III),
in L1 and L2, the linking group is a single bond, an alkylene group, an oxy group (\u2014O\u2014), a thio group (\u2014S\u2014), or a seleno group (\u2014Se\u2014);
a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; or
a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.
7. The perylene tetracarboxylic acid bisimide derivative according to claim 2, represented by the following chemical formula (1) or (2),
where in the chemical formulae (1) and (2),
m and n are the same as those in the chemical formula (II);
a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; or
a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.
8. The perylene tetracarboxylic acid bisimide derivative according to claim 7, represented by the following chemical formula (1-1), (2-1), (2-44), or (2-46),
a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; or
a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.
9. The perylene tetracarboxylic acid bisimide derivative according to claim 2, represented by the following chemical formula (3),
where in the chemical formula (3),
m and n are the same as those in the chemical formula (II);
a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; or
a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.
10. The perylene tetracarboxylic acid bisimide derivative according to claim 2, represented by the following chemical formula (4),
where in the chemical formula (4),
m and n are the same as those in the chemical formula (II);
a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; or
a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.
11. The perylene tetracarboxylic acid bisimide derivative according to claim 10, represented by the following chemical formula (4-1),
a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; or
a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.
12. The perylene tetracarboxylic acid bisimide derivative according to claim 2, represented by the following chemical formula (5),
where in the chemical formula (5),
m and n are the same as those in the chemical formula (II);
a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; or
a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.
13. The perylene tetracarboxylic acid bisimide derivative according to claim 12, represented by the following chemical formula (5-1),
a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; or
a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.
14. The perylene tetracarboxylic acid bisimide derivative according to claim 1, which is in a form of a liquid crystalline compound;
a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; or
a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.
15. An n-type semiconductor comprising the perylene tetracarboxylic acid bisimide derivative according to claim 1, a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative, or a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.
16. The n-type semiconductor according to claim 15, which is a laser pigment or a photoconductor.
17. A method for producing an n-type semiconductor comprising the perylene tetracarboxylic acid bisimide derivative according to claim 1, a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative, or a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer, comprising:
a solution preparation step of dissolving the perylene tetracarboxylic acid bisimide derivative according to claim 1, a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative, or a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer in a solvent to prepare a solution;
a coating step of coating a base with the solution to form a coating film; and
a drying step of drying the coating film.
18. An electronic device comprising the n-type semiconductor according to claim 15.
19. The electronic device according to claim 18, which is a battery, a solar battery, a laser, an organic EL device, an electroluminescence element, a transistor, or a memory element.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A electronically erasable read only memory, comprising:
a capacitor comprising:
a diffusion layer of a first conductivity type formed in a well of a second conductivity type;
an insulating layer overlying the diffusion layer; and
a floating gate overlying the diffusion layer; and
a MOS transistor comprising:
first and second active regions formed in the well, adjacent to an extended portion of the floating gate.
2. The electronically erasable read only memory of claim 1 wherein the first conductivity type is a p type and the second conductivity type is an n type.
3. The electronically erasable read only memory of claim 1 wherein the first conductivity type is an n type and the second conductivity type is a p type.
4. The electronically erasable read only memory of claim 1 and further comprising a second diffusion layer beneath one of the first and second active regions.
5. The electronically erasable read only memory of claim 4 wherein the first active regions comprises a source, the second active region comprises a drain, and the extended portion the floating gate comprises a gate of a MOS transistor, and the second diffusion layer is formed beneath the second active region.
6. A method of forming an electronically erasable read only memory, comprising the steps of:
forming a diffusion layer of a first conductivity type formed in a well of a second conductivity type;
forming an insulating layer overlying the diffusion layer; and
forming a floating gate overlying the diffusion layer; and
forming first and second active regions formed in the well, adjacent to an extended portion of the floating gate.
7. The method of claim 6 wherein the step of forming a diffusion layer comprises the step of forming a diffusion layer of a p conductivity type in a well of an n conductivity type.
8. The method of claim 6 wherein the step of forming a diffusion layer comprises the step of forming a diffusion layer of an n conductivity type in a well of a p conductivity type.
9. The method of claim 6 and further comprising the step of forming a second diffusion layer beneath one of the first and second active regions.
10. The method of claim 9 wherein the first active region comprises a source, the second active region comprises a drain, and the extended portion the floating gate comprises a gate of a MOS transistor, and wherein the step of forming a second diffusion layer comprises the step of forming the second diffusion layer beneath the second active region.