1. A method for fabricating a thin film pattern, comprising:
forming sequentially a first film and a second film on a substrate;
applying a layer of photoresist on the second film;
exposing and developing the photoresist layer with a double tone mask to form a photoresist pattern comprising a totally left region, a partially left region and a totally removed region;
performing a first wet etching on the second film in the totally removed region;
performing a first dry etching on the first film in the totally removed region to form a first pattern, and etching the photoresist layer to remove the photoresist in the partially left region and reduce the photoresist of the totally left region in thickness so as to expose the second film in the partially left region;
performing a second wet etching on the second film in the partially left region;
performing a second dry etching for etching entire or a part of the first film in the partially left region to form a second pattern; and
removing the residual photoresist.
2. The method according to claim 1, wherein the first film comprises a semiconductor material and the second film comprises a metal material.
3. The method according to claim 1, wherein SF6, O2, He and CF4 as well as Cl2 or HCl are used as reactive gases to perform the first dry etching.
4. The method according to claim 3, wherein the volume flow rate of SF6 is 30 to 500 sccm, the volume flow rate of O2 is 500 to 3000 sccm, the volume flow rate of He is 100 to 1000 sccm, the volume flow rate of CF4 is 40 to 500 sccm, and the volume flow rate of Cl2 or HCl is 100 to 2000 sccm; and
the reactive conditions of the first dry etching comprise a vacuum degree of 50 to 1000 mTorr, a RF power is 500 W to 7000 W, and a temperature of 23\xb0 C. to 150\xb0 C.
5. The method according to claim 1, wherein the totally left region has an area beyond that of the first pattern to be formed, so that the time of etching the photoresist is equal to the time of the first dry etching on the first film when the first dry etching is performed.
6. A method for fabricating an array substrate, comprising forming patterns of data lines, active layers, source electrodes and drain electrodes, comprising:
forming sequentially an active layer film and a data line metal film on a substrate;
applying a layer of photoresist on the data line metal film;
exposing and developing the photoresist layer with a double tone mask to form a photoresist pattern comprising a totally left region, a partially left region and a totally removed region;
performing a first wet etching on the data line metal film in the totally removed region;
performing a first dry etching on the active layer film in the totally removed region to form the patterns of data lines, source electrodes, drain electrodes and active layers, and etching the photoresist layer to remove the photoresist in the partially left region and reduce the photoresist of the totally left region in thickness, so as to expose the data line metal film in the partially left region;
performing a second wet etching on the data line metal film in the partially left region;
performing a second dry etching for etching entire or a part of the active layer film in the partially left region to form a channel pattern on the active layer; and
removing the residual photoresist.
7. The method for fabricating an array substrate according to claim 6, wherein SF6, O2, He and CF4 as well as Cl2 or HCl are used as reactive gases to perform the first dry etching.
8. The method for fabricating an array substrate according to claim 7, wherein the volume flow rate of SF6 is 30 to 500 sccm, the volume flow rate of O2 is 500 to 3000 sccm, the volume flow rate of He is 100 to 1000 sccm, the volume flow rate of CF4 is 40 to 500 sccm, and the volume flow rate of Cl2 or HCl is 100 to 2000 sccm; and
the reactive conditions of the first dry etching comprise a vacuum degree of 50 to 1000 mTorr, a RF power is 500 W to 7000 W, and a temperature of 23\xb0 C. to 150\xb0 C.
9. The method for fabricating an array substrate according to claim 8, wherein the data line metal film is made of Aluminum (Al), Al alloy, Molybdenum (Mo), MoAl, MoAlNd, MoAl or Al alloyMo, Copper (Cu), Titanium (Ti), TiAl(AlNd)Ti, CuMo or Mo alloy.
10. The method for fabricating an array substrate according to claim 9, wherein the data line metal film is made of Al or Al alloy or Nd.
11. The method for fabricating an array substrate according to claim 8, wherein the active layer film comprises laminated layers a semiconductor film and an impurity-doped semiconductor film.
12. The method for fabricating an array substrate according to claim 6, wherein
the totally left region has an area beyond that of the patterns of the data lines, the source electrodes and the source electrodes to be formed, so that the time of etching the photoresist is equal to the time of the first dry etching on the active layer film when the first dry etching is performed.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A camera module comprising: a first case and a second case both made from a synthetic resin, the first case and the second case being joined together in a water tight manner to form a housing part,
the housing part including a lens unit having an objective lens at a top thereof, an imaging element, and a printed wiring board, which are accommodated therein, the first case having an upper face in which an opening is formed for exposing the objective lens, wherein
joint surfaces of the first case and the second case where both are joined together in a direction having a component in an optical axis direction of the lens unit are inclined relative to a plane orthogonal to the optical axis direction of the lens unit.
2. The camera module according to claim 1, wherein the joint surfaces between the first case and the second case are joined together by ultrasonic welding.
3. The camera module according to claim 1, wherein any of the first case and the second case has an opening for external connection, and
the camera module further comprises external connection means that is held in a water tight manner relative to a peripheral part of the opening for external connection, the external connection means for connection with an external circuit.
4. The camera module according to claim 2, wherein: the second case has an opening for external connection;
the camera module further comprises external connection means that is held in a water tight manner relative to a peripheral part of the opening for external connection, the external connection means for connection with an external circuit; and
the external connection means is protruded from an area defined by an extension of a side wall of the first case.