1. A transparent laminate,
wherein a region where a transparent substrate, a first transparent film which has a refractive index of 1.6 to 1.78 and a film thickness of 55 nm to 110 nm, a transparent electrode pattern, and a second transparent film which has a refractive index of 1.6 to 1.78 and a film thickness of 55 nm to 110 nm are laminated in this order is included in a plane.
2. The transparent laminate according to claim 1,
wherein both of the transparent electrode pattern and a non-pattern region where the transparent electrode pattern is not formed are continuously covered with the first transparent film and the second transparent film directly or via another layer.
3. The transparent laminate according to claim 1,
wherein the first transparent film and the transparent electrode pattern are adjacent to each other.
4. The transparent laminate according to claim 1,
wherein the transparent electrode pattern and the second transparent film are adjacent to each other.
5. The transparent laminate according to claim 1,
wherein at least a part of the non-pattern region where the transparent electrode pattern is not formed includes a region where the transparent substrate, the first transparent film, and the second transparent film are laminated in this order in a plane.
6. The transparent laminate according to claim 5,
wherein the first transparent film and the second transparent film are adjacent to each other in the region where the transparent substrate, the first transparent film, and the second transparent film are laminated in this order.
7. The transparent laminate according to claim 1,
wherein a transparent protective film having a refractive index of 1.5 to 1.55 is further formed on a surface of the second transparent film opposite a surface on which the transparent electrode pattern is formed.
8. The transparent laminate according to claim 1,
wherein the first transparent film and the second transparent film are made of the same material.
9. The transparent laminate according to claim 1,
wherein the transparent substrate is a glass substrate having a refractive index of 1.5 to 1.55.
10. The transparent laminate according to claim 1,
wherein the transparent electrode pattern is an ITO film having a refractive index of 1.75 to 2.1.
11. The transparent laminate according to claim 1,
wherein at least one of the first transparent film and the second transparent film is a transparent resin film.
12. The transparent laminate according to claim 11,
wherein the transparent resin film has at least one of ZrO2 particles and TiO2 particles.
13. The transparent laminate according to claim 1,
wherein at least one of the first transparent film and the second transparent film is formed by transferring a transparent curable resin film formed on a temporary support onto the transparent substrate.
14. The transparent laminate according to claim 1,
wherein at least one of the first transparent film and the second transparent film is formed by sputtering.
15. The transparent laminate according to claim 1,
wherein at least one of the first transparent film and the second transparent film is a mixed film of SiO2 and Nb2O5 formed by sputtering.
16. The transparent laminate according to claim 1,
wherein an end portion of the transparent electrode pattern has a tapered shape having an angle of 30\xb0 or smaller.
17. The transparent laminate according to claim 1,
wherein a third transparent film having a refractive index of 1.5 to 1.52 is included between the transparent substrate and the first transparent film.
18. A capacitance type input device comprising:
the transparent laminate according to claim 1.
19. An image display device comprising:
the capacitance type input device according to claim 18 as a constituent element.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for encapsulating an optoelectronic component, comprising the steps of:
A) providing the optoelectronic component; and
B) depositing a diffusion barrier for protection against environmental influences by means of an atmospheric pressure plasma on at least one subarea of the surface of the optoelectronic component.
2. The method according to claim 1, wherein the diffusion barrier is deposited with a thickness of 50 nm to 1000 nm.
3. The method according to claim 1, wherein the diffusion barrier is deposited in at least two individual layers with a thickness of 50 to 100 nm each.
4. The method according to claim 1, wherein in method step B) a plasma beam is used for the deposition onto subareas of the optoelectronic component.
5. The method according to claim 1, wherein method step A) comprises the following method sub-steps:
A1) providing a substrate;
A2) applying a first electrode layer to the substrate;
A3) applying an organic functional layer to the first electrode layer; and,
A4) applying a second electrode layer to the organic functional layer; wherein a layer stack is formed which comprises the first electrode layer, the second electrode layer and the organic functional layer.
6. The method according to claim 5, which comprises as a further method sub-step A5) applying a first encapsulating layer to the second electrode layer.
7. The method according to claim 6, wherein the first encapsulating layer is applied by atmospheric pressure plasma.
8. The method according to claim 5, wherein the layer stack has main surfaces and side surfaces, wherein the diffusion barrier is applied to the side surfaces of the layer stack.
9. The method according to claim 5, wherein a thin-film encapsulating layer is applied to the second electrode layer in an additional method step after A4).
10. The method according to claim 5, wherein a conductive transparent layer is applied to the substrate in an additional method step between method steps A1) and A2).
11. The method according to claim 5, wherein a second encapsulating layer is applied to the thin-film encapsulating layer in an additional method step.
12. The method according to claim 5, wherein a cover plate is used for the first encapsulating layer.
13. The method according to claim 1, wherein the optoelectronic component is encapsulated such that no cavity is formed between the encapsulation and the component.
14. An optoelectronic component comprising:
a first substrate;
a first electrode layer arranged on the first substrate;
an organic functional layer arranged on the first electrode layer;
a second electrode layer arranged on the organic functional layer;
a first encapsulating layer arranged on the second electrode layer; and
a diffusion barrier which comprises SiO2 and was deposited onto at least one subarea of the surface of the component by means of atmospheric pressure plasma.