1. A ferroelectric memory cell comprising:
a ferroelectric capacitor including a bottom electrode, a ferroelectric layer formed on the bottom electrode and a top electrode formed on the ferroelectric layer;
a high permittivity dielectric layer formed over the ferroelectric capacitor, wherein the high permittivity dielectric layer comprises an encapsulation layer and completely covers the top electrode; and
a local interconnect electrode formed on the encapsulation layer.
2. The ferroelectric memory cell according to claim 1, wherein a dielectric permittivity of the encapsulation layer is 5 to 10 times larger than a dielectric permittivity of the ferroelectric layer.
3. The ferroelectric memory cell according to claim 1, wherein the ferroelectric layer includes a first PZT.
4. The ferroelectric memory cell according to claim 3, wherein the encapsulation layer includes a second PZT, and a Pb (lead) of the second PZT is lower than that of the first PZT.
5. The ferroelectric memory cell according to claim 3, wherein the encapsulation layer includes a second PZT, and the second PZT has a different concentration of Pb (lead), Zr (zirconate) or Ti (titanate) than that of the first PZT.
6. The ferroelectric memory cell according to claim 1, wherein the top electrode, the encapsulation layer and the local interconnect electrode comprise a second capacitor.
7. The ferroelectric memory cell according to claim 6, wherein a capacitance of the second capacitor is 5 to 10 times larger than a capacitance of the ferroelectric capacitor.
8. The ferroelectric memory cell according to claim 6, wherein the second capacitor has high charge storage capability.
9. The ferroelectric memory cell according to claim 1, further comprising a transistor, wherein the transistor is connected to the local interconnect electrode.
10. An integrated circuit comprising:
a ferroelectric capacitor including a bottom electrode, a ferroelectric layer formed on the bottom electrode and a top electrode formed on the ferroelectric layer;
a high permittivity dielectric layer formed over the ferroelectric capacitor, wherein the high permittivity dielectric layer comprises an encapsulation layer and completely covers the top electrode; and
a local interconnect electrode formed on the encapsulation layer.
11. The integrated circuit according to claim 10, wherein a dielectric permittivity of the encapsulation layer is 5 to 10 times larger than a dielectric permittivity of the ferroelectric layer.
12. The integrated circuit according to claim 10, wherein the top electrode, the encapsulation layer and the local interconnect electrode comprise a second capacitor.
13. The integrated circuit according to claim 12, wherein a capacitance of the second capacitor is 5 to 10 times larger than a capacitance of the ferroelectric capacitor.
14. A method for forming an integrated circuit comprising:
forming a bottom electrode;
forming a ferroelectric layer on the bottom electrode;
forming a top electrode on the ferroelectric layer, wherein the bottom electrode, the ferroelectric layer, and the top electrode form a ferroelectric capacitor;
forming a high permittivity dielectric layer over the ferroelectric capacitor, wherein the high permittivity dielectric layer comprises an encapsulation layer and completely covers the top electrode; and
forming a local interconnect electrode on the encapsulation layer so that the top electrode, the encapsulation layer and the local interconnect electrode form a second capacitor.
15. The method for forming an integrated circuit according to claim 14, wherein a dielectric permittivity of the encapsulation layer is 5 to 10 times larger than a dielectric permittivity of the ferroelectric layer.
16. The method for forming an integrated circuit according to claim 14, wherein the ferroelectric layer includes a first PZT.
17. The method for forming an integrated circuit according to claim 16, wherein the encapsulation layer includes a second PZT, and a Pb (lead) concentration of the second PZT is lower than that of the first PZT.
18. The method for forming an integrated circuit according to claim 16, wherein the encapsulation layer includes a second PZT, and the second PZT has a different concentration of Pb (lead), Zr (zirconate) or Ti (titanate) than that of the first PZT.
19. The method for forming an integrated circuit according to claim 14, wherein the encapsulation layer is formed by plasma damaging a PZT layer.
20. The method for forming an integrated circuit according to claim 14, wherein the encapsulation layer is formed at a temperature as high as 700 C.
21. The method for forming an integrated circuit according to claim 14, wherein a capacitance of the second capacitor is 5 to 10 times larger than a capacitance of the ferroelectric capacitor.
22. The method for forming an integrated circuit according to claim 14, wherein the ferroelectric capacitor is driven by a capacitive coupling.
23. A ferroelectric memory cell comprising:
a conductive barrier;
a ferroelectric capacitor formed on the conductive barrier, wherein the ferroelectric capacitor includes a bottom electrode, a ferroelectric layer formed on the bottom electrode and a top electrode formed on the ferroelectric layer; and
a high permittivity dielectric layer formed between the conductive barrier and the ferroelectric capacitor, wherein the conductive barrier connects the ferroelectric capacitor to an underlying device through a connecting electrode formed directly below the ferroelectric capacitor.
24. The ferroelectric memory cell according to claim 23, wherein a dielectric permittivity of the high permittivity dielectric layer is 5 to 10 times larger than a dielectric permittivity of the ferroelectric layer.
25. The ferroelectric memory cell according to claim 23, wherein the ferroelectric layer includes a first PZT.
26. The ferroelectric memory cell according to claim 25, wherein the high permittivity dielectric layer includes a second PZT, and a Pb (lead) concentration of the second PZT is lower than that of the first PZT.
27. The ferroelectric memory cell according to claim 25, wherein the high permittivity dielectric layer includes a second PZT, and the second PZT has a different concentration of Pb (lead), Zr (zirconate) or Ti (titanate) than that of the first PZT.
28. The ferroelectric memory cell according to claim 23, wherein the bottom electrode, the high permittivity dielectric layer and the conductive layer comprise a second capacitor.
29. The ferroelectric memory cell according to claim 28, wherein a capacitance of the second capacitor is 5 to 10 times larger than a capacitance of the ferroelectric capacitor.
30. The ferroelectric memory cell according to claim 23, wherein the ferroelectric capacitor is driven by a capacitive coupling.
31. The ferroelectric memory cell according to claim 23, further comprising a metalization layer formed on the ferroelectric capacitor.
32. An integrated circuit comprising:
a conductive barrier;
a ferroelectric capacitor formed on the conductive barrier, wherein the ferroelectric capacitor includes a bottom electrode, a ferroelectric layer formed on the bottom electrode and a top electrode formed on the ferroelectric layer; and
a high permittivity dielectric layer formed between the conductive barrier and the ferroelectric capacitor, wherein the conductive barrier connects the ferroelectric capacitor to an underlying device through a connecting electrode formed directly below the ferroelectric capacitor.
33. The integrated circuit according to claim 32, wherein a dielectric permittivity of the high permittivity dielectric layer is 5 to 10 times larger than a dielectric permittivity of the ferroelectric layer.
34. The integrated circuit according to claim 32, wherein the bottom electrode, the high permittivity dielectric layer and the conductive layer comprise a second capacitor.
35. The integrated circuit according to claim 34, wherein a capacitance of the second capacitor is 5 to 10 times larger than a capacitance of the ferroelectric capacitor.
36. A method for forming an integrated circuit comprising:
forming a conductor;
forming a conductive barrier on the conductor;
forming a high permittivity dielectric layer on the conductive barrier; and
forming a ferroelectric capacitor on the high permittivity dielectric layer, wherein the ferroelectric capacitor includes a bottom electrode, a ferroelectric layer formed on the bottom electrode and a top electrode formed on the ferroelectric layer, wherein the conductive barrier connects the ferroelectric capacitor to an underlying device through the conductor.
37. The method for forming an integrated circuit according to claim 36, wherein a dielectric permittivity of the high permittivity dielectric layer is 5 to 10 times larger than a dielectric permittivity of the ferroelectric layer.
38. The method for forming an integrated circuit according to claim 36, wherein the ferroelectric layer includes a first PZT.
39. The method for forming an integrated circuit according to claim 38, wherein the high permittivity dielectric layer includes a second PZT, and a Pb (lead) concentration of the second PZT is lower than that of the first PZT.
40. The method for forming an integrated circuit according to claim 38, wherein the high permittivity dielectric layer includes a second PZT, and the second PZT has a different concentration of Pb (lead), Zr (zirconate) or Ti (titanate) than that of the first PZT.
41. The method for forming an integrated circuit according to claim 36, wherein the bottom electrode, the high permittivity dielectric layer and the conductive layer comprise a second capacitor.
42. The method for forming an integrated circuit according to claim 41, wherein a capacitance of the second capacitor is 5 to 10 times larger than a capacitance of the ferroelectric capacitor.
43. The method for forming an integrated circuit according to claim 36, wherein the ferroelectric capacitor is driven by a capacitive coupling.
44. The method for forming an integrated circuit according to claim 36, further comprising forming a metalization layer on the ferroelectric capacitor.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A compound of formula (I)
or a pharmaceutically acceptable salt or ester thereof, wherein
R1 is cycloalkyl or aryl, wherein said cycloalkyl or aryl is optionally substituted with 1 to 4 substituents independently selected from the group consisting of hydroxy, halogen, lower-alkyl, lower-alkoxy, fluoro-lower-alkyl and fluoro-lower-alkoxy;
R2 is hydrogen or lower-alkyl;
R3 is cycloalkyl, wherein said cycloalkyl is optionally substituted with 1 to 4 substituents independently selected from the group consisting of hydroxy, halogen, lower-alkyl, lower-alkoxy, fluoro-lower-alkyl, fluoro-lower-alkoxy and lower-alkoxy-carbonyl;
R4 is phenyl optionally substituted with 1 to 4 substituents independently selected from the group consisting of halogen, lower-alkyl, lower-alkoxy, hydroxy, dioxo-lower-alkylene, fluoro-lower-alkyl and fluoro-lower-alkoxy;
R5 and R6 independently from each other are hydrogen, hydroxy, hydroxy-lower-alkyl, lower-alkoxy, lower-alkyl, fluoro-lower-alkyl or fluoro-lower-alkoxy;
R7, R8, R9 and R10 independently from each other are hydrogen, halogen, hydroxy, lower-alkyl, lower-alkoxy, fluoro-lower-alkyl or fluoro-lower-alkoxy.
2. A compound of claim 1, wherein R3 is cycloalkyl, optionally substituted with 1 to 4 substituents independently selected from the group consisting of hydroxy, halogen, lower-alkyl, lower-alkoxy, fluoro-lower-alkyl and fluoro-lower-alkoxy.
3. A compound of claim 2 wherein R\u2032 is cycloalkyl.
4. A compound of claim 1, wherein R1 is cyclopentyl, cyclohexyl or 4-hydroxy-phenyl.
5. A compound of claim 1, wherein R2 is hydrogen.
6. A compound of claim 1, wherein R3 is cyclohexyl.
7. A compound of claim 1, wherein R4 is phenyl optionally substituted with 1 to 3 substituents independently selected from the group consisting of halogen, lower-alkyl, lower-alkoxy, hydroxy and dioxo-lower-alkylene.
8. A compound of claim 1, wherein R4 is phenyl which can optionally be substituted with 1 to 2 substituents independently selected from the group consisting of halogen and lower-alkoxy.
9. A compound of claim 1, wherein R4 is 3-chloro-phenyl, 3-methoxy-phenyl, 2,4-difluoro-phenyl, phenyl, benzo1,3dioxol-5-yl or 3,5-difluoro-phenyl.
10. A compound of claim 1, wherein R5 and R6 independently from each other are hydrogen, hydroxy, hydroxy-lower-alkyl, lower-alkoxy or lower-alkyl.
11. A compound of claim 1, wherein R5 is hydrogen or lower-alkoxy.
12. A compound of claim 1, wherein R5 is hydrogen or methoxy.
13. A compound of claim 1, wherein R6 is hydrogen or lower-alkyl.
14. A compound of claim 1, wherein R6 is hydrogen.
15. A compound of claim 1, wherein R7, R8, R9 and R10 independently from each other are hydrogen or halogen.
16. A compound of claim 15, wherein R7 is hydrogen.
17. A compound of claim 15, wherein R8 is fluoro.
18. A compound of claim 15, wherein R9 is hydrogen or fluoro.
19. A compound of claim 15, wherein R10 is hydrogen.
20. The compound of claim 1, selected from the group consisting of
2-2-(3-Chloro-benzyl)-5,6-difluoro-benzoimidazol-1-yl-2,N-dicyclohexyl-acetamide,
2,N-Dicyclohexyl-2-5,6-difluoro-2-(4-isopropyl-benzyl)-benzoimidazol-1-yl-acetamide,
2,N-Dicyclohexyl-2-2-(4-ethoxy-benzyl)-5,6-difluoro-benzoimidazol-1-yl-acetamide,
2,N-Dicyclohexyl-2-5,6-difluoro-2-(3-methoxy-benzyl)-benzoimidazol-1-yl-acetamide,
2,N-Dicyclohexyl-2-2-(3,4-dimethoxy-benzyl)-5,6-difluoro-benzoimidazol-1-yl-acetamide,
2,N-Dicyclohexyl-2-5,6-difluoro-2-(2-hydroxy-benzyl)-benzoimidazol-1-yl-acetamide,
2,N-Dicyclohexyl-2-2-(2,4-difluoro-benzyl)-5,6-difluoro-benzoimidazol-1-yl-acetamide,
2-{2-(4-Chloro-phenyl)-hydroxy-methyl-5,6-difluoro-benzoimidazol-1-yl}-2,N-dicyclohexyl-acetamide,
2-{2-(R)-(4-Chloro-phenyl)-hydroxy-methyl-5,6-difluoro-benzoimidazol-1-yl}-2,N-dicyclohexyl-acetamide,
2,N-Dicyclohexyl-2-5,6-difluoro-2-((S)-hydroxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
(+)-2,N-Dicyclohexyl-2-5,6-difluoro-2-((R)-hydroxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
2,N-Dicyclohexyl-2-5,6-difluoro-2-((S)-hydroxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
2-{2-(R)-(3-Chloro-phenyl)-hydroxy-methyl-5,6-difluoro-benzoimidazol-1-yl}-2,N-dicyclohexyl-acetamide,
2-{2-(S)-(3-Chloro-phenyl)-hydroxy-methyl-5,6-difluoro-benzoimidazol-1-yl}-2,N-dicyclohexyl-acetamide,
2,N-Dicyclohexyl-2-{2-(R)-(3,4-dichloro-phenyl)-hydroxy-methyl-5,6-difluoro-benzoimidazol-1-yl}-acetamide,
2,N-Dicyclohexyl-2-{2-(2,3-dichloro-phenyl)-hydroxy-methyl-5,6-difluoro-benzoimidazol-1-yl}-acetamide, and
2,N-Dicyclohexyl-2-{2-1-(3,4-dichloro-phenyl)-1-hydroxy-ethyl-5,6-difluoro-benzoimidazol-1-yl}-acetamide,
or a pharmaceutically acceptable salts and esters thereof.
21. A compound of claim 1, selected from the group consisting of
2,N-Dicyclohexyl-2-5,6-difluoro-2-(methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
2,N-Dicyclohexyl-2-5,6-difluoro-2-((R)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
(\u2212)-2,N-Dicyclohexyl-2-5,6-difluoro-2-((R)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
(+)-2-Cyclohexyl-N-cyclopentyl-2-5,6-difluoro-2-((R)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
(\u2212)-(S)-2,N-Dicyclohexyl-2-5,6-difluoro-2-((S)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
(\u2212)-(R)-2,N-Dicyclohexyl-2-5,6-difluoro-2-((S)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
(\u2212)-(S)-2-Cyclohexyl-N-cyclopentyl-2-5,6-difluoro-2-((S)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
(+)-(R)-2-Cyclohexyl-N-cyclopentyl-2-5,6-difluoro-2-((S)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
2,N-Dicyclohexyl-2-{5,6-difluoro-2-(2-fluoro-5-methoxy-phenyl)-methoxy-methyl-benzoimidazol-1-yl}-acetamide,
2,N-Dicyclohexyl-2-{5,6-difluoro-2-(2-fluoro-4-methoxy-phenyl)-methoxy-methyl-benzoimidazol-1-yl}-acetamide,
2,N-Dicyclohexyl-2-{2-(3,5-difluoro-phenyl)-methoxy-methyl-5,6-difluoro-benzoimidazol-1-yl}-acetamide,
2,N-Dicyclohexyl-2-{2-(4-ethoxy-2,6-difluoro-phenyl)-methoxy-methyl-5,6-difluoro-benzoimidazol-1-yl}-acetamide,
2,N-Dicyclohexyl-2-{2-(2,6-difluoro-phenyl)-methoxy-methyl-5,6-difluoro-benzoimidazol-1-yl}-acetamide,
2,N-Dicyclohexyl-2-{2-(2,3-difluoro-phenyl)-methoxy-methyl-5,6-difluoro-benzoimidazol-1-yl}-acetamide,
2,N-Dicyclohexyl-2-5,6-difluoro-2-(2-hydroxy-1-phenyl-ethyl)-benzoimidazol-1-yl-acetamide,
2-2-(3-Chloro-benzyl)-5-fluoro-benzoimidazol-1-yl-2,N-dicyclohexyl-acetamide, and
2,N-Dicyclohexyl-2-5-fluoro-2-(4-isopropyl-benzyl)-benzoimidazol-1-yl-acetamide,
or a pharmaceutically acceptable salts and ester thereof.
22. A compound of claim 1, selected from the group consisting of
2,N-Dicyclohexyl-2-2-(4-ethoxy-benzyl)-5-fluoro-benzoimidazol-1-yl-acetamide,
2,N-Dicyclohexyl-2-5-fluoro-2-(3-methoxy-benzyl)-benzoimidazol-1-yl-acetamide,
2,N-Dicyclohexyl-2-2-(3,4-dimethoxy-benzyl)-5-fluoro-benzoimidazol-1-yl-acetamide,
2,N-Dicyclohexyl-2-2-(2,4-difluoro-benzyl)-5-fluoro-benzoimidazol-1-yl-acetamide,
2-{2-(4-Chloro-phenyl)-hydroxy-methyl-5-fluoro-benzoimidazol-1-yl}-2,N-dicyclohexyl-acetamide,
2,N-Dicyclohexyl-2-5-fluoro-2-(methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
2-(2-Benzyl-6-chloro-5-fluoro-benzoimidazol-1-yl)-2,N-dicyclohexyl-acetamide,
2-6-Chloro-5-fluoro-2-(hydroxy-phenyl-methyl)-benzoimidazol-1-yl-2,N-dicyclohexyl-acetamide,
2-(2-Benzyl-benzoimidazol-1-yl)-2,N-dicyclohexyl-acetamide,
2-Cyclohexyl-2-5-fluoro-2-((R)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-N-(4-hydroxy-cyclohexyl)-acetamide,
2-Cyclohexyl-2-5-fluoro-2-((R)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-N-(4-hydroxy-cyclohexyl)-acetamide,
2-Cyclohexyl-N-cyclopentyl-2-5-fluoro-2-((R)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide, and
2-Cyclohexyl-2-5,6-difluoro-2-((R)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-N-(4-hydroxy-cyclohexyl)-acetamide,
or a pharmaceutically acceptable salts and esters thereof.
23. A compound of claim 1, selected from the group consisting of
2-{Cyclohexylcarbamoyl-5,6-difluoro-2-((S)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-methyl}-cyclopropanecarboxylic acid ethyl ester, and
2-{Cyclohexylcarbamoyl-5,6-difluoro-2-((R)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-methyl}-cyclopropanecarboxylic acid ethyl ester,
or a pharmaceutically acceptable salts and esters thereof.
24. A compound of claim 1, selected from the group consisting of
2,N-Dicyclohexyl-2-5,6-difluoro-2-(3-methoxy-benzyl)-benzoimidazol-1-yl-acetamide,
2,N-Dicyclohexyl-2-2-(2,4-difluoro-benzyl)-5,6-difluoro-benzoimidazol-1-yl-acetamide,
2,N-Dicyclohexyl-2-5,6-difluoro-2-(methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
(\u2212)-2,N-Dicyclohexyl-2-5,6-difluoro-2-((R)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
(\u2212)-(S)-2-Cyclohexyl-N-cyclopentyl-2-5,6-difluoro-2-((S)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide,
2,N-Dicyclohexyl-2-{2-(3,5-difluoro-phenyl)-methoxy-methyl-5,6-difluoro-benzoimidazol-1-yl}-acetamide,
2-2-(3-Chloro-benzyl)-5-fluoro-benzoimidazol-1-yl-2,N-dicyclohexyl-acetamide,
2,N-Dicyclohexyl-2-5-fluoro-2-(methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide, and
2-Cyclohexyl-2-5-fluoro-2-((R)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-N-(4-hydroxy-cyclohexyl)-acetamide,
or a pharmaceutically acceptable salts and ester thereof.
25. A compound of claim 1, selected from the group consisting of
2-Cyclohexyl-N-cyclopentyl-2-5-fluoro-2-((R)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-acetamide, and
2-Cyclohexyl-2-5,6-difluoro-2-((R)-methoxy-phenyl-methyl)-benzoimidazol-1-yl-N-(4-hydroxy-cyclohexyl)-acetamide,
or a pharmaceutically acceptable salts and esters thereof.
26. A pharmaceutical composition comprising a compound of claim 1 and a pharmaceutically acceptable carrier andor adjuvant.