1. A device, comprising:
a print head;
a manifold;
at least one feed through tube located on a side of the manifold opposite the print head; and
a first gas source located between the manifold and the print head and hermetically sealed to the print head,
the print head further comprising:
a first layer further comprising a plurality of nozzles, each nozzle having an aperture, and each aperture having a smallest dimension of 0.5 to 500 microns; and
a second layer bonded to the first layer, the second layer further comprising a first via in fluid communication with the first gas source and at least one of the nozzles, wherein the second layer is made of an insulating material, and
wherein at least one of the first layer and the second layer is configured to be heated by a heat source associated with the print head,
wherein the heat source is incorporated into the at least first layer or the second layer of the print head, and
wherein the heat source is a resistive element embedded in the at least first layer or the second layer of the print head.
2. The device of claim 1, wherein the first layer further comprises a channel that provides fluid communication within the first layer between the first via of the second layer and apertures of the first layer.
3. The device of claim 1, further comprising a third layer disposed between the first and second layers and bonded to the first layer and the second layer, wherein the third layer further comprises a channel that provides fluid communication between the first via of the second layer and apertures of the first layer.
4. The device of claim 3, wherein the third layer further comprises a heat source.
5. The device of claim 1, wherein a plurality of the nozzles are in parallel fluid communication with the first gas source.
6. The device of claim 1, wherein the print head further comprises a microelectromechanical switch adapted to block or allow fluid communication between the first via and the at least one of the apertures depending upon the state of the switch.
7. The device of claim 1, wherein at least one aperture is formed in a protrusion from the print head.
8. The device of claim 1, wherein the thickness of the print head is between 50 and 500 microns.
9. The device of claim 1, wherein the second layer further comprises a channel that provides fluid communication within the second layer between the first via of the second layer and nozzles of the first layer.
10. The device of claim 1, wherein the first layer is configured to be heated.
11. The device of claim 10, wherein the first layer includes a heat source.
12. The device of claim 1, wherein the second layer is configured to be heated.
13. The device of claim 12, wherein the second layer includes a heat source.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A semiconductor device, comprising:
a semiconductor substrate having a central portion with a first thickness and a peripheral portion with a second thickness that is smaller than said first thickness;
an electrode pad formed on said semiconductor substrate;
a sealing resin for sealing said semiconductor substrate;
a protruded electrode formed on said sealing resin; and
a wire which electrically connects said electrode pad to said protruded electrode.
2. A semiconductor device as claimed in claim 1, wherein said first thickness is less than said second thickness by more than 10 m.
3. A semiconductor device, comprising:
a semiconductor substrate having a central portion and a peripheral portion that is formed with a step of prescribed height that is measured with respect to a surface of said central portion;
an electrode pad formed on said central portion of said semiconductor substrate;
a protruded electrode that is electrically connected to said electrode pad via a wire; and
a sealing resin for sealing said central portion, said peripheral portion, and said wire of said semiconductor substrate.
4. A semiconductor device as claimed in claim 3, wherein said peripheral portion of said semiconductor substrate has a width that is equal to a distance from an edge portion of said semiconductor device to said central portion, and wherein a width of said peripheral portion is varied between a first value and a second value.
5. A semiconductor device as claimed in claim 3, wherein said peripheral portion of said semiconductor substrate has a width that is equal to a distance from an edge portion of said semiconductor device to said central portion, and said width of said peripheral portion is over 3 m.
6. A semiconductor device as claimed in claim 3, wherein said prescribed height of said step is over 10 m.
7. A semiconductor device manufacturing method comprising the steps of:
forming an electrode pad on a semiconductor wafer;
forming a wire to be connected to said electrode pad;
forming on a prescribed region of said semiconductor wafer a groove having a first width that is varied between a first value as a lower limit and a second value as an upper limit;
sealing with a resin said semiconductor wafer and said wire;
forming on said resin a protruded electrode that is electrically connected to said wire; and
dividing said semiconductor wafer into a plurality of semiconductor devices by cutting said prescribed region using a blade having a thickness that is smaller than said first width.
8. A semiconductor device manufacturing method as claimed in claim 7, wherein a depth of said groove having said first width is over 10 m.
9. A semiconductor device manufacturing method as claimed in claim 7, wherein a difference between said first width and said second width is over 6 m.
10. A semiconductor device manufacturing method comprising the steps of:
forming an electrode pad on a semiconductor wafer;
forming a wire to be connected to said electrode pad;
forming on a prescribed region of said semiconductor wafer a groove having a first width that varies between a first value as a lower limit and a second value as an upper limit;
sealing with a resin said semiconductor wafer and said wire;
forming on said resin a protruded electrode that is electrically connected to said wire; and
dividing said semiconductor wafer into a plurality of semiconductor devices by cutting said prescribed region using a blade having a third thickness that is smaller than said second value.
11. A semiconductor device manufacturing method as claimed in claim 10, wherein a depth of said groove is over 10 m.
12. A semiconductor device manufacturing method as claimed in claim 10, wherein a difference between said second value and said third width is over 6 m.