1. A scroll compressor comprising:
a compressor mechanism including a first scroll having an end plate and a spiral wrap formed thereon and a second scroll having an end plate and a spiral wrap formed thereon and engaging with the first scroll;
a support for supporting the second scroll;
a seal arranged between the support and the second scroll; and
a position adjustment device for changing a position of the second scroll along an axial direction of the compressor mechanism,
the seal hermetically contacting the end plate of the second scroll such that a back pressure space for bringing the first scroll and the second scroll into contact with each other is defined inside the seal with the first and second scrolls being engaged, and
the position adjustment is device being configured to change a position of the seal between a sealing position at which the seal hermetically contacts the end plate of the second scroll and a leakage position at which the seal is separated from the end plate of the second scroll.
2. A scroll compressor comprising:
a compressor mechanism including a first scroll having an end plate and a spiral wrap formed thereon and a second scroll having an end plate and a spiral wrap formed thereon for engaging with the first scroll;
a support for supporting the first scroll;
a seal arranged between the support and the first scroll; and
a position adjustment device for changing a position of the first scroll along an axial direction of the compressor mechanism,
the seal hermetically contacting the end plate of the first scroll such that a back pressure space for bringing the first scroll and the second scroll into contact with each other is defined inside the seal with the first and second scrolls being engaged, and
the position adjustment device being configured to change a position of the seal between a sealing position at which the seal hermetically contacts the end plate of the first scroll and a leakage position at which the seal is separated from the end plate of the first scroll.
3. The scroll compressor of claim 1, wherein
the first scroll is a stationary scroll prohibited from revolving, and
the second scroll is a moving scroll capable of moving with respect to the first scroll.
4. The scroll compressor of claim 1, wherein
the end plate of the first scroll or the second scroll is provided with a back pressure introduction path for making the back pressure space communicate with a portion of a compressor chamber defined between the first scroll and the second scroll, the portion being more inside than a periphery of the compressor chamber.
5. The scroll compressor of claim 1, wherein
the support includes a support recess for supporting the seal such that the seal moves toward or away from the support, and
the position adjustment device includes a high pressure communication path for making a rear end part of the support recess communicate with a high pressure region, a low pressure communication path for making the rear end part of the support recess communicate with a low pressure region and a switching mechanism for switching the communication between the support recess and the low pressure communication path.
6. The scroll compressor of claim 5, wherein
the high pressure communication path has a restrictor, and
the low pressure communication path has an on-off valve as the switching mechanism.
7. The scroll compressor of claim 2, wherein
the first scroll is a stationary scroll prohibited from revolving, and
the second scroll is a moving scroll capable of moving with respect to the first scroll.
8. The scroll compressor of claim 2, wherein
the end plate of the first scroll or the second scroll is provided with a back pressure introduction path for making the back pressure space communicate with a portion of a compressor chamber defined between the first scroll and the second scroll, the portion being more inside than a periphery of the compressor chamber.
9. The scroll compressor of claim 2, wherein
the support includes a support recess for supporting the seal such that the seal moves toward or away from the support, and
the position adjustment device includes a high pressure communication path for making a rear end part of the support recess communicate with a high pressure region, a low pressure communication path for making the rear end part of the support recess communicate with a low pressure region and a switching mechanism for switching the communication between the support recess and the low pressure communication path.
10. The scroll compressor of claim 9, wherein
the high pressure communication path has a restrictor, and
the low pressure communication path has an on-off valve as the switching mechanism.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A device comprising:
a groove formed in a semiconductor substrate;
a gate dielectric film formed over and contacting a bottom surface of the groove;
a gate electrode formed in the groove over the gate dielectric film;
sourcedrain regions disposed adjacent the sides of the gate electrode; and
spacers interposed between the gate electrode and the sourcedrain regions,
wherein the uppermost surface of the sourcedrain regions, the uppermost surface of the gate electrode and the uppermost surface of the spacers are formed on the same plane.
2. The device of claim 1, further comprising LDD regions formed under and contacting the sourcedrain regions and contacting the sidewall of the spacers and a bottom surface of the spacers.
3. The device of claim 1, wherein the gate electrode is composed of a poly silicon layer.
4. The device of claim 1, wherein the gate electrode is composed of a metal layer.
5. The device of claim 1, wherein a depth of the spacer is the same as a depth of the sourcedrain region.
6. A device comprising:
a first groove formed in a semiconductor substrate;
a gate dielectric film formed over and contacting a the sidewalls and the bottom surface of the first groove;
a gate electrode formed in the first groove over the gate dielectric film, the gate electrode including an upper gate electrode portion projecting from the first groove and a lower gate electrode portion formed in the first groove;
second grooves formed in the semiconductor substrate;
spacers formed in a respective one of the second grooves and contacting sidewalls of the gate dielectric film;
sourcedrain regions formed in the semiconductor substrate and contacting a sidewall of the spacers.
7. The device of claim 6, wherein the second grooves are formed at the same depth as the first groove.
8. The device of claim 6, wherein the width of the upper gate electrode portion is greater than the width of the lower gate electrode portion.
9. The device of claim 6, wherein a depth of the spacer is the same as a depth of the sourcedrain regions.
10. The device of claim 6, wherein the gate electrode is composed of a poly silicon layer.
11. The device of claim 6, wherein the gate electrode is composed of a metal layer.
12. The device of claim 6, further comprising LDD regions formed under and contacting the bottom surface of sourcedrain regions and the spacers, respectively.
13. The device of claim 12, wherein the depth of the LDD regions is greater than the depth of the sourcedrain regions and the spacers.
14. A method comprising:
forming a groove in a semiconductor device; and then
forming spacers in the groove; and then
forming a gate dielectric film over a bottom surface of the groove; and then
forming a gate electrode in the groove between the spacers and over the gate dielectric film; and then
forming LDD regions in the semiconductor device contacting sidewalls and a bottom surface of the spacer; and then
forming sourcedrain regions in the semiconductor device contacting sidewalls of the spacers and over the LDD regions.
15. The method of claim 14, wherein forming of the LDD regions comprises:
implanting impurities in a region of the semiconductor substrate; and then
performing an annealing process on the region of the semiconductor substrate where the impurities are implanted.
16. The method of claim 14, wherein forming the gate electrode comprises:
forming a gate electrode material over the semiconductor substrate and in the groove; and then
removing a portion of the gate electrode material formed over the semiconductor substrate.
17. The method of claim 14, wherein the gate electrode is composed of a poly silicon layer.
18. The method of claim 14, wherein the gate electrode is composed of a metal layer.
19. The method of claim 14, wherein a depth of the spacers is the same as a depth of the sourcedrain regions.
20. The method of claim 14, wherein the uppermost surface of the sourcedrain regions, the uppermost surface of the gate electrode and the uppermost surface of the spacers are formed on the same plane.