1. A magnetic memory comprising:
a magnetic storage element including a first magnetic layer in which a direction of magnetization can be reversed, a second magnetic layer in which a direction of magnetization is fixed, and a non-magnetic layer which is interposed between the first magnetic layer and the second magnetic layer;
a read-write line for supplying a write current and a read current in a stacking direction of the magnetic storage element; and
a bias line which is disposed in the vicinity of the magnetic storage element and applies a bias magnetic field to the first magnetic layer during reading.
2. The magnetic memory according to claim 1, wherein a direction of the bias magnetic field is set along an easy magnetization axis of the first magnetic layer.
3. The magnetic memory according to claim 1, wherein a direction of the bias magnetic field is set to a direction that is opposite to the direction of magnetization reversal of the first magnetic layer due to the read current.
4. The magnetic memory according to claims 1, wherein the magnetic storage element further includes: a third magnetic layer which is disposed on a side opposite to the second magnetic layer side of the first magnetic layer; and a non-magnetic layer disposed between the first magnetic layer and the third magnetic layer.
5. The magnetic memory according to claim 1, wherein the magnetic storage element further includes: a third magnetic layer which is disposed on a side opposite to the second magnetic layer side of the first magnetic layer; and a non-magnetic layer disposed between the first magnetic layer and the third magnetic layer, and wherein
a direction of magnetization of the third magnetic layer is fixed and the direction of the bias magnetic field is set to a direction that is opposite to the direction of magnetization of the third magnetic layer.
6. The magnetic memory according to claims 1, further comprising a yoke for surrounding the bias line in at least the vicinity of the magnetic storage element.
7. The magnetic memory according to claim 1, wherein a direction of the bias magnetic field is set along an easy magnetization axis of the first magnetic layer and the magnetic storage element further includes:
a third magnetic layer which is disposed on a side opposite to the second magnetic layer side of the first magnetic layer; and a non-magnetic layer disposed between the first magnetic layer and the third magnetic layer.
8. The magnetic memory according to claim 1, wherein a direction of the bias magnetic field is set to a direction that is opposite to the direction of magnetization reversal of the first magnetic layer due to the read current and wherein the magnetic storage element further includes:
a third magnetic layer which is disposed on a side opposite to the second magnetic layer side of the first magnetic layer; and a non-magnetic layer disposed between the first magnetic layer and the third magnetic layer.
9. The magnetic memory according to claim 1, further comprising a yoke for surrounding the bias line in at least the vicinity of the magnetic storage element and wherein a direction of the bias magnetic field is set along an easy magnetization axis of the first magnetic layer.
10. The magnetic memory according to claims 1, further comprising a yoke for surrounding the bias line in at least the vicinity of the magnetic storage element and wherein the magnetic storage element further includes:
a third magnetic layer which is disposed on a side opposite to the second magnetic layer side of the first magnetic layer; and a non-magnetic layer disposed between the first magnetic layer and the third magnetic layer.
11. The magnetic memory according to claim 1, wherein a direction of the bias magnetic field is set to a direction that is opposite to the spin-polarized direction of electrons in the first magnetic layer due to the read current.
12. A method for reading-writing information from-to a magnetic storage element, the magnetic storage element including a first magnetic layer in which a direction of magnetization can be reversed, a second magnetic layer in which a direction of magnetization is fixed, and a non-magnetic layer which is interposed between the first magnetic layer and the second magnetic layer, the method comprising:
during a writing operation, applying a write current in a stacking direction of the magnetic storage element to generate spin-polarized electrons, whereby the direction of magnetization of the first magnetic layer is reversed by means of the spin-polarized electrons; and
during a reading operation, applying a bias magnetic field to the first magnetic layer and further applying a read current in the stacking direction of the magnetic storage element to detect a resistance value of the magnetic storage element.
13. The method for reading-writing information from-to a magnetic storage element according to claim 12, wherein a direction of the bias magnetic field is set to a direction that is opposite to the direction of magnetization reversal of the first magnetic layer due to the read current.
14. The method for reading-writing information from-to a magnetic storage element according to claim 12, wherein the bias magnetic field is not applied during the writing operation.
15. The method for reading-writing information from-to a magnetic storage element according to claims 12, wherein a magnetic force of the bias magnetic field is set to be equal to or less than 80% of a magnetic force required for reversing the magnetization of the first magnetic layer.
16. The method for reading-writing information from-to a magnetic storage element according to claim 12, wherein a direction of the bias magnetic field is set to a direction that is opposite to the direction of magnetization reversal of the first magnetic layer due to the read current; and the bias magnetic field is not applied during the writing operation.
17. The method for reading-writing information from-to a magnetic storage element according to claim 12, wherein a direction of the bias magnetic field is set to a direction that is opposite to the direction of magnetization reversal of the first magnetic layer due to the read current; and a magnetic force of the bias magnetic field is set to be equal to or less than 80% of a magnetic force required for reversing the magnetization of the first magnetic layer.
18. The method for reading-writing information from-to a magnetic storage element according to claim 12, wherein the bias magnetic field is not applied during the writing operation; and a magnetic force of the bias magnetic field is set to be equal to or less than 80% of a magnetic force required for reversing the magnetization of the first magnetic layer.
19. The method for reading-writing information from-to a magnetic storage element according to claim 12, wherein a direction of the bias magnetic field is set to a direction that is opposite to the direction of magnetization reversal of the first magnetic layer due to the read current; the bias magnetic field is not applied during the writing operation; and a magnetic force of the bias magnetic field is set to be equal to or less than 80% of a magnetic force required for reversing the magnetization of the first magnetic layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A connecting structure for connecting a fuel filter and a fuel pump with an inlet, comprising:
a joint bracket to be retained in the fuel tank and including a pump side connecting portion to be connected to the fuel pump, and a filter side connecting portion to be connected to the fuel filter and having a bottom portion with a first positioning hole,
a filter section formed with the fuel filter and including a bracket connecting portion abutting against the bottom portion and having a second positioning hole, and a communicating portion communicating with the fuel filter and adapted to be connected to the inlet of the fuel pump, and
a projection formed at the fuel pump so that when the fuel filter is attached to the fuel filter through the joint bracket, the bracket connecting portion is attached to the bottom portion and the projection passes the first and second positioning holes and the inlet of the fuel pump is attached to the communicating portion.
2. A connecting structure according to claim 1, wherein said joint bracket further includes a third positioning hole, and said bracket connecting portion further includes a protrusion engaging the third positioning hole.
3. A connecting structure according to claim 2, wherein said filter side connecting portion includes a temporarily-holding member for temporarily holing the filter section in a state such that the first and second positioning holes are aligned together.
4. A connecting structure according to claim 3, wherein said temporarily-holding member includes a side opening formed in the joint bracket, said side opening having a size slightly smaller than a lateral size of the communicating portion of the filter section so that the communicating portion is elastically held inside side opening when the communicating portion is attached to the bracket connecting portion through the side opening.
5. A connecting structure according to claim 4, wherein said filter side connecting portion includes a through hole for receiving the communicating portion therein, and said third positioning hole is formed laterally to receive the protrusion laterally.
6. A connecting structure according to claim 5, wherein said filter section further includes flanges vertically spaced apart from each other to receive the bottom portion therebetween.