1. Power transmission cable comprising:
at least one power conductor;
an insulating layer surrounding said conductor to form at least one insulated conductor;
a flame-retardant halogen free protective sheath provided in a radially external position with respect to said insulated conductor;
wherein:
said sheath has an inner and an outer layer in contact one another,
said inner layer has a thickness at least equal to a thickness of said outer layer,
the inner layer comprises a polymer material having a glass transition temperature equal to or lower than \u221230\xb0 C.; and
the outer layer comprises a mud resistant polymer material.
2. Power transmission cable according to claim 1 wherein said inner has a thickness of at least 1.5 times the thickness of the outer layer.
3. Power transmission cable according to claim 2 wherein, said inner has a thickness 2 times the thickness of the outer layer.
4. Power transmission cable according to claim 1 wherein said inner layer has a thickness of from of from 1.0 mm to 10.0 mm.
5. Power transmission cable according to claim 1 wherein the polymer material of the inner layer is selected from:
a) an alkylenevinyl acetate copolymer or a mixture of alkylenevinyl acetate copolymers having an average content of vinyl acetate comonomer of from 20 to 50% by weight with respect to the weight of the copolymer;
b) an alkylenealkyl acrylate copolymer or a mixture of alkylenealkyl acrylate copolymers having an average content of alkyl acrylate comonomer equal to or lower than 40% by weight with respect to the weight of the copolymer.
6. Power transmission cable according to claim 5 wherein the alkylene of copolymer a) or of copolymer b) is an ethylene comonomer.
7. Power transmission cable according to claim 5 wherein the content of vinyl acetate comonomer in the copolymer a) is of from 25% to 45% by weight with respect to the weight of the copolymer.
8. Power transmission cable according to claim 5 wherein the alkyl acrylate of copolymer b) is selected from methyl acrylate and butyl acrylate.
9. Power transmission cable according to claim 5 wherein the content of alkyl acrylate comonomer in the copolymer b) is equal to or higher than 20% by weight with respect to the weight of the copolymer.
10. Power transmission cable according to claim 1 wherein the polymer material of the inner layer comprises from 40% to 70% by weight with respect to the weight of the polymer material of a flame-retardant filler.
11. Power transmission cable according to claim 10 wherein the flame-retardant filler is selected from inorganic oxides and hydroxides or mixture thereof.
12. Power transmission cable according to claim 11 wherein the flame-retardant filler is selected from magnesium hydroxide, aluminium hydroxide and the mixtures thereof.
13. Power transmission cable according to claim 1 wherein said outer layer has a thickness of from 0.5 mm. to 5.0 mm.
14. Power transmission cable according to claim 1 wherein the polymer material of the outer layer is an alkylenealkyl acrylate copolymer or a mixture of alkylenealkyl acrylate copolymers having an average content of alkyl acrylate comonomer equal to or higher than 40% by weight with respect to the weight of the copolymers.
15. Power transmission cable according to claim 14 wherein the average content of alkyl acrylate comonomer is equal to or higher than 50% by weight with respect to the weight of the copolymers.
16. Power transmission cable according to claim 14 wherein the alkylene is an ethylene comonomer.
17. Power transmission cable according to claim 14 wherein the alkyl acrylate comonomer is selected from methyl acrylate and butyl acrylate.
18. Power transmission cable according to claim 1 wherein the polymer material of the outer layer has a Tg equal to or lower than \u221220\xb0 C.
19. Power transmission cable according to claim 1 having a tape provided in a radially internal position with respect to the sheath.
20. Power transmission cable according to claim 19 wherein said tape is made of a material selected from polyamide and polyester.
21. Power transmission cable according to claim 19 wherein said tape is in form of textile material.
22. Power transmission cable according to claim 21 wherein, said textile material is embedded in a polymeric matrix.
23. Power transmission cable according to claim 22 wherein the polymeric matrix is based on a polymer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An intermediate state of a semiconductor device comprising:
a gate dielectric disposed over a workpiece;
a layer of conductive material comprising a thickness of about 30A\xb0 or less disposed over and in contact with the gate dielectric, the layer of conductive material comprising metal nitride;
a layer of semiconductive material disposed over and in contact with the 30A\xb0 thick layer of conductive material, the layer of semiconductive material and the layer of conductive material patterned to define a plurality of gate electrodes;
a p-type dopant implanted in the layer of semiconductor material of a portion of said plurality of gate electrodes to form p-channel semiconductor devices;
an n-type dopant implanted in the layer of semiconductor material of another portion of said plurality of gate electrodes to form n-channel semiconductor devices; and
a source region and a drain region formed in the workpiece proximate the gate dielectric.
2. The semiconductor device according to claim 1, wherein the layer of conductive material comprises a thickness such that the layer of conductive material has a substantially negligible effect on a work function of the transistor.
3. The semiconductor device according to claim 1, wherein the gate dielectric comprises a dielectric constant of about 3.9 to about 7.8.
4. The semiconductor device according to claim 1, wherein the gate dielectric comprises an insulating material comprising Si combined with O, N, or both O and N.
5. The semiconductor device according to claim 1, wherein the gate dielectic comprises a dielectric constant of about 4.0 or greater, and wherein the gate dielectric comprises HfO2, HfSiOx, Al2O3, ZrO2, ZrSiOx, Ta2O5, La2O3, SiO2, TiO2, CeO2, Bi4Si2O12, WO3, Y2O3, LaAlO3, BST (Ba(a-x)SrxTiO3), PST (PbScxTa(1-a)O3), nitrides thereof, SixNy, SiON, HfAlOx, HfAlOxN1-x-y, ZrAlOx, ZrAlOxNy, SiAlOx, SiAlOxN1-x-y, HfSiAlOx, HfSiAlOxNy, ZrSiAlOx, ZrSiAlOxNy, PZN (PbZnxNb(1-x)O3), PZT (PbZrxTi(1-x)O3), PMN (PbMgxNb(1-x)O3), combinations thereof, or multiple layers thereof.
6. The semiconductor device according to claim 1, wherein the semiconductor device comprises parts of CMOS devices.
7. The semiconductor device according to claim 6, wherein the CMOS devices comprise semiconductor devices with symmetric threshold voltages.
8. The semiconductor device according to claim 1, wherein the metal nitride is MoN.