1. A method of adjusting a movement velocity of a transfer member having a plurality of transfer arms on which substrates are loaded, the respective transfer arms facing a ground, the method comprising:
accelerating the transfer member from a start point where the transfer member starts to move vertically to a first point where the movement velocity reaches a preset reference velocity;
gradually decelerating the transfer member moving at the reference velocity from a second point to a target point; and
dividing a division from the first point to the second point into N movement divisions (where N is a natural number that is at least two) to move the transfer member in any one of a deceleration motion, an acceleration motion, and a uniform motion according to the respective movement divisions,
wherein the motion of the transfer member in the current movement division is different from that in the movement division just before the current movement division.
2. The method of claim 1, wherein the transfer member is in the acceleration motion in at least one of the movement divisions, and in the deceleration motion in at least one of the movement divisions.
3. The method of claim 2, wherein the transfer member is in the uniform motion in the middle one of the three movement divisions sequentially disposed, and the transfer member is in the acceleration or deceleration motion in the movement division just before the middle movement division and in the movement division just after the middle movement division.
4. The method of claim 3, wherein the transfer member is in the uniform motion at the reference velocity in the first movement division and the last movement division.
5. A substrate-transferring method using a transfer member having a plurality of transfer arms to which substrates are loaded, the respective transfer arms facing a ground, the method comprising:
moving the transfer member to a storage member to load or pick up the substrate in the storage member;
vertically moving the transfer member to be disposed at a target point in the storage member; and
loading the substrate, placed on an upper surface of the transfer member, on the target point, or picking up the substrate loaded on the target point, wherein the moving of the transfer member includes:
accelerating the transfer member from a start point where the transfer member starts to move vertically to a first point where a movement velocity reaches a preset reference velocity;
dividing a division from the first point to a second point into N movement divisions (where N is a natural number that is at least two) to move the transfer member in any one of a deceleration motion, an acceleration motion, and a uniform motion according to the respective movement divisions; and
decelerating the transfer member moving at the reference velocity from the second point to the target point, and the motion of the transfer member in the current movement division is different from that in the movement division just before the current movement division.
6. The substrate-transferring method of claim 5, wherein the transfer member is in the acceleration motion in at least one of the movement divisions, and in the deceleration motion in at least one of the movement divisions.
7. The substrate-transferring method of claim 6, wherein the transfer member is in the uniform motion in the middle one of the three movement divisions sequentially disposed, and the transfer member is in the acceleration or deceleration motion in the movement division just before the middle movement division and in the movement division just after the middle movement division.
8. The substrate-transferring method of claim 7, wherein the transfer member is in the uniform motion at the reference velocity in the first movement division and the last movement division.
9. The substrate-transferring method of claim 8, wherein when a division between the start point and the target point is divided into four divisions, the first point is a boundary between the first one and the second one of the four divisions, and the second point is a boundary between the third one and the fourth one of the four divisions.
10. A substrate-processing apparatus comprising:
a storage member arranging a plurality of substrates in a vertical direction to store the substrates;
a transfer member including a plurality of transfer arms facing each other in the vertical direction, an arm-driving part moving the respective transfer arm horizontally, and a vertical movement part disposed under the arm-driving part to change a vertical position of the respective transfer arm, the substrates being loaded on the respective transfer arm, the transfer member taking out and loading at least one substrate from and to the storage member; and
a control unit adjusting a movement velocity of the vertical movement part until the transfer member moves vertically to reach a target point in the storage member, wherein the control unit accelerates the vertical movement part to a preset reference velocity until the transfer member arrives at a first point from a start point, and the control unit gradually decelerates the vertical movement part moving at the reference velocity until the transfer member arrives at the target point from a second point, and while the transfer member moves within a division between the first point and the second point, the division being divided into N movement divisions (where N is a natural number that is at least two), the control unit vertically moves the vertical movement part in any one of a deceleration motion, an acceleration motion, and a uniform motion according to the respective movement divisions, and the control unit controls the vertical movement part such that the motion of the vertical movement part in the current movement division is different from that in the movement division just before the current movement division.
11. The substrate-processing apparatus of claim 10, wherein when adjusting the movement velocity of the vertical movement part, the control unit controls the vertical movement part to be in the acceleration motion in at least one of the movement divisions, and in the deceleration motion in at least one of the movement divisions.
12. A substrate-processing apparatus comprising:
a storage container spacing substrates to be processed or processed substrates in a vertical direction to store the substrates;
a buffer unit spacing the substrates to be processed and the processed substrates in the vertical direction to store the substrates;
an index robot including a plurality of index arms facing each other in the vertical direction, an arm-driving part moving the respective index arm horizontally, and a first vertical movement part disposed under the arm-driving part to change a vertical position of the respective index arm, the substrates being loaded on the respective index arm, the index robot transferring the substrate between the storage container and the buffer unit, the index robot taking out and loading at least one substrate from and to the storage container or the buffer unit; and
a first control unit adjusting a movement velocity of the first vertical movement part until the index robot moves vertically to reach a target point in the storage container or the buffer unit;
wherein the first control unit accelerates the first vertical movement part to a preset first reference velocity until the index robot arrives at a first point from a start point, and the first control unit gradually decelerates the first vertical movement part moving at the first reference velocity until the index robot arrives at the target point from a second point, and while the index robot moves within a division between the first point and the second point, the division being divided into N arm movement divisions (where N is a natural number that is at least two), the first control unit vertically moves the first vertical movement part in any one of a deceleration motion, an acceleration motion, and a uniform motion according to the respective arm movement divisions, and the first control unit controls the first vertical movement part such that the motion of the first vertical movement part in the current arm movement division is different from that in the arm movement division just before the current arm movement division.
13. The substrate-processing apparatus of claim 12, further comprising:
a process chamber where the substrate is processed;
a storage member arranging the substrates in the vertical direction to store the substrates;
a transfer member including a plurality of pick-up hands facing each other in the vertical direction, a hand-driving part moving the respective pick-up hand horizontally, and a second vertical movement part disposed under the hand-driving part to change a vertical position of the pick-up hand, the substrates being loaded on the respective pick-up hand, the transfer member taking out and loading at least one substrate from and to the storage member; and
a second control unit adjusting a movement velocity of the second vertical movement part until the transfer member moves vertically to reach a target point in the buffer unit, wherein the second control unit accelerates the second vertical movement part to a preset second reference velocity until the transfer member arrives at a third point from a start point, and the second control unit gradually decelerates the second vertical movement part moving at the second reference velocity until the transfer member arrives at the target point from a fourth point, and while the transfer member moves within a division between the third point and the fourth point, the division being divided into M hand movement divisions (where M is a natural number that is at least two), the second control unit vertically moves the second vertical movement part in any one of a deceleration motion, an acceleration motion, and a uniform motion according to the respective hand movement divisions, and the second control unit controls the second vertical movement part such that the motion of the second vertical movement part in the current hand movement division is different from that in the movement division just before the current hand movement division.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first conductive film and a second conductive film over a substrate;
forming a first insulating film over the first conductive film and the second conductive film;
removing a part of the first insulating film, allowing the first insulating film to be left over the second conductive film and the first conductive film to be exposed;
forming a second insulating film over the first conductive film and the first insulating film;
forming a charge accumulation layer over the first conductive film with the second insulating film interposed therebetween, allowing the charge accumulation layer not to overlap the second conductive film;
forming a tunnel insulating film over the charge accumulation layer, allowing the tunnel insulating film not to overlap the second conductive film;
forming over the tunnel insulating film a first semiconductor film that overlaps the first conductive film;
forming over the second insulating film a second semiconductor film that overlaps the second conductive film, and a third semiconductor film that does not overlap either the first conductive film or the second conductive film;
forming a third insulating film over the first semiconductor film, the second semiconductor film, and the third semiconductor film; and
forming a third conductive film over the third semiconductor film with the third insulating film interposed therebetween.
2. The method for manufacturing the semiconductor device according to claim 1, the method further comprising the steps of:
forming over the third insulating film a fourth conductive film that overlaps the first semiconductor film; and
forming over the third insulating film a fifth conductive film that overlaps the second semiconductor film.
3. The method for manufacturing the semiconductor device according to claim 1,
wherein each of the second insulating film, the third insulating film, and the tunnel insulating film has a thickness smaller than that of the first insulating film.
4. The method for manufacturing the semiconductor device according to claim 1, the method further comprising the steps of:
forming a resist over the first semiconductor film and the second semiconductor film after forming the third conductive film; and
introducing an impurity element into the first semiconductor film, the second semiconductor film, and the third semiconductor film.
5. The method for manufacturing the semiconductor device according to claim 1,
wherein the charge accumulation layer is formed of an insulating material containing nitrogen.
6. The method for manufacturing the semiconductor device according to claim 1,
wherein the charge accumulation layer is formed of an insulating material containing nitrogen, and
wherein the charge accumulation layer contains a conductive particle or a semiconductor particle.
7. The method for manufacturing the semiconductor device according to claim 1,
wherein the charge accumulation layer is formed of a conductive material.
8. The method for manufacturing the semiconductor device according to claim 1,
wherein the tunnel insulating film is formed by oxidizing the charge accumulation layer by plasma treatment.